Abstract: In order to provide a semiconductor device of high reliability which suppresses a degradation of the fatigue strength of solder connection portions and warping of a tape-type wiring substrate forming the cause of the inferior contact between solder bumps and an external substrate, and a method of manufacturing the semiconductor device, a frame-like member is disposed on the inner peripheral part of the tape-type wiring substrate so as to relax constraint on the thermal deformation of the tape-type semiconductor substrate.

Abstract: As the semiconductor chip is large-sized, highly integrated and speeded up, it becomes difficult to pack the semiconductor chip together with leads in a package. In view of this difficulty, there has been adopted the package structure called the "Lead-On-Chip" or "Chip-On-Lead" structure in which the semiconductor and the leads are stacked and packed. In the package of this structure, according to the present invention, the gap between the leading end portions of the inner leads and the semiconductor chip is made wider than that between the inner lead portions except the leading end portions and the semiconductor chip thereby to reduce the stray capacity, to improve the signal transmission rate and to reduce the electrical noises.

Abstract: As the semiconductor chip is large-sized, highly integrated and speeded up, it becomes difficult to pack the semiconductor chip together with leads in a package. In view of this difficulty, there has been adopted the package structure called the "Lead-On-Chip" or "Chip-On-Lead" structure in which the semiconductor and the leads are stacked and packed. In the package of this structure, according to the present invention, the gap between the leading end portions of the inner leads and the semiconductor chip is made wider than that between the inner lead portions except the leading end portions and the semiconductor chip thereby to reduce the stray capacity, to improve the signal transmission rate and to reduce the electrical noises.

Abstract: As the semiconductor chip is large-sized, highly integrated and speeded up, it becomes difficult to pack the semiconductor chip together with leads in a package. In view of this difficulty, there has been adopted the package structure called the "Lead-On-Chip" or "Chip-On-Lead" structure in which the semiconductor and the leads are stacked and packed. In the package of this structure, according to the present invention, the gap between the leading end portions of the inner leads and the semiconductor chip is made wider than that between the inner lead portions except the leading end portions and the semiconductor chip thereby to reduce the stray capacity, to improve the signal transmission rate and to reduce the electrical noises.

Abstract: A method for measuring an adhesion strength of a resin material which is capable of accurately and readily measuring a universal adhesion strength independent of dimensions and shapes of specimen. A delamination portion is partially formed between a resin and an adherend material. Loads in two different directions are applied to an adhering interface such that opposed shear stresses are generated. As a result, a true adhering strength can be obtained from an apparent delamination propagating strength in each case.

Abstract: A semiconductor device containing a polycrystalline silicon thin film wherein crystal grains of the silicon thin film have mainly a columnar structure and a crystal orientation of individual crystal grains is almost in a uniform direction can be produced by depositing a non-impurity-doped silicon thin film or an impurity layer on an interface of underlying film, followed by deposition of impurity-doped silicon thin film, if necessary, followed by heat treatment for polycrystallization.

Abstract: A bipolar device having a level difference between the contact area level of a base electrode and a base region in a silicon substrate, and the contact area level of an emitter electrode and an emitter region in the silicon substrate in the range of 0.03 .mu.m to 0.1 .mu.m by removing undesirable impurities from the emitter region and a predetermined horizontal distance between a sidewall and a device isolation film does not generate dislocation and show good electric characteristics.

Abstract: A semiconductor device of a structure in which lateral surfaces of a semiconductor element and an element supporting member are bonded to each other without resorting to use of a base member on which the semiconductor element is disposed. Since thicknesses of the base member and a bonding resin provides no contribution to overall thickness of the semiconductor device, reduction of thickness thereof by 30 to 40% is made possible. In dependent on configuration of the element supporting member, the semiconductor device can be applied to large size elements, lead-on-chip structure (LOC) and others.

Abstract: A bipolar device having a level difference between the contact area level of a base electrode and a base region in a silicon substrate, and the contact area level of an emitter electrode and an emitter region in the silicon substrate in the range of 0.03 .mu.m to 0.1 .mu.m by removing undesirable impurities from the emitter region and a predetermined horizontal distance between a sidewall and a device isolation film does not generate dislocation and show good electric characteristics.

Abstract: As the semiconductor chip is large-sized, highly integrated and speeded up, it becomes difficult to pack the semiconductor chip together with leads in a package. In view of this difficulty, there has been adopted the package structure called the "Lead-On-Chip" or "Chip-On-Lead" structure in which the semiconductor and the leads are stacked and packed. In the package of this structure, according to the present invention, the gap between the leading end portions of the inner leads and the semiconductor chip is made wider than that between the inner lead portions except the leading end portions and the semiconductor chip thereby to reduce the stray capacity, to improve the signal transmission rate and to reduce the electrical noises.

Abstract: A semiconductor device, provided in a plastic encapsulated package, having a semiconductor chip, a lead and a member for electrically connecting them together. The semiconductor device has one or more first holes respectively extending from one surface of the package to a first side of the lead which is provided inside of the package, and has one or more second holes formed which are aligned with the first holes, respectively, in a manner such that each second hole is extended from the opposing surface of the package to a corresponding location on a second side of the lead and is aligned with a corresponding, opposing first hole, in the package, extending to the first side of the lead. These holes are provided as a plurality of sets of individual pairs of aligned holes respectively extending inwardly, from opposing surfaces of the package, to opposite sides of the corresponding leads.

Abstract: A method of producing a leadframe for use in semiconductor devices, comprises the steps of forming a space between leads 1a and 1b which are to be overlapped and welded each other, and welding the leads at a region including the space and melting and cutting off one of the leads. In one of the leads which is melted, cohesion and separation of molten metal occur in the region around the space. As a result, unnecessary portions such as an outer frame used for positioning can be cut off at the same time when the leads are connected by welding. Thus, high precision positioning of a plurality of element leadframes as well as high assembling productivity are achieved.

Abstract: A method for measuring an adhesion strength of a resin material which is capable of accurately and readily measuring a universal adhesion strength independent of dimensions and shapes of specimen. A delamination portion is partially formed between a resin and an adherend material. Loads in two different directions are applied to an adhering interface such that opposed shear stresses are generated. As a result, a true adhering strength can be obtained from an apparent delamination propagating strength in each case.

Abstract: A plastic-molded-type semiconductor device is provided wherein two semiconductor chips, having main surfaces on which electrodes and circuits are formed, are arranged to face each other. A lead frame is placed between these two semiconductor chips and electrically connected to their electrodes, and a plastic package is formed by plastic-sealing the above components. To provide for secure and convenient electrical connections between the electrodes on the semiconductor chips and the lead frame, wiring patterns are provided on the main surfaces of the semiconductor chips through the intermediation of insulating films. With this structure, it is possible for two large-sized semiconductor chips having electrodes in their middle sections to be encased in a single, relatively thin package.

Abstract: As the semiconductor chip is large-sized, highly integrated and speeded up, it becomes difficult to pack the semiconductor chip together with leads in a package. In view of this difficulty, there has been adopted the package structure called the "Lead-On-Chip" or "Chip-On-Lead" structure in which the semiconductor and the leads are stacked and packed. In the package of this structure, according to the present invention, the gap between the leading end portions of the inner leads and the semiconductor chip is made wider than that between the inner lead portions except the leading end portions and the semiconductor chip thereby to reduce the stray capacity, to improve the signal transmission rate and to reduce the electrical noises.

Abstract: A plastic-molded-type semiconductor device is designed to prevent interfaces of a heat conductive member for heat radiation and plastic encapsulant from being separated from each other. The device is of a structure in which the heat conductive member for heat radiation is provided on and thermally connected to one side of a semiconductor chip, and the whole chip and the whole or a part of side surfaces of the heat conductive member are covered with the resin, the opposite side of the heat conductive member being exposed. In this structure, that portion of the heat conductive member which is covered with the resin has a cross-section whose configuration is any one of a circle, an ellipse, a polygon with corner portions whose internal angle is less than 180 degrees and a dull angle or which are rounded to have a low curvature.

Abstract: A method of producing a leadframe for use in semiconductor devices, comprises the steps of forming a space between leads 1a and 1b which are to be overlapped and welded each other, and welding the leads at a region including the space and melting and cutting off one of the leads. In one of the leads which is melted, cohesion and separation of molten metal occur in the region around the space. As a result, unnecessary portions such as an outer frame used for positioning can be cut off at the same time when the leads are connected by welding. Thus, high precision positioning of a plurality of element leadframes as well as high assembling productivity are achieved.

Abstract: A semiconductor device of a structure in which lateral surfaces of a semiconductor element and an element supporting member are bonded to each other without resorting to use of a base member on which the semiconductor element is disposed. Since thicknesses of the base member and a bonding resin provides no contribution to overall thickness of the semiconductor device, reduction of thickness thereof by 30 to 40% is made possible. In dependence on configuration of the element supporting member, the semiconductor device can be applied to large size elements, lead-on-chip structure (LOC) and others.

Abstract: A method for measuring an adhesion strength of a resin material which is capable of accurately and readily measuring a universal adhesion strength independent of dimensions and shapes of specimen. A delamination portion is partially formed between a resin and an adherend material. Loads in two different directions are applied to an adhering interface such that opposed shear stresses are generated. As a result, a true adhering strength can be obtained from an apparent delamination propagating strength in each case.

Abstract: As the semiconductor chip is large-sized, highly integrated and speeded up, it becomes difficult to pack the semiconductor chip together with leads in a package. In view of this difficulty, there has been adopted the package structure called the "Lead-On-Chip" or "Chip-On-Lead" structure in which the semiconductor and the leads are stacked and packed. In the package of this structure, according to the present invention, the gap between the leading end portions of the inner leads and the semiconductor chip is made wider than that between the inner lead portions except the leading end portions and the semiconductor chip thereby to reduce the stray capacity, to improve the signal transmission rate and to reduce the electrical noises.