Abstract: One aspect of the present invention relates to a semiconductor circuit arrangement and to a method for producing the latter. One aspect of the invention is that, as a result of a connecting trench structure and an isolation trench structure of a semiconductor circuit being in direct spatial proximity with respect to one another, an additional capacitor device is formed. The capacitance of said capacitor device is connected as a usable capacitance for the semiconductor circuit and is connected to the latter.

Abstract: The invention relates to an electrically programmable memory cell comprising a memory transistor having a source and a drain zone and also a storage electrode and a control electrode, and a selection transistor having a source and a drain zone and also a control electrode, the drain zones of the storage and selection transistors being electrically conductively connected to one another. In this case, the drain zone of the selection transistor has a connection zone and an intermediate zone doped more weakly than the connection zone, the intermediate zone being arranged between the connection zone and a channel zone of the selection transistor and serving, during the programming operation, for taking up a programming voltage and thus for protecting a control electrode insulation layer of the selection transistor.

Abstract: The invention relates to an electrically programmable memory cell comprising a memory transistor having a source and a drain zone and also a storage electrode and a control electrode, and a selection transistor having a source and a drain zone and also a control electrode, the drain zones of the storage and selection transistors being electrically conductively connected to one another. In this case, the drain zone of the selection transistor has a connection zone and an intermediate zone doped more weakly than the connection zone, the intermediate zone being arranged between the connection zone and a channel zone of the selection transistor and serving, during the programming operation, for taking up a programming voltage and thus for protecting a control electrode insulation layer of the selection transistor.

Abstract: An integrated semiconductor diode arrangement is provided. The arrangement includes an anode region and a cathode region that are formed in a semiconductor material region. The anode region has an arrangement of alternately occurring and directly adjacent first and second anode zones, which alternate in their conductivity type. The anode region furthermore has a first particular anode zone of the second conductivity type, the lateral extent of which is comparatively larger than that of the further anode zones of the same conductivity type.

Abstract: A device for establishing an isolated perfusion including a pump arrangement, a venous catheter, and an arterial catheter, for establishing an artificial circulation in a target area of a human or animal body, which artificial circulation is isolated from the systemic circulation. The device has first means for feeding an analysis gas into the artificial circulation, and second means for monitoring whether a blood exchange takes place between the artificial circulation and the systemic circulation.