Abstract: Techniques are disclosed for customization of fin-based transistor devices to provide a diverse range of channel configurations and/or material systems within the same integrated circuit die. In accordance with one example embodiment, sacrificial fins are removed and replaced with custom semiconductor material of arbitrary composition and strain suitable for a given application. In one such case, each of a first set of the sacrificial fins is recessed or otherwise removed and replaced with a p-type material, and each of a second set of the sacrificial fins is recessed or otherwise removed and replaced with an n-type material. The p-type material can be completely independent of the process for the n-type material, and vice-versa. Numerous other circuit configurations and device variations are enabled using the techniques provided herein.

Abstract: Techniques are disclosed for programming memory devices such as solid-state drives. In an embodiment, a memory controller is configured to execute a programming sequence that interleaves coarse and fine tuning steps for neighboring word lines. In one example, three consecutive word lines are programmed in six steps. At step 1, word line n is coarse programmed to an intermediate voltage level; at step 2, word line n+1 is coarse programmed to an intermediate voltage level; at step 3, word line n is fine programmed to its target voltage level; at step 4, word line n+2 is coarse programmed to an intermediate voltage level; at step 5, word line n+1 is fine programmed to its target voltage level; at step 6, word line n+2 is fine programmed to its target voltage level. No reads are allowed until all cell levels are programmed. Phase change memory may be used as staging buffer.

Abstract: Generally, this disclosure provides systems, devices, methods and computer readable media for prevention of cable swap security attacks on storage devices. A host system may include a provisioning module configured to generate a challenge-response verification key-pair and further to provide the key-pair to the storage device to enable the challenge-response verification. The system may also include a link error detection module to detect a link error between the host system and the storage device. The system may further include a challenge-response protocol module configured to initiate, in response to the link-error detection, a verification challenge from the storage system and to provide a response to the verification challenge based on the key-pair.

Abstract: An embodiment includes a microelectronic device comprising: a substrate comprising a raised portion and a non-raised portion, wherein a dielectric material is disposed adjacent the raised portion, an epitaxial sub-fin structure disposed on the raised portion, wherein a bottom portion of the epitaxial sub-fin structure comprises an asymmetric profile, and an epitaxial fin device structure disposed on the sub-fin structure. Other embodiments are described herein.

Abstract: A nanowire device having a plurality of internal spacers and a method for forming said internal spacers are disclosed. In an embodiment, a semiconductor device comprises a nanowire stack disposed above a substrate, the nanowire stack having a plurality of vertically-stacked nanowires, a gate structure wrapped around each of the plurality of nanowires, defining a channel region of the device, the gate structure having gate sidewalls, a pair of source/drain regions on opposite sides of the channel region; and an internal spacer on a portion of the gate sidewall between two adjacent nanowires, internal to the nanowire stack. In an embodiment, the internal spacers are formed by depositing spacer material in dimples etched adjacent to the channel region. In an embodiment, the dimples are etched through the channel region. In another embodiment, the dimples are etched through the source/drain region.

Abstract: Techniques are disclosed for improved integration of germanium (Ge)-rich p-MOS source/drain contacts to, for example, reduce contact resistance. The techniques include depositing the p-type Ge-rich layer directly on a silicon (Si) surface in the contact trench location, because Si surfaces are favorable for deposition of high quality conductive Ge-rich materials. In one example method, the Ge-rich layer is deposited on a surface of the Si substrate in the source/drain contact trench locations, after removing a sacrificial silicon germanium (SiGe) layer previously deposited in the source/drain locations. In another example method, the Ge-rich layer is deposited on a Si cladding layer in the contact trench locations, where the Si cladding layer is deposited on a functional p-type SiGe layer. In some cases, the Ge-rich layer comprises at least 50% Ge (and may contain tin (Sn) and/or Si) and is boron (B) doped at levels above 1E20 cm?3.

Abstract: Techniques are disclosed for forming transistor devices having reduced parasitic contact resistance relative to conventional devices. The techniques can be implemented, for example, using a standard contact stack such as a series of metals on, for example, silicon or silicon germanium (SiGe) source/drain regions. In accordance with one example such embodiment, an intermediate boron doped germanium layer is provided between the source/drain and contact metals to significantly reduce contact resistance. Numerous transistor configurations and suitable fabrication processes will be apparent in light of this disclosure, including both planar and non-planar transistor structures (e.g., FinFETs), as well as strained and unstrained channel structures. Graded buffering can be used to reduce misfit dislocation. The techniques are particularly well-suited for implementing p-type devices, but can be used for n-type devices if so desired.

Abstract: A non-volatile memory interface employs concurrent memory operations for read operation preemption and includes transaction control logic configured to resume a suspended write operation concurrently with at least a portion of the transfer of read data from a non-volatile memory for a read operation which preempted the write operation. Memory control logic of the memory interface is configured to issue to the write operation suspend logic, a write operation resume command. The transaction control logic may be further configured to automatically suspend performing of a write operation in response to receipt of a read command. The transaction control logic may also be configured to automatically resume a previously suspended write operation in response to completion of a preemptive read operation by the memory.

Abstract: Described herein are techniques related one or more systems, apparatuses, methods, etc. for reducing induced currents in a apparatus chassis. For example, a fractal slot is constructed in the apparatus chassis to reduce the induced currents, and enhance passage of magnetic fields through the apparatus chassis. In this example, the fractal slot may include a no-self loop fractal space filling curve shape to provide high impedance to the induced currents.

Abstract: Described herein are architectures, platforms and methods for enhancing range and increasing data rates during near field communication (NFC) related functions or transactions.

Abstract: An integrated circuit die includes a quad-gate device nanowire of channel material for a transistor (e.g., single material or stack to be a channel of a MOS device) formed by removing a portion of a sub-fin material from below the channel material, where the sub-fin material was grown in an aspect ration trapping (ART) trench. In some cases, in the formation of such nanowires, it is possible to remove the defective fin material or area under the channel. Such removal isolates the fin channel, removes the fin defects and leakage paths, and forms the nanowire of channel material having four exposed surfaces upon which gate material may be formed.

Abstract: An n-MOS transistor device and method for forming such a device are disclosed. The n-MOS transistor device comprises a semiconductor substrate with one or more replacement active regions formed above the substrate. The replacement active regions comprise a first III-V semiconductor material. A gate structure is formed above the replacement active regions. Source/Drain (S/D) recesses are formed in the replacement active region adjacent to the gate structure. Replacement S/D regions are formed in the S/D recesses and comprise a second III-V semiconductor material having a lattice constant that is smaller than the lattice constant of the first III-V semiconductor material. The smaller lattice constant of the second III-V material induces a uniaxial-strain on the channel formed from the first III-V material. The uniaxial strain in the channel improves carrier mobility in the n-MOS device.

Abstract: Several systems and methods of chip select are described. In one such method, a device maintains two identifiers, (ID_a and ID_m). When the device receives a command, it examines the values of ID_a and ID_m relative to a third reference identifier (ID_s). If either ID_a or ID_m is equivalent to ID_s, the device executes the command, otherwise, the device ignores the command. By using two different identification methods, a system has options in choosing to activate devices, being able to selectively switch between selecting multiple devices and single devices in a quick manner. In another such method, a device may have a persistent area that stores identification information such as an ID_a. Thus, system functionality may remain independent from any defect/marginality associated with the physical or logical components required for initial ID_a assignment of all devices in the system.

Abstract: Systems and methods generate code from an executable model. The model may operate on variables having floating point data types. The systems and methods may unpack the sign, exponent, and mantissa components of the floating point variables, and interpret them as boolean, integer, or fixed-point data types. The systems and methods may include operators that operate on the extracted sign, exponent, and mantissa components, and that produce sign, exponent, and mantissa outputs having boolean, integer or fixed-point data types. The systems and methods may pack the sign, exponent, and mantissa components of the output into an integer and reinterpret the integer as a floating point data type. Having replaced the floating point data types with boolean, integer or fixed-point data types, the generated code may be suitable for programmable logic devices and/or microcontrollers that lack Floating Point Units (FPUs).

Abstract: Semiconductor devices including a subfin including a first III-V compound semiconductor and a channel including a second III-V compound semiconductor are described. In some embodiments the semiconductor devices include a substrate including a trench defined by at least two trench sidewalls, wherein the first III-V compound semiconductor is deposited on the substrate within the trench and the second III-V compound semiconductor is epitaxially grown on the first III-V compound semiconductor. In some embodiments, a conduction band offset between the first III-V compound semiconductor and the second III-V compound semiconductor is greater than or equal to about 0.3 electron volts. Methods of making such semiconductor devices and computing devices including such semiconductor devices are also described.

Abstract: Described herein are techniques related to near field coupling and wireless power transfers. For example, a coil antenna configuration is the same in all portable devices; however, when the portable devices are arranged in back to back position with one another, the coil antenna configuration defines a dissymmetric and antenna configuration.

Abstract: An embodiment includes an apparatus comprising: a fin structure on a substrate, the fin structure including fin top and bottom portions, a channel including a majority carrier, and an epitaxial (EPI) layer; an insulation layer including insulation layer top and bottom portions adjacent the fin top and bottom portions; wherein (a) the EPI layer comprises one or more of group IV and III-V materials, (b) the fin bottom portion includes a fin bottom portion concentration of dopants of opposite polarity to the majority carrier, (c) the fin top portion includes a fin top portion concentration of the dopants less than the fin bottom portion concentration, (d) the insulation layer bottom portion includes an insulation layer bottom portion concentration of the dopants, and (e) the insulation layer top portion includes an insulation top layer portion concentration greater than the insulation bottom portion concentration. Other embodiments are described herein.

Abstract: Systems and methods of optimizing a gate profile for performance and gate fill are disclosed. A semiconductor device having an optimized gate profile includes a semiconductor substrate and a fin extending above the semiconductor substrate. A pair of source and drain regions are disposed on opposite sides of a channel region. A gate stack is disposed over the channel region, where the gate stack includes a top portion separated from a bottom portion by a tapered portion. The top portion and at least a portion of the tapered portion are disposed above the fm.

Abstract: Described herein are techniques related to near field communication and wireless power transfers. A portable device may include a modular antenna that offers consistent characteristics independent of integration environment. The modular antenna may include a continuous loop of coil antenna and a ferrite material that are encapsulated by a shield. The shield may form a “U” shape configuration to encapsulate the top layer coil antenna and the middle layer ferrite material in all three sides, which are defined by a bottom portion, an outer wall, and an inner wall. Furthermore, the shield may include an outer rim and an inner rim to maintain the same coil antenna characteristics in the modular antenna.

Abstract: An embodiment includes a device comprising: a fin structure including an upper portion and a lower portion, the upper portion having a bottom surface directly contacting an upper surface of the lower portion; wherein (a) the lower portion is included in a trench having an aspect ratio (depth to width) of at least 2:1; (b) the bottom surface has a bottom maximum width and the upper surface has an upper maximum width that is greater the bottom maximum width; (c) the bottom surface covers a middle portion of the upper surface but does not cover lateral portions of the upper surface; and (d) the upper portion includes an upper III-V material and the lower portion includes a lower III-V material different from the upper III-V material. Other embodiments are described herein.