Abstract: Genetically modified microorganisms that have the ability to convert carbon substrates into chemical products such as isobutanol are disclosed. For example, genetically modified methanotrophs that are capable of generating isobutanol at high titers from a methane source are disclosed. Methods of making these genetically modified microorganisms and methods of using them are also disclosed.

Abstract: Numerous embodiments of input circuitry for an analog neural memory in a deep learning artificial neural network are disclosed.

Abstract: A method and an assembly for securing a crimped medical device over a deflated balloon of a balloon catheter is provided. The medical device is positioned in its expanded state over the deflated balloon of the balloon catheter, and is then crimped over the deflated balloon. First and second eyelets of first and second strings, respectively, are then threaded through first and second rings, respectively, that are provided on the medical device. Next, a locking wire is advanced through a lumen defined between the sheath and the catheter body to exit the distal end of the sheath, and then advanced through the first and second eyelets and into the distal tip of the balloon catheter. The sheath is then advanced over the crimped medical device to the distal tip to completely cover the crimped medical device.

Abstract: Disclosed prosthetic valves can comprise a sewing ring configured to secure the valve to an implantation site. Some disclosed valves comprise a resiliently collapsible frame having a neutral configuration and a collapsed deployment configuration. Some disclosed frames can self-expand to the neutral configuration when released from the collapsed deployment configuration. Collapsing a disclosed valve can provide convenient access to the sewing ring, such as for securing the valve to the implantation site, as well as for the insertion of the valve through relatively small surgical incisions.

Abstract: The invention determines at least one of the angular speed and the angular position of a rotor of an electric machine through determination of the harmonics, using a closed loop comprising a harmonic observer, phase difference correction and a first phase-locked loop that estimates the position of the rotor.

Abstract: An example introducer is disclosed. An example introducer includes an inner liner including a lumen, a distal region and at least one folded portion extending along the distal region. The introducer also includes a reinforcing member having a length and including at least one spine extending along the length of the reinforcing member. The introducer also includes a sheath disposed along at least a portion of the introducer, wherein the sheath includes at least one perforation, wherein material adjacent to the at least one folded portion is removed from a distal portion of the introducer to form a tip region. The introducer also includes a tip member disposed along the tip region.

Abstract: A pill counting device includes a step feeder having moveable slats interleaved with fixed slats. The movable slats are vertically offset from one another and are configured to move vertically between top platforms of adjacent fixed slats to carry pills vertically up the step feeder. A top movable slat orients a subset of the plurality of pills into a row of pills to be fed into a count chamber. A camera configured to capture an image of a pill of the individual pills as it falls through the count chamber. The device further includes a control system configured to control movement of the movable slats and to control capturing of images by the camera. The control system is further configured to calculate a characteristic of the pill from the image, and to increment a pill counter in response to the characteristic of the pill meeting predefined criteria.

Abstract: Various examples of decoders and physical layout designs for non-volatile flash memory arrays in an analog neural system are disclosed. In one example, a system comprises a plurality of vector-by-matrix multiplication arrays in an analog neural memory system, each vector-by-matrix multiplication array comprising an array of non-volatile memory cells organized into rows and columns, wherein each memory cell comprises a word line terminal; a plurality of read row decoders, each read row decoder coupled to one of the plurality of vector-by-matrix multiplication arrays for applying a voltage to one or more selected rows during a read operation; and a shared program row decoder coupled to all of the plurality of vector-by-matrix multiplication arrays for applying a voltage to one or more selected rows in one or more of the vector-by-matrix multiplication arrays during a program operation.

Abstract: A method and an assembly for securing a crimped medical device over a deflated balloon of a balloon catheter is provided. The medical device is positioned in its expanded state over the deflated balloon of the balloon catheter, and is then crimped over the deflated balloon. First and second eyelets of first and second strings, respectively, are then threaded through first and second rings, respectively, that are provided on the medical device. Next, a locking wire is advanced through a lumen defined between the sheath and the catheter body to exit the distal end of the sheath, and then advanced through the first and second eyelets and into the distal tip of the balloon catheter. The sheath is then advanced over the crimped medical device to the distal tip to completely cover the crimped medical device.

Abstract: Source code routines are generated for storage management in a storage code development management tool. A script that includes the source code routines is generated. The storage code development management tool receives indications based on an execution of an object code generated via execution of the script. The storage code development management tool modifies the source code routines based on the received indications.

Abstract: Gas injector with a vacuum channel having an inlet opening in the front face and an outlet opening in the back face of the injector are described. The vacuum channel comprises a first leg extending a first length from the inlet opening in the front face at a first angle relative to the front face and a second leg extending a second length from the first leg to the outlet opening in the back face at a second angle relative to the front face. Processing chambers and methods of use comprising a plurality of processing regions bounded around an outer peripheral edge by one or more vacuum channel. A first processing region has a first vacuum channel with a first outer diameter and a second processing region has a second vacuum channel with a second outer diameter, the first outer diameter being less than the second outer diameter.

Abstract: The invention relates to lipstick compositions including at least one natural oil, at least one fatty alcohol wax and particles of at least one filler, in which the lipstick compositions contain minimal amount of animal-derived ingredients and/or beeswax, or are free of such ingredients, as well as to methods and kits including such corn positions.

Abstract: The present invention provides a method to control and process a set of conditions in an event handling system with many complex intrinsic conditions, including: step 1: receive the list of conditions; step 2: use the list data structure; step 3: break down the conditions; step 4: Classification; step 5: link the clauses.

Abstract: Various embodiments of the present disclosure are directed towards a memory device. The memory device has a first transistor having a first source/drain and a second source/drain, where the first source/drain and the second source/drain are disposed in a semiconductor substrate. A dielectric structure is disposed over the semiconductor substrate. A first memory cell is disposed in the dielectric structure and over the semiconductor substrate, where the first memory cell has a first electrode and a second electrode, where the first electrode of the first memory cell is electrically coupled to the first source/drain of the first transistor. A second memory cell is disposed in the dielectric structure and over the semiconductor substrate, where the second memory cell has a first electrode and a second electrode, where the first electrode of the second memory cell is electrically coupled to the second source/drain of the first transistor.

Abstract: Various embodiments of the present disclosure are directed towards a memory device including a first bottom electrode layer over a substrate. A ferroelectric switching layer is disposed over the first bottom electrode layer. A first top electrode layer is disposed over the ferroelectric switching layer. A second bottom electrode layer is disposed between the first bottom electrode layer and the ferroelectric switching layer. The second bottom electrode layer is less susceptible to oxidation than the first bottom electrode layer.

Abstract: Novel cyclic silicon precursors and oxidants are described. Methods for depositing silicon-containing films on a substrate are described. The substrate is exposed to a silicon precursor and a reactant to form the silicon-containing film (e.g., elemental silicon, silicon oxide, silicon nitride). The exposures can be sequential or simultaneous.

Abstract: Testing circuitry and methods are disclosed for use with analog neural memory in deep learning artificial neural networks. In one example, a method comprises programming a plurality of analog neural non-volatile memory cells in an array of analog neural non-volatile memory cells to store one of N different values, where N is a number of different levels that can be stored in any of the analog neural non-volatile memory cells; measuring a current drawn by the plurality of analog neural non-volatile memory cells; comparing the measured current to a target value; and identifying the plurality of the analog neural non-volatile memory cells as bad if the difference between the measured value and the target value exceeds a threshold.

Abstract: Various embodiments of the present disclosure are directed towards a metal-insulator-metal (MIM) capacitor including a diffusion barrier layer. A bottom electrode overlies a substrate. A capacitor dielectric layer overlies the bottom electrode. A top electrode overlies the capacitor dielectric layer. The top electrode includes a first top electrode layer, a second top electrode layer, and a diffusion barrier layer disposed between the first and second top electrode layers.

Abstract: A method for forming a semiconductor structure includes following operations. A first substrate including a first side, a second side opposite to the first side, and a metallic pad disposed over the first side is received. A dielectric structure including a first trench directly above the metallic pad is formed. A second trench is formed in the dielectric structure and a portion of the first substrate. A sacrificial layer is formed to fill the first trench and the second trench. A third trench is formed directly above the metallic pad. A barrier ring and a bonding structure are formed in the third trench. A bonding layer is disposed to bond the first substrate to a second substrate. A portion of the second side of the first substrate is removed to expose the sacrificial layer. The sacrificial layer is removed by an etchant.

Abstract: Numerous embodiments for performing tuning of a page or a word of non-volatile memory cells in an analog neural memory are disclosed. High voltage circuits used to generate high voltages applied to terminals of the non-volatile memory cells during the precision tuning process are also disclosed. Programming sequences for the application of the voltages to the terminals to minimize the occurrence of disturbances during tuning are also disclosed.