Abstract: A method of producing optoelectronic semiconductor chips includes growing a semiconductor layer sequence on a growth substrate; applying at least one metallization to a contact side of the semiconductor layer sequence, which contact side faces away from the growth substrate; attaching an intermediate carrier to the semiconductor layer sequence, wherein a sacrificial layer is attached between the intermediate carrier and the semiconductor layer sequence; removing the growth substrate from the semiconductor layer sequence; structuring the semiconductor layer sequence into individual chip regions; at least partially dissolving the sacrificial layer; and subsequently removing the intermediate carrier, wherein, in removing the intermediate carrier, part of the sacrificial layer is still present, removing the intermediate carrier includes mechanically breaking remaining regions of the sacrificial layer, and the sacrificial layer is completely removed after removing the intermediate carrier.

Abstract: A method for producing a solar cell is described, in which a plurality of doped regions are to be etched-back selectively or over their entire surface. Once a semiconductor substrate (1) has been provided, various doped regions (3, 5) are formed in partial regions of a surface of the semiconductor substrate, the various doped regions (3, 5) differing as regards their doping concentration and/or their doping polarity. The various doped regions (3, 5) are then purposively etched-back in order to achieve desired doping profiles, and finally electrical contacts (21) are formed at least at some of the doped regions (3, 5). The etching-back of the various doped regions takes place in a common etching operation in an etching medium.

Abstract: The method is designed for producing optoelectronic semiconductor chips and comprises the steps: A) providing a carrier substrate (1), B) applying a semiconductor layer sequence (2) onto the carrier substrate (1), and C) detaching the finished semiconductor layer sequence (2) from the carrier substrate (1) by means of laser radiation (R) with a wavelength (L) through the carrier substrate (1), wherein the semiconductor layer sequence (2) has a buffer layer stack (20) and a functional stack with an active layer (21) for generating light (22), the absorber layer (23) is grown within the buffer layer stack (20) from a material for absorbing the laser radiation (R) and all the remaining layers (24 and 25) of the buffer layer stack (20) are transmissive to the laser radiation (R), a material of the functional stack (22) preferably has an absorbent action for the laser radiation (R), and in step C) the semiconductor layer sequence (2) is detached in the region of the absorber layer (23).

Abstract: An epitaxy substrate (11, 12, 13) for a nitride compound semiconductor material is specified, which has a nucleation layer (2) directly on a substrate (1) wherein the nucleation layer (2) has at least one first layer (21) composed of AlON with a column structure. A method for producing an epitaxy substrate and an optoelectronic semiconductor chip comprising an epitaxy substrate are furthermore specified.

Abstract: A method is provided for producing an optoelectronic device, comprising the steps of providing a substrate, applying a nucleation layer on a surface of the substrate, applying and patterning a mask layer on the nucleation layer, growing a nitride semiconductor in a first growth step, wherein webs are laid which form a lateral lattice, wherein the webs have trapezoidal cross-sectional areas in places in the direction of growth, and laterally overgrowing the webs with a nitride semiconductor in a second growth step, to close spaces between the webs.

Abstract: In a process for determining the 3D coordinates of an object (1), a partial surface of the object (1) is recorded by a 3D measuring device (2), and the 3D coordinates of this partial surface of the object (1) are determined. Additional partial surfaces of the object (1) are recorded by the 3D measuring device (2), and the 3D coordinates of these partial surfaces are determined. The 3D coordinates of the partial surfaces of the object (1) are assembled by a processing device (3). In order to improve this process, the exposures and/or the 3D coordinates of one or more partial surfaces of the object (1) are represented on a head-mounted display (4).

Abstract: In at least one embodiment, the method is designed to produce an optoelectronic semiconductor chip. The method includes at least the following steps in the stated sequence: A) providing a growth substrate with a growth side, B) depositing at least one nucleation layer based on AlxGa1-xOyN1-y on the growth side, C) depositing and structuring a masking layer, D) optionally growing a GaN-based seed layer in regions on the nucleation layer not covered by the masking layer, E) partially removing the nucleation layer and/or the seed layer in regions not covered by the masking layer or applying a second masking layer on the nucleation layer or on the seed layer in the regions not covered by the masking layer, and F) growing an AlInGaN-based semiconductor layer sequence with at least one active layer.

Abstract: The method is designed for producing optoelectronic semiconductor chips and comprises the steps: A) providing a carrier substrate (1), B) applying a semiconductor layer sequence (2) onto the carrier substrate (1), and C) detaching the finished semiconductor layer sequence (2) from the carrier substrate (1) by means of laser radiation (R) with a wavelength (L) through the carrier substrate (1), wherein the semiconductor layer sequence (2) has a buffer layer stack (20) and a functional stack with an active layer (21) for generating light (22), the absorber layer (23) is grown within the buffer layer stack (20) from a material for absorbing the laser radiation (R) and all the remaining layers (24 and 25) of the buffer layer stack (20) are transmissive to the laser radiation (R), a material of the functional stack (22) preferably has an absorbent action for the laser radiation (R), and in step C) the semiconductor layer sequence (2) is detached in the region of the absorber layer (23).

Abstract: A method is provided for producing an optoelectronic device, comprising the steps of providing a substrate, applying a nucleation layer on a surface of the substrate, applying and patterning a mask layer on the nucleation layer, growing a nitride semiconductor in a first growth step, wherein webs are laid which form a lateral lattice, wherein the webs have trapezoidal cross-sectional areas in places in the direction of growth, and laterally overgrowing the webs with a nitride semiconductor in a second growth step, to close spaces between the webs.

Abstract: In at least one embodiment, the method is designed to produce an optoelectronic semiconductor chip. The method includes at least the following steps in the stated sequence: A) providing a growth substrate with a growth side, B) depositing at least one nucleation layer based on AlxGa1-xOyN1-y on the growth side, C) depositing and structuring a masking layer, D) optionally growing a GaN-based seed layer in regions on the nucleation layer not covered by the masking layer, E) partially removing the nucleation layer and/or the seed layer in regions not covered by the masking layer or applying a second masking layer on the nucleation layer or on the seed layer in the regions not covered by the masking layer, and F) growing an AlInGaN-based semiconductor layer sequence with at least one active layer.

Abstract: An epitaxy substrate (11, 12, 13) for a nitride compound semiconductor material is specified, which has a nucleation layer (2) directly on a substrate (1) wherein the nucleation layer (2) has at least one first layer (21) composed of AlON with a column structure. A method for producing an epitaxy substrate and an optoelectronic semiconductor chip comprising an epitaxy substrate are furthermore specified.

Abstract: A photonic crystal, which is a periodically arranged structure made of free-standing columns, has a base material of at least one metal or a metal alloy. Intermediate spaces between the columns allow passage of a gas to be analyzed. The photonic crystal has predefined imperfections, by which at least one resonator is formed, the resonant frequency of which is in a frequency range which is absorbed by a gas component to be detected. A heating unit heats at least some of the columns and at least one detector element extracts the energy present in the resonator in the heated state under the action of the gas to be analyzed. The device may have extremely small dimensions and very low energy consumption.

Abstract: An arrangement and a method measures cell vitalities with a sensor array. The sensor array is formed on a surface of a semiconductor chip. The semiconductor chip has integrated circuits and an integrated circuit is associated with each sensor of the sensor array, for processing the measurement signals of the respective sensor. The integrated circuits are formed in the semiconductor chip spatially in each case below the associated sensor and neighboring sensors of the sensor array have a center-to-center in the range of micrometers. The pH and/or pO2 can be measured in the environment of a living cell.

Abstract: A biosensor array having a substrate, a plurality of biosensor zones arranged on the substrate, each of which has a first terminal and a second terminal, at least one drive line and at least one detection line, the at least one drive line being electrically insulated from the at least one detection line. In each case the first terminal of each biosensor zone is coupled to precisely one of the at least one drive line and the second terminal of each biosensor zone is coupled to precisely one of the at least one detection line, and at least one of the at least one drive line and at least one of the at least one detection line is coupled to at least two of the biosensor zones.

Abstract: A photonic crystal, which is a periodically arranged structure made of free-standing columns, has a base material of at least one metal or a metal alloy. Intermediate spaces between the columns allow passage of a gas to be analyzed. The photonic crystal has predefined imperfections, by which at least one resonator is formed, the resonant frequency of which is in a frequency range which is absorbed by a gas component to be detected. A heating unit heats at least some of the columns and at least one detector element extracts the energy present in the resonator in the heated state under the action of the gas to be analyzed. The device may have extremely small dimensions and very low energy consumption.

Abstract: A sensor arrangement for detecting particles potentially contained in an analyte is disclosed. The arrangement includes a substrate; at least one sensor electrode which is arranged on and/or in the substrate and on which scavenger molecules, which hybridize with particles that are potentially contained in an analyte and are to be detected, are immobilized, electrically charged particles generated by hybridization being detectable on the at least one sensor electrode; and at least one diffusion detection electrode which is arranged in a surrounding region of the at least one sensor electrode and is embodied in such a way that it detects electrically charged particles that are generated by hybridization and can be diffused away by the at least one sensor electrode.

Abstract: A differential amplifier having a rail-to-rail input voltage range, includes a first differential input stage, which is connected to a first supply voltage rail via a first power source and a second complementary differential input stage, which is connected to the second supply voltage rail via a second power source. To this end, switching device are provided, which deactivate the first differential input stage and activate the second differential input stage when the voltage value of the input voltage signal exceeds a predetermined first voltage threshold in the event of rising input voltage, and which deactivate the second differential input stage and activate the first differential input sage when the voltage value of the input voltage signal falls below a predetermined second voltage threshold in the event of falling input voltage. A constant input slope can thus be achieved, having a high phase reserve, which makes the device particularly applicable in the field of biosensory technology.

Abstract: In a method for 3D digitization of an object (1), a plurality of camera images of the object are recorded and assembled to determine the 3D coordinates of the object. To improve such method, pictures are taken from the object (1), from which 2D feature points (11, 12, 13; 21, 22, 23) of the object (1) are determined. The 3D coordinates of the 2D feature points are determined. The 2D point correspondences (32, 32, 22) between the 2D feature points of a picture and the 2D feature points of another picture are determined. Several of these 2D point correspondences are selected, and an associated 3D transformation is determined. The quality of this 3D transformation is determined with reference to the transformed 3D coordinates of the 2D feature points. Valid 3D feature points are determined therefrom. For assembling the camera images of the object (1), the 3D coordinates of the valid 3D feature points are used.

Abstract: An arrangement and a method measures cell vitalities with a sensor array. The sensor array is formed on a surface of a semiconductor chip. The semiconductor chip has integrated circuits and an integrated circuit is associated with each sensor of the sensor array, for processing the measurement signals of the respective sensor. The integrated circuits are formed in the semiconductor chip spatially in each case below the associated sensor and neighboring sensors of the sensor array have a centre-to-centre in the range of micrometers. The pH and/or pO2 can be measured in the environment of a living cell.

Abstract: An autonomous energy generation system, in particular designed as an integrated miniaturized energy generation system based on MEMS technology, has a piezoelectric energy converter for converting mechanical energy into electrical energy, and has at least one piezoelectric element into which mechanical force (in particular deformation force) induced by a fluid flow can be coupled. The piezoelectric element is excited to vibrate mechanically. An integrated circuit (ASIC) is used for managing the energy provided by the piezoelectric energy converter.