Patents by Inventor Anchuan Wang
Anchuan Wang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 7628897Abstract: A film is deposited on a substrate disposed in a substrate processing chamber. The substrate has a trench formed between adjacent raised surfaces. A first portion of the film is deposited over the substrate from a first gaseous mixture flowed into the process chamber by chemical-vapor deposition. Thereafter, the first portion is etched by flowing an etchant gas having a halogen precursor, a hydrogen precursor, and an oxygen precursor into the process chamber. Thereafter, a second portion of the film is deposited over the substrate from a second gaseous mixture flowed into the processing chamber by chemical-vapor deposition.Type: GrantFiled: September 12, 2003Date of Patent: December 8, 2009Assignee: Applied Materials, Inc.Inventors: Hemant P. Mungekar, Anjana M. Patel, Manoj Vellaikal, Anchuan Wang, Bikram Kapoor
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Patent number: 7629271Abstract: A method for forming a compressive film over a field effect transistor over a substrate is provided. The field effect transistor includes a channel region between a drain and a source within the substrate. The channel region is controlled by a gate electrode. The method includes depositing a diamond-like carbon (DLC) film over the field effect transistor to compress the channel region by generating a plasma of a processing gas including a precursor gas and an additive gas, wherein the precursor substantially includes only C2H2 and the additive gas includes Ar.Type: GrantFiled: September 19, 2008Date of Patent: December 8, 2009Assignee: Applied Materials, Inc.Inventors: Jing Wu, Anchuan Wang, Robert T. Chen, Young S. Lee
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Patent number: 7595088Abstract: A method of depositing a silicon oxide layer over a substrate having a trench formed between adjacent raised surfaces. In one embodiment the silicon oxide layer is formed in a multistep process that includes depositing a first portion of layer over the substrate and within the trench by forming a high density plasma process that has simultaneous deposition and sputtering components from a first process gas comprising a silicon source, an oxygen source and helium and/or molecular hydrogen with highD/S ratio, for example, 10-20 and, thereafter, depositing a second portion of the silicon oxide layer over the substrate and within the trench by forming a high density plasma process that has simultaneous deposition and sputtering components from a second process gas comprising a silicon source, an oxygen source and molecular hydrogen with a lowerD/S ratio of, for example, 3-10.Type: GrantFiled: August 10, 2004Date of Patent: September 29, 2009Assignee: Applied Materials, Inc.Inventors: Bikram Kapoor, M. Ziaul Karim, Anchuan Wang
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Publication number: 20090163041Abstract: The present invention pertains to methods of depositing low wet etch rate silicon nitride films on substrates using high-density plasma chemical vapor deposition techniques at substrate temperatures below 600° C. The method additionally involves the maintenance of a relatively high ratio of nitrogen to silicon in the plasma and a low process pressure.Type: ApplicationFiled: December 21, 2007Publication date: June 25, 2009Applicant: Applied Materials, Inc.Inventors: Hemant P. Mungekar, Jing Wu, Young S. Lee, Anchuan Wang
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Patent number: 7524750Abstract: A process is provided for depositing an silicon oxide film on a substrate disposed in a process chamber. A process gas that includes a halogen source, a fluent gas, a silicon source, and an oxidizing gas reactant is flowed into the process chamber. A plasma having an ion density of at least 1011 ions/cm3 is formed from the process gas. The silicon oxide film is deposited over the substrate with a halogen concentration less than 1.0%. The silicon oxide film is deposited with the plasma using a process that has simultaneous deposition and sputtering components. The flow rate of the halogen source to the process chamber to the flow rate of the silicon source to the process chamber is substantially between 0.5 and 3.0.Type: GrantFiled: October 27, 2006Date of Patent: April 28, 2009Assignee: Applied Materials, Inc.Inventors: Srinivas D. Nemani, Young S. Lee, Ellie Y. Yieh, Anchuan Wang, Jason Thomas Bloking, Lung-Tien Han
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Publication number: 20090075489Abstract: A processing chamber is seasoned by providing a flow of season precursors to the processing chamber. A high-density plasma is formed from the season precursors by applying at least 7500 W of source power distributed with greater than 70% of the source power at a top of the processing chamber. A season layer having a thickness of at least 5000 ? is deposited at one point using the high-density plasma. Each of multiple substrates is transferred sequentially into the processing chamber to perform a process that includes etching. The processing chamber is cleaned between sequential transfers of the substrates.Type: ApplicationFiled: September 4, 2008Publication date: March 19, 2009Applicant: Applied Materials, Inc.Inventors: Anchuan Wang, Young S. Lee, Manoj Vellaikal, Jason Thomas Bloking, Jin Ho Jeon, Hemant P. Mungekar
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Publication number: 20090068853Abstract: Methods are disclosed of depositing a silicon oxide film on a substrate disposed in a substrate processing chamber. The substrate has a gap formed between adjacent raised surfaces. A first portion of the silicon oxide film is deposited over the substrate and within the gap using a high-density plasma process. Thereafter, a portion of the deposited first portion of the silicon oxide film is etched back. This includes flowing a halogen precursor through a first conduit from a halogen-precursor source to the substrate processing chamber, forming a high-density plasma from the halogen precursor, and terminating flowing the halogen precursor after the portion has been etched back. Thereafter, a halogen scavenger is flowed to the substrate processing chamber to react with residual halogen in the substrate processing chamber. Thereafter, a second portion of the silicon oxide film is deposited over the first portion of the silicon oxide film and within the gap using a high-density plasma process.Type: ApplicationFiled: September 4, 2008Publication date: March 12, 2009Applicant: Applied Materials, Inc.Inventors: Anchuan Wang, Young S. Lee, Manoj Vellaikal, Jason Thomas Bloking, Jin Ho Jeon, Hemant P. Mungekar
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Publication number: 20080299775Abstract: Methods are disclosed for depositing a silicon oxide film on a substrate disposed in a substrate processing chamber. The substrate has a gap formed between adjacent raised surfaces. A silicon-containing gas, an oxygen-containing gas, and a fluent gas are flowed into the substrate processing chamber. A high-density plasma is formed from the silicon-containing gas, the oxygen-containing gas, and the fluent gas. A first portion of the silicon oxide film is deposited using the high-density plasma at a deposition rate between 900 and 6000 ?/min and with a deposition/sputter ratio greater than 30. The deposition/sputter ratio is defined as a ratio of a net deposition rate and a blanket sputtering rate to the blanket sputtering rate. Thereafter, a portion of the deposited first portion of the silicon oxide film is etched. A second portion of the silicon oxide film is deposited over the etched portion of the silicon oxide film.Type: ApplicationFiled: June 4, 2007Publication date: December 4, 2008Applicant: Applied Materials, Inc.Inventors: Anchuan Wang, Young S. Lee, Manoj Vellaikal, Jason Thomas Bloking, Jin Ho Jeon, Hemant P. Mungekar
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Publication number: 20080142483Abstract: A method of forming a dielectric material in a substrate gap using a high-density plasma is described. The method may include depositing a first portion of the dielectric material into the gap with the high-density plasma. The deposition may form a protruding structure that at least partially blocks the deposition of the dielectric material into the gap. The first portion of dielectric material is exposed to an etchant that includes reactive species from a mixture that includes NH3 and NF3. The etchant forms a solid reaction product with the protruding structure, and the solid reaction product may be removed from the substrate. A final portion of the dielectric material may be deposited in the gap with the high-density plasma.Type: ApplicationFiled: November 29, 2007Publication date: June 19, 2008Applicant: Applied Materials, Inc.Inventors: Zhong Qiang Hua, Rionard Purnawan, Jason Thomas Bloking, Anchuan Wang, Young S. Lee, Ellie Y. Yieh
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Patent number: 7383702Abstract: Embodiments of the present invention provide a highly uniform low cost production worthy solution for manufacturing low propagation loss optical waveguides on a substrate. In one embodiment, the present invention provides a method of forming a PSG optical waveguide on an undercladding layer of a substrate that includes forming at least one silicate glass optical core on said undercladding layer using a plasma enhanced chemical vapor deposition process including a silicon source gas, an oxygen source gas, and a phosphorus source gas, wherein the oxygen source gas and silicon source gas have a ratio of oxygen atoms to silicon atoms greater than 20:1.Type: GrantFiled: June 5, 2006Date of Patent: June 10, 2008Assignee: Applied Materials, Inc.Inventors: Hichem M'Saad, Anchuan Wang, Sang Ahn
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Patent number: 7325419Abstract: Embodiments of the present invention provide a highly uniform low cost production worthy solution for manufacturing low propagation loss optical waveguides on a substrate. In one embodiment, the present invention provides a method of forming a PSG optical waveguide on an undercladding layer of a substrate that includes forming at least one silicate glass optical core on said undercladding layer using a plasma enhanced chemical vapor deposition process including a silicon source gas, an oxygen source gas, and a phosphorus source gas, wherein the oxygen source gas and silicon source gas have a ratio of oxygen atoms to silicon atoms greater than 20:1.Type: GrantFiled: June 5, 2006Date of Patent: February 5, 2008Assignee: Applied Materials, Inc.Inventors: Hichem M'Saad, Anchuan Wang, Sang Ahn
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Publication number: 20080024055Abstract: Transparent conducting oxide thin films having a reduced indium content and/or an increased tin content are provided. In addition, processes for producing the same, precursors for producing the same, and transparent electroconductive substrate for display panels and organic electroluminescence devices, both including the transparent conducting oxide thin films, are provided.Type: ApplicationFiled: March 22, 2007Publication date: January 31, 2008Inventors: Tobin Marks, Jun Ni, Anchuan Wang, Yu Yang, Andrew Metz, Shu Jin, Lian Wang
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Publication number: 20070243693Abstract: A process is provided for depositing an silicon oxide film on a substrate disposed in a process chamber. A process gas that includes a halogen source, a fluent gas, a silicon source, and an oxidizing gas reactant is flowed into the process chamber. A plasma having an ion density of at least 1011 ions/cm3 is formed from the process gas. The silicon oxide film is deposited over the substrate with a halogen concentration less than 1.0%. The silicon oxide film is deposited with the plasma using a process that has simultaneous deposition and sputtering components. The flow rate of the halogen source to the process chamber to the flow rate of the silicon source to the process chamber is substantially between 0.5 and 3.0.Type: ApplicationFiled: October 27, 2006Publication date: October 18, 2007Applicant: Applied Materials, Inc.Inventors: Srinivas D. Nemani, Young S. Lee, Ellie Y. Yieh, Anchuan Wang, Jason Thomas Bloking, Lung-Tien Han
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Patent number: 7244658Abstract: The present invention generally relates to low compressive stress doped silicate glass films for STI applications. By way of non-limited example, the stress-lowering dopant may be a fluorine dopant, a germanium dopant, or a phosphorous dopant. The low compressive stress STI films will generally exhibit a compressive stress of less than 180 MPa, and preferably less than about 170 MPa. In certain embodiment, the STI films of the invention will exhibit a compressive stress less than about 100 MPa. Further, in certain embodiments, the low compressive stress STI films of the invention will comprise between about 0.1 and 25 atomic % of the stress-lowering dopant.Type: GrantFiled: October 17, 2005Date of Patent: July 17, 2007Assignee: Applied Materials, Inc.Inventors: Ellie Y Yieh, Lung-Tien Han, Anchuan Wang, Lin Zhang
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Publication number: 20070087515Abstract: The present invention generally relates to low compressive stress doped silicate glass films for STI applications. By way of non-limited example, the stress-lowering dopant may be a fluorine dopant, a germanium dopant, or a phosphorous dopant. The low compressive stress STI films will generally exhibit a compressive stress of less than 180 MPa, and preferably less than about 170 MPa. In certain embodiment, the STI films of the invention will exhibit a compressive stress less than about 100 MPa. Further, in certain embodiments, the low compressive stress STI films of the invention will comprise between about 0.1 and 25 atomic % of the stress-lowering dopant.Type: ApplicationFiled: October 17, 2005Publication date: April 19, 2007Applicant: Applied Materials, Inc.Inventors: Ellie Yieh, Lung-Tien Han, Anchuan Wang, Lin Zhang
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Patent number: 7205240Abstract: A gapfill process is provided using cycling of HDP-CVD deposition, etching, and deposition step. The fluent gas during the first deposition step includes an inert gas such as He, but includes H2 during the remainder deposition step. The higher average molecular weight of the fluent gas during the first deposition step provides some cusping over structures that define the gap to protect them during the etching step. The lower average molecular weight of the fluent gas during the remainder deposition step has reduced sputtering characteristics and is effective at filling the remainder of the gap.Type: GrantFiled: June 4, 2003Date of Patent: April 17, 2007Assignee: Applied Materials, Inc.Inventors: M. Ziaul Karim, Bikram Kapoor, Anchuan Wang, Dong Qing Li, Katsunari Ozeki, Manoj Vellaikal, Zhuang Li
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Publication number: 20060266081Abstract: Embodiments of the present invention provide a highly uniform low cost production worthy solution for manufacturing low propagation loss optical waveguides on a substrate. In one embodiment, the present invention provides a method of forming a PSG optical waveguide on an undercladding layer of a substrate that includes forming at least one silicate glass optical core on said undercladding layer using a plasma enhanced chemical vapor deposition process including a silicon source gas, an oxygen source gas, and a phosphorus source gas, wherein the oxygen source gas and silicon source gas have a ratio of oxygen atoms to silicon atoms greater than 20:1.Type: ApplicationFiled: June 5, 2006Publication date: November 30, 2006Applicant: Applied Materials, Inc.Inventors: Hichem M'Saad, Anchuan Wang, Sang Ahn
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Publication number: 20060207294Abstract: Embodiments of the present invention provide a highly uniform low cost production worthy solution for manufacturing low propagation loss optical waveguides on a substrate. In one embodiment, the present invention provides a method of forming a PSG optical waveguide on an undercladding layer of a substrate that includes forming at least one silicate glass optical core on said undercladding layer using a plasma enhanced chemical vapor deposition process including a silicon source gas, an oxygen source gas, and a phosphorus source gas, wherein the oxygen source gas and silicon source gas have a ratio of oxygen atoms to silicon atoms greater than 20:1.Type: ApplicationFiled: June 5, 2006Publication date: September 21, 2006Applicant: Applied Materials, Inc.Inventors: Hichem M'Saad, Anchuan Wang, Sang Ahn
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Patent number: 7080528Abstract: Embodiments of the present invention provide a highly uniform low cost production worthy solution for manufacturing low propagation loss optical waveguides on a substrate. In one embodiment, the present invention provides a method of forming a PSG optical waveguide on an undercladding layer of a substrate that includes forming at least one silicate glass optical core on said undercladding layer using a plasma enhanced chemical vapor deposition process including a silicon source gas, an oxygen source gas, and a phosphorus source gas, wherein the oxygen source gas and silicon source gas have a ratio of oxygen atoms to silicon atoms greater than 20:1.Type: GrantFiled: October 23, 2002Date of Patent: July 25, 2006Assignee: Applied Materials, Inc.Inventors: Hichem M'Saad, Anchuan Wang, Sang Ahn
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Patent number: 6890597Abstract: A combination of deposition and polishing steps are used to permit improved uniformity of a film after the combination of steps. Both the deposition and polishing are performed with processes that vary across the substrate. The combination of the varying deposition and etching rates results in a film that is substantially planar after the film has been polished. In some instances, it may be easier to control the variation of one of the two processes than the other so that the more controllable process is tailored to accommodate nonuniformities introduced by the less controllable process.Type: GrantFiled: May 9, 2003Date of Patent: May 10, 2005Assignee: Applied Materials, Inc.Inventors: Padmanabhan Krishnaraj, Bruno Geoffrion, Michael S. Cox, Lin Zhang, Bikram Kapoor, Anchuan Wang, Zhenjiang Cui