Patents by Inventor Anchuan Wang

Anchuan Wang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20070243693
    Abstract: A process is provided for depositing an silicon oxide film on a substrate disposed in a process chamber. A process gas that includes a halogen source, a fluent gas, a silicon source, and an oxidizing gas reactant is flowed into the process chamber. A plasma having an ion density of at least 1011 ions/cm3 is formed from the process gas. The silicon oxide film is deposited over the substrate with a halogen concentration less than 1.0%. The silicon oxide film is deposited with the plasma using a process that has simultaneous deposition and sputtering components. The flow rate of the halogen source to the process chamber to the flow rate of the silicon source to the process chamber is substantially between 0.5 and 3.0.
    Type: Application
    Filed: October 27, 2006
    Publication date: October 18, 2007
    Applicant: Applied Materials, Inc.
    Inventors: Srinivas D. Nemani, Young S. Lee, Ellie Y. Yieh, Anchuan Wang, Jason Thomas Bloking, Lung-Tien Han
  • Patent number: 7244658
    Abstract: The present invention generally relates to low compressive stress doped silicate glass films for STI applications. By way of non-limited example, the stress-lowering dopant may be a fluorine dopant, a germanium dopant, or a phosphorous dopant. The low compressive stress STI films will generally exhibit a compressive stress of less than 180 MPa, and preferably less than about 170 MPa. In certain embodiment, the STI films of the invention will exhibit a compressive stress less than about 100 MPa. Further, in certain embodiments, the low compressive stress STI films of the invention will comprise between about 0.1 and 25 atomic % of the stress-lowering dopant.
    Type: Grant
    Filed: October 17, 2005
    Date of Patent: July 17, 2007
    Assignee: Applied Materials, Inc.
    Inventors: Ellie Y Yieh, Lung-Tien Han, Anchuan Wang, Lin Zhang
  • Publication number: 20070087515
    Abstract: The present invention generally relates to low compressive stress doped silicate glass films for STI applications. By way of non-limited example, the stress-lowering dopant may be a fluorine dopant, a germanium dopant, or a phosphorous dopant. The low compressive stress STI films will generally exhibit a compressive stress of less than 180 MPa, and preferably less than about 170 MPa. In certain embodiment, the STI films of the invention will exhibit a compressive stress less than about 100 MPa. Further, in certain embodiments, the low compressive stress STI films of the invention will comprise between about 0.1 and 25 atomic % of the stress-lowering dopant.
    Type: Application
    Filed: October 17, 2005
    Publication date: April 19, 2007
    Applicant: Applied Materials, Inc.
    Inventors: Ellie Yieh, Lung-Tien Han, Anchuan Wang, Lin Zhang
  • Patent number: 7205240
    Abstract: A gapfill process is provided using cycling of HDP-CVD deposition, etching, and deposition step. The fluent gas during the first deposition step includes an inert gas such as He, but includes H2 during the remainder deposition step. The higher average molecular weight of the fluent gas during the first deposition step provides some cusping over structures that define the gap to protect them during the etching step. The lower average molecular weight of the fluent gas during the remainder deposition step has reduced sputtering characteristics and is effective at filling the remainder of the gap.
    Type: Grant
    Filed: June 4, 2003
    Date of Patent: April 17, 2007
    Assignee: Applied Materials, Inc.
    Inventors: M. Ziaul Karim, Bikram Kapoor, Anchuan Wang, Dong Qing Li, Katsunari Ozeki, Manoj Vellaikal, Zhuang Li
  • Publication number: 20060266081
    Abstract: Embodiments of the present invention provide a highly uniform low cost production worthy solution for manufacturing low propagation loss optical waveguides on a substrate. In one embodiment, the present invention provides a method of forming a PSG optical waveguide on an undercladding layer of a substrate that includes forming at least one silicate glass optical core on said undercladding layer using a plasma enhanced chemical vapor deposition process including a silicon source gas, an oxygen source gas, and a phosphorus source gas, wherein the oxygen source gas and silicon source gas have a ratio of oxygen atoms to silicon atoms greater than 20:1.
    Type: Application
    Filed: June 5, 2006
    Publication date: November 30, 2006
    Applicant: Applied Materials, Inc.
    Inventors: Hichem M'Saad, Anchuan Wang, Sang Ahn
  • Publication number: 20060207294
    Abstract: Embodiments of the present invention provide a highly uniform low cost production worthy solution for manufacturing low propagation loss optical waveguides on a substrate. In one embodiment, the present invention provides a method of forming a PSG optical waveguide on an undercladding layer of a substrate that includes forming at least one silicate glass optical core on said undercladding layer using a plasma enhanced chemical vapor deposition process including a silicon source gas, an oxygen source gas, and a phosphorus source gas, wherein the oxygen source gas and silicon source gas have a ratio of oxygen atoms to silicon atoms greater than 20:1.
    Type: Application
    Filed: June 5, 2006
    Publication date: September 21, 2006
    Applicant: Applied Materials, Inc.
    Inventors: Hichem M'Saad, Anchuan Wang, Sang Ahn
  • Patent number: 7080528
    Abstract: Embodiments of the present invention provide a highly uniform low cost production worthy solution for manufacturing low propagation loss optical waveguides on a substrate. In one embodiment, the present invention provides a method of forming a PSG optical waveguide on an undercladding layer of a substrate that includes forming at least one silicate glass optical core on said undercladding layer using a plasma enhanced chemical vapor deposition process including a silicon source gas, an oxygen source gas, and a phosphorus source gas, wherein the oxygen source gas and silicon source gas have a ratio of oxygen atoms to silicon atoms greater than 20:1.
    Type: Grant
    Filed: October 23, 2002
    Date of Patent: July 25, 2006
    Assignee: Applied Materials, Inc.
    Inventors: Hichem M'Saad, Anchuan Wang, Sang Ahn
  • Patent number: 6890597
    Abstract: A combination of deposition and polishing steps are used to permit improved uniformity of a film after the combination of steps. Both the deposition and polishing are performed with processes that vary across the substrate. The combination of the varying deposition and etching rates results in a film that is substantially planar after the film has been polished. In some instances, it may be easier to control the variation of one of the two processes than the other so that the more controllable process is tailored to accommodate nonuniformities introduced by the less controllable process.
    Type: Grant
    Filed: May 9, 2003
    Date of Patent: May 10, 2005
    Assignee: Applied Materials, Inc.
    Inventors: Padmanabhan Krishnaraj, Bruno Geoffrion, Michael S. Cox, Lin Zhang, Bikram Kapoor, Anchuan Wang, Zhenjiang Cui
  • Publication number: 20050008790
    Abstract: A method of depositing a silicon oxide layer over a substrate having a trench formed between adjacent raised surfaces. In one embodiment the silicon oxide layer is formed in a multistep process that includes depositing a first portion of layer over the substrate and within the trench by forming a high density plasma process that has simultaneous deposition and sputtering components from a first process gas comprising a silicon source, an oxygen source and helium and/or molecular hydrogen with highD/S ratio, for example, 10-20 and, thereafter, depositing a second portion of the silicon oxide layer over the substrate and within the trench by forming a high density plasma process that has simultaneous deposition and sputtering components from a second process gas comprising a silicon source, an oxygen source and molecular hydrogen with a lowerD/S ratio of, for example, 3-10.
    Type: Application
    Filed: August 10, 2004
    Publication date: January 13, 2005
    Applicant: Applied Materials, Inc.
    Inventors: Bikram Kapoor, M. Ziaul Karim, Anchuan Wang
  • Publication number: 20040245091
    Abstract: A gapfill process is provided using cycling of HDP-CVD deposition, etching, and deposition step. The fluent gas during the first deposition step includes an inert gas such as He, but includes H2 during the remainder deposition step. The higher average molecular weight of the fluent gas during the first deposition step provides some cusping over structures that define the gap to protect them during the etching step. The lower average molecular weight of the fluent gas during the remainder deposition step has reduced sputtering characteristics and is effective at filling the remainder of the gap.
    Type: Application
    Filed: June 4, 2003
    Publication date: December 9, 2004
    Applicant: Applied Materials, Inc.
    Inventors: M Ziaul Karim, Bikram Kapoor, Anchuan Wang, DongQing Li, Katsunary Ozeki, Manoj Vellaikal, Zhuang Li
  • Publication number: 20040224090
    Abstract: A combination of deposition and polishing steps are used to permit improved uniformity of a film after the combination of steps. Both the deposition and polishing are performed with processes that vary across the substrate. The combination of the varying deposition and etching rates results in a film that is substantially planar after the film has been polished. In some instances, it may be easier to control the variation of one of the two processes than the other so that the more controllable process is tailored to accommodate nonuniformities introduced by the less controllable process.
    Type: Application
    Filed: May 9, 2003
    Publication date: November 11, 2004
    Applicant: Applied Materials, Inc.
    Inventors: Padmanabhan Krishnaraj, Bruno Geoffrion, Michael S. Cox, Lin Zhang, Bikram Kapoor, Anchuan Wang, Zhenjiang Cui
  • Patent number: 6808748
    Abstract: A method of depositing a silicon oxide layer over a substrate having a trench formed between adjacent raised surfaces. In one embodiment the silicon oxide layer is formed in a multistep process that includes depositing a first portion of layer over the substrate and within the trench by forming a high density plasma process that has simultaneous deposition and sputtering components from a first process gas comprising a silicon source, an oxygen source and helium and/or molecular hydrogen with high D/S ratio, for example, 10-20 and, thereafter, depositing a second portion of the silicon oxide layer over the substrate and within the trench by forming a high density plasma process that has simultaneous deposition and sputtering components from a second process gas comprising a silicon source, an oxygen source and molecular hydrogen with a lower D/S ratio of, for example, 3-10.
    Type: Grant
    Filed: January 23, 2003
    Date of Patent: October 26, 2004
    Assignee: Applied Materials, Inc.
    Inventors: Bikram Kapoor, M. Ziaul Karim, Anchuan Wang
  • Publication number: 20040079728
    Abstract: A film is deposited on a substrate disposed in a substrate processing chamber. The substrate has a trench formed between adjacent raised surfaces. A first portion of the film is deposited over the substrate from a first gaseous mixture flowed into the process chamber by chemical-vapor deposition. Thereafter, the first portion is etched by flowing an etchant gas having a halogen precursor, a hydrogen precursor, and an oxygen precursor into the process chamber. Thereafter, a second portion of the film is deposited over the substrate from a second gaseous mixture flowed into the processing chamber by chemical-vapor deposition.
    Type: Application
    Filed: September 12, 2003
    Publication date: April 29, 2004
    Applicant: APPLIED MATERIALS, INC.
    Inventors: Hemant P. Mungekar, Anjana M. Patel, Manoj Vellaikal, Anchuan Wang, Bikram Kapoor
  • Publication number: 20040079118
    Abstract: Embodiments of the present invention provide a highly uniform low cost production worthy solution for manufacturing low propagation loss optical waveguides on a substrate. In one embodiment, the present invention provides a method of forming a PSG optical waveguide on an undercladding layer of a substrate that includes forming at least one silicate glass optical core on said undercladding layer using a plasma enhanced chemical vapor deposition process including a silicon source gas, an oxygen source gas, and a phosphorus source gas, wherein the oxygen source gas and silicon source gas have a ratio of oxygen atoms to silicon atoms greater than 20:1.
    Type: Application
    Filed: October 23, 2002
    Publication date: April 29, 2004
    Applicants: Applied Materials Inc, A Delaware Corporation
    Inventors: Hichem M'Saad, Anchuan Wang, Sang Ahn
  • Patent number: 6667248
    Abstract: A method is provided for forming a fluorinated silicate glass layer with HDP-CVD having a lower dielectric constant without compromising the mechanical properties of hardness and compressive stress. A gaseous mixture comprising a silicon-containing gas, an oxygen-containing gas, and a fluorine-containing gas is provided to a process chamber. The ratio of the flow rate of the fluorine-containing gas to the flow rate of the silicon-containing gas is greater than 0.65. A high-density plasma is generated from the gaseous mixture by applying a source RF power having a power density less than 12 W/cm2. A bias is applied to a substrate in the process chamber at a bias power density greater than 0.8 W/cm2 and less than 2.4 W/cm2. The fluorinated silicate glass layer is deposited onto the substrate using the high-density plasma.
    Type: Grant
    Filed: September 5, 2001
    Date of Patent: December 23, 2003
    Assignee: Applied Materials Inc.
    Inventors: Hichem M'Saad, Chad Peterson, Zhuang Li, Anchuan Wang, Farhad Moghadam
  • Publication number: 20030118865
    Abstract: Transparent conducting oxide compositions having enhanced work function, for use with anode structures and light-emitting diode devices.
    Type: Application
    Filed: August 27, 2002
    Publication date: June 26, 2003
    Inventors: Tobin J. Marks, He Yan, Jun Ni, Ji Cul, Anchuan Wang, Nikki L. Edleman
  • Publication number: 20030110808
    Abstract: Embodiments of the present invention provide a highly uniform low cost production worthy solution for manufacturing low propagation loss optical waveguides on a substrate. The method comprises depositing an optical core using a high-density plasma deposition process. The method is particularly advantageous in forming high contrast refractive index optical cores, such as SiOxNy, with drastically reduced propagation loss. In one embodiment the high-density plasma deposition process is an HDP-CVD process. In another embodiment the high-density plasma deposition process is an HDP-ECR process. In one embodiment, a method of forming an optical waveguide comprises forming at least one optical core on an undercladding layer of a substrate using a high-density plasma deposition process.
    Type: Application
    Filed: December 14, 2001
    Publication date: June 19, 2003
    Applicant: APPLIED MATERIALS INC., a Delaware corporation
    Inventors: Hichem M'Saad, Anchuan Wang
  • Publication number: 20030050724
    Abstract: A method is provided for forming a fluorinated silicate glass layer with HDP-CVD having a lower dielectric constant without compromising the mechanical properties of hardness and compressive stress. A gaseous mixture comprising a silicon-containing gas, an oxygen-containing gas, and a fluorine-containing gas is provided to a process chamber. The ratio of the flow rate of the fluorine-containing gas to the flow rate of the silicon-containing gas is greater than 0.65. A high-density plasma is generated from the gaseous mixture by applying a source RF power having a power density less than 12 W/cm2. A bias is applied to a substrate in the process chamber at a bias power density greater than 0.8 W/cm2 and less than 2.4 W/cm2. The fluorinated silicate glass layer is deposited onto the substrate using the high-density plasma.
    Type: Application
    Filed: September 5, 2001
    Publication date: March 13, 2003
    Applicant: Applied Materials, Inc.
    Inventors: Hichem M'Saad, Chad Peterson, Zhuang Li, Anchuan Wang, Farhad Moghadam