Abstract: An eyeglasses frame and nose pad assembly has an eyeglasses frame and two nose pads. The eyeglasses frame has two rims having a combining portion. The combining portion has a main body and two recesses. The main body has a first primary engaging portion and a second primary engaging portion. The two nose pads are detachably mounted on the two combining portions respectively. Each of the nose pads is flexible and has an abutting portion and two protrusions. The abutting portion has a second secondary engaging portion, and the two protrusions have a first secondary engaging portion. The nose pad is mounted on the combining portion via multiple engaging structures, the main body extending on the abutting portion, and the recess engaging with the protrusion, increasing comfort of wearing the eyeglasses frame and nose pad assembly, slip-resistance, support performance, and a lifespan of the eyeglasses frame and nose pad assembly.

Abstract: A method of forming a wafer-bonding structure includes a wafer-bonding step, a through silicon via (TSV) forming step, and a forming bonding pad step. In the wafer-bonding step, at least two wafers are corresponding to and bonded to each other by bonding surfaces thereof. In the TSV forming step, a TSV structure is formed on at least one side of a seal ring structure of one of the wafers, a conductive filler is disposed in the TSV structure, and the TSV structure is overlapped the side of one of the seal ring structure of one of the wafers and a portion of a seal ring structure of another one of the wafers. In the forming bonding pad step, a bonding pad is formed on an outer surface which is relative to the bonding surface of the wafer with the TSV structure, so as to form the wafer-bonding structure.

Abstract: A method of forming a FinFET stack gate memory includes a nitride film forming step, a nitride film is formed on a memory cell area with a shallow trench isolation (STI) structure; a stripping step, a portion of the nitride film is stripped, the other portion of the nitride film is remained at the STI structure, and a STI oxide is disposed in the STI structure; a floating gate (FG) structure forming step, a tunnel oxide is disposed, and a first polysilicon is disposed to form a FG structure; an oxide-nitride-oxide (ONO) layer disposing step, a portion of the STI oxide is stripped, and an ONO layer is disposed; a removing step, a portion of the ONO layer is removed; a control gate (CG) structure forming step, a portion of the FG structure is removed, and a second polysilicon is disposed to form a CG structure.

Abstract: A method of forming a FinFET stack gate memory includes a nitride film forming step, a nitride film is formed on a memory cell area with a shallow trench isolation (STI) structure; a stripping step, a portion of the nitride film is stripped, the other portion of the nitride film is remained at the STI structure, and a STI oxide is disposed in the STI structure; a floating gate (FG) structure forming step, a tunnel oxide is disposed, and a first polysilicon is disposed to form a FG structure; an oxide-nitride-oxide (ONO) layer disposing step, a portion of the STI oxide is stripped, and an ONO layer is disposed; a removing step, a portion of the ONO layer is removed; a control gate (CG) structure forming step, a portion of the FG structure is removed, and a second polysilicon is disposed to form a CG structure.

Abstract: A method of forming a wafer-bonding structure includes a wafer-bonding step, a through silicon via (TSV) forming step, and a forming bonding pad step. In the wafer-bonding step, at least two wafers are corresponding to and bonded to each other by bonding surfaces thereof. In the TSV forming step, a TSV structure is formed on at least one side of a seal ring structure of one of the wafers, a conductive filler is disposed in the TSV structure, and the TSV structure is overlapped the side of one of the seal ring structure of one of the wafers and a portion of a seal ring structure of another one of the wafers. In the forming bonding pad step, a bonding pad is formed on an outer surface which is relative to the bonding surface of the wafer with the TSV structure, so as to form the wafer-bonding structure.

Abstract: A method of forming a wafer-bonding structure includes a wafer-bonding step, a through silicon via (TSV) forming step, and a forming bonding pad step. In the wafer-bonding step, at least two wafers are corresponding to and bonded to each other by bonding surfaces thereof. In the TSV forming step, a TSV structure is formed on at least one side of a seal ring structure of one of the wafers, a conductive filler is disposed in the TSV structure, and the TSV structure is overlapped the side of one of the seal ring structure of one of the wafers and a portion of a seal ring structure of another one of the wafers. In the forming bonding pad step, a bonding pad is formed on an outer surface which is relative to the bonding surface of the wafer with the TSV structure, so as to form the wafer-bonding structure.

Abstract: A method of forming a FinFET stack gate memory includes a nitride film forming step, a nitride film is formed on a memory cell area with a shallow trench isolation (STI) structure; a stripping step, a portion of the nitride film is stripped, the other portion of the nitride film is remained at the STI structure, and a STI oxide is disposed in the STI structure; a floating gate (FG) structure forming step, a tunnel oxide is disposed, and a first polysilicon is disposed to form a FG structure; an oxide-nitride-oxide (ONO) layer disposing step, a portion of the STI oxide is stripped, and an ONO layer is disposed; a removing step, a portion of the ONO layer is removed; a control gate (CG) structure forming step, a portion of the FG structure is removed, and a second polysilicon is disposed to form a CG structure.

Abstract: Goggles with a ventilation structure have a frame, a lens, and a strap. The frame has multiple ventilation portions formed on an inner peripheral surface of the frame. The lens is mounted on the frame and has multiple through holes disposed along a peripheral edge of the lens and respectively communicating with the ventilation portions. The strap has two ends respectively connected to two opposite sides of the frame. Air outside the goggles can ventilate a space defined between the lens and a face of a wearer via the ventilation portions and the through holes, so as to dissipate heat accumulated in the space and to prevent the lens from fogging. Formation of the ventilation portions and the through holes does not require expanding a shape of the frame of the goggles. Thus, the goggles have compact volume and light weight and are comfortable for wearing.

Abstract: Provided is an eyewear component with a replaceable lens, comprising a lens, a first buckle and a second buckle. The lens has a first end and a second end, the first end has an opening, and the second end has an elongated hole and a notch; the first buckle has a fixed element detachably received in the opening of the first end, and the fixed element has a head portion and a neck portion; the second buckle has an upper buckled portion and a lower buckled portion, the upper buckled portion and the lower buckled portion are detachably received in the elongated hole and the notch respectively. Therefore, the lens is not only easy to be buckled to the first buckle and the second buckle, but also easy to be detached for changing the lens.

Abstract: Disclosed is an effective programming method for non-volatile flash memory including memory cells, each formed of a select transistor and a floating transistor. The method includes imposing a positive voltage onto a control gate of the floating transistor as a word line, supplying a zero voltage to a triple well, a deep N well, and a select gate of the select transistor to turn off the select transistor, and finally providing a moderate positive voltage to a drain of the control transistor. Owing to the junction band-to-band tunneling effect, the electron of the hole-electron pair generated between the junction of the bit line and the triple well leaps to the floating gate of the floating transistor driven by the positive electric field to form a higher threshold voltage for the memory cell such that the process of programming is accomplished.

Abstract: An eyeglasses clip device for climbing has a body, two lens heads, and a pressing clamp. The body has a nose groove, two windows, two mounting recesses, and four guiding bars. The windows are formed through the body. The mounting recesses are formed in a front side of the body and are respectively formed around the windows. The guiding bars are forwardly formed on and protrude from the front side of the body respectively beside the mounting recesses. The lens heads are movably connected to the body respectively in the mounting recesses, and each one of the lens heads has an outer casing, a first lens, a second lens, and a mirror. The pressing clamp is detachably connected to the body between the lens heads and has a fixed frame and a pressing frame.

Abstract: An itinerary generation apparatus, method, and non-transitory computer readable storage medium thereof are provided. The itinerary generation apparatus includes a storage unit, an interface, and a processing unit, wherein the processing unit is electrically connected to the storage unit and the interface. The storage unit is stored with a piece of information related to a place. The interface is configured to receive a plurality of images, wherein each of the images has a shoot time. The processing unit determines that a portion of the images corresponds to the place according to a piece of schedule information. The processing unit retrieves the piece of information related to the place from the storage unit after determining that the portion corresponds to the place.

Abstract: A semiconductor transistor is formed as follows. A gate electrode is formed over but is insulated from a semiconductor body region. A first layer of insulating material is formed over the gate electrode and the semiconductor body region. A second layer of insulating material different from the first layer of insulating material is formed over the first layer of insulating material. Only the second layer of insulating material is etched to form spacers along the side-walls of the gate electrode. Impurities are implanted through the first layer of insulating material to form a source region and a drain region in the body region. A substantial portion of those portions of the first layer of insulting material extending over the source and drain regions is removed.

Abstract: A stack of two polysilicon layers is formed over a semiconductor body region. A DDD implant is performed to form a DDD source region in the semiconductor body region along a source side of the polysilicon stack but not along a drain side of the polysilicon stack. Off-set spacers are formed along opposing side-walls of the polysilicon stack. A source/drain implant is performed to form a drain region in the semiconductor body region along the drain side of the polysilicon stack and to form a highly doped region within the DDD source region such that the extent of an overlap between the polysilicon stack and each of the drain region and the highly doped region is inversely dependent on a thickness of the off-set spacers, and a lateral spacing directly under the polysilicon stack between adjacent edges of the DDD source region and the highly doped region is directly dependent on the thickness of the off-set spacers.

Abstract: A power control member for manned vehicles is revealed. The power control member includes a handle, a stem support and a power controller. The handle is sleeved and assembled with the stem support of a manned vehicle, and the power controller is arranged between the handle and the stem support. A power control shaft of the power controller shares the same axis with the handle and connects to the handle. Thereby rotation of the handle drives the power controller to control the direction and speed of the manned vehicle.

Abstract: This invention relates to a folding structure for carrier's handlebar, wherein it essentially comprises: a first joint (2) fixed in the front end of a carrier body (1) and having positioning teeth (25) formed on the sidewall in the interior thereof, and a second joint (3) pivotally provided in the first joint (2); a rail block (33) being fixed in the interior of the second joint (3), the rail block (33) being formed with a sliding rail (331), a slider (34) being formed in the sliding rail (331), occluding teeth (341) being formed on the bottom end of the slider (34) to mesh with the positioning teeth (25) of the first joint (2), a wire body (35) and an elastic member (36) being provided on the top end of the slider (34), and a dragon head handlebar (12) being provided on the second joint (3). In this manner, it is convenient for user to adjust the angle of the dragon head handlebar.

Abstract: A foldable wheeled vehicle for individuals includes a main body, front and rear wheels joined on the body, and an anti-tip wheel joined on a rear end of the main vehicle body; the rear wheels will be in an immobilized state when the vehicle isn't in-use; the anti-tilting wheel will move to be below the rear wheels automatically when the vehicle is folded; thus, the vehicle in the folded position can be dragged with the front wheels and the anti-tip wheel contacting the ground; secondly, the anti-tip wheel will be in a higher position than the rear wheels when the vehicle is in an expanded in-use position; thus, when the vehicle is moving along a slope and tilting rearwards, the anti-tip wheel will contact the ground to prevent the vehicle from tilting rearwards excessively to overturn.

Abstract: A personnel carrier for standing occupant is provided, comprising a handle portion, a bearing portion, a power supply portion and a drive portion. The handle portion has a support section, a steering handle, a front wheel and a forward-reverse manipulation unit. The bearing portion having a bearing stage is pivotally coupled with the handle portion, two rear wheels being attached to the bearing stage. The power supply portion is mounted on the support section of the handle portion. The drive portion incorporated with an electromagnetic brake device is disposed in the front wheel to control advance or stop of the personnel carrier. In this manner, a compact personnel carrier for bearing personnel in standing manner is thus formed.

Abstract: An electric wheelchair is disclosed. The electric wheelchair includes a main frame correspondingly pivoted with a foldable chair while the folding of the chair connects with an accessory tip wheel. Moreover, the main frame is disposed with main wheels and a front wheel set arranged on front of the main wheel correspondingly on each of two sides thereof. A footrest that is pulled out or stored in the main frame is arranged between the two front wheel sets. In use, the footrest is pulled out of the main frame and the chair is moved and unfolded. At the same time, the accessory tip wheel tilted a little angle is extended out of the main frame by a connecting member. Thereby the problem caused by movement of the center of gravity of the wheelchair while moving can be solved and the safety of users is ensured.

Abstract: A man-carrying vehicle has a chassis, which can be reduced for the vehicle to be easy to store, put away and transport; the chassis includes a front part, a rear part, and a stretching and reducing device interposed between the front and the rear parts; the stretching and reducing device includes first and second stationary components, first and second crank and connecting rod combinations, and a stretching and reducing assistant unit; the first and the second stationary components are fixedly joined on the front and the rear parts respectively; the crank and connecting rod combinations are interposed between and pivoted to the stationary components; the stretching and reducing assistant unit is interposed between and pivoted on one of the stationary components and one of the crank and connecting rod combinations to provide power to change position of the front part in relation to the rear part of the chassis.