Abstract: A magnetic top stick for use at the opening portion of a core slot of an electromagnetic device includes a group of magnetically anisotropic members arranged in a substantially non-magnetic body adapted to fit snugly within the core slot. The magnetic properties of the group of members combine to provide the top stick with an overall high magnetic permeability in the depth direction of the core slot and overall low magnetic permeabilities in the width and longitudinal directions of the core slot. A convenient method of manufacturing the top stick includes first forming magnetically anisotropic sheets by cold rolling and annealing, then laminating and heat processing the sheets with B stage materials to generate a unitary laminated structure. The unitary laminated structure is sectioned into multiple magnetic flux bars which are in turn disposed in the non-magnetic body forming the top stick.

Abstract: A method for forming an aperture with a uniform void-free sidewall etch profile through a multi-layer insulator layer. There is formed upon a semiconductor substrate a multi-layer insulator layer which has a minimum of a first insulator layer and a second insulator layer. The second insulator layer is formed upon the first insulator layer. There is then etched through a first etch method a first aperture completely through the second insulator layer. The first etch method has: (1) a first perpendicular etch selectivity ratio for the second insulator layer with respect to the first insulator layer of at least about 4:1; and (2) a lateral:perpendicular etch selectivity ratio for the second insulator layer of from about 0.5:1 to about 1:1. The first aperture is then etched through a second etch method to form a second aperture completely through the second insulator layer and the first insulator layer.

Abstract: A new method of metal etching using a disposable metal antireflective coating process along with metal dry/wet etching is described. An insulating layer is provided over semiconductor device structures in and on a semiconductor substrate. Openings are made through the insulating layer to the semiconductor substrate and to the semiconductor device structures to be contacted. A barrier metal layer is deposited conformally over the insulating layer and within the openings. A metal layer is deposited over the barrier metal layer. The metal layer is covered with an antireflective coating. A layer of photoresist is coated onto the substrate and patterned to provide a photoresist mask. The antireflective coating, the metal layer and a portion of the barrier metal layer are etched away where the layers are not covered by the photoresist mask. The photoresist mask is removed.