Abstract: A rover includes a base having wheels and a propulsion system coupled to the wheels to propel the rover around a field. A tower is coupled to the base and extends over the base. Sensors are set on the tower and the base and are configured to sense environmental conditions around the rover at different elevations. A computing system includes a processor and memory. The memory is configured to receive measured data from the sensors and determine an amount and manner of water to be dispensed on plant life in the field.

Abstract: A nonvolatile memory storage device includes a ferroelectric (FE) material coupled with a piezoresistive (PR) material through an inherent piezoelectric response of the FE material, wherein an electrical resistance of the PR material is dependent on a compressive stress applied thereto, the compressive stress caused by a remanent strain of the FE material resulting from a polarization of the FE material, such that a polarized state of the FE material results in a first resistance value of the PR material, and a depolarized state of the FE material results in a second resistance value of the PR material.

Abstract: A nonvolatile memory storage device includes a ferroelectric (FE) material coupled with a piezoresistive (PR) material through an inherent piezoelectric response of the FE material, wherein an electrical resistance of the PR material is dependent on a compressive stress applied thereto, the compressive stress caused by a remanent strain of the FE material resulting from a polarization of the FE material, such that a polarized state of the FE material results in a first resistance value of the PR material, and a depolarized state of the FE material results in a second resistance value of the PR material.

Abstract: A method for fabricating the phase change memory cells. The method includes forming an electrically conductive bottom electrode within a substrate. A heat shield is formed within the substrate and above the bottom electrode. The heat shield is thermally coupled to the bottom electrode, includes a sidewall and extends away from the bottom electrode. A heating element is formed within the sidewall of the heat shield. The heating element is electrically coupled to the bottom electrode and is configured to generate heat during programming of the phase change memory cell.

Abstract: A nonvolatile memory storage device includes a ferroelectric (FE) material coupled with a piezoresistive (PR) material through an inherent piezoelectric response of the FE material, wherein an electrical resistance of the PR material is dependent on a compressive stress applied thereto, the compressive stress caused by a remanent strain of the FE material resulting from a polarization of the FE material, such that a polarized state of the FE material results in a first resistance value of the PR material, and a depolarized state of the FE material results in a second resistance value of the PR material.

Abstract: A controllable emitter of an irrigation apparatus including a drip line and a control station configured to control a pressure of pressurized fluid in the drip line is provided. The controllable emitter is disposable along the drip line and includes a container coupled to the drip line, the container being formed to define an interior and including an inlet through which the pressurized fluid is receivable in the interior from the drip line and an outlet through which the pressurized fluid is exhaustible from the interior, a piston, including a magnetic element, disposed at least partially in the container to occupy a position in accordance with the pressure of the pressurized fluid and a sensor configured to sense a position of the magnetic element and to communicate a sensed position to the control station.

Abstract: An example embodiment is a phase change memory cell including a bottom electrode and phase change material carried within a via above the bottom electrode. A surfactant layer is deposited above the bottom electrode. The surfactant layer includes a surfactant configured to lower an interfacial force between the phase change material and the via surface.

Abstract: A controllable emitter of an irrigation apparatus including a drip line and a control station configured to control a pressure of pressurized fluid in the drip line is provided. The controllable emitter is disposable along the drip line and includes a container coupled to the drip line, the container being formed to define an interior and including an inlet through which the pressurized fluid is receivable in the interior from the drip line and an outlet through which the pressurized fluid is exhaustible from the interior, a piston, including a magnetic element, disposed at least partially in the container to occupy a position in accordance with the pressure of the pressurized fluid and a sensor configured to sense a position of the magnetic element and to communicate a sensed position to the control station.

Abstract: A phase change memory cell and a method for fabricating the phase change memory cell. The phase change memory cell includes a bottom electrode and a first non-conductive layer. The first non-conductive layer defines a first well, a first electrically conductive liner lines the first well, and the first well is filled with a phase change material in the phase change memory cell. A second non-conductive layer is deposited above the first non-conductive layer. A second well is defined by the second non-conductive layer and positioned directly above the first well. A second electrically conductive liner lines at least one wall of the second well such that the second electrically conductive liner is not in physical contact with the first electrically conductive liner. Furthermore, the phase change material is deposited in the second well.

Abstract: A memory cell and a method of making the same, that includes insulating material deposited on a substrate, a bottom electrode formed within the insulating material, a plurality of insulating layers deposited above the bottom electrode and at least one of which acts as an intermediate insulating layer. A via is defined in the insulating layers above the intermediate insulating layer. A channel is created for etch with a sacrificial spacer. A pore is defined in the intermediate insulating layer. All insulating layers above the intermediate insulating layer are removed, and the entirety of the remaining pore is filled with phase change material. An upper electrode is formed above the phase change material.

Abstract: An example embodiment disclosed is a process for fabricating a phase change memory cell. The method includes forming a bottom electrode, creating a pore in an insulating layer above the bottom electrode, depositing piezoelectric material in the pore, depositing phase change material in the pore proximate the piezoelectric material, and forming a top electrode over the phase change material. Depositing the piezoelectric material in the pore may include conforming the piezoelectric material to at least one wall defining the pore such that the piezoelectric material is deposited between the phase change material and the wall. The conformal deposition may be achieved by chemical vapor deposition (CVD) or by atomic layer deposition (ALD).

Abstract: A controllable emitter of an irrigation apparatus including a drip line having pressurized fluid therein is provided. The controllable emitter includes a container coupled to the drip line, the container being formed to define an interior and including an inlet through which the pressurized fluid is receivable in the interior from the drip line and an outlet through which the pressurized fluid is exhaustible from the interior, a magnetic stopper, which is normally disposable in a first position such that the magnetic stopper prevents a flow of the pressurized fluid through the outlet and which is actively disposable in a second position such that the magnetic stopper permits the flow and a controllable actuator configured to generate a magnetic field operable to urge the magnetic stopper to move from the first position to the second position.

Abstract: Techniques for acquiring and analyzing environmental and personnel presence, location and identification data from a health care facility to manage operations of the health care facility with regards to personnel tracking, patient comfort and/or enforcement of hygienic protocols are provided. In one aspect, a method of managing operation of a health care facility is provided. The method includes the steps of: acquiring data regarding i) environmental factors in the health care facility and ii) a presence, a location and an identity of personnel in the health care facility using a sensing platform system having a plurality of sensing points throughout the health care facility, wherein the sensing platform is configured to identify the personnel in the health care facility via radio-frequency identification (RFID); and analyzing the data to provide real-time analytics for managing operation of the health care facility.

Abstract: A nonvolatile memory storage device includes a ferroelectric (FE) material coupled with a piezoresistive (PR) material through an inherent piezoelectric response of the FE material, wherein an electrical resistance of the PR material is dependent on a compressive stress applied thereto, the compressive stress caused by a remanent strain of the FE material resulting from a polarization of the FE material, such that a polarized state of the FE material results in a first resistance value of the PR material, and a depolarized state of the FE material results in a second resistance value of the PR material.

Abstract: The present invention in one embodiment provides a memory device including a first electrode; a second electrode; and a memory cell positioned between the first electrode and the second electrode, the memory cell including a core of a first phase change material and a cladding of a second phase change material, wherein the first phase change material has a lower crystallization temperature than the second phase change material. The present invention also provides methods of forming the above described memory device.

Abstract: A material can be locally etched with arbitrary changes in the direction of the etch. A ferromagnetic-material-including catalytic particle is employed to etch the material. A wet etch chemical or a plasma condition can be employed in conjunction with the ferromagnetic-material-including catalytic particle to etch a material through a catalytic reaction between the catalytic particle and the material. During a catalytic etch process, a magnetic field is applied to the ferromagnetic-material-including catalytic particle to direct the movement of the particle to any direction, which is chosen so as to form a contiguous cavity having at least two cavity portions having different directions. The direction of the magnetic field can be controlled so as to form the contiguous cavity in a preplanned pattern, and each segment of the contiguous cavity can extend along an arbitrary direction.

Abstract: A method for fabricating the phase change memory cells. The method includes forming an electrically conductive bottom electrode within a substrate. A heat shield is formed within the substrate and above the bottom electrode. The heat shield is thermally coupled to the bottom electrode, includes a sidewall and extends away from the bottom electrode. A heating element is formed within the sidewall of the heat shield. The heating element is electrically coupled to the bottom electrode and is configured to generate heat during programming of the phase change memory cell.

Abstract: A phase change memory cell, an array of the phase change memory cells, and a method for fabricating the phase change memory cells. The phase change memory cell includes a bottom electrode, a heating element, and a heat shield. During programming of the phase change memory cell, the bottom electrode passes current to the phase change memory cell. The heating element is electrically coupled to the bottom electrode and generates heat during the programming of the phase change memory cell. The heat shield is thermally conductive and surrounds at least a portion of the heating element. The heat shield conducts heat generated during programming of the phase change memory cell to the bottom electrode.

Abstract: A material can be locally etched with arbitrary changes in the direction of the etch. A ferromagnetic-material-including catalytic particle is employed to etch the material. A wet etch chemical or a plasma condition can be employed in conjunction with the ferromagnetic-material-including catalytic particle to etch a material through a catalytic reaction between the catalytic particle and the material. During a catalytic etch process, a magnetic field is applied to the ferromagnetic-material-including catalytic particle to direct the movement of the particle to any direction, which is chosen so as to form a contiguous cavity having at least two cavity portions having different directions. The direction of the magnetic field can be controlled so as to form the contiguous cavity in a preplanned pattern, and each segment of the contiguous cavity can extend along an arbitrary direction.

Abstract: A phase change memory cell and a method for fabricating the phase change memory cell. The phase change memory cell includes a bottom electrode and a first non-conductive layer. The first non-conductive layer defines a first well, a first electrically conductive liner lines the first well, and the first well is filled with a phase change material in the phase change memory cell.