Patents by Inventor Anchuan Wang
Anchuan Wang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 7972968Abstract: A high density plasma dep/etch/dep method of depositing a dielectric film into a gap between adjacent raised structures on a substrate disposed in a substrate processing chamber. The method deposits a first portion of the dielectric film within the gap by forming a high density plasma from a first gaseous mixture flown into the process chamber, etches the deposited first portion of the dielectric film by flowing an etchant gas comprising CxFy, where a ratio of x to y is greater than or equal to 1:2 and then deposits a second portion of the dielectric film over the first portion by forming a high density plasma from a second gaseous mixture flown into the process chamber.Type: GrantFiled: August 18, 2008Date of Patent: July 5, 2011Assignee: Applied Materials, Inc.Inventors: Young S. Lee, Ying Rui, Dmitry Lubomirsky, Daniel J. Hoffman, Jang Gyoo Yang, Anchuan Wang
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Patent number: 7910491Abstract: A method of filling a trench is described and includes depositing a dielectric liner with a high ratio of silicon oxide to dielectric liner etch rate in fluorine-containing etch chemistries. Silicon oxide is deposited within the trench and etched to reopen or widen a gap near the top of the trench. The dielectric liner protects the underlying substrate during the etch process so the gap can be made wider. Silicon oxide is deposited within the trench again to substantially fill the trench.Type: GrantFiled: May 7, 2009Date of Patent: March 22, 2011Assignee: Applied Materials, Inc.Inventors: Young Soo Kwon, Bi Jang, Anchuan Wang, Young S. Lee, Mihaela Balseanu, Li-Qun Xia, Jin Ho Jeon
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Publication number: 20110061810Abstract: Apparatus and methods for the manufacture of semiconductor devices suitable for narrow pitch applications and methods of fabrication thereof are described herein. Disclosed are various single chambers configured to form and/or shape a material layer by oxidizing a surface of a material layer to form an oxide layer; removing at least some of the oxide layer by an etching process; and cyclically repeating the oxidizing and removing processes until the material layer is formed to a desired shape. In some embodiments, the material layer may be a floating gate of a semiconductor device.Type: ApplicationFiled: March 10, 2010Publication date: March 17, 2011Applicant: Applied Materials, Inc.Inventors: Udayan Ganguly, Joseph M. Ranish, Aaron M. Hunter, Jing Tang, Christopher S. Olsen, Matthew D. Scotney-Castle, Vicky Nguyen, Swaminathan Srinivasan, Johanes F. Swenberg, Anchuan Wang, Nitin K. Ingle, Manish Hemkar, Jose A. Marin
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Patent number: 7867921Abstract: A processing chamber is seasoned by providing a flow of season precursors to the processing chamber. A high-density plasma is formed from the season precursors by applying at least 7500 W of source power distributed with greater than 70% of the source power at a top of the processing chamber. A season layer having a thickness of at least 5000 ? is deposited at one point using the high-density plasma. Each of multiple substrates is transferred sequentially into the processing chamber to perform a process that includes etching. The processing chamber is cleaned between sequential transfers of the substrates.Type: GrantFiled: September 4, 2008Date of Patent: January 11, 2011Assignee: Applied Materials, Inc.Inventors: Anchuan Wang, Young S. Lee, Manoj Vellaikal, Jason Thomas Bloking, Jin Ho Jeon, Hemant P. Mungekar
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Patent number: 7745350Abstract: Methods are disclosed of depositing a silicon oxide film on a substrate disposed in a substrate processing chamber. The substrate has a gap formed between adjacent raised surfaces. A first portion of the silicon oxide film is deposited over the substrate and within the gap using a high-density plasma process. Thereafter, a portion of the deposited first portion of the silicon oxide film is etched back. This includes flowing a halogen precursor through a first conduit from a halogen-precursor source to the substrate processing chamber, forming a high-density plasma from the halogen precursor, and terminating flowing the halogen precursor after the portion has been etched back. Thereafter, a halogen scavenger is flowed to the substrate processing chamber to react with residual halogen in the substrate processing chamber. Thereafter, a second portion of the silicon oxide film is deposited over the first portion of the silicon oxide film and within the gap using a high-density plasma process.Type: GrantFiled: September 4, 2008Date of Patent: June 29, 2010Assignee: Applied Materials, Inc.Inventors: Anchuan Wang, Young S. Lee, Manoj Vellaikal, Jason Thomas Bloking, Jin Ho Jeon, Hemant P. Mungekar
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Publication number: 20100099236Abstract: A method of filling a trench is described and includes depositing a dielectric liner with a high ratio of silicon oxide to dielectric liner etch rate in fluorine-containing etch chemistries. Silicon oxide is deposited within the trench and etched to reopen or widen a gap near the top of the trench. The dielectric liner protects the underlying substrate during the etch process so the gap can be made wider. Silicon oxide is deposited within the trench again to substantially fill the trench.Type: ApplicationFiled: May 7, 2009Publication date: April 22, 2010Applicant: Applied Materials, Inc.Inventors: Young Soo Kwon, Bi Jang, Anchuan Wang, Young S. Lee, Mihaela Balseanu, Li-Qun Xia, Jin Ho Jeon
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Patent number: 7678715Abstract: The present invention pertains to methods of depositing low wet etch rate silicon nitride films on substrates using high-density plasma chemical vapor deposition techniques at substrate temperatures below 600° C. The method additionally involves the maintenance of a relatively high ratio of nitrogen to silicon in the plasma and a low process pressure.Type: GrantFiled: December 21, 2007Date of Patent: March 16, 2010Assignee: Applied Materials, Inc.Inventors: Hemant P. Mungekar, Jing Wu, Young S. Lee, Anchuan Wang
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Publication number: 20100041207Abstract: A high density plasma dep/etch/dep method of depositing a dielectric film into a gap between adjacent raised structures on a substrate disposed in a substrate processing chamber. The method deposits a first portion of the dielectric film within the gap by forming a high density plasma from a first gaseous mixture flown into the process chamber, etches the deposited first portion of the dielectric film by flowing an etchant gas comprising CxFy, where a ratio of x to y is greater than or equal to 1:2 and then deposits a second portion of the dielectric film over the first portion by forming a high density plasma from a second gaseous mixture flown into the process chamber.Type: ApplicationFiled: August 18, 2008Publication date: February 18, 2010Applicant: APPLIED MATERIALS, INC.Inventors: Young S. Lee, Ying Rui, Dmitry Lubomirsky, Daniel J. Hoffman, Jang Gyoo Yang, Anchuan Wang
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Patent number: 7628897Abstract: A film is deposited on a substrate disposed in a substrate processing chamber. The substrate has a trench formed between adjacent raised surfaces. A first portion of the film is deposited over the substrate from a first gaseous mixture flowed into the process chamber by chemical-vapor deposition. Thereafter, the first portion is etched by flowing an etchant gas having a halogen precursor, a hydrogen precursor, and an oxygen precursor into the process chamber. Thereafter, a second portion of the film is deposited over the substrate from a second gaseous mixture flowed into the processing chamber by chemical-vapor deposition.Type: GrantFiled: September 12, 2003Date of Patent: December 8, 2009Assignee: Applied Materials, Inc.Inventors: Hemant P. Mungekar, Anjana M. Patel, Manoj Vellaikal, Anchuan Wang, Bikram Kapoor
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Patent number: 7629271Abstract: A method for forming a compressive film over a field effect transistor over a substrate is provided. The field effect transistor includes a channel region between a drain and a source within the substrate. The channel region is controlled by a gate electrode. The method includes depositing a diamond-like carbon (DLC) film over the field effect transistor to compress the channel region by generating a plasma of a processing gas including a precursor gas and an additive gas, wherein the precursor substantially includes only C2H2 and the additive gas includes Ar.Type: GrantFiled: September 19, 2008Date of Patent: December 8, 2009Assignee: Applied Materials, Inc.Inventors: Jing Wu, Anchuan Wang, Robert T. Chen, Young S. Lee
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Patent number: 7595088Abstract: A method of depositing a silicon oxide layer over a substrate having a trench formed between adjacent raised surfaces. In one embodiment the silicon oxide layer is formed in a multistep process that includes depositing a first portion of layer over the substrate and within the trench by forming a high density plasma process that has simultaneous deposition and sputtering components from a first process gas comprising a silicon source, an oxygen source and helium and/or molecular hydrogen with highD/S ratio, for example, 10-20 and, thereafter, depositing a second portion of the silicon oxide layer over the substrate and within the trench by forming a high density plasma process that has simultaneous deposition and sputtering components from a second process gas comprising a silicon source, an oxygen source and molecular hydrogen with a lowerD/S ratio of, for example, 3-10.Type: GrantFiled: August 10, 2004Date of Patent: September 29, 2009Assignee: Applied Materials, Inc.Inventors: Bikram Kapoor, M. Ziaul Karim, Anchuan Wang
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Publication number: 20090163041Abstract: The present invention pertains to methods of depositing low wet etch rate silicon nitride films on substrates using high-density plasma chemical vapor deposition techniques at substrate temperatures below 600° C. The method additionally involves the maintenance of a relatively high ratio of nitrogen to silicon in the plasma and a low process pressure.Type: ApplicationFiled: December 21, 2007Publication date: June 25, 2009Applicant: Applied Materials, Inc.Inventors: Hemant P. Mungekar, Jing Wu, Young S. Lee, Anchuan Wang
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Patent number: 7524750Abstract: A process is provided for depositing an silicon oxide film on a substrate disposed in a process chamber. A process gas that includes a halogen source, a fluent gas, a silicon source, and an oxidizing gas reactant is flowed into the process chamber. A plasma having an ion density of at least 1011 ions/cm3 is formed from the process gas. The silicon oxide film is deposited over the substrate with a halogen concentration less than 1.0%. The silicon oxide film is deposited with the plasma using a process that has simultaneous deposition and sputtering components. The flow rate of the halogen source to the process chamber to the flow rate of the silicon source to the process chamber is substantially between 0.5 and 3.0.Type: GrantFiled: October 27, 2006Date of Patent: April 28, 2009Assignee: Applied Materials, Inc.Inventors: Srinivas D. Nemani, Young S. Lee, Ellie Y. Yieh, Anchuan Wang, Jason Thomas Bloking, Lung-Tien Han
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Publication number: 20090075489Abstract: A processing chamber is seasoned by providing a flow of season precursors to the processing chamber. A high-density plasma is formed from the season precursors by applying at least 7500 W of source power distributed with greater than 70% of the source power at a top of the processing chamber. A season layer having a thickness of at least 5000 ? is deposited at one point using the high-density plasma. Each of multiple substrates is transferred sequentially into the processing chamber to perform a process that includes etching. The processing chamber is cleaned between sequential transfers of the substrates.Type: ApplicationFiled: September 4, 2008Publication date: March 19, 2009Applicant: Applied Materials, Inc.Inventors: Anchuan Wang, Young S. Lee, Manoj Vellaikal, Jason Thomas Bloking, Jin Ho Jeon, Hemant P. Mungekar
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Publication number: 20090068853Abstract: Methods are disclosed of depositing a silicon oxide film on a substrate disposed in a substrate processing chamber. The substrate has a gap formed between adjacent raised surfaces. A first portion of the silicon oxide film is deposited over the substrate and within the gap using a high-density plasma process. Thereafter, a portion of the deposited first portion of the silicon oxide film is etched back. This includes flowing a halogen precursor through a first conduit from a halogen-precursor source to the substrate processing chamber, forming a high-density plasma from the halogen precursor, and terminating flowing the halogen precursor after the portion has been etched back. Thereafter, a halogen scavenger is flowed to the substrate processing chamber to react with residual halogen in the substrate processing chamber. Thereafter, a second portion of the silicon oxide film is deposited over the first portion of the silicon oxide film and within the gap using a high-density plasma process.Type: ApplicationFiled: September 4, 2008Publication date: March 12, 2009Applicant: Applied Materials, Inc.Inventors: Anchuan Wang, Young S. Lee, Manoj Vellaikal, Jason Thomas Bloking, Jin Ho Jeon, Hemant P. Mungekar
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Publication number: 20080299775Abstract: Methods are disclosed for depositing a silicon oxide film on a substrate disposed in a substrate processing chamber. The substrate has a gap formed between adjacent raised surfaces. A silicon-containing gas, an oxygen-containing gas, and a fluent gas are flowed into the substrate processing chamber. A high-density plasma is formed from the silicon-containing gas, the oxygen-containing gas, and the fluent gas. A first portion of the silicon oxide film is deposited using the high-density plasma at a deposition rate between 900 and 6000 ?/min and with a deposition/sputter ratio greater than 30. The deposition/sputter ratio is defined as a ratio of a net deposition rate and a blanket sputtering rate to the blanket sputtering rate. Thereafter, a portion of the deposited first portion of the silicon oxide film is etched. A second portion of the silicon oxide film is deposited over the etched portion of the silicon oxide film.Type: ApplicationFiled: June 4, 2007Publication date: December 4, 2008Applicant: Applied Materials, Inc.Inventors: Anchuan Wang, Young S. Lee, Manoj Vellaikal, Jason Thomas Bloking, Jin Ho Jeon, Hemant P. Mungekar
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Publication number: 20080142483Abstract: A method of forming a dielectric material in a substrate gap using a high-density plasma is described. The method may include depositing a first portion of the dielectric material into the gap with the high-density plasma. The deposition may form a protruding structure that at least partially blocks the deposition of the dielectric material into the gap. The first portion of dielectric material is exposed to an etchant that includes reactive species from a mixture that includes NH3 and NF3. The etchant forms a solid reaction product with the protruding structure, and the solid reaction product may be removed from the substrate. A final portion of the dielectric material may be deposited in the gap with the high-density plasma.Type: ApplicationFiled: November 29, 2007Publication date: June 19, 2008Applicant: Applied Materials, Inc.Inventors: Zhong Qiang Hua, Rionard Purnawan, Jason Thomas Bloking, Anchuan Wang, Young S. Lee, Ellie Y. Yieh
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Patent number: 7383702Abstract: Embodiments of the present invention provide a highly uniform low cost production worthy solution for manufacturing low propagation loss optical waveguides on a substrate. In one embodiment, the present invention provides a method of forming a PSG optical waveguide on an undercladding layer of a substrate that includes forming at least one silicate glass optical core on said undercladding layer using a plasma enhanced chemical vapor deposition process including a silicon source gas, an oxygen source gas, and a phosphorus source gas, wherein the oxygen source gas and silicon source gas have a ratio of oxygen atoms to silicon atoms greater than 20:1.Type: GrantFiled: June 5, 2006Date of Patent: June 10, 2008Assignee: Applied Materials, Inc.Inventors: Hichem M'Saad, Anchuan Wang, Sang Ahn
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Patent number: 7325419Abstract: Embodiments of the present invention provide a highly uniform low cost production worthy solution for manufacturing low propagation loss optical waveguides on a substrate. In one embodiment, the present invention provides a method of forming a PSG optical waveguide on an undercladding layer of a substrate that includes forming at least one silicate glass optical core on said undercladding layer using a plasma enhanced chemical vapor deposition process including a silicon source gas, an oxygen source gas, and a phosphorus source gas, wherein the oxygen source gas and silicon source gas have a ratio of oxygen atoms to silicon atoms greater than 20:1.Type: GrantFiled: June 5, 2006Date of Patent: February 5, 2008Assignee: Applied Materials, Inc.Inventors: Hichem M'Saad, Anchuan Wang, Sang Ahn
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Publication number: 20080024055Abstract: Transparent conducting oxide thin films having a reduced indium content and/or an increased tin content are provided. In addition, processes for producing the same, precursors for producing the same, and transparent electroconductive substrate for display panels and organic electroluminescence devices, both including the transparent conducting oxide thin films, are provided.Type: ApplicationFiled: March 22, 2007Publication date: January 31, 2008Inventors: Tobin Marks, Jun Ni, Anchuan Wang, Yu Yang, Andrew Metz, Shu Jin, Lian Wang