Abstract: A semiconductor storage device that determines the cause of an error at the time of the error correction of data read out from a non-volatile semiconductor memory, on the basis of a previously recorded error correction count, and selects a data refresh processing or a substitute processing to perform. When the error is detected, the corrected data is rewritten back for preventing reoccurrence of error due to accidental cause. If it is determined that the reoccurrence frequency of the error is high and the error is due to degradation of the storage medium, based on the error correction count, the substitute processing is performed.

Abstract: In a card storage device containing a non-volatile memory and a buffer memory, the buffer memory includes a plurality of banks. Data is transferred sequentially from a host CPU to the banks of the buffer memory, data is transferred to the non-volatile memory from a bank that becomes full, a write operation is started when one unit of data to be written into the non-volatile memory at a time has been transferred and, without waiting for the data to be written, the next write data is transferred from the host CPU to a bank from which write data has been transferred.

Abstract: A memory card is provided with a transfer control circuit, a write control circuit and a judging circuit. The transfer control circuit outputs a transfer flag signal during the data transfer. The write control circuit outputs an internal busy signal during the data write operation. The judging circuit outputs a transfer interruption signal when a card selection signal of the host is negated during the input of the transfer flat signal and also outputs a suspension signal when the card selection signal is negated during the input of the internal busy signal. A CPU invalidates the data being transfer to interrupt the transfer process upon reception of the transfer interruption signal and completes, upon reception of the suspension signal, the process being executed and stays in the waiting condition.

Abstract: When a non-volatile memory write error occurs in a card storage device containing a non-volatile memory and an error correction circuit, write data is read from the non-volatile memory and a check is made if the error can be corrected by the error correction circuit. If the error can be corrected, the write operation is ended. If the error correction circuit cannot correct the error, substitute processing is performed to write data into some other area.

Abstract: In the conventional nonvolatile memory, it is not possible to determine the cause of the error is accidental or due to the degradation when the error is detect at the time of data read. Therefore, unnecessary substitute processing is performed, resulting in the exhaustion of the substitute area to shorten the life of the storage device.

Abstract: A semiconductor storage device that determines the cause of an error at the time of the error correction of data read out from a non-volatile semiconductor memory, on the basis of a previously recorded error correction count, and selects a data refresh processing or a substitute processing to perform. When the error is detected, the corrected data is rewritten back for preventing reoccurrence of error due to accidental cause. If it is determined that the reoccurrence frequency of the error is high and the error is due to degradation of the storage medium, based on the error correction count, the substitute processing is performed.

Abstract: In the conventional nonvolatile memory, it is not possible to determine the cause of the error is accidental or due to the degradation when the error is detect at the time of data read. Therefore, unnecessary substitute processing is performed, resulting in the exhaustion of the substitute area to shorten the life of the storage device.

Abstract: A semiconductor storage device that determines the cause of an error at the time of the error correction of data read out from a non-volatile semiconductor memory, on the basis of a previously recorded error correction count, and selects a data refresh processing or a substitute processing to perform. When the error is detected, the corrected data is rewritten back for preventing reoccurrence of error due to accidental cause. If it is determined that the reoccurrence frequency of the error is high and the error is due to degradation of the storage medium, based on the error correction count, the substitute processing is performed.