Abstract: A bitstream that stores encoded image data is described. In addition to the compressed data for color planes of the image, signals identifying respective deblocking filters is identified for the different color planes of the image. The deblocking filters may include those having different lengths for a luma plane as compared to one or more chroma planes of the image. One or more of the color planes, such as the luma plane, may have different filters for filtering reconstructed pixels vertically as compared to filtering the reconstructed pixels horizontally.

Abstract: A multi-channel payment method for a multi-channel payment system comprises the payer or the payee who initiated the payment request logs in to the multi-channel payment system; the payer or the payee who initiated the payment request placing an order in the multi-channel payment system, wherein the order comprises a designated payment gateway; the multi-channel payment system determining a predicted fee of the order according to the designated payment gateway, past order records, and a real-time exchange rate; the multi-channel payment system performing an anti-money laundering verification of the order; the payer reviewing the order and the predicted fee through a multiple auditing method; and the multi-channel payment system executing payment from the payer to the payee according to the order and the designated payment gateway, and storing a payment detail of the order.

Abstract: Disclosed are an interactive information processing method, an electronic device and a storage medium. The method includes establishing a correspondence between a multimedia data stream and a display text generated based on the multimedia data stream; presenting the multimedia data stream and the display text based on the correspondence; and in response to detecting a triggering operation triggering a display content in the display text, adjusting, based on a timestamp corresponding to the display content and the correspondence, the multimedia data stream to navigate to a playback position corresponding to the display content; the display content comprises a text corresponding to speech in the multimedia data stream; and the display text and the multimedia data stream are displayed on different display areas of a page respectively, and a display area occupied by the display text is not superimposed on a display area occupied by the multimedia data stream.

Abstract: A semiconductor device includes channel members vertically stacked, a gate structure wrapping around the channel members, a gate spacer disposed on sidewalls of the gate structure, an epitaxial feature abutting the channel members, and an inner spacer layer interposing the gate structure and the epitaxial feature. In a top view of the semiconductor device, the inner spacer layer has side portions in physical contact with the gate spacer and a middle portion stacked between the side portions. In a lengthwise direction of the channel members, the middle portion of the inner spacer layer is thicker than the side portions of the inner spacer layer.

Abstract: A method of forming a semiconductor device includes: forming a fin protruding above a substrate; forming isolation regions on opposing sides of the fin; forming a dummy gate electrode over the fin; removing lower portions of the dummy gate electrode proximate to the isolation regions, where after removing the lower portions, there is a gap between the isolation regions and a lower surface of the dummy gate electrode facing the isolation regions; filling the gap with a gate fill material; after filling the gap, forming gate spacers along sidewalls of the dummy gate electrode and along sidewalls of the gate fill material; and replacing the dummy gate electrode and the gate fill material with a metal

Abstract: The disclosure provides a data privacy protection method, a server device, and a client device for federated learning. A public dataset is used to perform model training on a machine learning model by a server device to generate a gradient pool including multiple first gradients. The gradient pool and the machine learning model are received by a client device. The client device uses a local dataset to perform model training on the machine learning model to obtain a second gradient. A local gradient is selected from the first gradients in the gradient pool according to the second gradient using a differential privacy algorithm by the client device. An aggregated machine learning model is generated by performing model aggregation based on the local gradient by the server device.

Abstract: A display substrate comprises a base substrate that comprises a first display area provided with multiple sub-pixels of different colors. At least one sub-pixel comprises a light-emitting element and a pixel driving circuit for driving the light-emitting element to emit light. The light-emitting element comprises a first electrode, a second electrode, and an organic light-emitting layer provided between the first electrode and the second electrode. The first electrode is a reflective electrode and is electrically connected to the pixel driving circuit. A first structure is provided on a side of the first electrode of the light-emitting element of a sub-pixel of at least one target color close to the base substrate, and a surface of the first structure close to the first electrode is uneven.

Abstract: A semiconductor device structure, along with methods of forming such, are described. The structure includes a plurality of semiconductor layers having a first group of semiconductor layers, a second group of semiconductor layers disposed over and aligned with the first group of semiconductor layers, and a third group of semiconductor layers disposed over and aligned with the second group of semiconductor layers. The structure further includes a first source/drain epitaxial feature in contact with a first number of semiconductor layers of the first group of semiconductor layers and a second source/drain epitaxial feature in contact with a second number of semiconductor layers of the third group of semiconductor layers. The first number of semiconductor layers of the first group of semiconductor layers is different from the second number of semiconductor layers of the third group of semiconductor layers.

Abstract: An integrated circuit (IC) device includes a master latch circuit having a first clock input and a data output, a slave latch circuit having a second clock input and a data input electrically coupled to the data output of the master latch circuit, and a clock circuit. The clock circuit is electrically coupled to the first clock input by a first electrical connection configured to have a first time delay between the clock circuit and the first clock input. The clock circuit is electrically coupled to the second clock input by a second electrical connection configured to have a second time delay between the clock circuit and the second clock input. The first time delay is longer than the second time delay.

Abstract: In an embodiment, a method includes: placing a wafer on an implanter platen, the wafer including alignment marks; measuring a position of the wafer by measuring positions of the alignment marks with one or more cameras; determining an angular displacement between the position of the wafer and a reference position of the wafer; and rotating the implanter platen by the angular displacement.

Abstract: A layer stack including a first bonding dielectric material layer, a dielectric metal oxide layer, and a second bonding dielectric material layer is formed over a top surface of a substrate including a substrate semiconductor layer. A conductive material layer is formed by depositing a conductive material over the second bonding dielectric material layer. The substrate semiconductor layer is thinned by removing portions of the substrate semiconductor layer that are distal from the layer stack, whereby a remaining portion of the substrate semiconductor layer includes a top semiconductor layer. A semiconductor device may be formed on the top semiconductor layer.

Abstract: Methods for forming via last through-vias. A method includes providing an active device wafer having a front side including conductive interconnect material disposed in dielectric layers and having an opposing back side; providing a carrier wafer having through vias filled with an oxide extending from a first surface of the carrier wafer to a second surface of the carrier wafer; bonding the front side of the active device wafer to the second surface of the carrier wafer; etching the oxide in the through vias in the carrier wafer to form through oxide vias; and depositing conductor material into the through oxide vias to form conductors that extend to the active carrier wafer and make electrical contact to the conductive interconnect material. An apparatus includes a carrier wafer with through oxide vias extending through the carrier wafer to an active device wafer bonded to the carrier wafer.

Abstract: An optical photographing lens assembly includes seven lens elements which are, in order from an object side to an image side: a first lens element, a second lens element, a third lens element, a fourth lens element, a fifth lens element, a sixth lens element and a seventh lens element. Each of the seven lens elements of the optical photographing lens assembly has an object-side surface facing toward the object side and an image-side surface facing toward the image side. The object-side surface of the first lens element is concave in a paraxial region thereof. The object-side surface of the first lens element is aspheric and has at least one critical point in an off-axis region thereof.

Abstract: A semiconductor structure is provided. The semiconductor structure includes a substrate containing a first active region in a first region of the substrate and a second active region in a second region of the substrate, a plurality of first gate structures over the first active region each including a first gate stack having a first high-k gate dielectric and a first gate electrode and first gate spacers surrounding the first gate stack, and a plurality of second gate structures over the second active region each including a second gate stack having a second high-k gate dielectric and a second gate electrode and second gate spacers surrounding the second gate stack. At least a portion of the second gate electrode comprises dopants.

Abstract: A biological particle enrichment apparatus and a pico-droplet generator thereof are provided. The pico-droplet generator includes a container, a hollow needle connected to the container, a first piezoelectric member disposed on the container, and a second piezoelectric member disposed on the hollow needle. The container can receive a liquid specimen having biological particles. The hollow needle and the container are fluid communicated with each other, and an inner diameter of the container is within a range from 5 times to 30 times of an inner diameter of the hollow needle. The first piezoelectric member is annularly disposed on a surrounding lateral side of the container, and enables the biological particles in the container to move along a direction away from the surrounding lateral side by vibrating the container. The second piezoelectric member can squeeze the hollow needle, so that the liquid specimen flows outwardly to form a pico-droplet.

Abstract: The present disclosure provides an electric television bracket, which includes a fix seat; an installation rack, configured to install a television; a connector, where one end thereof is fixed to the fix seat and the other end thereof is connected to the installation rack through a first pivot; a connection mechanism, where one end thereof is connected to the installation rack through a second pivot and the other end thereof is connected to the fix seat through a third pivot; and a drive unit, where a first end thereof is rotatably connected to the installation rack and a second end thereof is rotatably connected to the fix seat; and a distance between the first pivot and the second pivot is at least one-third of a length of the installation rack.

Abstract: A semiconductor chip includes a first intellectual property block. There are a second intellectual property block and a third intellectual property block around the first intellectual property block. There is a multiple metal layer stack over the first intellectual property block, the second intellectual property block, and the third intellectual property block. An interconnect structure is situated in the upper portion of the multiple metal layer stack. The interconnect structure is configured for connecting the first intellectual property block and the second intellectual property block. In addition, at least a part of the interconnect structure extends across and over the third intellectual property block.

Abstract: A biological particle analysis method is provided and includes the following steps: fluorescence staining a liquid specimen through a fluorescence staining process so as to enable a target biological particle in the liquid specimen to becomes a fluorescence; accommodating the liquid specimen into a pico-droplet generator and using a camera device to take a real-time image of the liquid specimen; using the pico-droplet generator to output a target pico-droplet having the target biological particle onto a biochip according to the real-time image; removing the fluorescent color of the target biological particle in the target pico-droplet through a washing process; and fluorescence staining the target biological particle captured by the biochip at multiple times through the fluorescence staining process and the washing process, so as to obtain a plurality of fluorescence images respectively corresponding to multiple kinds of biological characterization expressions.

Abstract: A power measurement circuit, a chip and a communication terminal. The power measurement circuit comprises a power measurement unit (100), a reference current generation unit (200), a voltage-current conversion unit (300) and an operation output unit (400), wherein an output end of the power measurement unit (100) is connected to an input end of the voltage-current conversion unit (300), and an output end of the voltage-current conversion unit (300) and an output end of the reference current generation unit (200) are respectively connected to an input end of the operation output unit (400). By means of the circuit, during the process of a power measurement unit (100) converting, into a direct-current voltage, a received radio frequency signal to be measured, sensitivity adjustment is performed, such that the measurement sensitivity can be effectively adjusted.

Abstract: Disclosed are a material analysis method based on the crystal structure database, a system, a computer-readable storage medium and an application. The material analysis method includes comparing experimental pattern information obtained from examination of a to-be-tested sample with theoretical pattern information calculated from material structure data in the crystal structure database, and obtaining crystallographic information and phase composition of the to-be-tested sample through intelligent analysis. The crystallographic information include space group, unit cell parameter, and specific coordinates of atoms in unit cell. The crystal structure database has material structure data obtained by experimental measurement and/or theoretical prediction, including chemical formula, space group, unit cell parameter and specific coordinates of atoms in unit cell.