Abstract: A substrate joined body including: a first substrate; a second substrate; an organic film that comprises silicon and carbon and joins the first substrate and the second substrate; and a protective film that comprises an inorganic element and is formed over the organic film from at least a part of the surface of the first substrate and at least a part of the surface of the second substrate, wherein the protective film comprises a region in which the ratio of carbon to silicon based on atomic percentage is from 0.0 to 5.0 in a region within 50 nm in a thickness direction from a surface of the organic film on the protective film side, when the surface is measured by X-ray photoelectron spectroscopy.

Abstract: A method for producing a silicon substrate comprising a silicon base material; and a wiring formation layer laminated on a base material surface of the silicon base material, and being provided with a wiring member, an electrode member comprising a noble metal, and a close contact member comprising a base metal between the wiring member and the electrode member, wherein the method comprises a step of forming a deposition film by a fluorocarbon gas, in etching of the silicon substrate; and a removal step of removing, by a removal solution, the deposition film formed by the fluorocarbon gas; the removal solution comprises a primary amine and an organic polar solvent; a content of water in the removal solution is 10 mass % or lower; and a content of tetramethylammonium hydroxide in the removal solution is 1 mass % or lower.

Abstract: A method for producing a silicon substrate comprising a silicon base material; and a wiring formation layer laminated on a base material surface of the silicon base material, and being provided with a wiring member, an electrode member comprising a noble metal, and a close contact member comprising a base metal between the wiring member and the electrode member, wherein the method comprises a step of forming a deposition film by a fluorocarbon gas, in etching of the silicon substrate; and a removal step of removing, by a removal solution, the deposition film formed by the fluorocarbon gas; the removal solution comprises a primary amine and an organic polar solvent; a content of water in the removal solution is 10 mass % or lower; and a content of tetramethylammonium hydroxide in the removal solution is 1 mass % or lower.

Abstract: A method for manufacturing a liquid discharge head comprising: a substrate, a protective layer covering at least a part of the substrate, and a laminate member formed on the protective layer, wherein the method comprises steps of: forming the protective layer on at least a part of the substrate; forming the laminate member on the protective layer with a part of the protective layer exposed, the protective layer comprises at least Si and C, a content of oxygen in a bulk of the protective layer is less than 20 atomic % in terms of an element composition ratio, a modified layer with a content of oxygen of 20 atomic % or more in terms of an element composition ratio is present on a surface of the protective layer, and a thickness of the modified layer between the protective layer and the laminate member is 3.40 nm or less.

Abstract: A substrate joined body including: a first substrate; a second substrate; an organic film that comprises silicon and carbon and joins the first substrate and the second substrate; and a protective film that comprises an inorganic element and is formed over the organic film from at least a part of the surface of the first substrate and at least a part of the surface of the second substrate, wherein the protective film comprises a region in which the ratio of carbon to silicon based on atomic percentage is from 0.0 to 5.0 in a region within 50 nm in a thickness direction from a surface of the organic film on the protective film side, when the surface is measured by X-ray photoelectron spectroscopy.

Abstract: Provided is a method of forming a film on a substrate including: forming a protective member on a surface of the substrate; forming an organic structure on the surface of the substrate, at a distance from the protective member; removing the protective member after the formation of the organic structure; and forming a film by CVD in a region of the surface of the substrate from which the protective member is removed.

Abstract: A substrate having an obliquely running through hole is manufactured by arranging first and second masks each having an opening pattern on first and second surfaces, respectively, of the substrate, then forming cavities each facing an opening of the opening patterns from the respective surfaces by anisotropic dry etching, and making the cavities formed from the first surface and the cavities formed from the second surface communicate with each other to produce the through hole. The opening pattern of the first mask and the opening pattern of the second mask are arranged adjacently to or partially overlapping with each other as viewed from the direction orthogonal to the substrate. The opening area of at least one of the openings of the first and second masks are increased along the direction from the mask including the at least one opening toward the oppositely disposed mask.

Abstract: Provided is a method of forming a film on a substrate including: forming a protective member on a surface of the substrate; forming an organic structure on the surface of the substrate, at a distance from the protective member; removing the protective member after the formation of the organic structure; and forming a film by CVD in a region of the surface of the substrate from which the protective member is removed.

Abstract: A method of manufacturing an inkjet head substrate is provided. The inkjet head substrate includes an ink supply port having a through portion and a non-through portion, and the non-through portion is disposed at a position closer than the through portion to the energy generating element. The method includes disposing a mask having an opening that has a relatively large opening-width portion and a relatively small opening-width portion. The method also includes forming the through portion in the substrate at a position corresponding to the relatively large opening-width portion and the non-through portion in the substrate at a position corresponding to the relatively small opening-width portion by performing reactive ion etching on the substrate through the opening of the mask in one operation.

Abstract: A method for manufacturing a laminate has a process of forming a film on a substrate by an atomic layer deposition method and a process of forming a layer containing a compound polymerizable with acid and an acid generator, and then curing the layer to form resin layer on the film, in which the nitrogen atom atomic composition ratio of the film is 2.5% or less.

Abstract: A method for manufacturing a bonded substrate body in which an end portion of an adhesive is located at a position retreated in a direction to the inside of the bonded substrate body from an end surface of a bonding region of a first substrate and a second substrate includes forming a film on the end portion of the adhesive.

Abstract: A substrate having an obliquely running through hole is manufactured by arranging first and second masks each having an opening pattern on first and second surfaces, respectively, of the substrate, then forming cavities each facing an opening of the opening patterns from the respective surfaces by anisotropic dry etching, and making the cavities formed from the first surface and the cavities formed from the second surface communicate with each other to produce the through hole. The opening pattern of the first mask and the opening pattern of the second mask are arranged adjacently to or partially overlapping with each other as viewed from the direction orthogonal to the substrate. The opening area of at least one of the openings of the first and second masks are increased along the direction from the mask including the at least one opening toward the oppositely disposed mask.

Abstract: A liquid discharge head includes a substrate that is provided with a supply passage having an opening; an energy generating element that is disposed on a surface of the substrate; an electric wiring layer; an insulation layer; and a discharge port member that forms a discharge port. The insulation layer has an end portion adjacent to the opening of the supply passage and set back from an edge of the opening of the supply passage toward a side where the energy generating element is disposed. The electric wiring layer includes a plurality of electric wiring layers layered on each other.

Abstract: A method for processing a silicon substrate includes forming a structure having a bottom surface and a depth of 200 ?m or more or 300 ?m or more from a first surface of a silicon substrate, forming a protective film on an inner wall of the structure, and performing plasma etching so as to selectively remove the protective film disposed on the bottom surface of the structure with respect to the protective film disposed on the substantially perpendicular side wall of the structure, wherein the plasma etching is performed under the condition in which plasma with a sheath length at least 10 times the depth when the depth is 200 ?m or more, or at least 5 time the depth when the depth is 300 ?m or more, is generated and a mean free path of ions generated in the plasma is longer than the sheath length.

Abstract: A method of manufacturing an inkjet head substrate is provided. The inkjet head substrate includes an ink supply port having a through portion and a non-through portion, and the non-through portion is disposed at a position closer than the through portion to the energy generating element. The method includes disposing a mask having an opening that has a relatively large opening-width portion and a relatively small opening-width portion. The method also includes forming the through portion in the substrate at a position corresponding to the relatively large opening-width portion and the non-through portion in the substrate at a position corresponding to the relatively small opening-width portion by performing reactive ion etching on the substrate through the opening of the mask in one operation.

Abstract: A liquid election head including a silicon substrate and an element for generating energy that is utilized for electing a liquid on the silicon substrate, wherein a protective layer A containing a metal oxide is disposed on a first surface of the silicon substrate, a structure containing an organic resin and constituting part of a liquid flow passage is disposed on the protective layer A, and an intermediate layer A containing a silicon compound is disposed between the protective layer A and the structure.

Abstract: A liquid discharge head includes a substrate that is provided with. a supply passage having an opening; an energy generating element that is disposed on a surface of the substrate; an electric wiring layer; an insulation layer; and a discharge port member that forms a discharge port. The insulation layer has an end portion adjacent to the opening of the supply passage and set back from an edge of the opening of the supply passage toward a side where the energy generating element is disposed. The electric wiring layer includes a plurality of electric wiring layers layered on each other.

Abstract: A liquid ejection head includes: a substrate including an energy-generating element; a flow path forming member including a discharge port and having a liquid flow path formed between the flow path forming member and the substrate; and a plurality of through-passages passing through the substrate, each of the through-passages including a first through-passage part serving as a common liquid chamber and a plurality of second through-passage parts communicating with the first through-passage part, wherein a separation wall separating the adjacent first through-passage parts includes a plate-shaped member separating the adjacent first through-passage parts and approximately vertical to a substrate in-plane direction and, at least one protrusion protruding from the plate-shaped member in the substrate in-plane direction and contacting a bottom portion of the first through-passage part.

Abstract: A liquid discharge head comprising a silicon substrate; an insulating layer A formed on a first surface of the silicon substrate, a protective layer A that includes metal oxide and is formed on the insulating layer A, the structure that is formed on the protective layer A by direct contact with the protective layer A, includes organic resin, and forms a part of a flow path for liquid, and an element that is formed on a second surface of the silicon substrate on a side opposite to the first surface, and is configured to generate energy used for discharging the liquid.

Abstract: A method for manufacturing a laminate has a process of forming a film on a substrate by an atomic layer deposition method and a process of forming a layer containing a compound polymerizable with acid and an acid generator, and then curing the layer to form resin layer on the film, in which the nitrogen atom atomic composition ratio of the film is 2.5% or less.