Abstract: An automatic gain control apparatus receiving an analog signal and outputting a digital signal includes a variable gain amplifier, an A/D converter, and a feedback circuit. The variable gain amplifier amplifies the analog signal with a gain. The A/D converter converts the amplified analog signal to the digital signal. The feedback circuit includes an amplitude level detector, a range detector, and a gain controller. The amplitude level detector generates a first amplitude level and a second amplitude level in response to the digital signal. The range detector generates an adjustment signal in response to the first amplitude level and the second amplitude level. The gain controller adjusts a gain control level for the variable gain amplifier in response to the adjustment signal.

Abstract: An indolestyryl compound. The indolestyryl compound has formula (I): wherein Z1 comprises benzene, naphthalene, or heterocyclic ring containing O, S, or N, R2 comprises H, halogen atoms, C1-5 alkyl, nitro, ester, carboxyl, sulfo, sulfonamide, sulfuric ester, amide, C1-3 alkoxy, amino, alkylamino, cyano, C1-6 alkylsulfonyl, or C2-7 alkoxy carbonyl, R3, R4, R5, and R6 comprise H, alkyl, aralkyl, or heterocyclic ring containing O, S, or N, R7 and R8 comprise H or alkyl, R10 comprises H, alkyl, halogen atoms, nitro, hydroxyl, amino, ester, or substituted or non-substituted sulfonyl, W comprises carbon or nitrogen, Y comprises carbon, oxygen, sulfur, selenium, —NR, or —C(CH3)2, m is 1˜3, and X1 comprises an anionic group or an anionic organometallic complex, wherein R3 and R4 are joined to a nitrogen atom or R5 and R6 are joined together to form a ring, and R bonded to nitrogen is C1-5 alkyl.

Abstract: An apparatus for fabricating a coverlayer of optical information storage media is disclosed. The apparatus comprises a rotating platform, a rotating plate and a UV irradiation system. A substrate is disposed on the rotating platform and a radiation setting resin material is disposed on a surface of the substrate. The rotating plate is moved towards the rotating platform to compress the radiation-setting resin material against the substrate. The resulting structure is rotated by rotating the rotating platform. A thin radiation-setting resin layer with a uniform thickness is formed on the substrate. The radiation-setting resin layer is illuminated by a UV light to harden the radiation-setting resin layer. Next, the rotating plate is separated from the radiation-setting resin layer while the radiation-setting resin layer remains adhered to the substrate. The hardened radiation-setting resin layer serves as a coverlayer of the optical information storage media.

Abstract: A clock rate adjustment apparatus and a method for adjusting a clock rate of a clock for an optical storage system are provided. The clock rate adjustment apparatus comprises an indication provider, a throughput rate detector, and a clock generator. The method performs the following steps. The indication provider generates an indicatory signal indicating a state of the optical storage system. The throughput rate detector generates a control signal in response to the indicatory signal. The clock generator generates the clock at the clock rate in response to the control signal. The clock rate determined by the clock rate adjustment apparatus may be adjusted dynamically in response to a required minimum clock rate and a variable data rate.

Abstract: An automatic gain control apparatus receiving an analog signal and outputting a digital signal includes a variable gain amplifier, an A/D converter, and a feedback circuit. The variable gain amplifier amplifies the analog signal with a gain. The A/D converter converts the amplified analog signal to the digital signal. The feedback circuit includes an amplitude level detector, a range detector, and a gain controller. The amplitude level detector generates a first amplitude level and a second amplitude level in response to the digital signal. The range detector generates an adjustment signal in response to the first amplitude level and the second amplitude level. The gain controller adjusts a gain control level for the variable gain amplifier in response to the adjustment signal.

Abstract: A recording layer including a novel dye for a high density optical recording medium, employing short wavelength laser source with a wavelength no longer than 530 nm 530 nm for recording high density information and reproduction/playback of the high density information recordings, is provided.

Abstract: A recording layer including a novel dye for a high density optical recording medium, employing short wavelength laser source with a wavelength no longer than 530 nm for recording high density information and reproduction/playback of the high density information recordings, is provided. The dye incorporated in the recording layer has the following general chemical structural formula (I).

Abstract: An apparatus for network communication comprises a plurality of hardware sockets and a plurality of buffers shared by hardware sockets to store information received from and to be transmitted to the network. The buffer is capable of storing one data unit transferred on the network. The hardware socket is capable of locking and releasing the buffers to allow buffer sharing. The number of the buffers is less than the number of the hardware sockets.

Abstract: A fluorescent dye, a structure of a fluorescent storage media and method using thereof, are disclosed. The fluorescent dye of the present invention comprises an organic violet fluorescent compound having a chemical structure (I) is suitable for using a short wavelength laser having a wavelength less than 500 nm as an excitation source. When a short wavelength laser is used for exciting the organic violet fluorescent compound (I), a fluorescence having an emission wavelength larger than 500 nm is induced, and a reading signal can be provided by detecting the intensity of the fluorescence radiation.

Abstract: Memory cells comprising: a semiconductor substrate having at least two source/drain regions separated by a channel region; a charge-trapping structure disposed above the channel region; and a gate disposed above the charge-trapping structure; wherein the charge-trapping structure comprises a bottom insulating layer, a first charge-trapping layer, and a second charge-trapping layer, wherein an interface between the bottom insulating layer and the substrate has a hydrogen concentration of less than about 3×1011/cm?2, and methods for forming such memory cells.

Abstract: A recording layer including a novel dye for a high density optical recording medium, employing short wavelength laser source with a wavelength no longer than 530 nm 530 nm for recording high density information and reproduction/playback of the high density information recordings, is provided.

Abstract: A wobble signal synthesizer for generating a synthesized wobble signal synchronized with physical wobble signal is disclosed. The wobble signal synthesizer includes a variable-period signal generating module for generating the synthesized wobble signal; a first period calculating module, electrically coupled to the variable-period signal generating module, for calculating the number of periods of a second reference clock in a certain period of the synthesized wobble signal; a second period calculating module for calculating the number of periods of the second reference clock in a certain wobble period at a disc rotation speed; a comparison module, electrically coupled to the variable-period signal generating module, the first period calculating module, and the second period calculating module, for outputting the period error value; and a phase alignment module, electrically coupled to the variable-period signal generating module, for determining the phase error value.

Abstract: A pre-pit signal generating device includes: a first slicer for generating a sliced signal corresponding to a push-pull signal based on a first reference level; a duty ratio controller coupled to the first slicer for adjusting the first reference level or the push-pull signal to control a duty ratio of the sliced signal to a predetermined ratio; a reference level generator coupled to the duty ratio controller for generating a second reference level corresponding to the first reference level; and a second slicer coupled to the reference level generator for generating a first pre-pit signal corresponding to the push-pull signal based on the second reference level.

Abstract: The present invention relates to a polymethine complex and an optical recording medium using said polymethine complex. Through using the polymethine complex formed by combining a polymethine cation with a heat-inhibiting anion as the optical recording material in the optical recording medium, not only the heat inference caused by thermal decomposition of the dyes during high speed optical recording can be reduced or avoided, but also absorption coefficient, sensitivity and recording speed in the region of ultraviolet and visible light of 300˜800 nm wavelength can be increased. The optical recording medium according to the present invention can achieve high-speed writing and reading with Pi errors less than 280 in case that the reflective layer of the optical recording medium has a minimal thickness of 50 nm.

Abstract: The present invention provides a method for producing a microorganism agent to be used in biocontrol and prevent plant from suffering the disease. The method is to provide a microorganism for working on an object, combine the microorganism with a modeling material to form an intermediate, and add a modeling reagent to the intermediate to form the agent. In practice, the microorganism agent is applied in a paddy rice system to make the agent to contact plant and release the microorganism on the plant to control and prevent the plant disease.

Abstract: Methods of forming charge-trapping dielectric layer structures in semiconductor memory devices which comprise: (a) providing a semiconductor substrate; (b) forming an oxide layer on at least a portion of the substrate; (c) forming two or more source/drain regions in the substrate below the oxide layer; (d) re-oxidizing the oxide layer; (e) forming a charge-trapping dielectric layer on the oxide layer; and (f) forming an insulating layer on the charge-trapping dielectric layer; as well as methods which comprise: (a) providing a semiconductor substrate; (b) forming an oxide layer on at least a portion of the substrate in a dry atmosphere; (c) forming two or more source/drain regions in the substrate below the oxide layer; (d) forming a charge-trapping dielectric layer on the oxide layer; (e) forming an insulating layer on the charge-trapping dielectric layer; and (f) annealing the insulating layer in an atmosphere having a hydrogen content of less than about 0.01% are described.

Abstract: The invention discloses a motion vector estimation system and the method thereof for estimating an output motion vector for a macroblock of a frame. The motion vector estimation system is capable of selectively horizontally shifting a search window corresponding to each macroblock, so as to improve reusability of pixel data from previous search window and reduce memory bandwidth.

Abstract: A packaging process including the following steps is provided. First, a first substrate and a second substrate are provided. The first substrate has first contacts, and the second substrate has second contacts. Next, the first substrate is placed on the second substrate, such that the first contacts are aligned with the second contacts. Then, the first substrate and the second substrate are submerged in a solution having BDMT. After that, the first substrate and the second substrate are removed from the solution, such that self-assembly mono-layers are formed between the first substrate and the second substrate, to electrically connect the first substrate and the second substrate. A package structure formed according to the above process is also provided.

Abstract: A bisstyryl compound. The bisstyryl compound has formula (I): wherein Z1 and Z2 are benzene, naphthalene, or heterocyclic ring, R1 is H, C1-5 alkyl, hydroxyl, halogen atoms, or alkoxy, R2 is H, halogen atoms, C1-5 alkyl, nitro, ester, carboxyl, sulfo, sulfonamide, sulfuric ester, amide, C1-3 alkoxy, amino, alkylamino, cyano, C1-6 alkylsulfonyl, or C2-7 alkoxy carbonyl, R3, R4, R5, and R6 are H, halogen atoms, alkyl, aralkyl, or heterocyclic ring containing O, S, or N, or R3 and R4 are joined to a nitrogen atom or R5 and R6 are joined together to form a ring, R7 and R8 are H or alkyl, W is nitrogen with or without Z1 and Z2 or aromatic group without Z1 and Z2, Y is carbon, oxygen, sulfur, selenium, —NR, or —C(CH3)2, m is 1-3, n is 1-18, and X1 and X2 are anionic groups or anionic organometallic complexes.

Abstract: A method of fabricating a non-volatile memory device at least comprises steps as follows. First, a substrate on which a bottom dielectric layer is formed is provided. Then, impurities are introduced through the bottom dielectric layer to the substrate, so as to form a plurality of spaced doped regions on the substrate. The structure is thermally annealed for pushing the spaced doped regions to diffuse outwardly. After annealing, a charge trapping layer is formed on the bottom dielectric layer, and a top dielectric layer is formed on the charge trapping layer. Finally, a gate structure (such as a polysilicon layer and a silicide) is formed on the top dielectric layer.