Abstract: A method is provided for processing wastewater having organics even together with high-concentration ammonia-nitrogen, using an apparatus, comprising a catalyzation tank and a subsequent neutralization tank. Organic ammonia-nitrogen wastewater is introduced into tank for reaction without being pre-adjusted by acidic agent or mixing with other additives. A persulfate oxidant is used to process high-efficiency oxidative degradation for ammonia-nitrogen and toxic organics in wastewater through catalyzing oxidation of ultraviolet activation, tiny-amount-transition-metal catalyzation, or both of them, for simultaneous reductions or complete removals of ammonia-nitrogen and organic carbon contents. After neutralization according to actual needs, the final output is complied with biological treatment conditions, discharged-water quality standards, or recycled-water standards.

Abstract: A connecting structure includes a substrate, a first conductive feature, a second conductive feature, a third conductive feature over the first conductive feature and a fourth conductive feature over the second conductive feature. The substrate includes a first region and a second region. The first conductive feature is disposed in the first region and has a first width. The second conductive feature is disposed in the second region and has a second width greater than the first width of the first conductive feature. The third conductive feature includes a first anchor portion surrounded by the first conductive feature. The fourth conductive feature includes a second anchor portion surrounded by the second conductive feature. A depth difference ratio between a depth of the first anchor portion and a depth of the second anchor portion is less than approximately 10%.

Abstract: A memory circuit includes a first driver circuit, a first column of memory cells coupled to the first driver circuit, a first current source, a tracking circuit configured to track a leakage current of the first column of memory cells, and a footer circuit coupled to the first column of memory cells, the first current source and the tracking circuit.

Abstract: The present disclosure provides an immunoconjugate includes an antibody comprising an antigen-binding fragment that specifically binds to an epitope in mesothelin, N-glycan binding domain and an N-glycan; a linker linking to the N-glycan; and a payload A and a payload B conjugated to the linker, respectively; wherein the payload A and the payload B are the same or different. A pharmaceutical composition comprises the immunoconjugate and a method for treating cancer are also provided in the disclosure.

Abstract: A shock absorber, including a first casing, a second casing, a frame, a vibrator, and a buffer element, is provided. The first casing includes a first pressing portion. The second casing is detachably fixed to the first casing and includes a second pressing portion. The frame includes a first portion and a second portion, and the first portion is located between the first pressing portion and the second pressing portion. The vibrator is fixed to the second portion of the frame. The buffer element is disposed between the first pressing portion and the first portion of the frame, and between the second pressing portion and the first portion of the frame. The first pressing portion and the second pressing portion press against the buffer element to sandwich the first portion of the frame. A projection device with the shock absorber is also provided.

Abstract: A semiconductor device including a substrate, a low-k dielectric layer, a cap layer, and a conductive layer is provided. The low-k dielectric layer is disposed over the substrate. The cap layer is disposed on the low-k dielectric layer, wherein a carbon atom content of the cap layer is greater than a carbon atom content of the low-k dielectric layer. The conductive layer is disposed in the cap layer and the low-k dielectric layer.

Abstract: A spectrometer is disclosed. The spectrometer includes a fiber input, a collimator lens, a rotating shaft, a grating, a focal lens and a focal plane which have arranged in order. A broadband incident light of the fiber input becomes a first parallel beam through the collimator lens and separated by the grating into multiple parallel beams of different wavelengths and then focused by the focal lens to emit an output beams to an imaging position on the focal plane. The spectrometer can rotate the collimator lens and fiber input to change the imaging position on the focal plane.

Abstract: A display panel including a first substrate, a second substrate, and a display medium layer, a pixel array structure, and a first spacer that are disposed between the first substrate and the second substrate is provided. The pixel array structure includes a first signal line, and has a first platform region located on the first signal line, a first display region and a first support region located between the first platform region and the first display region. A first platform top surface of the first platform region and the first substrate are spaced by a first distance. A support top surface of the first support region and the first substrate are spaced by a second distance. A display top surface of the first display region and the first substrate are spaced by a third distance. A terminal surface of the first spacer contacts the first platform top surface.

Abstract: A semiconductor device includes a magnetic random access memory (MRAM). The MRAM comprises a plurality of MRAM cells including a first type MRAM cell and a second type MRAM cell. Each of the plurality of MRAM cells includes a magnetic tunneling junction (MTJ) layer including a pinned magnetic layer, a tunneling barrier layer and a free magnetic layer. A size of the MTJ film stack of the first type MRAM cell is different from a size of the MTJ film stack of the second type MRAM cell. In one or more of the foregoing and following embodiments, a width of the MTJ film stack of the first type MRAM cell is different from a width of the MTJ film stack of the second type MRAM cell.

Abstract: An auxiliary power supply circuit operating within a wide input voltage range has a voltage follower unit and a voltage comparison unit. The voltage follower unit has an electronic switch, a resistor, and a Zener diode. The electronic switch has a first terminal electrically connected to a voltage input terminal of the working voltage conversion circuit, a second terminal electrically connected to a voltage output terminal of the working voltage conversion circuit, and a control terminal. The resistor is electrically connected between the first terminal and the control terminal of the electronic switch. The Zener diode has a cathode electrically connected to the control terminal of the electronic switch. The voltage comparison unit has a detecting terminal electrically connected to the voltage input terminal of the working voltage conversion circuit, and an output terminal electrically connected to the control terminal of the electronic switch.

Abstract: A memory architecture includes: a plurality of cell arrays each of which comprises a plurality of bit cells, wherein each of bit cells of the plurality of cell arrays uses a respective variable resistance dielectric layer to transition between first and second logic states; and a control logic circuit, coupled to the plurality of cell arrays, and configured to cause a first information bit to be written into respective bit cells of a pair of cell arrays as an original logic state of the first information bit and a logically complementary logic state of the first information bit, wherein the respective variable resistance dielectric layers are formed by using a same recipe of deposition equipment and have different diameters.

Abstract: A projection device, a light source system and a projection method thereof are provided. A portion of the light-emitting units are controlled to provide a light beam as the first light beam. It is detected whether characteristic parameters of the light-emitting units providing the light beam reach a preset value. When the preset value is not reached, the light-emitting units providing the light beam are disabled, and the remaining light-emitting units are controlled to provide the back-up light beam as the first light beam. A portion of the first light beam is converted into a second light beam. The first light beam of which the wavelength is not converted and the second light beam are combined to generate an illumination beam. The illumination beam is converted into an image beam. The image beam is converted into a projection beam.

Abstract: Systems, methods, architectures, and computer program products for linking multiple devices are disclosed. In an example for linking a mobile device with a desktop device, an identifier of a mobile device can be received from a desktop computer. The identifier can be used to send a link to the mobile device. When the link is accessed, a code and a channel are generated. The mobile device is connected to the channel and the code is provided to the mobile device. The code is entered at the desktop device and the desktop device is connected to the channel responsive to the code being validated, thereby linking the desktop and mobile devices.

Abstract: An interconnect structure includes an interconnect structure includes an etching stop layer; a dielectric layer and an insert layer on the etching stop layer, and a conductive feature in the dielectric layer, the insert layer and the etching stop layer. A material of the insert layer is different from the dielectric layer and the etching stop layer.

Abstract: A wavelength conversion module and a projection device are provided. The wavelength conversion module includes a rotating member and a light sensing element. The rotating member includes a shaft and a positioning structure. An excitation beam forms a first spot on the rotating member. The shaft is located at the center of the rotating member. The positioning structure is located on the rotating member. The light sensing element is disposed adjacent to the rotating member for emitting a sensing beam toward a first surface of the rotating member, wherein the sensing beam forms a second spot on the rotating member. A first connecting line is formed by connecting the first spot and the shaft, a second connecting line is formed by connecting the second spot and the shaft, and an angle between the first connecting line and the second connecting line is greater than 30 degrees.

Abstract: A memory device includes a memory array including a plurality of memory cells arranged in rows and columns. A closed loop bias generator is configured to output a column select signal to the memory array. A current limiter receives an output of the closed loop bias generator. The current limiter is coupled to a plurality of the columns of the memory array.

Abstract: The disclosed invention presents a self-tracking reference circuit that compensates for IR drops and achieves the target resistance state at different temperatures after write operations. The disclosed self-tracking reference circuit includes a replica access path, a configurable resistor network, a replica selector mini-array and a step current generator that track PVT variations to provide a PVT tracking level for RRAM verify operation.

Abstract: The present invention seeks to provide a method of analyzing medical image, the method comprises receiving a medical image; applying a model stored in a memory; analyzing the medical image based on the model; determining the medical image including a presence of fracture; and, transmitting an indication indicative of the determination.

Abstract: Embodiments described herein relate generally to methods for forming low-k dielectrics and the structures formed thereby. In some embodiments, a dielectric is formed over a semiconductor substrate. The dielectric has a k-value equal to or less than 3.9. Forming the dielectric includes using a plasma enhanced chemical vapor deposition (PECVD). The PECVD includes flowing a diethoxymethylsilane (mDEOS, C5H14O2Si) precursor gas, flowing an oxygen (O2) precursor gas; and flowing a carrier gas. A ratio of a flow rate of the mDEOS precursor gas to a flow rate of the carrier gas is less than or equal to 0.2.

Abstract: A method of forming a filament in a resistive random-access memory (RRAM) device includes applying a cell voltage across a resistive layer of the RRAM device, detecting an increase in a current through the resistive layer generated in response to the applied cell voltage, and in response to detecting the increase in the current, using a first switching device to reduce the current through the resistive layer.