Patents by Inventor Anthony J. Lochtefeld

Anthony J. Lochtefeld has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Diode-based devices and methods for making the same
    Patent number: 9231073
    Abstract: In accordance with an embodiment, a diode comprises a substrate, a dielectric material including an opening that exposes a portion of the substrate, the opening having an aspect ratio of at least 1, a bottom diode material including a lower region disposed at least partly in the opening and an upper region extending above the opening, the bottom diode material comprising a semiconductor material that is lattice mismatched to the substrate, a top diode material proximate the upper region of the bottom diode material, and an active diode region between the top and bottom diode materials, the active diode region including a surface extending away from the top surface of the substrate.
    Type: Grant
    Filed: March 31, 2015
    Date of Patent: January 5, 2016
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventor: Anthony J. Lochtefeld
  • Strained Channel Dynamic Random Access Memory Devices
    Publication number: 20150380414
    Abstract: DRAM trench capacitors formed by, inter alia, deposition of conductive material into a trench or doping the semiconductor region in which the trench is defined.
    Type: Application
    Filed: September 11, 2015
    Publication date: December 31, 2015
    Inventors: Mayank T. Bulsara, Anthony J. Lochtefeld, Matthew T. Currie
  • Lattice-mismatched semiconductor structures with reduced dislocation defect densities and related methods for device fabrication
    Patent number: 9219112
    Abstract: Fabrication of monolithic lattice-mismatched semiconductor heterostructures with limited area regions having upper portions substantially exhausted of threading dislocations, as well as fabrication of semiconductor devices based on such lattice-mismatched heterostructures.
    Type: Grant
    Filed: March 2, 2015
    Date of Patent: December 22, 2015
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Anthony J. Lochtefeld, Matthew T. Currie, Zhiyuan Cheng, James Fiorenza, Glyn Braithwaite, Thomas A. Langdo
  • SEMICONDUCTOR SENSOR STRUCTURES WITH REDUCED DISLOCATION DEFECT DENSITIES AND RELATED METHODS FOR THE SAME
    Publication number: 20150325619
    Abstract: Non-silicon based semiconductor devices are integrated into silicon fabrication processes by using aspect-ratio-trapping materials. Non-silicon light-sensing devices in a least a portion of a crystalline material can output electrons generated by light absorption therein. Exemplary light-sensing devices can have relatively large micron dimensions. As an exemplary application, complementary-metal-oxide-semiconductor photodetectors are formed on a silicon substrate by incorporating an aspect-ratio-trapping technique.
    Type: Application
    Filed: June 30, 2015
    Publication date: November 12, 2015
    Inventors: Zhiyuan Cheng, James Fiorenza, Calvin Sheen, Anthony J. Lochtefeld
  • Lattice-mismatched semiconductor structures with reduced dislocation defect densities and related methods for device fabrication
    Patent number: 9153645
    Abstract: A method of forming a semiconductor structure includes forming an opening in a dielectric layer, forming a recess in an exposed part of a substrate, and forming a lattice-mismatched crystalline semiconductor material in the recess and opening.
    Type: Grant
    Filed: July 25, 2008
    Date of Patent: October 6, 2015
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Jizhong Li, Anthony J. Lochtefeld
  • Strained channel dynamic random access memory devices
    Patent number: 9153591
    Abstract: DRAM trench capacitors formed by, inter alia, deposition of conductive material into a trench or doping the semiconductor region in which the trench is defined.
    Type: Grant
    Filed: November 5, 2014
    Date of Patent: October 6, 2015
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Mayank T. Bulsara, Matthew T. Currie, Anthony J. Lochtefeld
  • Diode-Based Devices and Methods for Making the Same
    Publication number: 20150255566
    Abstract: In accordance with an embodiment, a diode comprises a substrate, a dielectric material including an opening that exposes a portion of the substrate, the opening having an aspect ratio of at least 1, a bottom diode material including a lower region disposed at least partly in the opening and an upper region extending above the opening, the bottom diode material comprising a semiconductor material that is lattice mismatched to the substrate, a top diode material proximate the upper region of the bottom diode material, and an active diode region between the top and bottom diode materials, the active diode region including a surface extending away from the top surface of the substrate.
    Type: Application
    Filed: March 31, 2015
    Publication date: September 10, 2015
    Inventor: Anthony J. Lochtefeld
  • Methods for Forming Semiconductor Device Structures
    Publication number: 20150243788
    Abstract: The benefits of strained semiconductors are combined with silicon-on-insulator approaches to substrate and device fabrication.
    Type: Application
    Filed: May 8, 2015
    Publication date: August 27, 2015
    Inventors: Anthony J. Lochtefeld, Thomas A. Langdo, Richard Hammond, Matthew T. Currie, Eugene A. Fitzgerald
  • Semiconductor sensor structures with reduced dislocation defect densities
    Patent number: 9105549
    Abstract: Non-silicon based semiconductor devices are integrated into silicon fabrication processes by using aspect-ratio-trapping materials. Non-silicon light-sensing devices in a least a portion of a crystalline material can output electrons generated by light absorption therein. Exemplary light-sensing devices can have relatively large micron dimensions. As an exemplary application, complementary-metal-oxide-semiconductor photodetectors are formed on a silicon substrate by incorporating an aspect-ratio-trapping technique.
    Type: Grant
    Filed: July 16, 2014
    Date of Patent: August 11, 2015
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Zhiyuan Cheng, James Fiorenza, Calvin Sheen, Anthony J. Lochtefeld
  • Semiconductor Diodes Fabricated by Aspect Ratio Trapping with Coalesced Films
    Publication number: 20150221546
    Abstract: A method of forming a photonic device that comprises a substrate and a dielectric material including two or more openings that expose a portion of the substrate, the two or more openings each having an aspect ratio of at least 1. A bottom diode material comprising a compound semiconductor material that is lattice mismatched to the substrate occupies the two or more openings and is coalesced above the two or more openings to form the bottom diode region. The method may further include forming a top diode material and an active diode region between the top and bottom diode materials.
    Type: Application
    Filed: April 13, 2015
    Publication date: August 6, 2015
    Inventor: Anthony J. Lochtefeld
  • Lattice-Mismatched Semiconductor Structures with Reduced Dislocation Defect Densities and Related Methods for Device Fabrication
    Publication number: 20150200246
    Abstract: Fabrication of monolithic lattice-mismatched semiconductor heterostructures with limited area regions having upper portions substantially exhausted of threading dislocations, as well as fabrication of semiconductor devices based on such lattice-mismatched heterostructures.
    Type: Application
    Filed: March 2, 2015
    Publication date: July 16, 2015
    Inventors: Anthony J. Lochtefeld, Matthew T. Currie, Zhiyuan Cheng, James Fiorenza, Glyn Braithwaite, Thomas A. Langdo
  • Methods for forming semiconductor device structures
    Patent number: 9064930
    Abstract: The benefits of strained semiconductors are combined with silicon-on-insulator approaches to substrate and device fabrication.
    Type: Grant
    Filed: October 15, 2013
    Date of Patent: June 23, 2015
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Thomas A. Langdo, Anthony J. Lochtefeld, Richard Hammond, Matthew T. Currie, Eugene A. Fitzgerald
  • Diode-based devices and methods for making the same
    Patent number: 9040331
    Abstract: In accordance with an embodiment, a diode comprises a substrate, a dielectric material including an opening that exposes a portion of the substrate, the opening having an aspect ratio of at least 1, a bottom diode material including a lower region disposed at least partly in the opening and an upper region extending above the opening, the bottom diode material comprising a semiconductor material that is lattice mismatched to the substrate, a top diode material proximate the upper region of the bottom diode material, and an active diode region between the top and bottom diode materials, the active diode region including a surface extending away from the top surface of the substrate.
    Type: Grant
    Filed: July 20, 2012
    Date of Patent: May 26, 2015
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventor: Anthony J. Lochtefeld
  • Semiconductor diodes fabricated by aspect ratio trapping with coalesced films
    Patent number: 9029908
    Abstract: A photonic device comprises a substrate and a dielectric material including two or more openings that expose a portion of the substrate, the two or more openings each having an aspect ratio of at least 1. A bottom diode material comprising a compound semiconductor material that is lattice mismatched to the substrate occupies the two or more openings and is coalesced above the two or more openings to form the bottom diode region. The device further includes a top diode material and an active diode region between the top and bottom diode materials.
    Type: Grant
    Filed: May 27, 2014
    Date of Patent: May 12, 2015
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventor: Anthony J. Lochtefeld
  • Lattice-Mismatched Semiconductor Structures and Related Methods for Device Fabrication
    Publication number: 20150115320
    Abstract: Lattice-mismatched materials having configurations that trap defects within sidewall-containing structures.
    Type: Application
    Filed: October 3, 2014
    Publication date: April 30, 2015
    Inventor: Anthony J. Lochtefeld
  • Lattice-mismatched semiconductor structures with reduced dislocation defect densities and related methods for device fabrication
    Patent number: 8987028
    Abstract: Fabrication of monolithic lattice-mismatched semiconductor heterostructures with limited area regions having upper portions substantially exhausted of threading dislocations, as well as fabrication of semiconductor devices based on such lattice-mismatched heterostructures.
    Type: Grant
    Filed: June 24, 2014
    Date of Patent: March 24, 2015
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Anthony J. Lochtefeld, Matthew T. Currie, Zhiyuan Cheng, James Fiorenza, Glyn Braithwaite, Thomas A. Langdo
  • Strained Channel Dynamic Random Access Memory Devices
    Publication number: 20150060972
    Abstract: DRAM trench capacitors formed by, inter alia, deposition of conductive material into a trench or doping the semiconductor region in which the trench is defined.
    Type: Application
    Filed: November 5, 2014
    Publication date: March 5, 2015
    Inventors: Mayank T. Bulsara, Matthew T. Currie, Anthony J. Lochtefeld
  • Lattice-Mismatched Semiconductor Structures with Reduced Dislocation Defect Densities and Related Methods for Device Fabrication
    Publication number: 20140374798
    Abstract: Fabrication of monolithic lattice-mismatched semiconductor heterostructures with limited area regions having upper portions substantially exhausted of threading dislocations, as well as fabrication of semiconductor devices based on such lattice-mismatched heterostructures.
    Type: Application
    Filed: June 24, 2014
    Publication date: December 25, 2014
    Inventors: Anthony J. Lochtefeld, Matthew T. Currie, Zhiyuan Cheng, James Fiorenza, Glyn Braithwaite, Thomas A. Langdo
  • Defect Reduction Using Aspect Ratio Trapping
    Publication number: 20140342536
    Abstract: Lattice-mismatched epitaxial films formed proximate non-crystalline sidewalls. Embodiments of the invention include formation of facets that direct dislocations in the films to the sidewalls.
    Type: Application
    Filed: July 30, 2014
    Publication date: November 20, 2014
    Inventors: Jie Bai, Anthony J. Lochtefeld, Ji-Soo Park
  • Strained channel dynamic random access memory devices
    Patent number: 8890226
    Abstract: DRAM trench capacitors formed by, inter alia, deposition of conductive material into a trench or doping the semiconductor region in which the trench is defined.
    Type: Grant
    Filed: May 2, 2013
    Date of Patent: November 18, 2014
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Mayank T. Bulsara, Matthew T. Currie, Anthony J. Lochtefeld