Patents by Inventor Akira Takashima

Akira Takashima has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20220093634
    Abstract: According to one embodiment, a semiconductor memory device includes a stacked structure including conductive layers arranged in a first direction, and a columnar structure extending in the first direction in the first stacked structure. The columnar structure includes a semiconductor layer extending in the first direction, a charge storage layer between the semiconductor layer and the stacked structure, a first insulating layer between the semiconductor layer and the charge storage layer, and a second insulating layer between the stacked structure and the charge storage layer. The charge storage layer is aluminum nitride with a wurtzite crystal structure in which the c-axis is oriented in a direction towards the first insulating layer from the second insulating layer.
    Type: Application
    Filed: March 1, 2021
    Publication date: March 24, 2022
    Inventors: Akira TAKASHIMA, Tsunehiro INO, Yasushi NAKASAKI, Yoshihiko MORIYAMA
  • Patent number: 11282850
    Abstract: A semiconductor memory device includes: a first and a second electrodes aligned in a first direction; a first semiconductor layer provided between the first and the second electrodes; a second semiconductor layer provided between the first semiconductor layer and the second electrode; a first charge accumulating layer provided between the first electrode and the first semiconductor layer; and a second charge accumulating layer provided between the second electrode and the second semiconductor layer. At least one of the first and the second charge accumulating layers include: a first and a second regions including nitrogen, aluminum, and oxygen and having different positions in a second direction; and a third region provided between the first and the second regions in the second direction. Oxygen is not included in the third region or a concentration of oxygen in the third region is lower than that in the first and the second regions.
    Type: Grant
    Filed: September 9, 2019
    Date of Patent: March 22, 2022
    Assignee: KIOXIA CORPORATION
    Inventors: Akira Takashima, Tsunehiro Ino, Ayaka Suko
  • Publication number: 20210335816
    Abstract: According to one embodiment, a nonvolatile semiconductor memory device includes a semiconductor layer, a first electrode, first to third layers, and nitride portions of nitride molecules. The first layer is provided between the semiconductor layer and the first electrode. The second layer is provided between the first layer and the first electrode. The second energy of a conduction band edge of the second layer is lower than a first energy of a conduction band edge of the first layer. The second layer includes a first region and a second region. The first region is provided between the first layer and the second region. The third layer is provided between the second layer and the first electrode. The third energy of a conduction band edge of the third layer is higher than the second energy.
    Type: Application
    Filed: July 2, 2021
    Publication date: October 28, 2021
    Applicant: Toshiba Memory Corporation
    Inventors: Akira TAKASHIMA, Kenichiro TORATAI, Masayuki TANAKA
  • Publication number: 20210296326
    Abstract: A semiconductor memory device of an embodiment includes: a semiconductor layer; a gate electrode layer; a first insulating layer provided between the semiconductor layer and the gate electrode layer; a second insulating layer provided between the first insulating layer and the gate electrode layer; and an intermediate layer provided between the first insulating layer and the second insulating layer, the intermediate layer containing a first crystal of a space group Pbca (space group number 61), a space group P42/nmc (space group number 137), or a space group R-3m (space group number 166), and the intermediate layer containing hafnium (Hf), oxygen (O), and nitrogen (N).
    Type: Application
    Filed: August 24, 2020
    Publication date: September 23, 2021
    Applicant: Kioxia Corporation
    Inventors: Tsunehiro INO, Akira TAKASHIMA, Reika TANAKA
  • Publication number: 20210257500
    Abstract: In one embodiment, a semiconductor device includes a stacked film including electrode layers and insulating layers that are alternately stacked in a first direction. The device further includes a first insulator, a charge storage layer, a second insulator and a semiconductor layer that are provided in the stacked film. The device further includes a third insulator provided between an electrode layer and an insulating layer and between the electrode layer and the first insulator, and including aluminum oxide having an ? crystal phase.
    Type: Application
    Filed: September 14, 2020
    Publication date: August 19, 2021
    Applicant: Kioxia Corporation
    Inventors: Masaki NOGUCHI, Akira TAKASHIMA
  • Patent number: 10907988
    Abstract: The invention provides a rotation sensor enabling simplification of manufacturing process, such as an inspection step, while maintaining measurement accuracy of the rotation sensor. Lead frames of a rotation sensor have positioning sections which contact a side surface section of a case and, in this state of contact, keep the insertion depth dimension of a magnetism detection unit in the internal space of the case to a prescribed dimension; a flange lower flat surface of a flange section is provided further towards the case bottom surface side than a flange lower flat surface of a ring-shaped rib, a portion of the outer peripheral section of the case and the ring-shaped rib are exposed in a ring shape from an exterior molding section, and the case is provided with a plurality of projections along the inner side surface of the case which constitutes the internal space.
    Type: Grant
    Filed: September 29, 2016
    Date of Patent: February 2, 2021
    Assignee: Mitsubishi Electric Cornoration
    Inventors: Tomoki Kuwamura, Akira Takashima, Hiroshi Fujita, Hideki Shimauchi, Akira Koshimizu
  • Patent number: 10833098
    Abstract: According to one embodiment, a semiconductor memory device includes a first conductive member, a first semiconductor member, and a first stacked member provided between the first conductive member and the first semiconductor member. The first stacked member includes a first insulating film, a second insulating film provided between the first insulating film and the first semiconductor member, first and second layers. The first layer includes aluminum and nitrogen and is provided between the first and second insulating films. A first thickness of the first layer along a first direction is 3 nm or less. The first direction is from the first semiconductor member toward the first conductive member. The second layer contacts the first layer, includes silicon and nitrogen, and is provided at one of a position between the first layer and the second insulating film or a position between the first layer and the first insulating film.
    Type: Grant
    Filed: March 12, 2019
    Date of Patent: November 10, 2020
    Assignee: TOSHIBA MEMORY CORPORATION
    Inventors: Akira Takashima, Tsunehiro Ino, Yuuichi Kamimuta, Ayaka Suko
  • Publication number: 20200303382
    Abstract: A semiconductor memory device includes: a first and a second electrodes aligned in a first direction; a first semiconductor layer provided between the first and the second electrodes; a second semiconductor layer provided between the first semiconductor layer and the second electrode; a first charge accumulating layer provided between the first electrode and the first semiconductor layer; and a second charge accumulating layer provided between the second electrode and the second semiconductor layer. At least one of the first and the second charge accumulating layers include: a first and a second regions including nitrogen, aluminum, and oxygen and having different positions in a second direction; and a third region provided between the first and the second regions in the second direction. Oxygen is not included in the third region or a concentration of oxygen in the third region is lower than that in the first and the second regions.
    Type: Application
    Filed: September 9, 2019
    Publication date: September 24, 2020
    Applicant: Toshiba Memory Corporation
    Inventors: Akira TAKASHIMA, Tsunehiro INO, Ayaka SUKO
  • Publication number: 20200279957
    Abstract: A semiconductor device includes a semiconductor layer, a charge storage layer disposed on the surface of the semiconductor layer via a first insulating film, and an electrode layer disposed on the surface of the charge storage layer via a second insulating film. The charge storage layer includes a first layer containing elemental aluminum and elemental nitrogen, a second layer containing elemental silicon and elemental nitrogen, and a third layer containing elemental oxygen.
    Type: Application
    Filed: August 26, 2019
    Publication date: September 3, 2020
    Applicant: TOSHIBA MEMORY CORPORATION
    Inventors: Masaki NOGUCHI, Akira TAKASHIMA, Tatsunori ISOGAI
  • Patent number: 10591314
    Abstract: To obtain a rotation sensor capable of reducing manufacturing cost, provided is a rotation sensor including: a case including: a bottom surface portion; a side surface portion; and an opening; a pair of lead frames each including a distal end inserted into the case through the opening; a magnetic detection section arranged inside the case, and configured to detect a change in magnetic field caused by a magnetic body; and a holder surrounding the magnetic detection section in cooperation with the case, the holder including: a holder main body, which has an outer peripheral surface formed along an inner peripheral surface of the side surface portion and is configured to sandwich the pair of lead frames between the outer peripheral surface and the side surface portion; and a rib formed along a forming portion of the lead frame so as to be brought into contact with the forming portion.
    Type: Grant
    Filed: April 13, 2017
    Date of Patent: March 17, 2020
    Assignee: Mitsubishi Electric Corporation
    Inventors: Tomoki Kuwamura, Akira Takashima, Hiroshi Fujita, Akira Koshimizu
  • Publication number: 20190319043
    Abstract: According to one embodiment, a semiconductor memory device includes a first conductive member, a first semiconductor member, and a first stacked member provided between the first conductive member and the first semiconductor member. The first stacked member includes a first insulating film, a second insulating film provided between the first insulating film and the first semiconductor member, first and second layers. The first layer includes aluminum and nitrogen and is provided between the first and second insulating films. A first thickness of the first layer along a first direction is 3 nm or less. The first direction is from the first semiconductor member toward the first conductive member. The second layer contacts the first layer, includes silicon and nitrogen, and is provided at one of a position between the first layer and the second insulating film or a position between the first layer and the first insulating film.
    Type: Application
    Filed: March 12, 2019
    Publication date: October 17, 2019
    Applicant: TOSHIBA MEMORY CORPORATION
    Inventors: Akira TAKASHIMA, Tsunehiro INO, Yuuichi KAMIMUTA, Ayaka SUKO
  • Patent number: 10403642
    Abstract: A semiconductor device includes a semiconductor layer, a first conductive layer, a tunneling insulating film, and a charge trapping film. The tunneling insulating film is provided between the semiconductor layer and the first conductive layer. The charge trapping film is provided between the first conductive layer and the tunneling insulating film. The charge trapping film includes a first separation layer, a first trapping layer, and a second trapping layer. The first trapping layer is positioned between the tunneling insulating film and the first separation layer. The second trapping layer is positioned between the first conductive layer and the first separation layer. A trapping efficiency of charge in the first trapping layer is higher than a trapping efficiency of charge in the second trapping layer.
    Type: Grant
    Filed: August 7, 2018
    Date of Patent: September 3, 2019
    Assignee: TOSHIBA MEMORY CORPORATION
    Inventors: Kazuhiro Matsuo, Akiko Sekihara, Akira Takashima, Tomonori Aoyama, Tatsunori Isogai, Masaki Noguchi
  • Publication number: 20190139981
    Abstract: A semiconductor device includes a semiconductor layer, a first conductive layer, a tunneling insulating film, and a charge trapping film. The tunneling insulating film is provided between the semiconductor layer and the first conductive layer. The charge trapping film is provided between the first conductive layer and the tunneling insulating film. The charge trapping film includes a first separation layer, a first trapping layer, and a second trapping layer. The first trapping layer is positioned between the tunneling insulating film and the first separation layer. The second trapping layer is positioned between the first conductive layer and the first separation layer. A trapping efficiency of charge in the first trapping layer is higher than a trapping efficiency of charge in the second trapping layer.
    Type: Application
    Filed: August 7, 2018
    Publication date: May 9, 2019
    Applicant: TOSHIBA MEMORY CORPORATION
    Inventors: Kazuhiro Matsuo, Akiko Sekihara, Akira Takashima, Tomonori Aoyama, Tatsunori Isogai, Masaki Noguchi
  • Patent number: 10088013
    Abstract: A manufacturing method includes, cutting out a plurality of rings, polishing the rings, adjusting the plurality of rings so that they exhibit circumferential lengths respectively predetermined for them, nitriding the plurality of rings, and assembling in order to layer the plurality of rings into a multi-layered ring; wherein after the rings are cut out from the pipe, each of them is polished one by one so that their order is not changed; in nitriding, they are subjected to a nitriding process in a state where they are set in a jig in order to keep their order; and in assembling, the rings are assembled so that rings that were parts originally adjacent to each other in a state of the pipe become layers that are adjacent to each other in the multi-layered ring.
    Type: Grant
    Filed: May 14, 2014
    Date of Patent: October 2, 2018
    Assignee: TOYOTA JIDOSHA KABUSHIKI KAISHA
    Inventors: Tomohiko Nishiyama, Akira Takashima, Takeshi Umeda
  • Publication number: 20180112999
    Abstract: To obtain a rotation sensor capable of reducing manufacturing cost, provided is a rotation sensor including: a case including: a bottom surface portion; a side surface portion; and an opening; a pair of lead frames each including a distal end inserted into the case through the opening; a magnetic detection section arranged inside the case, and configured to detect a change in magnetic field caused by a magnetic body; and a holder surrounding the magnetic detection section in cooperation with the case, the holder including: a holder main body, which has an outer peripheral surface formed along an inner peripheral surface of the side surface portion and is configured to sandwich the pair of lead frames between the outer peripheral surface and the side surface portion; and a rib formed along a forming portion of the lead frame so as to be brought into contact with the forming portion.
    Type: Application
    Filed: April 13, 2017
    Publication date: April 26, 2018
    Applicant: Mitsubishi Electric Corporation
    Inventors: Tomoki KUWAMURA, Akira TAKASHIMA, Hiroshi FUJITA, Akira KOSHIMIZU
  • Patent number: 9935122
    Abstract: A nonvolatile semiconductor memory device according to an embodiment comprises a memory cell, the memory cell comprising: a semiconductor layer; a control gate electrode; a charge accumulation layer disposed between the semiconductor layer and the control gate electrode; a first insulating layer disposed between the semiconductor layer and the charge accumulation layer; and a second insulating layer disposed between the charge accumulation layer and the control gate electrode, the charge accumulation layer including an insulator that includes silicon and nitrogen, and the insulator further including: a first element or a second element, the second element being different from the first element; and a third element different from the first element and the second element.
    Type: Grant
    Filed: March 16, 2016
    Date of Patent: April 3, 2018
    Assignee: TOSHIBA MEMORY CORPORATION
    Inventors: Tsunehiro Ino, Daisuke Matsushita, Yasushi Nakasaki, Misako Morota, Akira Takashima, Kenichiro Toratani
  • Patent number: 9865809
    Abstract: According to one embodiment, a nonvolatile resistance change element includes a first electrode, a second electrode and a first layer. The first electrode includes a metal element. The second electrode includes an n-type semiconductor. The first layer is formed between the first electrode and the second electrode and includes a semiconductor element. The first layer includes a conductor portion made of the metal element. The conductor portion and the second electrode are spaced apart.
    Type: Grant
    Filed: August 15, 2013
    Date of Patent: January 9, 2018
    Assignee: TOSHIBA MEMORY CORPORATION
    Inventors: Hidenori Miyagawa, Akira Takashima, Shosuke Fujii
  • Publication number: 20170299406
    Abstract: The invention provides a rotation sensor enabling simplification of manufacturing process, such as an inspection step, while maintaining measurement accuracy of the rotation sensor. Lead frames of a rotation sensor have positioning sections which contact a side surface section of a case and, in this state of contact, keep the insertion depth dimension of a magnetism detection unit in the internal space of the case to a prescribed dimension; a flange lower flat surface of a flange section is provided further towards the case bottom surface side than a flange lower flat surface of a ring-shaped rib, a portion of the outer peripheral section of the case and the ring-shaped rib are exposed in a ring shape from an exterior molding section, and the case is provided with a plurality of projections along the inner side surface of the case which constitutes the internal space.
    Type: Application
    Filed: September 29, 2016
    Publication date: October 19, 2017
    Applicant: Mitsubishi Electric Corporation
    Inventors: Tomoki KUWAMURA, Akira TAKASHIMA, Hiroshi FUJITA, Hideki SHIMAUCHI, Akira KOSHIMIZU
  • Publication number: 20170263640
    Abstract: According to one embodiment, a nonvolatile semiconductor memory device includes a semiconductor layer, a first electrode, first to third layers, and nitride portions of nitride molecules. The first layer is provided between the semiconductor layer and the first electrode. The second layer is provided between the first layer and the first electrode. The second energy of a conduction band edge of the second layer is lower than a first energy of a conduction band edge of the first layer. The second layer includes a first region and a second region. The first region is provided between the first layer and the second region. The third layer is provided between the second layer and the first electrode. The third energy of a conduction band edge of the third layer is higher than the second energy.
    Type: Application
    Filed: March 10, 2017
    Publication date: September 14, 2017
    Applicant: KABUSHIKI KAISHA TOSHIBA
    Inventors: Akira TAKASHIMA, Kenichiro Toratani, Masayuki Tanaka
  • Patent number: 9631947
    Abstract: Provided is a rotation sensor capable of reducing manufacturing costs and improving workability. The rotation sensor includes: a case including: a bottom surface portion; and a side surface portion that defines a hollow internal space in cooperation with the bottom surface portion; a plurality of lead frames respectively having distal ends inserted into the case; a magnetic detection section provided to the distal ends of the plurality of lead frames arranged in parallel; a spacer provided between the plurality of lead frames and the side surface portion so as to be held in contact with an internal wall surface of the side surface portion; and an internal filling resin for filling a space portion of the hollow internal space except for the spacer, the magnetic detection section, and the plurality of lead frames.
    Type: Grant
    Filed: April 6, 2015
    Date of Patent: April 25, 2017
    Assignee: Mitsubishi Electric Corporation
    Inventor: Akira Takashima