Abstract: A semiconductor memory system includes a first semiconductor memory die and a second semiconductor memory die. The first semiconductor memory die includes a primary data interface to receive an input data stream during write operations and to deserialize the input data stream into a first plurality of data streams, and also includes a secondary data interface, coupled to the primary data interface, to transmit the first plurality of data streams. The second semiconductor memory die includes a secondary data interface, coupled to the secondary data interface of the first semiconductor memory die, to receive the first plurality of data streams.

Abstract: A method for compensating for transistor aging in a display device is presented. The method entails dividing pixels into a plurality of groups including a first group, the first group including Z pixels wherein Z>1, sampling a pixel current for each pixel in a subset of pixels in the first group, the subset including M pixels wherein 1?M?Z, determining an ErrorM using the sampled pixel current for the M pixels and a predefined reference current, and adjusting an input voltage for a transistor in more than one of the Z pixels based on the ErrorM. The adjusting of the input voltage may include generating a modified voltage Vd, wherein Vd=A*Vin+B, and each of A and B is determined using ?M sign(Errorm).

Abstract: A clock recovery circuit may include: a data slicer configured to output data values based on an input signal, a first error block, a phase adjustment loop including: a first error slicer configured to generate a first error signal based on a comparison of a threshold voltage and an input voltage, wherein the first error block is configured to selectively output the first error signal in response to a first pattern in the output data values, a second error block configured to selectively output the first error signal in response to a second pattern in the output data values, and a voltage threshold modification circuitry configured to adjust the threshold voltage based on output of the second error block, a voltage-controlled oscillator, wherein the data slicer and the first error slicer are clocked based on output of the voltage-controlled oscillator.

Abstract: A receiver for a serial data link, including an analog front end (AFE) including a continuous-time linear equalizer (CTLE) configured to receive an input signal from a transmitter, the CTLE including a first output node; a second output node; a plurality of programmable tail current sources configured to adjust a direct current (DC) offset between the first output node and the second output node; and a calibration circuit including: a slicer configured to output a difference between a first average output voltage corresponding to the first output node and a second average output, voltage corresponding to the second output node; and a calibration counter configured to increment or decrement an offset count based on the difference, wherein the plurality of programmable tail current sources are adjusted based on a value of the offset count.

Abstract: A memory module comprises a data interface including a plurality of data lines and a plurality of configurable switches coupled between the data interface and a data path to one or more memories. The effective width of the memory module can be configured by enabling or disabling different subsets of the configurable switches. The configurable switches may be controlled by manual switches, by a buffer on the memory module, by an external memory controller, or by the memories on the memory module.

Abstract: A receiver for a serial data link, including an analog front end (AFE) including a continuous-time linear equalizer (CTLE) configured to receive an input signal from a transmitter, the CTLE including a first output node; a second output node; a plurality of programmable tail current sources configured to adjust a direct current (DC) offset between the first output node and the second output node; and a calibration circuit including: a slicer configured to output a difference between a first average output voltage corresponding to the first output node and a second average output, voltage corresponding to the second output node; and a calibration counter configured to increment or decrement an offset count based on the difference, wherein the plurality of programmable tail current sources are adjusted based on a value of the offset count.

Abstract: A method for encoding may include receiving, at an encoder, a series of data bits, performing, at the encoder, first transition encoding on the data bits to generate an encoded series of data bits based on a key, performing, at the encoder, protection encoding on the key to generate key protection data, performing, at the encoder, second transition encoding on the key protection data to generate encoded key protection data, and transmitting an encoded series of transmission bits to a receiver, the encoded series of transmission bits including the encoded series of data bits and the encoded key protection data.

Abstract: A memory module comprises a data interface including a plurality of data lines and a plurality of configurable switches coupled between the data interface and a data path to one or more memories. The effective width of the memory module can be configured by enabling or disabling different subsets of the configurable switches. The configurable switches may be controlled by manual switches, by a buffer on the memory module, by an external memory controller, or by the memories on the memory module.

Abstract: A method for encoding may include receiving, at an encoder, a series of data bits, performing, at the encoder, first transition encoding on the data bits to generate an encoded series of data bits based on a key, performing, at the encoder, protection encoding on the key to generate key protection data, performing, at the encoder, second transition encoding on the key protection data to generate encoded key protection data, and transmitting an encoded series of transmission bits to a receiver, the encoded series of transmission bits including the encoded series of data bits and the encoded key protection data.

Abstract: A semiconductor memory system includes a first semiconductor memory die and a second semiconductor memory die. The first semiconductor memory die includes a primary data interface to receive an input data stream during write operations and to deserialize the input data stream into a first plurality of data streams, and also includes a secondary data interface, coupled to the primary data interface, to transmit the first plurality of data streams. The second semiconductor memory die includes a secondary data interface, coupled to the secondary data interface of the first semiconductor memory die, to receive the first plurality of data streams.

Abstract: A method of encoding input data includes dividing the input data into a plurality of data packets, an input packet of the plurality of data packets including a plurality of digits in a first base system, base-converting the input packet from the first base system to generate a base-converted packet including a plurality of converted digits in a second base system, the second base system having a base value lower than that of the first base system, and incrementing the converted digits to generate a coded packet for transmission through a communication channel.

Abstract: A clock recovery circuit may include: a data slicer configured to output data values based on an input signal, a first error block, a phase adjustment loop including: a first error slicer configured to generate a first error signal based on a comparison of a threshold voltage and an input voltage, wherein the first error block is configured to selectively output the first error signal in response to a first pattern in the output data values, a second error block configured to selectively output the first error signal in response to a second pattern in the output data values, and a voltage threshold modification circuitry configured to adjust the threshold voltage based on output of the second error block, a voltage-controlled oscillator, wherein the data slicer and the first error slicer are clocked based on output of the voltage-controlled oscillator.

Abstract: A method of compensating for change in pixel and a display device incorporating such method are presented. The method includes dividing pixels into groups including a previous group L?1, a current group L and a next group L+1; determining Aconverged[L] and Bconverged[L] for each pixel in the current group L; for each pixel in the current group L, determining a first moving average Amean[L] and a second moving average Bmean[L] as follows: A mean [ L ] = A ? mean [ L - 1 ] ? ( K - 1 ) + A [ L ] K , B mean [ L ] = B ? mean [ L - 1 ] ? ( K - 1 ) + B [ L ] K , wherein Amean[L?1] is a first moving average of a pixel in the corresponding column in the previous group L?1, Bmean[L?1] is a second moving average of a pixel in the corresponding column in the previous group L?1, and K is a moving average window; and for the next group L+1, setting a first initial value A0[L+1] and a second initial value A0[L+1] of each pixel to Amean[L] and Bmean[L].

Abstract: A system includes a first encoder configured to receive first input bits and generate a first stream of first bits based on the first input bits, a bit generator configured to receive second inputs bits and generate a second stream of second bits based on the second input bits, and a PAM4 transmitter configured to receive the first stream of first bits and the second stream of second bits, and generate PAM4 symbols based at least on the first stream of first bits.

Abstract: A method of encoding input data includes dividing the input data into a plurality of data packets, an input packet of the plurality of data packets including a plurality of digits in a first base system, base-converting the input packet from the first base system to generate a base-converted packet including a plurality of converted digits in a second base system, the second base system having a base value lower than that of the first base system, and incrementing the converted digits to generate a coded packet for transmission through a communication channel.

Abstract: A method for encoding may include receiving, at an encoder, a series of data bits, performing, at the encoder, first transition encoding on the data bits to generate an encoded series of data bits based on a key, performing, at the encoder, protection encoding on the key to generate key protection data, performing, at the encoder, second transition encoding on the key protection data to generate encoded key protection data, and transmitting an encoded series of transmission bits to a receiver, the encoded series of transmission bits including the encoded series of data bits and the encoded key protection data.

Abstract: A clock recovery circuit may include: a data slicer configured to output data values based on an input signal, a first error block, a phase adjustment loop including: a first error slicer configured to generate a first error signal based on a comparison of a threshold voltage and an input voltage, wherein the first error block is configured to selectively output the first error signal in response to a first pattern in the output data values, a second error block configured to selectively output the first error signal in response to a second pattern in the output data values, and a voltage threshold modification circuitry configured to adjust the threshold voltage based on output of the second error block, a voltage-controlled oscillator, wherein the data slicer and the first error slicer are clocked based on output of the voltage-controlled oscillator.

Abstract: A memory module comprises a data interface including a plurality of data lines and a plurality of configurable switches coupled between the data interface and a data path to one or more memories. The effective width of the memory module can be configured by enabling or disabling different subsets of the configurable switches. The configurable switches may be controlled by manual switches, by a buffer on the memory module, by an external memory controller, or by the memories on the memory module.

Abstract: Embodiments generally relate to a memory device. In one embodiment, the memory device includes a clock receiver circuit that receives an external clock signal and provides an internal clock signal. The memory device also includes a delay-locked loop circuit (DLL) having an input, and a circuit that receives the internal clock signal. The circuit selects which pulses of the internal clock signal are applied to the input of the DLL, such that no more than two clock pulses selected from at least three consecutive pulses of the external clock signal are applied to the input of the DLL during a predetermined interval.

Abstract: A semiconductor memory system includes a first semiconductor memory die and a second semiconductor memory die. The first semiconductor memory die includes a primary data interface to receive an input data stream during write operations and to deserialize the input data stream into a first plurality of data streams, and also includes a secondary data interface, coupled to the primary data interface, to transmit the first plurality of data streams. The second semiconductor memory die includes a secondary data interface, coupled to the secondary data interface of the first semiconductor memory die, to receive the first plurality of data streams.