Patents by Inventor Andrew Clark

Andrew Clark has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11005231
    Abstract: Systems and methods are described herein to grow a layered structure. The layered structure comprises a first germanium substrate layer having a first lattice constant, a second layer that has a second lattice constant and is epitaxially grown over the first germanium substrate layer, wherein the second layer has a composite of a first constituent and a second constituent, and has a first ratio between the first constituent and the second constituent, and a third layer that has a third lattice constant and is epitaxially grown over the second layer, wherein the third layer has a composite of a third constituent and a fourth constituent, and has a second ratio between the third constituent and the fourth constituent, wherein the first ratio and the second ratio are selected such that the first lattice constant is between the second lattice constant and the third lattice constant.
    Type: Grant
    Filed: November 21, 2018
    Date of Patent: May 11, 2021
    Assignee: IQE pic
    Inventors: Andrew Clark, Rodney Pelzel, Andrew Johnson, Andrew Martin Joel, Aidan John Daly, Adam Christopher Jandl
  • Patent number: 11001373
    Abstract: A movable ballast system for an aircraft includes first and second ballast docks secured to the aircraft. The first ballast dock includes a first housing and a first ballast tray secured within the first housing. The first ballast tray includes a plurality of channels. The second ballast dock is positioned aft of a CG of the aircraft and includes a second housing and a second ballast tray secured within the second housing. The second ballast tray includes a plurality of channels. The movable ballast system includes a plurality of movable ballasts, each movable ballast of the plurality of movable ballasts being configured to fit within at least one channel of each of the plurality of channels of the first and second ballast trays.
    Type: Grant
    Filed: August 29, 2019
    Date of Patent: May 11, 2021
    Assignee: Bell Textron Inc.
    Inventors: Derek William Heard, Richard Theodore Perryman, Nathan Craig Clark, Joshua Andrew Emrich, Yann Lavallee, Ralph Michael Gannarelli
  • Patent number: 11005901
    Abstract: One or more data centers are selected to host an online conference. The selection of the data center is based on a set of metrics that are measured from ‘synthetic’ transactions. These synthetic transactions are sent between candidate data centers and the participants in the conference call in order to measure one or more performance metrics (e.g., link quality metrics such as delay, packet loss, etc.) These measured performance metrics are used to determine a centroid that represents the geometric center or ‘center of mass,’ of the link quality between participants and data centers. This ‘link quality centroid’ is used to select a subset of data centers as candidate data centers. The candidate data center with the best average performance metric(s) is selected as the data center to host the conference.
    Type: Grant
    Filed: April 22, 2019
    Date of Patent: May 11, 2021
    Assignee: Microsoft Technology Licensing, LLC
    Inventors: Amer Hassan, Bradford R. Clark, Gareth Lyndon Eadred Bridges, Russell Andrew Penar
  • Publication number: 20210133262
    Abstract: A method of purchasing tires includes providing a web site stored on a web server accessible from a computing device. The web site displays a page for a consumer, including instructions for locating a placard containing tire information, a request to take a photo of the placard and a request to upload the photo. Once the photo is uploaded, it is stored on the web server. An optical character recognition program is in communication with the web server and is used to analyze the photo. Characters in the photo corresponding to tire size information on the placard are identified. The identified tire size information is correlated in a database to a listing of pre-stored tire information to verify whether the identified tire size information is appropriate for the vehicle. A message is returned to the web site from the web server including the results of the identification and correlation.
    Type: Application
    Filed: August 12, 2020
    Publication date: May 6, 2021
    Inventors: Rodrigo do Vale Ciossani, Abhijit Ganguly, Wesley Conyers Clark, Thomas Andrew Slage
  • Patent number: 10923345
    Abstract: Systems and methods are described herein for growing epitaxial metal oxide as buffer for epitaxial III-V layers. A layer structure includes a base layer and a first rare earth oxide layer epitaxially grown over the base layer. The first rare earth oxide layer includes a first rare earth element and oxygen, and has a bixbyite crystal structure. The layer structure also includes a metal oxide layer epitaxially grown directly over the first rare earth oxide layer. The metal oxide layer includes a first cation element selected from Group III and oxygen, and has a bixbyite crystal structure.
    Type: Grant
    Filed: March 16, 2017
    Date of Patent: February 16, 2021
    Assignee: IQE plc
    Inventors: Rytis Dargis, Andrew Clark, Rodney Pelzel
  • Patent number: 10912759
    Abstract: Methods of treating a methicillin-resistant Staphylococcus aureus (MRSA) infection or a Staphylococcus pseudintermedius infection in subject in need thereof are provided, the methods comprising administering to the subject an effective amount of a topical gel composition comprising vitamin E d-alpha-tocopherol polyethylene glycol 1000 succinate (TPGS); and at least one lipophile. Compositions, methods of manufacture, and methods of use in inhibiting microbial growth are also provided.
    Type: Grant
    Filed: May 17, 2019
    Date of Patent: February 9, 2021
    Inventor: William Andrew Clark
  • Publication number: 20210020436
    Abstract: A layered structure for semiconductor application is described herein. The layered structure includes a starting material and a fully depleted porous layer formed over the starting material with high resistivity. In some embodiments, the layered structure further includes epitaxial layer grown over the fully depleted porous layer. Additionally, a process of making the layered structure including forming the fully depleted porous layer and epitaxial layer grown over the porous layer is described herein.
    Type: Application
    Filed: January 14, 2020
    Publication date: January 21, 2021
    Inventors: Richard Hammond, Drew Nelson, Alan Gott, Rodney Pelzel, Andrew Clark
  • Publication number: 20210005720
    Abstract: Layered structures described herein include electronic devices with 2-dimensional electron gas between polar-oriented cubic rare-earth oxide layers on a non-polar semiconductor. Layered structure includes a semiconductor device, comprising a III-N layer or rare-earth layer, a polar rare-earth oxide layer grown over the III-N layer or rare-earth layer, a gate terminal deposited or grown over the polar rare-earth oxide layer, a source terminal that is deposited or epitaxially grown over the layer, and a drain terminal that is deposited or grown over the layer.
    Type: Application
    Filed: February 15, 2019
    Publication date: January 7, 2021
    Inventors: Rytis Dargis, Andrew Clark, Richard Hammond, Rodney Pelzel, Michael Lebby
  • Patent number: 10880995
    Abstract: A printed circuit board (PCB) with at least one mechanical stress relief zone and at least one electrical component zone, wherein the at least one mechanical stress relief zone allows the PCB to flex proximate the at least one mechanical stress relief zone of the PCB without compromising the at least one electrical component zone.
    Type: Grant
    Filed: November 2, 2018
    Date of Patent: December 29, 2020
    Assignee: 2449049 Ontario Inc.
    Inventors: Andrew Clark Baird Aubert, Sebastian Durzynski, Jonathan William Perry
  • Publication number: 20200388489
    Abstract: Structures having an epitaxial metal layer, a semiconductor layer, or both, may be formed as part of a first process in a first chamber, and then undergo subsequent processing in a second chamber. A modified device may be formed from a pre-formed device by application of further layers in a second process. One or more layers may be formed directly over the device, formed directly over a seed layer formed over the device, or formed over a substrate that is subsequently bonded and partially cleaved from the device. A seed layer may include a lattice constant transition, chemical transition, or other suitable transition between the device and an epitaxial layer. A cleave layer may include a porous layer configured to fracture at a relatively lower shear loading than the rest of the structure, thus providing a predictable separation plane.
    Type: Application
    Filed: June 6, 2019
    Publication date: December 10, 2020
    Inventors: Rodney Pelzel, Andrew Clark, Rytis Dargis
  • Patent number: 10847375
    Abstract: A method for selectively etching a dielectric layer with respect to an epitaxial layer or metal-based hardmask is provided. The method comprises performing a plurality of cycles. Each cycle comprises a deposition phase and an activation phase. The deposition phase comprises flowing a deposition gas, wherein the deposition gas comprises helium and a hydrofluorocarbon or fluorocarbon, forming the deposition gas into a plasma to effect a fluorinated polymer deposition, and stopping the flow of the deposition gas. The activation phase comprises flowing an activation gas comprising an ion bombardment gas, forming the activation gas into a plasma, providing an activation bias to cause ion bombardment of the fluorinated polymer deposition, wherein the ion bombardment activates fluorine from the fluorinated polymer deposition to etch the dielectric layer, and stopping the flow of the activation gas.
    Type: Grant
    Filed: June 26, 2018
    Date of Patent: November 24, 2020
    Assignee: Lam Research Corporation
    Inventors: Chia-Chun Wang, Eric Hudson, Andrew Clark Serino, Nerissa Draeger, Zhonghao Zhang
  • Patent number: 10825912
    Abstract: Systems and methods are described herein to include an epitaxial metal layer between a rare earth oxide and a semiconductor layer. Systems and methods are described to grow a layered structure, comprising a substrate, a first rare earth oxide layer epitaxially grown over the substrate, a first metal layer epitaxially grown over the rare earth oxide layer, and a first semiconductor layer epitaxially grown over the first metal layer.
    Type: Grant
    Filed: November 1, 2018
    Date of Patent: November 3, 2020
    Assignee: IQE plc
    Inventors: Rodney Pelzel, Andrew Clark, Rytis Dargis, Patrick Chin, Michael Lebby
  • Publication number: 20200266276
    Abstract: A layered structure for semiconductor application is described herein. The layered structure includes III-V semiconductor and uses pnictide nanocomposites to control lattice distortion in a series of layers. The distortion is tuned to bridge lattice mismatch between binary III-V semiconductors. In some embodiments, the layered structure further includes dislocation filters.
    Type: Application
    Filed: February 5, 2020
    Publication date: August 20, 2020
    Inventors: Andrew Clark, Rodney Pelzel, Mukul Debnath, Rytis Dargis, Robert Yanka
  • Publication number: 20200168454
    Abstract: Systems and methods are described herein for growing epitaxial metal oxide as buffer for epitaxial III-V layers. A layer structure includes a base layer and a first rare earth oxide layer epitaxially grown over the base layer. The first rare earth oxide layer includes a first rare earth element and oxygen, and has a bixbyite crystal structure. The layer structure also includes a metal oxide layer epitaxially grown directly over the first rare earth oxide layer. The metal oxide layer includes a first cation element selected from Group III and oxygen, and has a bixbyite crystal structure.
    Type: Application
    Filed: March 16, 2017
    Publication date: May 28, 2020
    Inventors: Rytis Dargis, Andrew Clark, Rodney Pelzel
  • Publication number: 20200161417
    Abstract: In view of the high-temperature issues in III-N layer growth process, embodiments described herein use layered structure including a rare earth oxide (REO) or rare earth nitride (REN) buffer layer and a polymorphic III-N-RE transition layer to transit from a REO layer to a III-N layer. In some embodiments, the piezoelectric coefficient of III-N layer is increased by introduction of additional strain in the layered structure. The polymorphism of RE-III-N nitrides can then be used for lattice matching with the III-N layer.
    Type: Application
    Filed: November 19, 2019
    Publication date: May 21, 2020
    Inventors: Rytis Dargis, Andrew Clark, Rodney Pelzel, Michael Lebby, Robert Yanka
  • Publication number: 20200127464
    Abstract: A hybrid power backup system having at least one battery for powering at least one external load; at least one capacitor for powering a controller configured to control power provided from the battery to the at least one external load and to control discharge/charge cycles of the battery.
    Type: Application
    Filed: October 21, 2019
    Publication date: April 23, 2020
    Inventors: Marc James Gagne, Andrew Clark Baird Aubert
  • Patent number: 10615141
    Abstract: A structure can include a III-N layer with a first lattice constant, a first rare earth pnictide layer with a second lattice constant epitaxially grown over the III-N layer, a second rare earth pnictide layer with a third lattice constant epitaxially grown over the first rare earth pnictide layer, and a semiconductor layer with a fourth lattice constant epitaxially grown over the second rare earth pnictide layer. A first difference between the first lattice constant and the second lattice constant and a second difference between the third lattice constant and the fourth lattice constant are less than one percent.
    Type: Grant
    Filed: June 2, 2017
    Date of Patent: April 7, 2020
    Assignee: IQE plc
    Inventors: Andrew Clark, Rytis Dargis, Michael Lebby, Rodney Pelzel
  • Patent number: 10605987
    Abstract: Systems and methods describe growing RE-based integrated photonic and electronic layered structures on a single substrate. The layered structure comprises a substrate, an epi-twist rare earth oxide layer over a first region of the substrate, and a rare earth pnictide layer over a second region of the substrate, wherein the first region and the second region are non-overlapping.
    Type: Grant
    Filed: January 18, 2019
    Date of Patent: March 31, 2020
    Assignee: IQE plc
    Inventors: Andrew Clark, Rich Hammond, Rytis Dargis, Michael Lebby, Rodney Pelzel
  • Patent number: 10573686
    Abstract: Proposed is a layer structure (1100, 1030) comprising a crystalline piezoelectric III-N layer (1110, 1032) epitaxially grown over a metal layer which is epitaxially grown over a rare earth oxide layer on a semiconductor (1102, 1002). The rare earth oxide layer includes at least two discrete portions (1104, 1004), and the metal layer includes at least one metal portion (1108, 1006) that partially overlaps adjacent discrete portions, preferably forming a bridge over an air gap (1008), particularly suitable for RF filters.
    Type: Grant
    Filed: June 19, 2017
    Date of Patent: February 25, 2020
    Assignee: IQE plc
    Inventors: Wang Nang Wang, Andrew Clark, Rytis Dargis, Michael Lebby, Rodney Pelzel
  • Patent number: D900511
    Type: Grant
    Filed: September 30, 2017
    Date of Patent: November 3, 2020
    Assignee: Sonos, Inc.
    Inventors: Ran Feder, Andrew Clark, Julia Jeanguenat, Mike Ely