Abstract: The present disclosure describes systems, methods, and non-transitory computer readable media for detecting user interactions to edit a digital image from a client device and modify the digital image for the client device by using a web-based intermediary that modifies a latent vector of the digital image and an image modification neural network to generate a modified digital image from the modified latent vector. In response to user interaction to modify a digital image, for instance, the disclosed systems modify a latent vector extracted from the digital image to reflect the requested modification. The disclosed systems further use a latent vector stream renderer (as an intermediary device) to generate an image delta that indicates a difference between the digital image and the modified digital image. The disclosed systems then provide the image delta as part of a digital stream to a client device to quickly render the modified digital image.

Abstract: A 10G rate OLT terminal transceiver integrated chip based on XGSPON and DFB laser includes: a burst mode receiver RX which amplifies an optical signal from each ONU client into an electrical signal through a burst transimpedance amplifier TIA, processes amplitude detection, and outputs the signal whose amplitude met the threshold requirements to a host, and comprises a fast recovery module to discharge charges in an AC coupling capacitor to achieve multi-packet transmission without mutual interference, thereby meeting the timing sequence requirement of the XGSPON protocol; a continuous mode transmitter TX which receives the electrical signal attenuated by a PCB board, and selects a bypass BYPASS path or a clock data recovery CDR path for activation according to a degree of attenuation; and a digital control unit DIGIITAL which communicates with the host and provides control signals for the burst mode receiver RX and the continuous mode transmitter TX.

Abstract: A 10G rate OLT terminal transceiver integrated chip based on EPON with EML laser includes: a burst mode receiver RX which processes signal amplification and selects one of the two preset channels as a working channel for output through receiving an external command from a host; a continuous mode transmitter TX which receives the electrical signal attenuated by a PCB board, and selects a bypass BYPASS path or a clock data recovery CDR path according to a degree of attenuation to drive the EML laser; a digital control unit DIGIITAL for path selection of the burst mode receiver RX; and a power module POWER, wherein the opening and closing of the two rate channels are controlled by the level judgment unit and the output blocking unit.

Abstract: The present disclosure provides an electronic device. The electronic device includes a first insulating layer, a first antenna pattern, a second insulating layer, and a second antenna pattern. The first antenna pattern is configured to operate at a first frequency and at least partially disposed over the first insulating layer. The second insulating layer is disposed over the first insulating layer. The second antenna pattern is configured to operate at a second frequency different from the first frequency and at least partially disposed over the second insulating layer. A dielectric constant of the first insulating layer is different from a dielectric constant of the second insulating layer.

Abstract: A 10G rate OLT terminal transceiver integrated chip based on XGPON and EML laser includes: a burst mode receiver RX which amplifies an electrical signal originated each ONU client and processed through a burst mode receiver TIA, processes amplitude and frequency double-detection, and outputs the signal whose amplitude and waveform pulse width met the threshold requirements to a host, and comprises a fast recovery module to meet the timing sequence requirement of the XGPON protocol; a continuous mode transmitter TX which receives the electrical signal attenuated by a PCB board, and selects a bypass BYPASS path or a clock data recovery CDR path according to a degree of attenuation to drive the EML laser; a digital control unit DIGIITAL which provides control signals to the burst mode receiver RX and the continuous mode transmitter TX; and a power module POWER to supply working power to the chip.

Abstract: Source and drain formation techniques disclosed herein provide FinFETs with reduced channel resistance and reduced drain-induced barrier lowering. An exemplary three-step etch method for forming a source/drain recess in a source/drain region of a fin includes a first anisotropic etch, an isotropic etch, and a second anisotropic etch. The first anisotropic etch and the isotropic etch are tuned to define a location of a source/drain tip. A depth of the source/drain recess after the first anisotropic etch and the isotropic etch is less than a target depth. The second anisotropic etch is tuned to extend the depth of the source/drain recess to the target depth. The source/drain tip is near a top of the fin to reduce channel resistance while a bottom portion of the source/drain recess is spaced a distance from a gate footing that can minimize DIBL. The source/drain recess is filled with an epitaxial semiconductor material.

Abstract: The disclosure provides a digital-to-analog conversion device and an operation method thereof. The digital-to-analog conversion device includes a digital-to-analog conversion circuit and a slew rate enhancement circuit. The digital-to-analog conversion circuit is configured to convert a digital code into an analog voltage. An output terminal of the digital-to-analog conversion circuit outputs the analog voltage to a load circuit. A control terminal of the slew rate enhancement circuit is coupled to the digital-to-analog conversion circuit to receive a control voltage following the analog voltage. The slew rate enhancement circuit is coupled to the output terminal of the digital-to-analog conversion circuit. The slew rate enhancement circuit enhances the slew rate at the output terminal of the digital-to-analog conversion circuit based on the control voltage.

Abstract: A 10G rate OLT terminal transceiver integrated chip based on XGPON and DFB laser includes: a burst mode receiver RX, a continuous mode transmitter TX and a digital control unit DIGIITAL. The burst mode receiver RX amplifies an optical signal from each ONU client into an electrical signal through a burst TIA, processes double-detection for amplitude and frequency of the electrical signal, outputs the signal whose amplitude and waveform pulse width meet the threshold requirements to the host, and uses a fast recovery module to control the timing to meet the XGPON protocol. The continuous mode transmitter TX receives the electrical signal attenuated by the PCB, and selects the bypass BYPASS path or the clock data recovery CDR path according to the degree of attenuation. The digital control unit DIGIITAL is used to provide control signals for the burst mode receiver RX and the continuous mode transmitter TX.

Abstract: A flip-chip bonding structure includes a substrate and a chip. A lead of the substrate includes a body, a hollow opening, a bonding island and at least one connecting bridge. The hollow opening is in the body and surrounded by the body. The bonding island is located in the hollow opening such that there is a hollow space in the hollow opening and located between the body and the bonding island. The connecting bridge is located in the hollow space to connect the body and the bonding island. A bump of the chip is bonded to the bonding island by a solder. The solder is restricted on the bonding island and separated from the body by the hollow space so as to avoid the solder from overflowing to the body and avoid the chip from shifting.

Abstract: A method of semiconductor fabrication includes providing a semiconductor structure having a substrate and first, second, third, and fourth fins above the substrate. The method further includes forming an n-type epitaxial source/drain (S/D) feature on the first and second fins, forming a p-type epitaxial S/D feature on the third and fourth fins, and performing a selective etch process on the semiconductor structure to remove upper portions of the n-type epitaxial S/D feature and the p-type epitaxial S/D feature such that more is removed from the n-type epitaxial S/D feature than the p-type epitaxial S/D feature.

Abstract: Source and drain formation techniques disclosed herein provide FinFETs with reduced channel resistance and reduced drain-induced barrier lowering. An exemplary three-step etch method for forming a source/drain recess in a source/drain region of a fin includes a first anisotropic etch, an isotropic etch, and a second anisotropic etch. The first anisotropic etch and the isotropic etch are tuned to define a location of a source/drain tip. A depth of the source/drain recess after the first anisotropic etch and the isotropic etch is less than a target depth. The second anisotropic etch is tuned to extend the depth of the source/drain recess to the target depth. The source/drain tip is near a top of the fin to reduce channel resistance while a bottom portion of the source/drain recess is spaced a distance from a gate footing that can minimize DIBL. The source/drain recess is filled with an epitaxial semiconductor material.

Abstract: Systems and methods for image processing are described. One or more embodiments of the present disclosure identify a latent vector representing an image of a face, identify a target attribute vector representing a target attribute for the image, generate a modified latent vector using a mapping network that converts the latent vector and the target attribute vector into a hidden representation having fewer dimensions than the latent vector, wherein the modified latent vector is generated based on the hidden representation, and generate a modified image based on the modified latent vector, wherein the modified image represents the face with the target attribute.

Abstract: An integrated circuit (IC) device includes a redistribution line over a substrate, wherein an entire sidewall of the redistribution line is curved. The IC device further includes a passivation layer over the redistribution line, wherein a distance from a bottommost surface of the passivation layer to the substrate is less than a distance from a bottommost surface of the redistribution line to the substrate. The IC device further includes a polymer layer over the passivation layer.

Abstract: A display apparatus and an image displaying method are provided. The display apparatus includes a display module and a driving circuit. The driving circuit is coupled to the display module and receives an input image. The driving circuit determines a watermark area and a non-watermark area of the display module according to watermark information, and at least one of the watermark area and the non-watermark area is alternately driven by a first gamma curve and a second gamma curve. A brightness difference percentage between the first gamma curve and the second gamma curve at a same grayscale value between 10% and 90% of a grayscale percentage is between 0.2 and 0.6.

Abstract: A semiconductor structure includes: a U-metal-oxide-semiconductor field-effect transistor (UMOS) structure; and a trench junction barrier Schottky (TJBS) diode, wherein an insulating layer of a sidewall of the TJBS diode does not have a side gate.

Abstract: The present application relates to a method of operating a capacitance sensing device comprises: calculating a difference of a raw data compared to one of the raw data received in a previous data frame; and performing a comparison calculation based on the raw data and a stored baseline value to determine whether a proximity event has occurred. Under the proximity event, selects one of several baseline value update procedures based on the magnitude of the difference. Thus, the present application effectively avoids the problem of failure to update the baseline value when the object is close to the capacitance sensing device for a long period of time, which may lead to misjudgment of the capacitance sensing device.

Abstract: An assembly table includes a table plate, a table leg unit, a first connecting unit, a first mounting unit and a fastening unit. The table leg unit includes a first leg, a second leg and a third leg that are inclined with respect to the table plate, that intersect one another, and that are detachably mounted to a bottom surface of the table plate. The first connecting unit is detachably connected between the first leg and the second leg. The first mounting unit is detachably connected between the first leg and the third leg. The fastening unit includes a through hole formed through the third leg, and a penetrating fastener removably inserted through the through hole to fix the third leg to the second leg.

Abstract: A display device includes a screen, a screen support and a fixing module. The screen support is pivotally connected to the screen, and the screen support includes a first end and a second end. The fixing module is detachably connected to the screen support and includes a first sub-component and a second sub-component. The first sub-component has a first surface and a second surface, and the first sub-component is selectively connected to one of the first end and the second end. The second sub-component has a third surface and a fourth surface, and the second sub-component is configured for clamping a board. One of the first surface and the second surface of the first sub-component and one of the third surface and the fourth surface of the second sub-component are detachably connected.

Abstract: A display device includes a multiple of light-emitting elements and a multiple of driving circuits. Each of the multiple of driving circuits is configured to generate a driving current to illuminate one of the multiple of light-emitting elements. Each of the multiple of driving circuits includes a first transistor, a second transistor, a reset circuit, a first control circuit and a second control circuit. The driving current flows from a first system high voltage terminal through the first transistor, the second transistor and one of the multiple of light-emitting elements to a system low voltage terminal. The first control circuit is configured to control the first transistor to modulate pulse amplitude of the driving current. The second control circuit is configured to control the second transistor to modulate pulse width of the driving current.

Abstract: A phosphinated (2,6-dimethylphenyl ether) oligomer, preparation method thereof and cured product. The phosphinated (2,6-dimethylphenyl ether) oligomer includes a structure represented by Formula (1): wherein X is a single bond, —CH2—, —O—, —C(CH3)2— or R?0, R0, R1, R2 and R3 are independently hydrogen, C1-C6 alkyl or phenyl; n and m are independently an integer from 0 to 300; p and q are independently an integer from 1 to 4; Y is hydrogen, U and V are independently an aliphatic structure.