Abstract: A Silicon Carbide (SiC) semiconductor device having back-side contacts to a P-type region and methods of fabrication thereof are disclosed. In one embodiment, an SiC semiconductor device includes an N-type substrate and an epitaxial structure on a front-side of the N-type substrate. The epitaxial substrate includes a P-type layer adjacent to the N-type substrate and one or more additional SiC layers on the P-type layer opposite the N-type substrate. The semiconductor device also includes one or more openings through the N-type substrate that extend from a back-side of the N-type substrate to the P-type layer and a back-side contact on the back-side of the N-type substrate and within the one or more openings such that the back-side contact is in physical and electrical contact with the P-type layer. The semiconductor device further includes front-side contacts on the epitaxial structure opposite the N-type substrate.

Abstract: A vertically oriented field effect device has a body and an enhance gate structure. The body includes a JFET (junction field effect transistor) region disposed between junction implants that extend into the body from a top surface of the body. The gate structure includes a supplemental gate dielectric, a primary gate dielectric, and a gate contact. The supplemental gate dielectric is formed over the top surface of the body above the JFET region, such that the supplemental dielectric is separated from the junction implants by a gap. The primary gate dielectric is formed over the supplemental gate dielectric, above the gap over the top surface of the body, and over at least a portion of the junction implants. The gate contact is formed over the primary gate dielectric.

Abstract: A vertical field-effect transistor (FET) device includes a monolithically integrated bypass diode connected between a source contact and a drain contact of the vertical FET device. According to one embodiment, the vertical FET device includes a pair of junction implants separated by a junction field-effect transistor (JFET) region. At least one of the junction implants of the vertical FET device includes a deep well region that is shared with the integrated bypass diode, such that the shared deep well region functions as both a source junction in the vertical FET device and a junction barrier region in the integrated bypass diode. The vertical FET device and the integrated bypass diode may include a substrate, a drift layer over the substrate, and a spreading layer over the drift layer, such that the junction implants of the vertical FET device are formed in the spreading layer.

Abstract: A vertical field-effect transistor (FET) device includes a monolithically integrated bypass diode connected between a source contact and a drain contact of the vertical FET device. According to one embodiment, the vertical FET device includes a pair of junction implants separated by a junction field-effect transistor (JFET) region. At least one of the junction implants of the vertical FET device includes a deep well region that is shared with the integrated bypass diode, such that the shared deep well region functions as both a source junction in the vertical FET device and a junction barrier region in the integrated bypass diode. The vertical FET device and the integrated bypass diode may include a substrate, a drift layer over the substrate, and a spreading layer over the drift layer, such that the junction implants of the vertical FET device are formed in the spreading layer.

Abstract: Embodiments of a semiconductor die having a semiconductor device implemented on the semiconductor die and an edge termination structure around a periphery of the semiconductor device and methods of fabricating the same are disclosed. In one embodiment, a semiconductor die includes a semiconductor device and an edge termination structure around a periphery of the semiconductor device, where the edge termination structure includes negative features (e.g., trenches and/or divots) that vary dose in a corresponding edge termination region to approximate a desired dose profile. In one embodiment, the desired dose profile is a substantially decreasing or substantially linearly decreasing dose from an edge of a main junction of the semiconductor device to an edge of the edge termination region. In this manner, electric field crowding at the edge of the main junction of the semiconductor device is substantially reduced, which in turn substantially improves a break-down voltage of the semiconductor device.

Abstract: A power metal-oxide-semiconductor field-effect transistor (MOSFET) includes a substrate, a drift layer over the substrate, and a spreading layer over the drift layer. The spreading layer includes a pair of junction implants separated by a junction gate field effect (JFET) region. A gate oxide layer is on top of the spreading layer. The gate contact is on top of the gate oxide layer. Each one of the source contacts are on a portion of the spreading layer separate from the gate oxide layer and the gate contact. The drain contact is on the surface of the substrate opposite the drift layer.

Abstract: The present disclosure relates to a silicon carbide (SiC) field effect device that has a gate assembly formed in a trench. The gate assembly includes a gate dielectric that is an dielectric layer, which is deposited along the inside surface of the trench and a gate dielectric formed over the gate dielectric. The trench extends into the body of the device from a top surface and has a bottom and side walls that extend from the top surface of the body to the bottom of the trench. The thickness of the dielectric layer on the bottom of the trench is approximately equal to or greater than the thickness of the dielectric layer on the side walls of the trench.

Abstract: Methods of forming a power semiconductor device having an edge termination are provided in which the power semiconductor device that has a drift region of a first conductivity type is formed on a substrate. A junction termination extension is formed on the substrate adjacent the power semiconductor device, the junction termination extension including a plurality of junction termination zones that are doped with dopants having a second conductivity type. The junction termination zones have different effective doping concentrations. A dopant activation process is performed to activate at least some of the dopants in the junction termination zones. An electrical characteristic of the power semiconductor device is measured. Then, the junction termination extension is etched in order to reduce the effective doping concentration within the junction termination extension.

Abstract: A system for treating an aneurysm comprises an elongate flexible shaft and an expandable member. An expandable scaffold is disposed over the expandable member and may be expanded from a collapsed configuration to an expanded configuration. A double-walled filling structure is disposed over the scaffold and has an outer wall and an inner wall. The filling structure is adapted to be filled with a hardenable fluid filing medium so that the outer wall conforms to an inside surface of the aneurysm and the inner wall forms a substantially tubular lumen to provide a path for blood flow. In the expanded configuration the scaffold engages the inner wall of the filling structure. A tether is releasably coupled with the filling structure and the flexible shaft thereby constraining axial movement of the structures relative to each other.

Abstract: The present disclosure generally relates to a Schottky diode that has a substrate, a drift layer provided over the substrate, and a Schottky layer provided over an active region of the drift layer. The metal for the Schottky layer and the semiconductor material for the drift layer are selected to provide a low barrier height Schottky junction between the drift layer and the Schottky layer.

Abstract: A semiconductor die and a process for fabricating the semiconductor die are disclosed. The semiconductor die has a substrate and a silicon carbide (SiC) epitaxial structure on the substrate. The SiC epitaxial structure includes at least a first N-type SiC layer, at least a first P-type SiC layer, and carbon vacancy reduction material, which has been implanted into a surface of the SiC epitaxial structure. Further, the SiC epitaxial structure has been annealed to mobilize the carbon vacancy reduction material to diffuse carbon atoms substantially throughout the SiC epitaxial structure, thereby increasing an average carrier lifetime in the SiC epitaxial structure.

Abstract: Techniques and technology for formally verifying a first electronic design with a second electronic design that has been synthesized from the first electronic design, wherein the synthesis process included structural transformation operations, is provide herein. In various implementations, a first design and a second design are received. The second design having been synthesized from the first design, where no structural transformation operations were performed during synthesis of the second design. Additionally, a third design and a structural transformation guidance file are received. The third design having also been synthesized from the first design, but, where structural transformation operations were performed during synthesis of the third design. The structural transformation guidance file specifies what transformations where made during synthesis.

Abstract: A power module is disclosed that includes a housing with an interior chamber wherein multiple switch modules are mounted within the interior chamber. The switch modules comprise multiple transistors and diodes that are interconnected to facilitate switching power to a load. In one embodiment, at least one of the switch modules supports a current density of at least 10 amperes per cm2.

Abstract: Disclosed are systems, apparatus, and methods for integrating an information feed. In various implementations, an identity of a user may be determined based on authentication information, where the authentication information identifies a user profile. In some implementations, profile information is identified based on the determined identity, where the profile information identifies one or more entities tracked using one or more information feeds associated with the user profile, and where the one or more information feeds comprises one or more feed items stored in a database system. In various implementations, the identified profile information is associated with a user account provided by a network communications application.

Abstract: Techniques and technology for formally verifying a first electronic design with a second electronic design that has been synthesized from the first electronic design, wherein the synthesis process included structural transformation operations, is provide herein. In various implementations, a first design and a second design are received. The second design having been synthesized from the first design, where no structural transformation operations were performed during synthesis of the second design. Additionally, a third design and a structural transformation guidance file are received. The third design having also been synthesized from the first design, but, where structural transformation operations were performed during synthesis of the third design. The structural transformation guidance file specifies what transformations where made during synthesis.

Abstract: A system for treating an aneurysm comprises an elongate flexible shaft and an expandable member. An expandable scaffold is disposed over the expandable member and may be expanded from a collapsed configuration to an expanded configuration. A double-walled filling structure is disposed over the scaffold and has an outer wall and an inner wall. The filling structure is adapted to be filled with a hardenable fluid filing medium so that the outer wall conforms to an inside surface of the aneurysm and the inner wall forms a substantially tubular lumen to provide a path for blood flow. In the expanded configuration the scaffold engages the inner wall of the filling structure. A tether is releasably coupled with the filling structure and the flexible shaft thereby constraining axial movement of the structures relative to each other.

Abstract: Techniques for enabling real-time enterprise workforce management over a telecom network are provided. The techniques include receiving real-time workforce information from one or more telecom networks, and using the real-time information for dynamic load optimization to enable real-time enterprise workforce management.

Abstract: A system for treating an aneurysm comprises an elongate flexible shaft and an expandable member. An expandable scaffold is disposed over the expandable member and may be expanded from a collapsed configuration to an expanded configuration. A double-walled filling structure is disposed over the scaffold and has an outer wall and an inner wall. The filling structure is adapted to be filled with a hardenable fluid filing medium so that the outer wall conforms to an inside surface of the aneurysm and the inner wall forms a substantially tubular lumen to provide a path for blood flow. In the expanded configuration the scaffold engages the inner wall of the filling structure. A tether is releasably coupled with the filling structure and the flexible shaft thereby constraining axial movement of the structures relative to each other.

Abstract: A prosthesis comprises a tubular body that is expandable from a contracted configuration to a radially expanded configuration. The tubular body has a total length and comprises a first section, a second section and a central section disposed therebetween. The total length of the tubular body in the expanded configuration is at least 95% of the total length of the tubular body in the contracted configuration. The three sections have a plurality of tubular rings, each with a plurality of struts having a length and coupled together to form a series of peaks and valleys. A connector couples adjacent tubular rings together. The length of the central section struts is different than the length of the other struts and the central section is coupled with both the first and second sections.

Abstract: A system for treating an aneurysm in a blood vessel comprises a docking scaffold having with upstream and downstream ends, and a central passageway therebetween. The upstream end engages the blood vessel upstream of the aneurysm. A portion of a first and second scaffolds are slidably received in the central passageway such that an outside surface of the first and second scaffolds engage an inside surface of the docking scaffold. A double-walled filling structure has outer and inner walls and the filling structure is adapted to be filled with a hardenable fluid filling medium so that the outer wall conforms to an inside surface of the aneurysm and the inner wall forms a substantially tubular lumen to provide a path for blood flow therethrough. The double-walled filling structure is coupled with at least one of the first and second leg scaffolds in expanded configuration.