Abstract: Independent multi-plane commands for non-volatile memory devices are described. In one example, a three-dimensional (3D) NAND memory device includes 3D NAND dies, each die including multiple planes of memory cells. The device includes input/output (I/O) circuitry to receive multiple commands from a host, each of the received commands to access one of the planes. The device includes logic (which can be implemented with, for example, an ASIC controller, firmware, or both) to queue the commands in separate queues for each of the planes based on a target plane of each of the commands. The logic issues the commands to their target planes independent of other planes' status, and tracks completion status of the commands independently for each plane.

Abstract: A memory device is designed to store data in multilevel storage cells (MLC storage cells). The memory device includes a controller that dynamically writes data to the storage cells according to a first MLC density or a second MLC density. The second density is less dense than the first density. For example, the controller can determine to use the first density when there is sufficient write bandwidth to program the storage cells at the first density. When the write throughput increases, the controller can program the same MLC storage cells at the second density instead of the first density, using the same program process and voltage.

Abstract: Various embodiments, disclosed herein, can include apparatus and methods to perform a one check failure byte (CFBYTE) scheme in programming of a memory device. In programming memory cells in which each memory cell can store multiple bits, the multiple bits being a n-tuple of bits of a set of n-tuples of bits with each n-tuple of the set associated with a level of a set of levels of threshold voltages for the memory cells. Verification of a program algorithm can be structured based on a programming algorithm that proceeds in a progressive manner by placing a threshold voltage of one level/distribution at a time. The routine of this progression can be used to perform just one failure byte check for that specific target distribution only, thus eliminating the need to check failure byte for all subsequent target distribution during every stage of program algorithm. Additional apparatus, systems, and methods are disclosed.

Abstract: Devices and techniques for NAN flash thermal alerting are disclosed herein. A NAND array operation is received at a controller of a storage device that includes a NAND array. The controller evaluates a thermal condition of the NAND array in response to receipt of the NAND array operation. The controller then communicates the thermal condition along with a result of the NAND array operation.

Abstract: A controller for a NAND memory array is presented. In embodiments, the controller may include circuitry to provide bias voltages to a NAND memory array that includes two or more decks of memory cells, and an output interface coupled to the circuitry and to wordlines (WLs) of the memory array. In embodiments, the circuitry, in a deck erase operation may: apply a first set of bias voltages via the output interface to active WLs of at least a first deck of the two or more decks of memory cells to be erased; and apply a second set of bias voltages via the output interface to active WLs of at least a second deck of the two or more decks of memory cells not to be erased, wherein the first set of bias voltages is lower than the second set of bias voltages.

Abstract: A method performed by a non volatile memory is described. The method includes receiving a first command from a controller to perform an operation. The method also includes receiving a second command from the controller to perform a read operation, where, the controller does not send a third command to suspend the operation between the first and second commands.

Abstract: A first type of command is suspended, by a controller of a non-volatile memory device, in response to determining that a second type of command is waiting for execution. The first type of command is split into a plurality of chunks based on a computed criteria. A second type of command is executed in between execution of at least two chunks of the first type of command.

Abstract: Devices and techniques for NAN flash thermal alerting are disclosed herein. A NAND array operation is received at a controller of a storage device that includes a NAND array. The controller evaluates a thermal condition of the NAND array in response to receipt of the NAND array operation. The controller then communicates the thermal condition along with a result of the NAND array operation.

Abstract: Embodiments of the present disclosure may relate to a memory controller that may include a memory interface and a logic circuitry component coupled with the memory interface. In some embodiments, the logic circuitry component is to program one or more NAND cells of a multi-level NAND memory array via the memory interface with a first set of data in a first pass, determine a first temperature of the multi-level NAND memory array in association with the first pass, determine a second temperature of the multi-level NAND memory array, determine a temperature difference between the second temperature and the first temperature, and perform one or more operations based at least in part on a result of the determination of the temperature difference. Other embodiments may be described and/or claimed.

Abstract: An apparatus comprises a controller to retrieve data from a non-volatile memory, and an error correction module operable on the controller to read a memory cell of the non-volatile memory at a first set of sense conditions comprising a multiplicity of sense conditions. The error correction module may be further operable to set a first set of bits in an encoded output, the first set of bits comprising a logical state bit to indicate a logical state of the memory cell and one or more additional bits in the encoded output to indicate accuracy of the logical state bit based upon results of the read at the first set of sense conditions, the first set of sense conditions comprising a greater number than that of the first set of bits.

Abstract: In one embodiment, a nonvolatile memory of a component such as a storage drive preserves write data in the event of a write data programming failure in the memory. Write data is preserved in the event of cached writes by data preservation logic in registers and data recovery logic recovers the preserved data and outputs the recovered data from the storage drive. Other aspects are described herein.

Abstract: In one embodiment, an apparatus comprises a memory array and a controller. The controller is to receive a first read command specifying a read voltage offset profile identifier; identify a read voltage offset profile associated with the read voltage offset profile identifier, the read voltage offset profile comprising at least one read voltage offset; and perform a first read operation specified by the first read command using at least one read voltage adjusted according to the at least one read voltage offset of the read voltage offset profile.

Abstract: A determination is made that data has to be moved internally within a non-volatile memory from a plurality of pages of a first type of storage media to a page of a second type of storage media. A first subset of the plurality of pages is copied from the first type of storage media to the page of the second type of storage media. Concurrently with the copying of the first subset of the plurality of pages, a second subset of the plurality of pages is copied from the first type of storage media to the page of the second type of storage media. In response to completion of the copying of the first subset and the second subset of the plurality of pages, it is determined that the copying of the data from the first type of storage media to the second type of storage media has completed.

Abstract: In one embodiment, an apparatus comprises a memory array and a controller. The controller is to receive a first read command specifying a read voltage offset profile identifier; identify a read voltage offset profile associated with the read voltage offset profile identifier, the read voltage offset profile comprising at least one read voltage offset; and perform a first read operation specified by the first read command using at least one read voltage adjusted according to the at least one read voltage offset of the read voltage offset profile.

Abstract: In one embodiment, a nonvolatile memory of a component such as a storage drive preserves write data in the event of a write data programming failure in the memory. Write data is preserved in the event of cached writes by data preservation logic in registers and data recovery logic recovers the preserved data and outputs the recovered data from the storage drive. Other aspects are described herein.

Abstract: Provided are techniques for resuming storage die programming after power loss. In response to receipt of an indication of the power loss, data that was to be programmed to multi-level cell NAND blocks are copied to single level cell NAND blocks and a pulse number at which programming was interrupted is stored. In response to receipt of an indication to resume from the power loss, the data is copied from the single level cell NAND blocks to a page buffer, the pulse number is retrieved, and programming of the multi-level cell NAND blocks is resumed at the retrieved pulse number using the data in the page buffer.

Abstract: Various embodiments, disclosed herein, can include apparatus and methods to perform a one check failure byte (CFBYTE) scheme in programming of a memory device. In programming memory cells in which each memory cell can store multiple bits, the multiple bits being a n-tuple of bits of a set of n-tuples of bits with each n-tuple of the set associated with a level of a set of levels of threshold voltages for the memory cells. Verification of a program algorithm can be structured based on a programming algorithm that proceeds in a progressive manner by placing a threshold voltage of one level/distribution at a time. The routine of this progression can be used to perform just one failure byte check for that specific target distribution only, thus eliminating the need to check failure byte for all subsequent target distribution during every stage of program algorithm. Additional apparatus, systems, and methods are disclosed.

Abstract: Embodiments include apparatuses, methods, and computer devices including a multi-level NAND memory array and a memory controller coupled to the multi-level NAND memory array. The multi-level NAND memory array may include a first word line and a second word line. The memory controller may receive a first page of data and a second page of data together with a program command to program the first page of data and the second page of data into the multi-level NAND memory array. The memory controller may program the first page of data into a page of the first word line via a first pass, and further program the second page of data into a page of the second word line via a second pass, subsequent to the first pass. Other embodiments may also be described and claimed.

Abstract: Provided are techniques for resuming storage die programming after power loss. In response to receipt of an indication of the power loss, data that was to be programmed to multi-level cell NAND blocks are copied to single level cell NAND blocks and a pulse number at which programming was interrupted is stored. In response to receipt of an indication to resume from the power loss, the data is copied from the single level cell NAND blocks to a page buffer, the pulse number is retrieved, and programming of the multi-level cell NAND blocks is resumed at the retrieved pulse number using the data in the page buffer.

Abstract: In one embodiment, an apparatus comprises a storage device comprising a NAND flash memory device comprising a plurality of NAND flash memory units. The storage device is to determine that the NAND flash memory device did not pass an initialization procedure; identify a first addressing scheme that is implemented by one or more of the NAND flash memory units that initialized properly; and after the initialization procedure, instruct each of the plurality of NAND flash memory units to implement the first addressing scheme.