Abstract: A method of manufacturing a semiconductor device includes forming a first layer of a first planarizing material over a patterned surface of a substrate, forming a second layer of a second planarizing material over the first planarizing layer, crosslinking a portion of the first planarizing material and a portion of the second planarizing material, and removing a portion of the second planarizing material that is not crosslinked. In an embodiment, the method further includes forming a third layer of a third planarizing material over the second planarizing material after removing the portion of the second planarizing material that is not crosslinked. The third planarizing material can include a bottom anti-reflective coating or a spin-on carbon, and an acid or an acid generator. The first planarizing material can include a spin-on carbon, and an acid, a thermal acid generator or a photoacid generator.

Abstract: A technique iteratively updates model weights of a teacher model and a student model. In operation, the teacher model produces noisy original pseudo-labeled training examples from unlabeled training examples. The technique weights the original pseudo-labeled training examples based on validation information. The technique then updates model weights of the student model based on the weighted pseudo-labeled training examples. The validation information, which is used to weight the original pseudo-labeled training examples, is produced by selecting labeled training examples based on an uncertainty-based factor and a similarity-based factor. The uncertainty-based factor describes an extent to which the student model produces uncertain classification results for the set of labeled training examples. The similarity-based factor describes the similarity between the set of labeled training examples and the unlabeled training examples.

Abstract: A leakage detection system is provided and includes a substrate provided between a first element and a second element, and at least one sensing unit provided on the substrate to generate an electrical signal when coming into contact with a leakage liquid. As such, warnings can be provided when coming into contact with the leakage liquid to avoid significant loss of assets.

Abstract: In a vehicle to anything environment, in order to achieve good data reception, receiving equipment and transmission equipment are preconfigured and thus include all the parameters needed for data transmission. In order to increase the probability of the data being received by the receiving equipment, the transmission equipment uses a highly robust modulation and coding scheme to code and modulate the radio signal used to broadcast the data. However, the more robust the implemented modulation and coding scheme, the lower the spectral efficiency of the radio signal used for transmission. User equipments belonging to the same broadcast group are identified by means of an identifier of the broadcast group, which allows for the implementation of a mechanism of acknowledgement by the receiving equipments making it possible to inform the transmission equipment that an error has occurred in the reception of the broadcast data.

Abstract: A semiconductor structure and method of forming the same are provided. The method includes: forming a plurality of mandrel patterns over a dielectric layer; forming a first spacer and a second spacer on sidewalls of the plurality of mandrel patterns, wherein a first width of the first spacer is larger than a second width of the second spacer; removing the plurality of mandrel patterns; patterning the dielectric layer using the first spacer and the second spacer as a patterning mask; and forming conductive lines laterally aside the dielectric layer.

Abstract: A method of forming a semiconductor structure includes first forming a metal gate (MG) over a semiconductor layer, a gate spacer on a sidewall of the MG, and a source/drain (S/D) feature disposed in the semiconductor layer and adjacent to the MG, forming an S/D contact (MD) over the S/D feature, forming a first ILD layer over the MG and the MD, and subsequently patterning the first ILD layer to form an opening. The method further includes forming a metal layer in the opening, such that the metal layer contacts both the MG and the MD, removing a top portion of the metal layer to form a trench, filling the trench with a dielectric layer, and subsequently forming a second ILD layer over the dielectric layer.

Abstract: A semiconductor package and a manufacturing method for the semiconductor package are provided. The semiconductor package includes a molded semiconductor device, a first redistribution structure, and conductive vias. The molded semiconductor device comprises a sensor die with a first surface and a second surface opposite the first surface, wherein the sensor die has an input/output region and a sensing region at the first surface. The first redistribution structure is disposed on the first surface of the sensor die, wherein the first redistribution structure covers the input/output region and exposes the sensing region, and the first redistribution structure comprises a conductive layer having a redistribution pattern and a ring structure. The redistribution pattern is electrically connected with the sensor die. The ring structure surrounds the sensing region and is separated from the redistribution pattern, wherein the ring structure is closer to the sensing region than the redistribution pattern.

Abstract: Provided herein are hydrogels that include a plurality of bacteriophages located within and covalently bonded to the hydrogel interior. The hydrogel is engineered to facilitate a controlled sustained release of the connected bacteriophages, e.g., to or within the body of a patient suffering from a bacterial infection. Also provided are methods for forming the provided hydrogels, and for using the hydrogels to treat a patient suffering from a bacterial infection.

Abstract: A light-emitting diode (LED) display device, includes: a plurality of displaying basic-units, each of the displaying basic-units having a plurality of sub-pixel regions, on which a plurality of red LED units, a plurality of green LED units, a plurality of blue LED units, and a plurality of white LED units are selectively provided; and a control unit, performing an image reconstruction process for an input image, thereby making each of the displaying basic-units display color, color grayscale, or black-and-white grayscale; wherein in each of the displaying basic-units, the quantity of green LED units is more than or equal to the quantity of white LED units, and the quantity of green LED units is more than the quantity of blue LED units or red LED units.

Abstract: A probe head includes a probe seat, and vertical probes each having a head portion including a head portion installation section with a first width, and a probe tip section including a probe tip contact part with a second width smaller than the first width and a probe tip gradually narrowing part which is located between the head portion installation section and the probe tip contact part, gradually narrows from the first width to the second width, and has a first length smaller than a second length of the probe tip contact part. The head portion installation section protrudes out of a lower surface of the probe seat for a length smaller than the sum of the first and second lengths. The vertical probe is great in current withstanding capability, structural strength and life time, and meets the requirement of probing tiny electrically conductive contacts.

Abstract: A malware family identification engine constructs a graph data structure of direct relationships between malware instances and malware families, direct relationships between malware instances and detected tags, and indirect relationships between detected tags and malware families. The engine builds a dictionary data structure comprising detected tag entries linking each detected tag to one or more malware family nodes based on the graph data structure. The engine identifies significant indirect entities (SIEs) within the detected tag entries of the dictionary data structure and selects a SIE with a highest number of out-going links (OGLs) as a root node in a family tree data structure, recursively connects SIEs with a number of OGLs less than the highest number of OGLs to the root node in the family tree data structure, and converts each SIE name in the family tree data structure to a chained family entity name in the family tree data structure.

Abstract: An integrated circuit includes a photodetector. The photodetector includes one or more dielectric structures positioned in a trench in a semiconductor substrate. The photodetector includes a photosensitive material positioned in the trench and covering the one or more dielectric structures. A dielectric layer covers the photosensitive material. The photosensitive material has an index of refraction that is greater than the indices of refraction of the dielectric structures and the dielectric layer.

Abstract: A bicycle rear derailleur includes a base component, a movable component, a linkage assembly, a chain guide and a transmission assembly. The linkage assembly is pivotably connected to the base component and the movable component. The chain guide is pivotably disposed on the movable component. The transmission assembly is disposed on the linkage assembly. The transmission assembly comprises a driving source, a circuit board and a sensor, the driving source is configured to provide a power to the movable component to drive the movable component to move relative to the base component, the circuit board is electrically connected to the driving source, the circuit board has a first surface and a second surface located opposite to each other, the sensor is disposed on the circuit board, and the first surface and the second surface pass through the sensor.

Abstract: Semiconductor device structures and method for forming the same are provided. The semiconductor device structure includes a substrate and a gate stack formed over the substrate. The semiconductor device structure further includes a source/drain structure formed adjacent to the gate stack and a contact structure vertically overlapping the source/drain structure. In addition, the contact structure has a first sidewall slopes downwardly from its top surface to its bottom surface, and an angle between the first sidewall and a bottom surface of the contact structure is smaller than 89.5°.

Abstract: A package includes a frontside redistribution layer (RDL) structure, a semiconductor die on the frontside RDL structure, and a backside RDL structure on the semiconductor die including a first RDL, and a backside connector extending from a distal side of the first RDL and including a tapered portion having a width that decreases in a direction away from the first RDL, wherein the tapered portion includes a contact surface at an end of the tapered portion. A method of forming the package may include forming the backside redistribution layer (RDL) structure, attaching a semiconductor die to the backside RDL structure, forming an encapsulation layer around the semiconductor die on the backside RDL structure, and forming a frontside RDL structure on the semiconductor die and the encapsulation layer.

Abstract: The present disclosure provides a method for manufacturing a semiconductor structure. The method includes: receiving a substrate; forming a transistor surrounded by a dielectric layer over the substrate, wherein the dielectric layer includes a through hole, and the transistor is formed in the through hole; forming a gate contact in the through hole to electrically connect the transistor; forming a ferroelectric layer over the gate contact in the through hole; forming an insulating layer conformal to and over the dielectric layer and the ferroelectric layer; removing a portion of the insulating layer to form a spacer in the through hole and over the ferroelectric layer; and forming a top electrode over the ferroelectric layer and between the spacer.

Abstract: A method for transmitting data by a device having a cell, called a second cell, conforming to a first protocol of a cellular access network and capable of transmitting in a frequency band shared with a network conforming to a second protocol and capable of implementing a listening-before-transmission (LBT) access mechanism. The method includes: using the LBT access mechanism by a first cell, and transmitting by the first cell an identification of a first sharing group, first channel sharing information and a transmission duration; using the LBT access mechanism with adaptation by the second cell to determine an interfering power separately from a received power of a transmission from the first cell; and enabling channel sharing with the first cell if the second cell belongs to the same first sharing group, the first channel sharing information authorizes the sharing and the interfering power does not exceed a given threshold.

Abstract: A method of fabricating a device includes providing a fin having an epitaxial layer stack with a plurality of semiconductor channel layers interposed by a plurality of dummy layers. In some embodiments, the method further includes exposing lateral surfaces of the plurality of semiconductor channel layers and the plurality of dummy layers within a source/drain region of the semiconductor device. In some examples, the method further includes etching the exposed lateral surfaces of the plurality of dummy layers to form recesses and forming an inner spacer within each of the recesses, where the inner spacer includes a sidewall profile having a convex shape. In some cases, and after forming the inner spacer, the method further includes performing a sheet trim process to tune the sidewall profile of the inner spacer such that the convex shape of the sidewall profile becomes a substantially vertical sidewall surface after the sheet trim process.

Abstract: The present disclosure provides a semiconductor device that includes a semiconductor fin disposed over a substrate, an isolation structure at least partially surrounding the fin, an epitaxial source/drain (S/D) feature disposed over the semiconductor fin, where an extended portion of the epitaxial S/D feature extends over the isolation structure, and a silicide layer disposed on the epitaxial S/D feature, where the silicide layer covers top, bottom, sidewall, front, and back surfaces of the extended portion of the S/D feature.

Abstract: A keyswitch structure includes a base, a keycap, a first support, a second support, and a connection structure. The keycap moves up and down relative to the base through the first support and the second support. The connection structure is disposed on the base and includes a vertical-motion limiting part and a horizontal-motion limiting part. The first support includes a rod-shaped connection portion and is connected to the connection structure through the rod-shaped connection portion. The vertical-motion limiting part prevents the rod-shaped connection portion from vertically moving. The horizontal-motion limiting part limits the horizontal movement of the rod-shaped connection portion. The vertical-motion limiting part and the horizontal-motion limiting part are separated in the rotation axis of the rod-shaped connection portion.