Abstract: Conventional detergents for lithography which contain a surfactant as an active ingredient should have a reduced surfactant concentration because heightened surfactant concentrations result in dissolution of the resin component of a photoresist composition and hence in a dimensional change of a resist pattern. However, the conventional detergents have had a drawback that such a low concentration unavoidably reduces the ability to inhibit pattern falling and defect occurrence. A detergent for lithography is provided which is an aqueous solution containing (A) at least one member selected among nitrogenous cationic surfactants and nitrogenous ampholytic surfactants and (B) an anionic surfactant. This detergent retains a low surface tension even when it has a low concentration. It is effective in inhibiting pattern falling and defect occurrence. It can also inhibit resist patterns from fluctuating in dimension.

Abstract: In the case where a specimen is imaged by a scanning electron microscope, it is intended to acquire an image of a high quality having a noise component reduced, thereby to improve the precision of an image processing. The intensity distribution of a beam is calculated on the basis of an imaging condition or specimen information, and an image restoration is performed by using a resolving power deterioration factor other than the beam intensity distribution as a target of a deterioration mode, so that a high resolving power image can be acquired under various conditions. In the scanning electron microscope for semiconductor inspections and semiconductor measurements, the restored image is used for pattern size measurement, defect detections, defect classifications and so on, so that the measurements can be improved in precision and so that the defect detections and classifications can be made high precise.

Abstract: A method and device for observing a specimen, in which a convergent electron beam is irradiated and scanned from a desired direction, on a surface of a calibration substrate on which a pattern with a known shape is formed, and a beam SEM image of the pattern formed on the calibration substrate is obtained. An actual direction of the electron beam irradiated on the surface of the calibration substrate is calculated by use of the information about an apparent geometric deformation of the known shape on the SEM image, and the actual direction of the electron beam to the desired is adjusted direction by using information of the calculated direction.

Abstract: This invention provides a novel rinsing liquid for lithography, which, for a photoresist pattern, can reduce surface defects, the so-called defects, without sacrificing the quality of the product, and, at the same time, can impart resistance to electron beam irradiation to suppress the shrinkage of the resist pattern, and a method for resist pattern formation using the same.

Abstract: This invention relates to a SEM system constructed to create imaging recipes or/and measuring recipes automatically and at high speed, and improve inspection efficiency and an automation ratio, and to a method using the SEM system; a method for creation of imaging recipes and measuring recipes in the SEM system is adapted to include, in a recipe arithmetic unit, the steps of evaluating a tolerance for an imaging position error level at an evaluation point, evaluating a value predicted of the imaging position error level at the evaluation point when any region on circuit pattern design data is defined as an addressing point, and determining an imaging recipe and a measuring recipe on the basis of a relationship between the tolerance for the imaging position error level at the evaluation point and the predicted value of the imaging position error level at the evaluation point.

Abstract: A legged mobile robot gives up a normal walking motion and starts a tumbling motion when an excessively high external force or external moment is applied thereto and a behavior plan of a foot part thereof is disabled. At this time, the variation amount ?S/?t of the area S of a support polygon of the body per time t is minimized and the support polygon when the body drops onto a floor is maximized to distribute an impact which acts upon the body from the floor when the body drops onto the floor to the whole body to suppress the damage to the body to the minimum. Further, the legged mobile robot autonomously restores a standing up posture from an on-floor posture thereof such as a supine posture or a prone posture.

Abstract: A charged particle beam adjustment apparatus for tilting an electron beam by a tilt deflector is disclosed. The tilt angle adjustment of the electron beam and the distortion adjustment for correcting the image distortion generated when the electron beam is tilted are conducted on a specified. sample such as a pyramidal sample. The images before and after the tilting are acquired and processed to determine the tilt angle value and the distortion amount. The tilt angle adjustment and the adjustment for correction of the distortion are automated in accordance with a predetermined processing flow.

Abstract: A method and device for observing a specimen in which an electron beam is irradiated and scanned from an oblique direction, onto a surface of a calibration substrate on which a pattern with a known shape is formed, and an SEM image of the surface of the calibration substrate is obtained. An angle in an oblique direction of the electron beam irradiated is obtained and is adjusted to a desired angle. The electron beam is irradiated from the adjusted desired angle in the oblique direction, onto a specimen substrate on which a pattern is formed, and an SEM image of the specimen substrate is obtained. The SEM image of the specimen substrate is processed by use of the information of the desired angle, and a 3D image of the pattern on the specimen substrate or a shape of a cross section of the pattern is obtained.

Abstract: In order to provide an imaging-recipe arranging or creating apparatus and method adapted so that selection rules for automatic arrangement of an imaging recipe can be optimized by teaching in a SEM apparatus or the like, the imaging-recipe arranging or creating apparatus in this invention that arranges an imaging recipe for SEM-observing a semiconductor pattern using a scanning electron microscope includes a database that receives and stores layout information of the above semiconductor pattern in a low-magnification field, and an imaging-recipe arranging unit which, on the basis of the database-stored semiconductor pattern layout information, arranges the imaging recipe automatically in accordance with the automatic arrangement algorithm that includes teaching-optimized selection rules for selecting an imaging point(s).

Abstract: This invention provides a novel cleaning liquid for lithography that, for a photoresist pattern, is used for reducing a surface defect, that is, defect, of a product, preventing pattern collapse during water rinsing, and further imparting electron beam irradiation resistance to a resist to suppress pattern shrinkage. Further, in the novel cleaning liquid for lithography, bacteria contamination does not occur during storage. The cleaning liquid for lithography comprises an aqueous solution containing an amine oxide compound represented by general formula wherein R1 represents an alkyl or hydroxyalkyl group having 8 to 20 carbon atoms which may be interrupted by an oxygen atom; and R2 and R3 represent an alkyl or hydroxyalkyl group having 1 to 5 carbon atoms.

Abstract: The invention provides a novel rinsing fluid which can convert an easily wettable resist pattern surface having a contact angle of 40° or below into one having a contact angle of 70° or above to inhibit pattern collapse effectively and thereby give high-quality products.

Abstract: An image-forming apparatus is provided which is capable of forming a high-quality image without adverse effect (deterioration in printing precision) which may be caused by a dimensional error in producing ink ejection orifice rows, an error in arranging the ink ejection orifice rows, an error in delivering a recording medium, or a like error. With the apparatus employing six rows of ink ejection orifices, an image is formed by ejecting the ink from the third row of the six ink ejection orifice row numbered in the delivery direction onto a raster line zone L3, ejecting the ink from the fifth row onto a raster line zone L5, ejecting the ink from the sixth row onto a raster line zone L6, ejecting the ink from the fourth row onto a raster line zone L4, ejecting the ink from the second row onto a raster line zone L2, and ejecting the ink from the first row numbered in the recording medium delivery direction onto a raster line zone L1.

Abstract: A method of producing a high-quality product without damaging the physical properties of a pattern to be formed by a rinsing process based on a principle totally different from that for a conventional pattern collapse preventing method. A method for forming a resist pattern by subjecting a photo-resist layer provided on a substrate to image-forming exposure and then developing the resultant layer, wherein the resist pattern is formed, after the developing process, by the process of reducing a contact angle with respect to a contact liquid on the surface of the resist pattern to up to 40 degrees, then by the process of increasing it to at least 70 degrees, and further by drying it.

Abstract: A novel rinse solution for lithography to be used for suppressing contraction of a pattern and a method for forming a resist pattern using the rinse solution are provided, by reducing product surface defects of a photoresist pattern and providing the photoresist pattern with resistance to electronic beam irradiation. The rinse solution for lithography composed of a solution including a water-soluble resin having a nitrogen atom in a molecular structure is prepared. The resist pattern is formed with the rinse solution by performing (A) a process of providing a photoresist film on a board, (B) a process of selectively exposing the photoresist film through a mask pattern, (C) a process of performing post exposure bake (PEB), (D) a process of alkaline development, and (E) a process of treatment with the rinse solution for lithography.

Abstract: (1) part or all of the number, coordinates and size/shape and imaging sequence of imaging points each for observation, the imaging position change method and imaging conditions can be calculated automatically from CAD data, (2) a combination of input information and output information for imaging recipe creation can be set arbitrarily, and (3) decision is made of imaging or processing at an arbitrary imaging point as to whether to be successful/unsuccessful and in case a failure is determined, a relief process can be conducted in which the imaging point or imaging sequence is changed.

Abstract: A method is provided for estimating a cross-sectional shape or for monitoring manufacturing process parameters of a semiconductor device pattern to be measured. In this method, in order to enable SEM-based management of the cross-sectional shape or manufacturing process parameters of the pattern to be measured, the association between the cross-sectional shape or process parameters of the pattern and SEM image characteristic quantities effective for estimating the cross-sectional shape or process parameters of the pattern, is saved as learning data, and then the image characteristic quantities that have been calculated from a SEM image of the pattern are collated with the learning data to estimate the cross-sectional shape or to monitor process parameters of the pattern.

Abstract: To realize reliable on-film/under-film defect classification (classification into 3 classes of on-film, under-film, and determination-disabled) with determination propriety determination, an on-film/under-film defect classification method and a method of narrowing a range of defect generation timing are given, the methods being robust to 4 variation factors, wherein an edge of a boundary line between a line pattern region and a base region is focused, and whether the edge is preserved between defect and reference images in a defective region is determined, thereby an on-film or under-film defect can be identified. Furthermore, a range of the defect generation timing can be narrowed based on an identification result of the on-film or under-film defect, and information of a defect classification class (defect type) such as particle defect or pattern defect as necessary.

Abstract: The present invention relates to a method and apparatus for measuring a three-dimensional profile using a SEM, capable of accurately measuring the three-dimensional profile of even a flat surface or a nearly vertical surface based on the inclination angle dependence of the amount of secondary electron image signal detected by the SEM. Specifically, a tilt image obtaining unit obtains a tilt image (a tilt secondary electron image) I(2) of flat regions a and c1 on a pattern to be measured by using an electron beam incident on the pattern from an observation direction ?(2). Then, profile measuring units presume the slope (or surface inclination angle) at each point on the pattern based on the obtained tilt image and integrate successively each presumed slope value (or surface inclination angle value) to measure three-dimensional profiles S2a and S2c. This arrangement allows a three-dimensional profile to be accurately measured.

Abstract: The present invention provides a semiconductor pattern shape evaluating apparatus using a critical dimension SEM, which eliminates the necessity of data conversion corresponding to each process of semiconductor manufacturing conventionally required; controls possessed data integratedly; can select data effective for use in each process from the possessed data easily; if the shape of formed pattern changes with time, can create a photographing recipe which enables stable measurement by correcting the photographing recipe based on time-series data. Specifically, the semiconductor pattern shape evaluating apparatus correlates coordinate systems among diversified data to control the diversified data stored in a database integratedly, selects part or all of the diversified data arbitrarily and creates a photographing recipe for observing a semiconductor pattern with a critical dimension SEM using selected data.

Abstract: A method and device for observing a specimen in which an electron beam is irradiated and scanned from an oblique direction, onto a surface of a calibration substrate on which a pattern with a known shape is formed, and an SEM image of the surface of the calibration substrate is obtained. An angle in an oblique direction of the electron beam irradiated is obtained and is adjusted to a desired angle. The electron beam is irradiated from the adjusted desired angle in the oblique direction, onto a specimen substrate on which a pattern is formed, and an SEM image of the specimen substrate is obtained. The SEM image of the specimen substrate is processed by use of the information of the desired angle, and a 3D image of the pattern on the specimen substrate or a shape of a cross section of the pattern is obtained.