Abstract: Disclosed are methods, systems and devices for operation of non-volatile memory devices. In one aspect, a correlated electron switch (CES) device may be placed in any one of multiple memory states in a write operation. A plurality of bitcells may be connectable to a common source voltage during a two-phase operation to place individual bitcells in intended impedance states.

Abstract: Example methods are provided for a first endpoint to transfer a first data set and a second data set to a second endpoint using a multipath connection. The method may comprise detecting the first data set and the second data set from an application executing on the first endpoint for transfer to the second endpoint. The method may comprise, in response to determination that in-order transfer is not required for the first data set and the second data set, establishing a first subflow of a multipath connection with the second endpoint to send the first data set and establishing a second subflow of the multipath connection to send the second data set. The method may further comprise sending the first data set on the first subflow and the second data set on the second subflow to the second endpoint.

Abstract: Systems and methods are provided to enable control and placement of data repositories. In some embodiments, the system segments data into zones. A website, for example, may need to segment data according to location. In this example, a zone may be created for North America and another zone may be created for Europe. Data related to operations executed in North America, for example, can be placed in the North America zone and data related to transactions in Europe can be placed in the Europe zone. According to some embodiments, the system may use zones to accommodate a range of deployment scenarios.

Abstract: Systems and methods are provided to enable control and placement of data repositories. In some embodiments, the system segments data into zones. A website, for example, may need to segment data according to location. In this example, a zone may be created for North America and another zone may be created for Europe. Data related to operations executed in North America, for example, can be placed in the North America zone and data related to transactions in Europe can be placed in the Europe zone. According to some embodiments, the system may use zones to accommodate a range of deployment scenarios.

Abstract: Techniques disclosed herein provide an approach for providing throughput resilience during link failover when links are aggregated in a link aggregation group (LAG). In one embodiment, failure of a link in the LAG may be detected, and a Transmission Control Protocol/Interact Protocol (TCP/IP) stack notified to ignore packet losses and not perform network congestion avoidance procedure(s) for one round-trip timeout (RTO) period. In a virtualized system in particular, a virtual switch may be configured to generate events in response to detected link failures and notify TCP/IP stacks of a hypervisor and/or virtual machines (VMs) of the link failures. In turn, the notified TCP/IP stacks of the hypervisor and/or VMs may ignore packet losses and not perform network congestion avoidance procedure(s) for one RTO period.

Abstract: Example methods are provided to perform data transfer between a first endpoint and a second endpoint. The method may comprise detecting an elephant flow of data from an application executing on the first endpoint for transfer to the second endpoint; and splitting the elephant flow to obtain first packets and second packets. The first endpoint may have cognizance of a first path and a second path between a first network interface of the first endpoint and a second network interface of the second endpoint. The method may comprise establishing a first subflow and a second subflow of a multipath connection with the second endpoint; and sending, over the first network interface, the first packets on the first subflow and the second packets on the second subflow to the second network interface.

Abstract: Disclosed are methods, systems and devices for operation of non-volatile memory devices. In one aspect, a correlated electron switch (CES) device may be placed in any one of multiple memory states in a write operation. A plurality of bitcells may be connectable to a common source voltage during a two-phase operation to place individual bitcells in intended impedance states.

Abstract: Disclosed are methods, systems and devices for operation of non-volatile memory devices. In one aspect, a correlated electron switch (CES) device may be placed in any one of multiple memory states in a write operation. Limiting current between terminals of the non-volatile memory device during read operations may enable use of higher voltages for higher realized gain. Additionally, bipolar write operations for set and reset may enable an increased write window and enhanced durability for a CES device.

Abstract: Disclosed are methods, systems and devices for operation of non-volatile memory devices. In one aspect, a correlated electron switch (CES) device may be placed in any one of multiple memory states in a write operation. Limiting current between terminals of the non-volatile memory device during read operations may enable use of higher voltages for higher realized gain.

Abstract: Various implementations described herein are directed to an integrated circuit having a memory cell array disposed in a first area of the integrated circuit. The memory cell array may include memory cells with first transistors of multiple types. The integrated circuit may include a process sensor disposed in a second area of the integrated circuit that is different than the first area. The process sensor may include a process detector having second transistors of the multiple types that are separate from the first transistors. The second transistors of the process detector may be arranged for detecting process variation of the memory cells of the memory cell array.

Abstract: Many kinds of filters are found in electronic circuits and provide a range of signal processing applications. Such filters can be passive, active, analogue or digital and work across a range of frequencies. Present techniques provide an electronic filter circuit comprising resistive and capacitive elements, wherein a resistive element of the filter circuit is provided by a correlated electron material device.

Abstract: Various implementations described herein are directed to a circuit. The circuit may include a memory circuit having a first latch. The circuit may include a power-on-reset circuit having a second latch coupled to the first latch. The second latch may be configured to reset the first latch to a predetermined state at power-up.

Abstract: Subject matter provided may relate to devices, such as conducting elements, which operate to place correlated electron switch elements into first and second impedance states. In embodiments, conducting elements are maintained to be at least partially closed continuously during first and second phases of coupling the CES elements between a common source voltage and a corresponding bitline.

Abstract: Disclosed are methods, systems and devices for operation of non-volatile memory devices. In one aspect, a correlated electron switch (CES) device may be placed in any one of multiple memory states in a write operation. A plurality of bitcells may be connectable to a common source voltage during a two-phase operation to place individual bitcells in intended impedance states.

Abstract: Subject matter disclosed herein may relate to correlated electron switch devices, and may relate more particularly to digital to analog conversion using correlated electron switch devices ces.

Abstract: Disclosed are methods, systems and devices for powering up devices including non-volatile memory elements in an array of non-volatile memory elements. In one aspect, during a sequence for powering up an integrated device, non-volatile memory elements may be isolated from voltage supplies to avoid in advertent changes of memory states stored in the non-volatile memory elements.

Abstract: Disclosed are methods, systems and devices for operation of non-volatile memory devices. In one aspect, a correlated electron switch (CES) device may be placed in any one of multiple memory states in a write operation. Limiting current between terminals of the non-volatile memory device during read operations may enable use of higher voltages for higher realized gain.

Abstract: A method of writing a state to a correlated electron element in a storage circuit, comprising receiving a write command to write the state into the correlated electron element; reading a stored state of the correlated electron element; comparing the state and the stored state; and enabling a write driver to write the state into the correlated electron element when the state and read state are different.

Abstract: Disclosed are methods, systems and devices for operation of non-volatile memory devices. In one aspect, a correlated electron switch (CES) device may be placed in any one of multiple memory states in a write operation. A plurality of bitcells may be connectable to a common source voltage during a two-phase operation to place individual bitcells in intended impedance states.

Abstract: An example method is provided to perform egress network interface selection for a network connection with a second endpoint device. The method may comprise: detecting multiple egress network interfaces of the first endpoint device that are capable of communicating with the second endpoint device via multiple routes, wherein each route involves one of the multiple egress network interfaces; and selecting, from the multiple network egress interfaces, an egress network interface based on multiple maximum transmission unit (MTU) values associated with the multiple routes. The method may further comprise setting a size limit for packets transmitted from the second endpoint device to the first endpoint device during the network connection; configuring a connection establishment packet that includes the size limit to establish the network connection; and sending the connection establishment packet to the second endpoint device via the selected egress network interface.