Abstract: To obtain a rotation sensor capable of reducing manufacturing cost, provided is a rotation sensor including: a case including: a bottom surface portion; a side surface portion; and an opening; a pair of lead frames each including a distal end inserted into the case through the opening; a magnetic detection section arranged inside the case, and configured to detect a change in magnetic field caused by a magnetic body; and a holder surrounding the magnetic detection section in cooperation with the case, the holder including: a holder main body, which has an outer peripheral surface formed along an inner peripheral surface of the side surface portion and is configured to sandwich the pair of lead frames between the outer peripheral surface and the side surface portion; and a rib formed along a forming portion of the lead frame so as to be brought into contact with the forming portion.

Abstract: According to one embodiment, a semiconductor memory device includes a first conductive member, a first semiconductor member, and a first stacked member provided between the first conductive member and the first semiconductor member. The first stacked member includes a first insulating film, a second insulating film provided between the first insulating film and the first semiconductor member, first and second layers. The first layer includes aluminum and nitrogen and is provided between the first and second insulating films. A first thickness of the first layer along a first direction is 3 nm or less. The first direction is from the first semiconductor member toward the first conductive member. The second layer contacts the first layer, includes silicon and nitrogen, and is provided at one of a position between the first layer and the second insulating film or a position between the first layer and the first insulating film.

Abstract: A semiconductor device includes a semiconductor layer, a first conductive layer, a tunneling insulating film, and a charge trapping film. The tunneling insulating film is provided between the semiconductor layer and the first conductive layer. The charge trapping film is provided between the first conductive layer and the tunneling insulating film. The charge trapping film includes a first separation layer, a first trapping layer, and a second trapping layer. The first trapping layer is positioned between the tunneling insulating film and the first separation layer. The second trapping layer is positioned between the first conductive layer and the first separation layer. A trapping efficiency of charge in the first trapping layer is higher than a trapping efficiency of charge in the second trapping layer.

Abstract: A semiconductor device includes a semiconductor layer, a first conductive layer, a tunneling insulating film, and a charge trapping film. The tunneling insulating film is provided between the semiconductor layer and the first conductive layer. The charge trapping film is provided between the first conductive layer and the tunneling insulating film. The charge trapping film includes a first separation layer, a first trapping layer, and a second trapping layer. The first trapping layer is positioned between the tunneling insulating film and the first separation layer. The second trapping layer is positioned between the first conductive layer and the first separation layer. A trapping efficiency of charge in the first trapping layer is higher than a trapping efficiency of charge in the second trapping layer.

Abstract: A manufacturing method includes, cutting out a plurality of rings, polishing the rings, adjusting the plurality of rings so that they exhibit circumferential lengths respectively predetermined for them, nitriding the plurality of rings, and assembling in order to layer the plurality of rings into a multi-layered ring; wherein after the rings are cut out from the pipe, each of them is polished one by one so that their order is not changed; in nitriding, they are subjected to a nitriding process in a state where they are set in a jig in order to keep their order; and in assembling, the rings are assembled so that rings that were parts originally adjacent to each other in a state of the pipe become layers that are adjacent to each other in the multi-layered ring.

Abstract: To obtain a rotation sensor capable of reducing manufacturing cost, provided is a rotation sensor including: a case including: a bottom surface portion; a side surface portion; and an opening; a pair of lead frames each including a distal end inserted into the case through the opening; a magnetic detection section arranged inside the case, and configured to detect a change in magnetic field caused by a magnetic body; and a holder surrounding the magnetic detection section in cooperation with the case, the holder including: a holder main body, which has an outer peripheral surface formed along an inner peripheral surface of the side surface portion and is configured to sandwich the pair of lead frames between the outer peripheral surface and the side surface portion; and a rib formed along a forming portion of the lead frame so as to be brought into contact with the forming portion.

Abstract: A nonvolatile semiconductor memory device according to an embodiment comprises a memory cell, the memory cell comprising: a semiconductor layer; a control gate electrode; a charge accumulation layer disposed between the semiconductor layer and the control gate electrode; a first insulating layer disposed between the semiconductor layer and the charge accumulation layer; and a second insulating layer disposed between the charge accumulation layer and the control gate electrode, the charge accumulation layer including an insulator that includes silicon and nitrogen, and the insulator further including: a first element or a second element, the second element being different from the first element; and a third element different from the first element and the second element.

Abstract: According to one embodiment, a nonvolatile resistance change element includes a first electrode, a second electrode and a first layer. The first electrode includes a metal element. The second electrode includes an n-type semiconductor. The first layer is formed between the first electrode and the second electrode and includes a semiconductor element. The first layer includes a conductor portion made of the metal element. The conductor portion and the second electrode are spaced apart.

Abstract: The invention provides a rotation sensor enabling simplification of manufacturing process, such as an inspection step, while maintaining measurement accuracy of the rotation sensor. Lead frames of a rotation sensor have positioning sections which contact a side surface section of a case and, in this state of contact, keep the insertion depth dimension of a magnetism detection unit in the internal space of the case to a prescribed dimension; a flange lower flat surface of a flange section is provided further towards the case bottom surface side than a flange lower flat surface of a ring-shaped rib, a portion of the outer peripheral section of the case and the ring-shaped rib are exposed in a ring shape from an exterior molding section, and the case is provided with a plurality of projections along the inner side surface of the case which constitutes the internal space.

Abstract: According to one embodiment, a nonvolatile semiconductor memory device includes a semiconductor layer, a first electrode, first to third layers, and nitride portions of nitride molecules. The first layer is provided between the semiconductor layer and the first electrode. The second layer is provided between the first layer and the first electrode. The second energy of a conduction band edge of the second layer is lower than a first energy of a conduction band edge of the first layer. The second layer includes a first region and a second region. The first region is provided between the first layer and the second region. The third layer is provided between the second layer and the first electrode. The third energy of a conduction band edge of the third layer is higher than the second energy.

Abstract: Provided is a rotation sensor capable of reducing manufacturing costs and improving workability. The rotation sensor includes: a case including: a bottom surface portion; and a side surface portion that defines a hollow internal space in cooperation with the bottom surface portion; a plurality of lead frames respectively having distal ends inserted into the case; a magnetic detection section provided to the distal ends of the plurality of lead frames arranged in parallel; a spacer provided between the plurality of lead frames and the side surface portion so as to be held in contact with an internal wall surface of the side surface portion; and an internal filling resin for filling a space portion of the hollow internal space except for the spacer, the magnetic detection section, and the plurality of lead frames.

Abstract: A nonvolatile semiconductor memory device according to an embodiment comprises a memory cell, the memory cell comprising: a semiconductor layer; a control gate electrode; a charge accumulation layer disposed between the semiconductor layer and the control gate electrode; a first insulating layer disposed between the semiconductor layer and the charge accumulation layer; and a second insulating layer disposed between the charge accumulation layer and the control gate electrode, the charge accumulation layer including an insulator that includes silicon and nitrogen, and the insulator further including: a first element or a second element, the second element being different from the first element; and a third element different from the first element and the second element.

Abstract: A magnetic memory according to an embodiment includes: a multilayer structure including a semiconductor layer and a first ferromagnetic layer; a first wiring line electrically connected to the semiconductor layer; a second wiring line electrically connected to the first ferromagnetic layer; and a voltage applying unit electrically connected between the first wiring line and the second wiring line to apply a first voltage between the semiconductor layer and the first ferromagnetic layer during a write operation, a magnetization direction of the first ferromagnetic layer being switchable by applying the first voltage.

Abstract: According to one embodiment, a nonvolatile variable resistance element includes a first electrode, a second electrode, a variable resistance layer, and a dielectric layer. The second electrode includes a metal element. The variable resistance layer is arranged between the first electrode and the second electrode. A resistance change is reversibly possible in the variable resistance layer according to move the metal element in and out. The dielectric layer is inserted between the second electrode and the variable resistance layer and has a diffusion coefficient of the metal element smaller than that of the variable resistance layer.

Abstract: According to one embodiment, a nonvolatile memory device includes a memory section. The memory section includes a first insulating layer, a second insulating layer and a pair of electrodes. The second insulating layer is formed on and in contact with the first insulating layer. The second insulating layer has at least one of a composition different from a composition of the first insulating layer and a phase state different from a phase state of the first insulating layer. The pair of electrodes is capable of passing a current through a current path along a boundary portion between the first insulating layer and the second insulating layer. An electrical resistance of the current path is changed by a voltage applied between the pair of electrodes.

Abstract: Provided is a rotation sensor capable of reducing manufacturing costs and improving workability. The rotation sensor includes: a case including: a bottom surface portion; and a side surface portion that defines a hollow internal space in cooperation with the bottom surface portion; a plurality of lead frames respectively having distal ends inserted into the case; a magnetic detection section provided to the distal ends of the plurality of lead frames arranged in parallel; a spacer provided between the plurality of lead frames and the side surface portion so as to be held in contact with an internal wall surface of the side surface portion; and an internal filling resin for filling a space portion of the hollow internal space except for the spacer, the magnetic detection section, and the plurality of lead frames.

Abstract: A nonvolatile semiconductor memory according to an embodiment includes: a semiconductor region; a first insulating film formed on the semiconductor region; a charge storage film formed on the first insulating film; a hydrogen diffusion preventing film formed on the charge storage film; a second insulating film formed on the hydrogen diffusion preventing film; a control gate electrode formed on the second insulating film; a hydrogen discharge film formed on the control gate electrode; and a sidewall formed on a side surface of a multilayer structure including the first insulating film, the charge storage film, the hydrogen diffusion preventing film, the second insulating film, and the control gate electrode, the sidewall containing a material for preventing hydrogen from diffusing.

Abstract: A manufacturing method includes, cutting out a plurality of rings, polishing the rings, adjusting the plurality of rings so that they exhibit circumferential lengths respectively predetermined for them, nitriding the plurality of rings, and assembling in order to layer the plurality of rings into a multi-layered ring; wherein after the rings are cut out from the pipe, each of them is polished one by one so that their order is not changed; in nitriding, they are subjected to a nitriding process in a state where they are set in a jig in order to keep their order; and in assembling, the rings are assembled so that rings that were parts originally adjacent to each other in a state of the pipe become layers that are adjacent to each other in the multi-layered ring.

Abstract: A magnetic memory according to an embodiment includes: a multilayer structure including a semiconductor layer and a first ferromagnetic layer; a first wiring line electrically connected to the semiconductor layer; a second wiring line electrically connected to the first ferromagnetic layer; and a voltage applying unit electrically connected between the first wiring line and the second wiring line to apply a first voltage between the semiconductor layer and the first ferromagnetic layer during a write operation, a magnetization direction of the first ferromagnetic layer being switchable by applying the first voltage.

Abstract: In order to restrain the length of an endless metal ring from dispersing, a method of manufacturing a CVT belt has a first-stage stretching step of extending a circumferential length of an endless metal belt by widening distances among rollers. The method includes a measuring step of measuring a spring-back amount of the endless metal belt in the first-stage stretching step. The method includes a calculating step of calculating a predicted spring-back amount that is predicted from the measured spring-back amount. The method also includes a second-stage stretching step of stretching the endless metal belt to process the endless metal belt into a predetermined circumferential length by further widening the distances among the rollers based on the predicted spring-back amount.