Abstract: A method for manufacturing a bonded substrate body in which an end portion of an adhesive is located at a position retreated in a direction to the inside of the bonded substrate body from an end surface of a bonding region of a first substrate and a second substrate includes forming a film on the end portion of the adhesive.

Abstract: A liquid ejection head includes: a substrate including an energy-generating element; a flow path forming member including a discharge port and having a liquid flow path formed between the flow path forming member and the substrate; and a plurality of through-passages passing through the substrate, each of the through-passages including a first through-passage part serving as a common liquid chamber and a plurality of second through-passage parts communicating with the first through-passage part, wherein a separation wall separating the adjacent first through-passage parts includes a plate-shaped member separating the adjacent first through-passage parts and approximately vertical to a substrate in-plane direction and, at least one protrusion protruding from the plate-shaped member in the substrate in-plane direction and contacting a bottom portion of the first through-passage part.

Abstract: A method for manufacturing a structure having a substrate in which holes are formed and a photosensitive resin layer provided on the substrate in such a manner as to cover at least a part of the holes includes a process of preparing a substrate in which holes formed by a surface in which a wavelike shape is formed and a photosensitive resin layer provided on the substrate in such a manner as to cover at least a part of the holes and an exposure process of exposing the photosensitive resin layer on the substrate.

Abstract: A liquid election head including a silicon substrate and an element for generating energy that is utilized for electing a liquid on the silicon substrate, wherein a protective layer A containing a metal oxide is disposed on a first surface of the silicon substrate, a structure containing an organic resin and constituting part of a liquid flow passage is disposed on the protective layer A, and an intermediate layer A containing a silicon compound is disposed between the protective layer A and the structure.

Abstract: A liquid discharge head comprising a silicon substrate; an insulating layer A formed on a first surface of the silicon substrate, a protective layer A that includes metal oxide and is formed on the insulating layer A, the structure that is formed on the protective layer A by direct contact with the protective layer A, includes organic resin, and forms a part of a flow path for liquid, and an element that is formed on a second surface of the silicon substrate on a side opposite to the first surface, and is configured to generate energy used for discharging the liquid.

Abstract: There is provided a method for selectively removing a plurality of target objects by using a stripping solution without causing damage to an underlying material, the target objects including a resist used as a mask material for dry etching and a transformed layer and a deposited film formed during the dry etching, the stripping solution including a first composition, a second composition, and a third composition, and the method including continuously changing the composition of the stripping solution from the first composition to the second composition and then from the second composition to the third composition.

Abstract: A method for processing a silicon substrate includes forming a structure having a bottom surface and a depth of 200 ?m or more or 300 ?m or more from a first surface of a silicon substrate, forming a protective film on an inner wall of the structure, and performing plasma etching so as to selectively remove the protective film disposed on the bottom surface of the structure with respect to the protective film disposed on the substantially perpendicular side wall of the structure, wherein the plasma etching is performed under the condition in which plasma with a sheath length at least 10 times the depth when the depth is 200 ?m or more, or at least 5 time the depth when the depth is 300 ?m or more, is generated and a mean free path of ions generated in the plasma is longer than the sheath length.

Abstract: There is provided a method for selectively removing a plurality of target objects by using a stripping solution without causing damage to an underlying material, the target objects including a resist used as a mask material for dry etching and a transformed layer and a deposited film formed during the dry etching, the stripping solution including a first composition, a second composition, and a third composition, and the method including continuously changing the composition of the stripping solution from the first composition to the second composition and then from the second composition to the third composition.

Abstract: There are provided a processing method of a substrate in which in forming a trench on the substrate by etching, a side wall surrounding the trench is surely protected, and a manufacturing method of a liquid ejection head. The methods include: repeating sequentially a plurality of cycles of a trench forming step of forming the trench on a printing element substrate, a first protection layer forming step of forming a passivation layer, and a first protection layer removing step of removing a portion at which the trench is excavated in the passivation layer. A second protection layer forming step and a second protection layer removing step are performed between the trench forming step through the first protection layer removing step repeated in a plurality of cycles and the trench forming step through the first protection layer removing step repeated next.

Abstract: An object of the present invention is to provide a processing method of a silicon substrate, capable of suppressing breakage of thin silicon or a thin film structure of an intermediate layer in etching first and second silicon substrates. According to the present invention, a first silicon substrate and a second silicon substrate are bonded to each other while holding an intermediate layer having an opening between both of the silicon substrates in a bonding step. A closed space defined by at least one of the first and second silicon substrates and the opening at least partly embedded with a filler in a filling step. Furthermore, a liquid supply port is formed in such a manner as to penetrate the filler in the opening and the second silicon substrate from the first silicon substrate in an etching step.

Abstract: A method for manufacturing a structure having a substrate in which holes are formed and a photosensitive resin layer provided on the substrate in such a manner as to cover at least a part of the holes includes a process of preparing a substrate in which holes formed by a surface in which a wavelike shape is formed and a photosensitive resin layer provided on the substrate in such a manner as to cover at least a part of the holes and an exposure process of exposing the photosensitive resin layer on the substrate.

Abstract: There are provided a processing method of a substrate in which in forming a trench on the substrate by etching, a side wall surrounding the trench is surely protected, and a manufacturing method of a liquid ejection head. The methods include: repeating sequentially a plurality of cycles of a trench forming step of forming the trench on a printing element substrate, a first protection layer forming step of forming a passivation layer, and a first protection layer removing step of removing a portion at which the trench is excavated in the passivation layer. A second protection layer forming step and a second protection layer removing step are performed between the trench forming step through the first protection layer removing step repeated in a plurality of cycles and the trench forming step through the first protection layer removing step repeated next.

Abstract: An object of the present invention is to provide a processing method of a silicon substrate, capable of suppressing breakage of thin silicon or a thin film structure of an intermediate layer in etching first and second silicon substrates. According to the present invention, a first silicon substrate and a second silicon substrate are bonded to each other while holding an intermediate layer having an opening between both of the silicon substrates in a bonding step. A closed space defined by at least one of the first and second silicon substrates and the opening at least partly embedded with a filler in a filling step. Furthermore, a liquid supply port is formed in such a manner as to penetrate the filler in the opening and the second silicon substrate from the first silicon substrate in an etching step.

Abstract: A method of manufacturing a liquid ejection head includes the steps of (1) forming a recess in a second surface of a substrate to form a common supply port, (2) forming an etching mask, which specifies opening positions of independent supply ports, on a bottom surface of the common supply port, and (3) performing ion etching using plasma with the etching mask employed as a mask, thereby forming the independent supply ports. The etching mask has an opening pattern formed therein such that respective distances from an ejection energy generation element to openings of two independent supply ports adjacent to the ejection energy generation element on the first surface side of the substrate are equal to each other.

Abstract: A light transmissive mold used for imprinting a pattern onto a material applied on a semiconductor workpiece. The mold includes a first surface having an area of a pattern to be imprinted onto the material, a second surface located opposite from the first surface, and a third surface disposed between the first surface and the second surface, at a position inwardly away from the first surface. The third surface is arranged opposite to an area of the workpiece subjected to dicing. An alignment structure, provided for alignment between the mold and the workpiece, is formed in the third surface.

Abstract: There is provided an imprinting apparatus that transfers a pattern of a mold to a resin on a substrate, the imprinting apparatus including a deposition mechanism configured to deposit the resin onto the substrate; a first driving mechanism configured to change a relative position, on a plane parallel to the surface of the substrate, of the substrate and the mold; a second driving mechanism configured to change the relative position, on a plane parallel to the surface of the substrate, of the substrate and the deposition mechanism; and a control unit configured to control the deposition mechanism and the driving mechanism so as to perform a resin deposition process of depositing the resin onto the substrate and an imprint process of transferring the pattern of the mold to the resin on the substrate in parallel.

Abstract: A processing method of a silicon substrate including forming a second opening in a bottom portion of a first opening using a patterning mask having a pattern opening by plasma reactive ion etching. The reactive ion etching is performed with a shield structure formed in or on the silicon substrate, the shield structure preventing inside of the first opening from being exposed to the plasma.

Abstract: A process of producing a grating to be used in an X-ray image pickup apparatus includes the steps of preparing a grating having a plurality of protrusions periodically arranged, curving the grating in the direction in which the plurality of protrusions is arranged, and filling spaces between the protrusions with a metal in a state that the grating is curved.

Abstract: An imprint method includes contacting an imprint pattern of a mold and a resin material on a substrate. The resin material is cured by irradiating the resin material with light in a state in which the imprint pattern is in contact with the resin material. The mold is parted from the cured resin material, and gaseous molecules are irradiated, in an atmosphere in which the mold is placed, with an electromagnetic wave having a wavelength that is shorter than a wavelength of the light irradiating the resin material. The electromagnetic wave is emitted from an electrification removing light source that is provided in a lateral side of the mold. In the irradiating step, the gaseous molecules are ionized by the irradiation of the electromagnetic wave from the electrification removing light source. The ionized gaseous molecules are supplied into an atmosphere between the substrate and the mold to remove electrification of at least a portion of the mold.

Abstract: A pattern forming method for forming an imprinted pattern on a coating material disposed on a substrate with a pattern provided to a mold. The method includes preparing a mold provided with a first surface including a pattern area, a second surface located opposite from the first surface, and an alignment mark provided at a position at which the alignment mark is away from the first surface, contacting the pattern area of the mold with the coating material disposed on the substrate, obtaining information about positions of the mold and the substrate by using the alignment mark and a mark provided to the substrate in a state in which the coating material is disposed on the substrate at a portion where the alignment mark and the substrate are opposite to each other, and effecting alignment of the substrate with the mold in an in-plane direction of the pattern area, on the basis of the information in a state in which the pattern area and the coating material contact each other.