Abstract: A continuous reflection curved mirror structure is applied to a vertical light-emitting diode (LED) which includes a P-type electrode, a permanent substrate, a binding layer, a buffer layer, a mirror layer, a P-type semiconductor layer, a light-emitting layer, an N-type semiconductor layer and an N-type electrode that are stacked in sequence. Between the P-type semiconductor layer and the mirror layer is a filler. The filler is located right below the N-type electrode to form a protruding continuous curved surface facing the light-emitting layer. The mirror layer forms a mirror structure along the protruding continuous curved surface. With reflection provided by the mirror structure, excited light from the light-emitting layer is reflected towards two sides, so that the excited light can dodge the N-type electrode without being shielded to increase light extraction efficiency.

Abstract: A semiconductor light-emitting device is provided. The semiconductor light-emitting device includes a buffer layer, a light-emitting layer, a first-conductivity semiconductor layer, a first light reflecting layer, a protective structure, and an adhesive layer. The first-conductivity semiconductor layer is disposed between the buffer layer and a first side of the light-emitting layer. The first light reflecting layer is disposed between the first-conductivity semiconductor layer and the buffer layer. The protective structure is disposed between the first reflecting layer and the buffer layer. The adhesive layer is disposed between the first-conductivity semiconductor layer and the protective structure.

Abstract: An electrode structure for an LED includes a plurality of blind holes and a plurality of N-type metal electrodes. The LED comprises, in this order by stacking, an intrinsic semiconductor layer, an N-type semiconductor layer, a light emitting layer, a P-type semiconductor layer, a mirror layer, a buffer layer, a bonding layer, a permanent substrate and a P-type electrode. The blind holes are distributed in a pattern and run through the intrinsic semiconductor layer to reach the N-type semiconductor layer. The N-type metal electrodes respectively run through the blind holes to connect the N-type semiconductor layer. Through a 3D contact interface formed by the blind hole, not only contact impedance between the N-type metal electrode and the N-type semiconductor layer can be reduced, the N-type metal electrode also can be firmly held in the blind hole without peeling off.

Abstract: A method for separating a light-emitting diode (LED) from a substrate comprises the following steps. First, a substrate is provided which includes a junction surface and a bottom surface far away from the junction surface. Then a plurality holes are formed on the junction surface. An LED structure is further grown on the junction surface, and includes a junction portion bonded to the junction surface. The bottom surface is then polished to be shrunk to communicate with the holes. Finally, the junction portion is etched by an etching liquid via the holes to separate the LED structure from the substrate. Accordingly, by forming the holes, the LED structure and the substrate can be separated through polishing and etching processes, thereby providing a high yield rate as well as reduced production costs.

Abstract: A semiconductor light-emitting device comprises a light-emitting epitaxial structure, a first electrode structure, a light reflective layer and an resistivity-enhancing structure. The light-emitting epitaxial structure has a first surface and a second surface opposite to the first surface. The first electrode structure is electrically connected to the first surface. The light reflective layer is disposed adjacent to the second surface. The resistivity-enhancing structure is disposed adjacent to the light reflective layer and away from the second surface corresponding to a position of the first electrode structure.

Abstract: A light-emitting diode (LED) with a mirror protection layer includes sequentially stacked an N-type electrode, an N-type semiconductor layer, a light-emitting layer, a P-type semiconductor layer, a metal mirror layer, a protection layer, a buffer layer, a binding layer, a permanent substrate, and a P-type electrode. The protection layer is made of metal oxide, and has a hollow frame for covering or supporting edges of the metal mirror layer. Accordingly, the metal mirror layer can be protected by the protection layer to prevent from oxidation in subsequent processes and to prevent metal deterioration during high-current operations. Thus the metal mirror layer can maintain high reflectivity, thereby increasing light extraction efficiency and electrical stability of the LED.

Abstract: A low contact resistance semiconductor structure includes a substrate, a semiconductor stacked layer, a low contact resistance layer and a transparent conductive layer. The low contact resistance layer is formed on one side of a P-type GaN layer of the semiconductor stacked layer. The low contact resistance layer is formed at a thickness smaller than 100 Angstroms and made of a material selected from the group consisting of aluminum, gallium, indium, and combinations thereof. Through the low contact resistance layer, the resistance between the P-type GaN layer and transparent conductive layer can be reduced and light emission efficiency can be improved when being used on LEDs. The method of fabricating the low contact resistance semiconductor structure of the invention forms a thin and consistent low contact resistance layer through a Metal Organic Chemical Vapor Deposition (MOCVD) method to enhance matching degree among various layers.

Abstract: A buffer layer structure for an LED is provided. The LED includes a P-type electrode, a permanent substrate, a binding layer, a buffer layer, a mirror layer, a P-type semiconductor layer, a light-emitting layer, an N-type semiconductor layer, and an N-type electrode that are stacked in sequence. The buffer layer is a composite material, and includes at least one first material and at least one second material that are alternately stacked. The first material and the second material are mutually diffused to generate gradient variation after the buffer layer is processed by a thermal treatment. Thus, an interface effect and thermal stress between difference interfaces are eliminated, and a channel for ion diffusion is blocked for enhancing light-emitting efficiency of the LED.

Abstract: A light-emitting diode (LED) electrode contact structure for an LED is provided. The LED includes a plurality of N-type electrodes, an N-type semiconductor layer, a light-emitting layer, a P-type semiconductor layer, a mirror layer, a buffer layer, a binding layer, a permanent substrate and a P-type electrode that are stacked in sequence. The N-type semiconductor layer has an irregular surface and a plurality of contact platforms. The contact platforms are formed and distributed on the N-type semiconductor layer in a patterned arrangement, and the irregular surface is formed at areas on the N-type semiconductor layer without the contact platforms. The N-type electrodes are respectively formed on the contact platforms. Through flat interfaces provided by the contact platforms, voids are not generated when the N-type electrodes are formed on the contact platforms. Therefore, satisfactory electrical contact is ensured to thereby increase light emitting efficiency.

Abstract: An LED electrode contact structure for an LED is provided. The LED includes a plurality of N-type electrodes, an N-type semiconductor layer, a light-emitting layer, a P-type semiconductor layer, a mirror layer, a buffer layer, a binding layer, a permanent substrate and a P-type electrode that are stacked in sequence. The N-type semiconductor layer has an irregular surface and a plurality of contact platforms. The contact platforms are formed and distributed on the N-type semiconductor layer in a patterned arrangement, and the irregular surface is formed at areas on the N-type semiconductor layer without the contact platforms. The N-type electrodes are respectively formed on the contact platforms. The contact platforms have roughness between 0.01 ?m and 0.1 ?m, such that not only voids are not generated but also good adhesion is provided to prevent carrier confinement and disengagement. Therefore, satisfactory electrical contact is ensured to thereby increase light emitting efficiency.

Abstract: A continuous reflection curved mirror structure is applied to a vertical light-emitting diode (LED) which includes a P-type electrode, a permanent substrate, a binding layer, a buffer layer, a mirror layer, a P-type semiconductor layer, a light-emitting layer, an N-type semiconductor layer and an N-type electrode that are stacked in sequence. Between the P-type semiconductor layer and the mirror layer is a filler. The filler is located right below the N-type electrode to form a protruding continuous curved surface facing the light-emitting layer. The mirror layer forms a mirror structure along the protruding continuous curved surface. With reflection provided by the mirror structure, excited light from the light-emitting layer is reflected towards two sides, so that the excited light can dodge the N-type electrode without being shielded to increase light extraction efficiency.

Abstract: A reflection curved mirror structure is applied to a vertical light-emitting diode (LED) which includes a P-type electrode, a permanent substrate, a binding layer, a buffer layer, a mirror layer, a P-type semiconductor layer, a light-emitting layer, an N-type semiconductor layer and an N-type electrode that are stacked in sequence. Between the P-type semiconductor layer and the mirror layer is a filler. The filler is located right below the N-type electrode to form a protruding curved surface facing the light-emitting layer. The mirror layer forms a mirror structure along the protruding curved surface. With reflection provided by the mirror structure, excited light from the light-emitting layer is reflected towards two sides, so that the excited light can dodge the N-type electrode without being shielded to increase light extraction efficiency.

Abstract: A tension release layer structure is applied to an LED which includes a P-type electrode, a permanent substrate, a binding layer, a tension release layer, a mirror layer, a P-type semiconductor layer, a light-emitting layer, an N-type semiconductor layer and an N-type electrode that are stacked in sequence. The tension release layer is made of a complex material including at least two material elements with boundaries that are blended with each other. As the complex material in the tension release layer does not have apparent interface separation, stress between interface effect and materials can be eliminated to increase light-emitting efficiency and production yield of the LED.

Abstract: An electric contact structure adopted for an LED comprises a nitride middle layer and an N-type metal electrode layer. The LED includes an N-type semiconductor layer, a light emission layer and a P-type semiconductor layer that are stacked to form a sandwich structure. The nitride middle layer is patterned and formed on the N-type semiconductor layer. The N-type metal electrode layer is formed on the nitride middle layer and prevented from being damaged by diffusion of the metal ions as the nitride middle layer serves as a blocking interface, thus electric property of the N-type semiconductor layer can be maintained stable. The nitride middle layer would not be softened and condensed due to long-term high temperature, thereby is enhanced adhesion. Moreover, the N-type metal electrode layer further can be prevented from peeling off, hence is increased the lifespan of the LED.

Abstract: A thermal stress releasing structure is applied to a light-emitting diode (LED) which includes a P-type electrode, a permanent substrate, a binding layer, a buffer layer, a mirror layer, a P-type semiconductor layer, a light-emitting layer, an N-type semiconductor layer, and an N-type electrode that are stacked in sequence. The buffer layer includes a plurality of first material layers and a plurality of second material layers. The first material layers and the second material layers are alternately stacked in a staggered manner to form a concave-convex structure in a stacking direction of the first and second material layers. The concave-convex structure is formed in a corrugated shape to function as the thermal stress releasing structure, thus is capable of releasing thermal stress generated by thermal expansion and contraction of the buffer layer in the LED to prevent the buffer layer from damaging a metal layer or an epitaxy layer.

Abstract: A reflection convex mirror structure is applied to a vertical light-emitting diode (LED) which comprises a P-type electrode, a permanent substrate, a binding layer, a buffer layer, a mirror layer, a P-type semiconductor layer, a light-emitting layer, an N-type semiconductor layer and an N-type electrode that are stacked in sequence. Between the P-type semiconductor layer and the mirror layer, a filler and a mirror are disposed right below the N-type electrode. The filler is made of a transparent material and has a convex surface facing the light-emitting layer. The mirror is formed on the convex surface of the filler. By utilizing the filler and the mirror to form the reflection convex mirror structure, excited light is reflected towards two sides, so that the excited light can dodge the N-type electrode without being shielded to increase light extraction efficiency.

Abstract: An LED with a current diffusion structure comprises an N-type semiconductor layer, a light emitting layer, a P-type semiconductor layer, an N-type electrode, a P-type electrode and a current blocking layer. The N-type semiconductor layer, light emitting layer and P-type semiconductor layer form a sandwich structure. The N-type and P-type electrodes are respectively arranged on the N-type and P-type semiconductor layers. The current blocking layer has the pattern of the N-type electrode and is embedded inside the N-type semiconductor layer. Thereby not only current generated by the N-type electrode detours the current blocking layer and uniformly passes through the light emitting layer, but also prevents interface effect to increase impedance. Thus is promoted lighting efficiency of LED. Further, as main light-emitting regions of the light emitting layer are far from the N-type electrode, light shielded by the N-type electrode is reduced and illumination of LED is thus enhanced.

Abstract: A combustor applied in thermophotovoltaic system comprises a combustion device and a reversed tube covering the combustion device. The combustion device includes a combustion body made of a transparent, and temperature resistant material and a burning unit disposed in the combustion body. When a burning-supported medium is adopted during burning via the burning unit, the radiant intensity is increased. The reversed tube thence further redirects the hot product gas for reheating an outer wail of the combustion body in combustion. Therefore, uniform illumination is accordingly resulted for enhancing the radiant intensity. Accordingly, a photovoltaic cell plate connected to the combustor preferably transforms light into electricity. The present invention fully utilizes a micro system as well as miniature energy to offer advanced electricity.

Abstract: A combustor for thermaophotovoltaic power systems includes a chamber body pervious to light and a metal porous medium as well as an emitter tube disposed inside the chamber body, respectively. By using a mixed liquid fuel to penetrate through the porous medium to form a fuel-film on the surface thereof and injecting the air into the chamber body, the contact surface of the fuel and the air is increased for promoting the thermal conduction and thoroughly vaporizing the liquid fuel to attain the flame stabilization. Further, the material of metal carbonyl can be added into the liquid fuel to efficiently increase the intensity of the flame luminescence after the burning reaction, and the radiation of the emitter tube combines with the radiation of the flame luminescence to increase the luminosity and enhance the electricity conversion efficiency.