Abstract: An integrated optical device includes an electro-absorption modulator disposed on a top surface of an optical waveguide. The electro-absorption modulator includes germanium disposed in a cavity between an n-type doped silicon sidewall and a p-type doped silicon sidewall. By applying a voltage between the n-type doped silicon sidewall and the p-type doped silicon sidewall, an electric field can be generated in a plane of the optical waveguide, but perpendicular to a propagation direction of the optical signal. This electric field shifts a band gap of the germanium, thereby modulating the optical signal.

Abstract: A photonic integrated circuit (PIC) that includes an optical source that provides an optical signal having a wavelength is described. This optical source includes a reflecting layer, a bottom cladding layer, an active layer (such as a III-V semiconductor) having a bandgap wavelength that exceeds that of silicon, and a top cladding layer. Moreover, an optical coupler (such as a grating coupler) that couples the optical signal out of a plane of the active layer is included in a region of the active layer. In this region, the top cladding layer is absent. Furthermore, in an adjacent region, the top cladding layer includes an inverse taper so that the top cladding layer is tapered down from a width distal from the region. In conjunction with the optical coupler, the inverse taper may facilitate low-loss optical coupling of the optical signal between the PIC and another PIC.

Abstract: Using silicon photonic components that support a single polarization, the output of an optical receiver is independent of the polarization of an optical signal. In particular, using a polarization-diversity technique, the two orthogonal polarizations in a single-mode optical fiber are split in two and processed independently. For example, the two optical signals are provided by a polarizing splitting grating coupler. Subsequently, a wavelength channel in the two optical signals is selected using a wavelength-selective filter (for example, using a ring resonator or an echelle grating) and combined at an optical detector (such as a photo-detector) to achieve polarization-independent operation.

Abstract: An integrated circuit includes an optical source that provides an optical signal to an optical waveguide. In particular, the optical source may be implemented by fusion-bonding a III-V semiconductor to a semiconductor layer in the integrated circuit. In conjunction with surrounding mirrors (at least one of which is other than a distributed Bragg reflector), this structure may provide a cavity with suitable optical gain at a wavelength in the optical signal along a vertical direction that is perpendicular to a plane of the semiconductor layer. For example, the optical source may include a vertical-cavity surface-emitting laser (VCSEL). Moreover, the optical waveguide, defined in the semiconductor layer, may be separated from the optical source by a horizontal gap in the plane of the semiconductor layer. During operation of the optical source, the optical signal may be optically coupled across the gap from the optical source to the optical waveguide.

Abstract: An integrated circuit includes an optical source that provides an optical signal to an optical waveguide. In particular, the optical source may be implemented by fusion-bonding a III-V semiconductor to a semiconductor layer in the integrated circuit. In conjunction with surrounding mirrors (at least one of which is other than a distributed Bragg reflector), this structure may provide a cavity with suitable optical gain at a wavelength in the optical signal along a vertical direction that is perpendicular to a plane of the semiconductor layer. For example, the optical source may include a vertical-cavity surface-emitting laser (VCSEL). Moreover, the optical waveguide, defined in the semiconductor layer, may be separated from the optical source by a horizontal gap in the plane of the semiconductor layer. During operation of the optical source, the optical signal may be optically coupled across the gap from the optical source to the optical waveguide.

Abstract: An integrated circuit includes a holographic recording material substantially filling a cavity in a semiconductor layer. During operation of the integrated circuit, a holographic pattern in the holographic recording is reconstructed and used to diffract an optical signal propagating in a plane of an optical waveguide, which is defined in the semiconductor layer out of the plane through the cavity. In this way, the holographic recording material may be used to couple the optical signal to an optical fiber or another integrated circuit.

Abstract: A chip package is described which includes a first chip having a first surface and first sides having a first side-wall angle, and a second chip having a second surface and second sides having a second side-wall angle, which faces and is mechanically coupled to the first chip. The chip package is fabricated using a batch process, and the chips in the chip package were singulated from their respective wafers after the chip package is assembled. This is accomplished by etching the first and second side-wall angles and thinning the wafer thicknesses prior to assembling the chip package. For example, the first and/or the second side walls can be fabricated using wet etching or dry etching. Therefore, the first and/or the second side-wall angles may be other than vertical or approximately vertical.

Abstract: In the optical device, a ring-resonator modulator, having an adjustable resonance (center) wavelength, optically couples an optical signal that includes the carrier wavelength from an input optical waveguide to an output optical waveguide. A monitoring mechanism in the optical device, which is optically coupled to the output optical waveguide, monitors a performance metric of an output optical signal from the output waveguide. For example, the monitoring mechanism may monitor: an average optical power associated with the output optical signal, and/or an amplitude of the output optical signal. Moreover, control logic in the optical device adjusts the resonance wavelength based on the monitored performance metric so that the performance metric is optimized.

Abstract: In a multiple-wavelength laser source, a multiple-mode laser outputs a set of wavelengths in a range of wavelengths onto an optical waveguide, where a spacing between adjacent wavelengths in the set of wavelengths is smaller than a width of channels in an optical link. Furthermore, a set of ring-resonator filters in the multiple-wavelength laser source, which are optically coupled to the optical waveguide, output corresponding subsets of the set of wavelengths for use in the optical link based on free spectral ranges and quality factors of the set of ring-resonator filters. These subsets may include one or more groups of wavelengths, with another spacing between adjacent groups of wavelengths that is larger than the width of the given channel in the optical link. In addition, the one or more groups of wavelengths may include one or more wavelengths, with the spacing between adjacent wavelengths in the given group of wavelengths.

Abstract: An optical de-MUX includes a sub-wavelength grating that magnifies an input optical signal. In particular, along a direction perpendicular to a propagation direction of the optical signal, the sub-wavelength grating has a spatially varying effective index of refraction that is larger at a center of the sub-wavelength grating than at an edge of the sub-wavelength grating. Moreover, the optical de-MUX includes an optical device that images and diffracts the optical signal using a reflective geometry, and which provides different diffraction orders to output ports. For example, the optical device may include an echelle grating.

Abstract: During a fabrication technique, trenches are defined partially through the thickness of a substrate. Then, photonic integrated circuits are coupled to the substrate. These photonic integrated circuits may be in a diving-board configuration, so that they at least partially overlap the trenches. While this may preclude the use of existing dicing techniques, individual hybrid integrated photonic chips (which each include a portion of the substrate and at least one of the photonic integrated circuits) may be singulated from the substrate by: coupling a carrier to a front surface of the substrate; thinning the substrate from a back surface until the partial trenches are reached (for example, by grinding the substrate); attaching a support mechanism (such as tape) to the back surface of the substrate; removing the carrier; and then removing the support mechanism.

Abstract: An optical device includes an optical reflector based on a coupled-loopback optical waveguide. In particular, an input port, an output port and an optical loop in arms of the optical reflector are optically coupled to a directional coupler. The directional coupler evanescently couples an optical signal between the arms. For example, the directional coupler may include: a multimode interference coupler and/or a Mach-Zehnder Interferometer (MZI). Moreover, destructive interference during the evanescent coupling determines the reflection and transmission power coefficients of the optical reflector.

Abstract: A chip package includes an optical integrated circuit (such as a hybrid integrated circuit) and an integrated circuit that are adjacent to each other on the same side of a substrate in the chip package. The integrated circuit includes electrical circuits, such as memory or a processor, and the optical integrated circuit communicates optical signals with very high bandwidth. In addition, an input/output (I/O) integrated circuit is coupled to the optical integrated circuit between the substrate and the optical integrated circuit. This I/O integrated circuit includes high-speed I/O circuits and energy-efficient driver and receiver circuits and communicates with optical devices on the optical integrated circuit. By integrating the optical integrated circuit, the integrated circuit and the I/O integrated circuit in close proximity, the chip package may facilitate improved performance compared to chip packages with electrical interconnects.

Abstract: An interconnect module for communicating electrical signals and optical signals is described. In particular, an integrated circuit in the interconnect module receives and transmits the electrical signals with other components in a system that includes the interconnect module via an electrical connector. In addition, the integrated circuit receives and transmits electrical signals to a hybrid silicon-photonic bridge chip that performs electrical-to-optical and optical-to-electrical conversion. In turn, this bridge chip receives and transmits optical signals via an optical fiber. The interconnect module can be remateably connected to a backplane in the system, and can be arranged in a stacked configuration with other instances of the interconnect module. In these ways, the interconnect module facilitates dense, modular or scalable, and compact electrical and optical communication in the system.

Abstract: An optical connector is described. This optical connector spatially segregates optical coupling between an optical fiber and an optical component, which relaxes the associated mechanical-alignment requirements. In particular, the optical connector includes an optical spreader component disposed on a substrate. This optical spreader component is optically coupled to the optical fiber at a first coupling region, and is configured to optically couple to the optical component at a second coupling region that is at a different location on the substrate than the first coupling region. Moreover, the first coupling region and the second coupling region are optically coupled by an optical waveguide.

Abstract: A photonic integrated circuit (PIC) is described. This PIC includes a grating coupler for surface-normal coupling that has an alternating pattern of grating teeth and grating trenches, where the grating trenches are filled with an electro-optical material. By applying an electric potential to the grating teeth, the index of refraction of the electro-optical material can be modified.

Abstract: A photonic integrated circuit (PIC) is described. This PIC includes a semiconductor-barrier layer-semiconductor diode in an optical waveguide that conveys an optical signal, where the barrier layer is an oxide or a high-k material. Moreover, semiconductor layers in the semiconductor-barrier layer-semiconductor diode may include geometric features (such as a periodic pattern of holes or trenches) that create a lattice-shifted photonic crystal optical waveguide having a group velocity of light that is lower than the group velocity of light in the first semiconductor layer and the second semiconductor layer without the geometric features. The optical waveguide is included in an optical modulator, such as a Mach-Zehnder interferometer (MZI).

Abstract: A hybrid optical source that provides an optical signal having a wavelength is described. This hybrid optical source includes an edge-coupled optical amplifier (such as a III-V semiconductor optical amplifier) aligned to a semiconductor reflector (such as an etched silicon mirror). The semiconductor reflector efficiently couples (i.e., with low optical loss) light out of the optical amplifier in a direction approximately perpendicular to a plane of the optical amplifier. A corresponding optical coupler (such as a diffraction grating or a mirror) fabricated on a silicon-on-insulator chip efficiently couples the light into a sub-micron silicon-on-insulator optical waveguide. The silicon-on-insulator optical waveguide couples the light to additional photonic elements (including a reflector) to complete the hybrid optical source.

Abstract: A fabrication technique for cleaving a substrate in an integrated circuit is described. During this fabrication technique, a trench is defined on a back side of a substrate. For example, the trench may be defined using photoresist and/or a mask pattern on the back side of the substrate. The trench may extend from the back side to a depth less than a thickness of the substrate. Moreover, a buried-oxide layer and a semiconductor layer may be disposed on a front side of the substrate. In particular, the substrate may be included in a silicon-on-insulator technology. By applying a force proximate to the trench, the substrate may be cleaved to define a surface, such as an optical facet. This surface may have high optical quality and may extend across the substrate, the buried-oxide layer and the semiconductor layer.

Abstract: A chip package is described. This chip package includes a substrate having a side at an angle relative to the top and bottom surfaces of the substrate that is between that of a direction parallel to the top and bottom surfaces and that of a direction perpendicular to the top and bottom surfaces (i.e., between 0° and 90°). This side may be configured to couple to a stack of semiconductor dies in which the semiconductor dies are offset from each other in a direction parallel to the top and bottom surfaces so that one side of the stack defines a stepped terrace. For example, the side may include electrical pads. These electrical pads may be coupled to electrical pads on the top surface by through-substrate vias (TSVs) in the substrate. Moreover, the electrical pads on the top surface may be configured to couple to an integrated circuit.