Abstract: A system, device and method are provided for accelerating transfers via intermediaries. The illustrative method includes receiving a request to perform a transfer of funds and routing the first request through an account management service to a payment service. The method can include populating a second request to the interbank intermediary to initiate the transfer, and receiving, at the payment service, confirmation of transfer from the interbank intermediary, the received funds being routed by the payment service to a multi-tenant account. The method can include generating an event for the account management service that represents that the confirmation has been received and initiating, via the account management service, completion of the transfer to the first account by request to the multi-tenant account. The method can include generating, by the account management service, an event to update a distribution subsystem of the completed transfer.

Abstract: A system, device and method are provided for at least in part automating remediation in an enterprise system. An illustrative method includes receiving a request to perform an action, the action requiring at least one of a plurality of subsystems to be completed. The plurality of subsystems include employee and customer subsystems. The method includes transmitting an event, based on the request, to the at least one of a plurality of subsystems via an event subsystem. The method includes with an automated remediation platform: monitoring events sent from the at least one of a plurality of subsystems to the event subsystem to detect a failure; and in response to detecting the failure, generating a trigger event for consumption by the event subsystem. The method includes in response to receiving the trigger event, transmitting a remediation event for consumption by the at least one of a plurality of subsystems.

Abstract: Methods of making such compounds, powders, and cathode active materials are described. The powders are formed of particles with specific properties: a particle size distribution with a D50 ranging from 10 ?m to 20 ?m, a D10 less than 8 ?m, and a D99 of the particles ranges from 25 ?m to 35 ?m. The final compound is represented by the Formula Li?(Co1-x-y-zMnxMezAly)O?, wherein 0.95<?<1.05, x?1.00, 0<y?0.04, 0<z?0.050, and ??2.

Abstract: Often when there is a glare on a display screen the user may be able to mitigate the glare by tilting or otherwise moving the screen or changing their viewing position. However, when driving a car there are limited options for overcoming glares on the dashboard, especially when you are driving for a long distance in the same direction. Embodiments are directed to eliminating such glare. Other embodiments are related to mixed reality (MR) and filling in occluded areas.

Abstract: Provided herein are methods and materials for detecting and/or treating subject (e.g., a human) having cancer. In some embodiments, methods and materials for identifying a subject as having cancer (e.g., a localized cancer) are provided in which the presence of member(s) of two or more classes of biomarkers are detected. In some embodiments, methods and materials for identifying a subject as having cancer (e.g., a localized cancer) are provided in which the presence of member(s) of at least one class of biomarkers and the presence of aneuploidy are detected. In some embodiments, methods described herein provide increased sensitivity and/or specificity in the detection of cancer in a subject (e.g. a human).

Abstract: Compounds, compositions, and methods for use in inhibiting the E3 enzyme Cbl-b in the ubiquitin proteasome pathway are disclosed. The compounds, compositions, and methods can be used to modulate the immune system, to treat diseases amenable to immune system modulation, and for treatment of cells in vivo, in vitro, or ex vivo. Also disclosed are pharmaceutical compositions comprising a Cbl-b inhibitor and a cancer vaccine, as well as methods for treating cancer using a Cbl-b inhibitor and a cancer vaccine; and pharmaceutical compositions comprising a Cbl-b inhibitor and an oncolytic virus, as well as methods for treating cancer using a Cbl-b inhibitor and an oncolytic virus.

Abstract: Systems and methods are described herein to control brightness based on image content or other inputs to a display system. A dual-control system may integrate both slow control operations and fast control operations into a cohesive brightness management system. By using both shorter-term (e.g., fast control) and longer-term (e.g., slow control) brightness adjustment operations, the electronic device may quickly respond to high luminance and high brightness situations that may cause burn-in into the display, image artifacts, or other damage. Responding quickly to these high consumption situations may prevent damage or perceivable upset to an ongoing process, among other benefits.

Abstract: The disclosure provides a plurality of particles. Each particle may include a material comprising 0.95 to 1.30 mole fraction Li, at least 0.60 and less than 1.00 mole fraction Co, up to 10,000 ppm Al, 1.90 to 2.10 mole fraction O, and up to 0.30 mole fraction M, where M is at least one element selected from B, Na, Mg, P, Ti, Ca, V, Cr, Fe, Mn, Ni, Cu, Zn, Al, Sc, Y, Ga, Zr, Ru, Mo, La, Si, Nb, Ge, In, Sn, Sb, Te, and Ce. Each particle may also include a surface composition comprising a mixture of LiF and a metal fluoride. An amount of fluorine (F) is greater than 0 and less than or equal to 5000 ppm. The metal fluoride comprises a material selected from the group consisting of AlF3, CaF2, MgF2, and LaF2. The surface composition may also include a metal oxide comprising a material selected from the group consisting of TiO2, MgO, La2O3, CaO, and Al2O3. An amount of the metal oxide is greater than 0 and less than or equal to 20000 ppm.

Abstract: Compounds, tautomers and pharmaceutically acceptable salts of the compounds are disclosed, wherein the compounds have the structure of Formula Ia, as defined in the specification. In an embodiment, a pharmaceutical composition can be in a liquid dosage form and can comprise a therapeutically effective amount of the compound or a pharmaceutically acceptable salt thereof as an adjuvant and a therapeutic agent. In another embodiment, a method of adjuvant treating a disorder or condition can comprising administering the pharmaceutical composition to a patient.

Abstract: Compounds, particles, and cathode active materials that can be used in lithium ion batteries are described herein. Methods of making such compounds, powders, and cathode active materials are described. The particles have a particle size distribution with a D50 ranging from 10 ?m to 20 ?m.

Abstract: A cathode active material includes a plurality of cathode active compound particles and a coating disposed over each of the cathode active compound particles. The coating includes a lithium (Li)-ion conducting oxide containing lanthanum (La) and titanium (Ti).

Abstract: Provided herein, inter alia, are compositions comprising one or more biologically pure strains of bacteria as well as methods of making and using the same to treat and/or prevent one or more obesity related disorders in a subject in need thereof.

Abstract: An eyeglasses frame and nose pad assembly has an eyeglasses frame and two nose pads. The eyeglasses frame has two rims having a combining portion. The combining portion has a main body and two recesses. The main body has a first primary engaging portion and a second primary engaging portion. The two nose pads are detachably mounted on the two combining portions respectively. Each of the nose pads is flexible and has an abutting portion and two protrusions. The abutting portion has a second secondary engaging portion, and the two protrusions have a first secondary engaging portion. The nose pad is mounted on the combining portion via multiple engaging structures, the main body extending on the abutting portion, and the recess engaging with the protrusion, increasing comfort of wearing the eyeglasses frame and nose pad assembly, slip-resistance, support performance, and a lifespan of the eyeglasses frame and nose pad assembly.

Abstract: A method of forming a wafer-bonding structure includes a wafer-bonding step, a through silicon via (TSV) forming step, and a forming bonding pad step. In the wafer-bonding step, at least two wafers are corresponding to and bonded to each other by bonding surfaces thereof. In the TSV forming step, a TSV structure is formed on at least one side of a seal ring structure of one of the wafers, a conductive filler is disposed in the TSV structure, and the TSV structure is overlapped the side of one of the seal ring structure of one of the wafers and a portion of a seal ring structure of another one of the wafers. In the forming bonding pad step, a bonding pad is formed on an outer surface which is relative to the bonding surface of the wafer with the TSV structure, so as to form the wafer-bonding structure.

Abstract: A method of forming a FinFET stack gate memory includes a nitride film forming step, a nitride film is formed on a memory cell area with a shallow trench isolation (STI) structure; a stripping step, a portion of the nitride film is stripped, the other portion of the nitride film is remained at the STI structure, and a STI oxide is disposed in the STI structure; a floating gate (FG) structure forming step, a tunnel oxide is disposed, and a first polysilicon is disposed to form a FG structure; an oxide-nitride-oxide (ONO) layer disposing step, a portion of the STI oxide is stripped, and an ONO layer is disposed; a removing step, a portion of the ONO layer is removed; a control gate (CG) structure forming step, a portion of the FG structure is removed, and a second polysilicon is disposed to form a CG structure.

Abstract: A method of forming a FinFET stack gate memory includes a nitride film forming step, a nitride film is formed on a memory cell area with a shallow trench isolation (STI) structure; a stripping step, a portion of the nitride film is stripped, the other portion of the nitride film is remained at the STI structure, and a STI oxide is disposed in the STI structure; a floating gate (FG) structure forming step, a tunnel oxide is disposed, and a first polysilicon is disposed to form a FG structure; an oxide-nitride-oxide (ONO) layer disposing step, a portion of the STI oxide is stripped, and an ONO layer is disposed; a removing step, a portion of the ONO layer is removed; a control gate (CG) structure forming step, a portion of the FG structure is removed, and a second polysilicon is disposed to form a CG structure.

Abstract: A method of forming a wafer-bonding structure includes a wafer-bonding step, a through silicon via (TSV) forming step, and a forming bonding pad step. In the wafer-bonding step, at least two wafers are corresponding to and bonded to each other by bonding surfaces thereof. In the TSV forming step, a TSV structure is formed on at least one side of a seal ring structure of one of the wafers, a conductive filler is disposed in the TSV structure, and the TSV structure is overlapped the side of one of the seal ring structure of one of the wafers and a portion of a seal ring structure of another one of the wafers. In the forming bonding pad step, a bonding pad is formed on an outer surface which is relative to the bonding surface of the wafer with the TSV structure, so as to form the wafer-bonding structure.

Abstract: A method of forming a wafer-bonding structure includes a wafer-bonding step, a through silicon via (TSV) forming step, and a forming bonding pad step. In the wafer-bonding step, at least two wafers are corresponding to and bonded to each other by bonding surfaces thereof. In the TSV forming step, a TSV structure is formed on at least one side of a seal ring structure of one of the wafers, a conductive filler is disposed in the TSV structure, and the TSV structure is overlapped the side of one of the seal ring structure of one of the wafers and a portion of a seal ring structure of another one of the wafers. In the forming bonding pad step, a bonding pad is formed on an outer surface which is relative to the bonding surface of the wafer with the TSV structure, so as to form the wafer-bonding structure.

Abstract: A method of forming a FinFET stack gate memory includes a nitride film forming step, a nitride film is formed on a memory cell area with a shallow trench isolation (STI) structure; a stripping step, a portion of the nitride film is stripped, the other portion of the nitride film is remained at the STI structure, and a STI oxide is disposed in the STI structure; a floating gate (FG) structure forming step, a tunnel oxide is disposed, and a first polysilicon is disposed to form a FG structure; an oxide-nitride-oxide (ONO) layer disposing step, a portion of the STI oxide is stripped, and an ONO layer is disposed; a removing step, a portion of the ONO layer is removed; a control gate (CG) structure forming step, a portion of the FG structure is removed, and a second polysilicon is disposed to form a CG structure.

Abstract: Goggles with a ventilation structure have a frame, a lens, and a strap. The frame has multiple ventilation portions formed on an inner peripheral surface of the frame. The lens is mounted on the frame and has multiple through holes disposed along a peripheral edge of the lens and respectively communicating with the ventilation portions. The strap has two ends respectively connected to two opposite sides of the frame. Air outside the goggles can ventilate a space defined between the lens and a face of a wearer via the ventilation portions and the through holes, so as to dissipate heat accumulated in the space and to prevent the lens from fogging. Formation of the ventilation portions and the through holes does not require expanding a shape of the frame of the goggles. Thus, the goggles have compact volume and light weight and are comfortable for wearing.