Abstract: A magnetically actuated MEMS switch 100 includes a first magnetic core portion 120, a first signal line 15, a first contact point 16, a second magnetic core portion 220, a second signal line 25, a second contact point 26, and a first coil portion 111 and a second coil portion 211 serving as a magnetic field applying portion that causes a current to flow in conductor coil to apply a magnetic field to the first magnetic core portion 120 and the second magnetic core portion 220. The first contact point 16 is displaced depending on the presence or absence of a magnetic field applied by the magnetic field applying portion. Connection and disconnection between the first contact point 16 and the second contact point 26 are switched in response to displacement of the first contact point 16.

Abstract: A thin-film piezoelectric material substrate includes an insulator on Si substrate and a thin-film laminated part. The insulator on Si substrate has a substrate for deposition made of silicon and an insulating layer formed on a surface of the substrate for deposition. The thin-film laminated part is formed on a top surface of the insulating layer. The thin-film laminated part has a YZ seed layer including yttrium and zirconium, and formed on the top surface; a lower electrode film laminated on the YZ seed layer; a piezoelectric material film made of lead zirconate titanate, shown by general formula Pb (ZrxTi(1-x)) O3, and formed on the lower electrode film; and an upper electrode film laminated on the piezoelectric material film.

Abstract: A capacitor includes a dielectric structure formed of a sintered dielectric, and a first electrode and a second electrode each formed of a conductor. The dielectric structure includes a wall. The first electrode and the second electrode are insulated from each other by the wall. The wall has a height which is a dimension in a first direction, and a thickness which is a dimension in a second direction orthogonal to the first direction, the height being greater than the thickness. The wall has a non-straight shape when seen in the first direction.

Abstract: A thin-film piezoelectric material substrate includes an insulator on Si substrate and a thin-film laminated part. The insulator on Si substrate has a substrate for deposition made of silicon and an insulating layer formed on a surface of the substrate for deposition. The thin-film laminated part is formed on a top surface of the insulating layer. The thin-film laminated part has a YZ seed layer including yttrium and zirconium, and formed on the top surface; a lower electrode film laminated on the YZ seed layer; a piezoelectric material film made of lead zirconate titanate, shown by general formula Pb(ZrxTi(1-x))O3, and formed on the lower electrode film; and an upper electrode film laminated on the piezoelectric material film.

Abstract: A capacitor includes a dielectric structure formed of a sintered dielectric, and a first electrode and a second electrode each formed of a conductor. The dielectric structure includes a wall. The first electrode and the second electrode are insulated from each other by the wall. The wall has a height which is a dimension in a first direction, and a thickness which is a dimension in a second direction orthogonal to the first direction, the height being greater than the thickness. The wall has a non-straight shape when seen in the first direction. A manufacturing method for the capacitor includes forming the dielectric structure, and forming the first electrode and the second electrode simultaneously after the formation of the dielectric structure.

Abstract: A capacitor includes a dielectric structure formed of a sintered dielectric, and a first electrode and a second electrode each formed of a conductor. The dielectric structure includes a wall. The first electrode and the second electrode are insulated from each other by the wall. The wall has a height which is a dimension in a first direction, and a thickness which is a dimension in a second direction orthogonal to the first direction, the height being greater than the thickness. The wall has a non-straight shape when seen in the first direction.

Abstract: A manufacturing method of an epitaxial thin film piezoelectric element includes: providing a substrate; forming a bottom electrode layer on the substrate by epitaxial growth process; forming a first piezoelectric layer that has c-axis orientation on the bottom electrode layer by epitaxial growth process; forming a second piezoelectric layer that has c-axis orientation and different phase structure from the first piezoelectric layer on the first piezoelectric layer by epitaxial growth process; and forming a top electrode layer on the second piezoelectric layer. The thin film piezoelectric element has good thermal stability, low temperature coefficient and high piezoelectric constant.

Abstract: A manufacturing method of an epitaxial thin film piezoelectric element includes: providing a substrate; forming a bottom electrode layer on the substrate by epitaxial growth process; forming a first piezoelectric layer that has c-axis orientation on the bottom electrode layer by epitaxial growth process; forming a second piezoelectric layer that has c-axis orientation and different phase structure from the first piezoelectric layer on the first piezoelectric layer by epitaxial growth process; and forming a top electrode layer on the second piezoelectric layer. The thin film piezoelectric element has good thermal stability, low temperature coefficient and high piezoelectric constant.

Abstract: A magnetic head for perpendicular magnetic recording includes a read head unit, a write head unit disposed forward of the read head unit along the direction of travel of a recording medium, a heater that generates heat for causing the medium facing surface to protrude in part, an expansion layer that makes part of the medium facing surface protrude, and a sensor that detects contact of the part of the medium facing surface with the recording medium. The write head unit includes a main pole, a write shield, and a return path section. The return path section includes a yoke layer located backward of the main pole along the direction of travel of the recording medium, a first coupling part that couples the yoke layer and the write shield to each other, and a second coupling part that is located away from the medium facing surface and couples the yoke layer and the main pole to each other.

Abstract: A thin-film piezoelectric material element includes a laminated structure part having a lower electrode film, a piezoelectric material film laminated on the lower electrode film and an upper electrode film laminated on the piezoelectric material film. The thin-film piezoelectric material element includes a surface layer insulating film disposed on side surfaces of the laminated structure part, a first top surface of the upper electrode film and a second top surface of the lower electrode film, and has a first through hole formed on a first top disposed part and a second through hole formed on a second top disposed part. Further, the surface layer insulating film has an upper electrode pad being in directly contact with a first inside exposed surface and a lower electrode pad being in directly contact with a second inside exposed surface.

Abstract: A thin-film piezoelectric material element includes a laminated structure part having a lower electrode film, a piezoelectric material film laminated on the lower electrode film and an upper electrode film laminated on the piezoelectric material film. The thin-film piezoelectric material element includes a surface layer insulating film disposed on side surfaces of the laminated structure part, a first top surface of the upper electrode film and a second top surface of the lower electrode film, and has a first through hole formed on a first top disposed part and a second through hole formed on a second top disposed part. Further, the surface layer insulating film has an upper electrode pad being in directly contact with a first inside exposed surface and a lower electrode pad being in directly contact with a second inside exposed surface.

Abstract: A memory device has a laminated chip package and a controller chip. In the laminated chip package, a plurality of memory chips are laminated. An interposed chip is laminated between the laminated chip package and the controller chip. The memory chips have a plurality of first wiring electrodes. The interposed chip has a plurality of second wiring electrodes. The second wiring electrodes are formed with a common arrangement pattern common with an arrangement pattern of a plurality of wiring electrodes for controller which are formed in the controller chip. The controller chip is laid on the interposed chip.

Abstract: A thin-film piezoelectric material substrate includes an insulator on Si substrate and a thin-film laminated part. The insulator on Si substrate has a substrate for deposition made of silicon and an insulating layer formed on a surface of the substrate for deposition. The thin-film laminated part is formed on a top surface of the insulating layer. The thin-film laminated part has a YZ seed layer including yttrium and zirconium, and formed on the top surface; a lower electrode film laminated on the YZ seed layer; a piezoelectric material film made of lead zirconate titanate, shown by general formula Pb(ZrxTi(1-x))O3, and formed on the lower electrode film; and an upper electrode film laminated on the piezoelectric material film.

Abstract: A thin-film piezoelectric material element includes a laminated structure part having a lower electrode film, a piezoelectric material film laminated on the lower electrode film and an upper electrode film laminated on the piezoelectric material film. The thin-film piezoelectric material element includes a surface layer insulating film disposed on side surfaces of the laminated structure part and a top surface of the upper electrode film, and has a through hole formed on a top disposed part disposed on the top surface. The surface layer insulating film has a long-side disposed part disposed outside than the top disposed part, the long-side disposed part has a long-side width, along with the long-side direction, formed shorter than the through hole.

Abstract: A thin-film piezoelectric material element includes a laminated structure part having a lower electrode film, a piezoelectric material film laminated on the lower electrode film and an upper electrode film laminated on the piezoelectric material film. The thin-film piezoelectric material element includes a surface layer insulating film disposed on side surfaces of the laminated structure part and a top surface of the upper electrode film, and has a through hole formed on a top disposed part disposed on the top surface. The surface layer insulating film has a long-side disposed part disposed outside than the top disposed part, the long-side disposed part has a long-side width, along with the long-side direction, formed shorter than the through hole.

Abstract: The present invention concerns an electroacoustic filter (1), comprising an electrode (2) having a main layer (6) which consists of a metallic material comprising an alloy of copper and molybdenum. According to a second aspect, the present invention concerns a method of manufacturing an electroacoustic filter (1), comprising the steps of: providing a substrate (3), sputtering a metallic material comprising an alloy of copper and molybdenum onto the substrate (3), annealing the metallic material, and pattering the metallic material to form a main layer (6) of an electrode (2).

Abstract: A thin film piezoelectric element of the present invention includes a substrate and a piezoelectric thin film stack formed on the substrate. The piezoelectric thin film stack includes a top electrode layer, a bottom electrode layer and a piezoelectric layer sandwiched between the top electrode layer and the bottom electrode layer, wherein the piezoelectric layer includes a first piezoelectric layer and a second piezoelectric layer whose compositions have different phase structures. The present invention can obtain high piezoelectric constants, enhanced coercive field strength and good thermal stability, thereby enabling larger applied field strength without depolarization and achieving a large stroke for its applied device.

Abstract: A thin-film magnetic head is constructed such that a main magnetic pole layer having a magnetic pole end face on a side of a medium-opposing surface opposing a recording medium, a write shield layer opposing the main magnetic pole layer on the medium-opposing surface side, a gap layer formed between the main magnetic pole layer and write shield layer, and a thin-film coil wound about the write shield layer or main magnetic pole layer are laminated on a substrate. This thin-film coil has a plurality of turn parts arranged at respective positions having different distances from the medium-opposing surface, while a non-expandable part made of an insulating material having a coefficient of thermal expansion smaller than that of a photosensitive resin is formed between the turn parts.

Abstract: In a manufacturing method for layered chip packages, a layered substructure with at least one additional package joined thereto is used to produce a plurality of layered chip packages. The layered substructure includes a plurality of main bodies to be separated from each other later. Each main body includes: a main part having top and bottom surfaces and including a plurality of layer portions stacked on each other; and a plurality of main terminals disposed on at least one of the top and bottom surfaces of the main part. The additional package includes an additional semiconductor chip and at least one additional terminal that is electrically connected to the additional semiconductor chip and in contact with at least one of the plurality of main terminals.

Abstract: A magnetic head includes a coil, a main pole, a write shield, and first and second yoke layers. The first and second yoke layers are magnetically connected to the write shield and aligned along the direction of travel of a recording medium such that the main pole is interposed therebetween. The coil includes a winding portion of planar spiral shape that is formed in one or more layers. The magnetic head further includes: a first coupling part located away from the medium facing surface and magnetically coupling the main pole and the second yoke layer to each other; and a second coupling part located away from the medium facing surface and magnetically coupling the first yoke layer and the second yoke layer to each other without touching the main pole. The winding portion is wound around the first coupling part, and a part of the winding portion passes between the first and second coupling parts.