Patents by Inventor Atul Gupta

Atul Gupta has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Apparatus for measuring beam characteristics and a method thereof
    Patent number: 8097866
    Abstract: An apparatus and a method for detecting particle beam characteristics are disclosed. In one embodiment, the apparatus may have a body including a first end and second end and at least one detector between the first and second ends. The apparatus may have a transparent state where a portion of the particles entering the apparatus may pass through the apparatus. The apparatus may also have a minimum transparency state where substantially all of the particles entering the apparatus may be prevented from passing through the apparatus and detected. Different transparency state may be achieved by rotating the apparatus or the detector contained therein. With the apparatus, it is possible to detect the beam properties such as the beam intensity, angle, parallelism, and a distribution of the particles in a particle beam.
    Type: Grant
    Filed: February 14, 2008
    Date of Patent: January 17, 2012
    Assignee: Varian Semiconductor Equipment Associates, Inc.
    Inventors: Joseph C. Olson, Atul Gupta
  • MANUFACTURING HIGH EFFICIENCY SOLAR CELL WITH DIRECTIONAL DOPING
    Publication number: 20120006392
    Abstract: A first facet of each of a plurality of pyramids on a surface of a workpiece is doped to a first dose while a second facet and a third facet of each of the plurality of pyramids is simultaneously doped to a second dose different than the first dose. The first facets may enable low resistance contacts and the second and third facets may enable higher current generation and an improved blue response. Ion implantation may be used to perform the doping.
    Type: Application
    Filed: July 1, 2011
    Publication date: January 12, 2012
    Applicant: VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC.
    Inventor: Atul GUPTA
  • HANDLING BEAM GLITCHES DURING ION IMPLANTATION OF WORKPIECES
    Publication number: 20110315899
    Abstract: Glitches during ion implantation of a workpiece, such as a solar cell, can be compensated for. In one instance, a workpiece is implanted during a first pass at a first speed. This first pass results in a region of uneven dose in the workpiece. The workpiece is then implanted during a second pass at a second speed. This second speed is different from the first speed. The second speed may correspond to the entire workpiece or just the region of uneven dose in the workpiece.
    Type: Application
    Filed: June 28, 2011
    Publication date: December 29, 2011
    Applicant: VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC.
    Inventors: Russell J. LOW, Atul GUPTA, William T. WEAVER
  • Continuously optimized solar cell metallization design through feed-forward process
    Patent number: 8084293
    Abstract: An improved, lower cost method of processing substrates, such as to create solar cells, is disclosed. The doped regions are created on the substrate, using a mask or without the use of lithography or masks. After the implantation is complete, visual recognition is used to determine the exact region that was implanted. This information can then be used by subsequent process steps to crate a suitable metallization layer and provide alignment information. These techniques can also be used in other ion implanter applications. In another aspect, a dot pattern selective emitter is created and imaging is used to determine the appropriate metallization layer.
    Type: Grant
    Filed: April 6, 2010
    Date of Patent: December 27, 2011
    Assignee: Varian Semiconductor Equipment Associates, Inc.
    Inventors: Benjamin Riordon, Russell Low, Atul Gupta, William Weaver
  • Masked Ion Implant with Fast-Slow Scan
    Publication number: 20110272602
    Abstract: An improved method of producing solar cells utilizes a mask which is fixed relative to an ion beam in an ion implanter. The ion beam is directed through a plurality of apertures in the mask toward a substrate. The substrate is moved at different speeds such that the substrate is exposed to an ion dose rate when the substrate is moved at a first scan rate and to a second ion dose rate when the substrate is moved at a second scan rate. By modifying the scan rate, various dose rates may be implanted on the substrate at corresponding substrate locations. This allows ion implantation to be used to provide precise doping profiles advantageous for manufacturing solar cells.
    Type: Application
    Filed: July 22, 2011
    Publication date: November 10, 2011
    Applicant: VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC.
    Inventors: Nicholas P.T. Bateman, Steven M. Anella, Benjamin B. Riordon, Atul Gupta
  • Continuously Optimized Solar Cell Metallization Design through Feed-Forward Process
    Publication number: 20110244625
    Abstract: An improved, lower cost method of processing substrates, such as to create solar cells, is disclosed. The doped regions are created on the substrate, using a mask or without the use of lithography or masks. After the implantation is complete, visual recognition is used to determine the exact region that was implanted. This information can then be used by subsequent process steps to crate a suitable metallization layer and provide alignment information. These techniques can also be used in other ion implanter applications. In another aspect, a dot pattern selective emitter is created and imaging is used to determine the appropriate metallization layer.
    Type: Application
    Filed: April 6, 2010
    Publication date: October 6, 2011
    Applicant: VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC.
    Inventors: Benjamin Riordon, Russell Low, Atul Gupta, William Weaver
  • Masked ion implant with fast-slow scan
    Patent number: 8008176
    Abstract: An improved method of producing solar cells utilizes a mask which is fixed relative to an ion beam in an ion implanter. The ion beam is directed through a plurality of apertures in the mask toward a substrate. The substrate is moved at different speeds such that the substrate is exposed to an ion dose rate when the substrate is moved at a first scan rate and to a second ion dose rate when the substrate is moved at a second scan rate. By modifying the scan rate, various dose rates may be implanted on the substrate at corresponding substrate locations. This allows ion implantation to be used to provide precise doping profiles advantageous for manufacturing solar cells.
    Type: Grant
    Filed: August 10, 2010
    Date of Patent: August 30, 2011
    Assignee: Varian Semiconductor Equipment Associates, Inc.
    Inventors: Nicholas P. T. Bateman, Steven M. Anella, Benjamin B. Riordon, Atul Gupta
  • SELF-ALIGNED ION IMPLANTATION FOR IBC SOLAR CELLS
    Publication number: 20110201188
    Abstract: An improved method of doping a substrate is disclosed. The method is particularly beneficial to the creation of interdigitated back contact (IBC) solar cells. A paste having a dopant of a first conductivity is applied to the surface of the substrate. This paste serves as a mask for a subsequent ion implantation step, allowing ions of a dopant having an opposite conductivity to be introduced to the portions of the substrate which are exposed. After the ions are implanted, the mask can be removed and the dopants may be activated. Methods of using an aluminum-based and phosphorus-based paste are disclosed.
    Type: Application
    Filed: February 16, 2011
    Publication date: August 18, 2011
    Applicant: VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC.
    Inventors: Atul Gupta, Nicholas Bateman
  • Determining priority between data items in shared environments
    Patent number: 8001081
    Abstract: One embodiment of the invention enables nodes or endpoints that have been involved with synchronization of data items to determine which version of a data item (if any) has priority over another version of that same data item. For example, one embodiment of the invention can include a method that can include the determination as to whether any data items have matching identities and conflicting priorities after the synchronization process. Provided a first and second data items have matching identities and conflicting priorities, a determination is made as to whether an indication had been made that the first data item is desirable over the second data item. Provided the indication had been made that the first data is desirable over the second data item, it is indicated that the first data item has priority over the second data item.
    Type: Grant
    Filed: October 21, 2004
    Date of Patent: August 16, 2011
    Assignee: Access Co., Ltd.
    Inventors: William L. Mills, Thomas C. Butler, Uma D. Gouru, Atul Gupta, Jayita Poddar, Gerard G. Pallipuram, Alvin I. Pivowar
  • BIFACIAL SOLAR CELL USING ION IMPLANTATION
    Publication number: 20110177652
    Abstract: An improved bifacial solar cell is disclosed. In some embodiments, the front side includes an n-type field surface field, while the back side includes a p-type emitter. In other embodiments, the p-type emitter is on the front side. To maximize the diffusion of majority carriers and lower the series resistance between the contact and the substrate, the regions beneath the metal contacts are more heavily doped. Thus, regions of higher dopant concentration are created in at least one of the FSF or the emitter. These regions are created through the use of selective implants, which can be performed on one or two sides of the bifacial solar cell to improve efficiency.
    Type: Application
    Filed: January 20, 2011
    Publication date: July 21, 2011
    Applicant: VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC.
    Inventors: Atul Gupta, Nicholas P.T. Bateman
  • APPARATUS AND METHOD FOR CONTROLLABLY IMPLANTING WORKPIECES
    Publication number: 20110124186
    Abstract: A plasma processing apparatus comprises a plasma source configured to produce a plasma in a plasma chamber, such that the plasma contains ions for implantation into a workpiece. The apparatus also includes a focusing plate arrangement having an aperture arrangement configured to modify a shape of a plasma sheath of the plasma proximate the focusing plate such that ions exiting an aperture of the aperture arrangement define focused ions. The apparatus further includes a processing chamber containing a workpiece spaced from the focusing plate such that a stationary implant region of the focused ions at the workpiece is substantially narrower that the aperture. The apparatus is configured to create a plurality of patterned areas in the workpiece by scanning the workpiece during ion implantation.
    Type: Application
    Filed: November 16, 2010
    Publication date: May 26, 2011
    Applicant: VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC.
    Inventors: Anthony Renau, Ludovic Godet, Timothy J. Miller, Joseph C. Olson, Vikram Singh, James Buonodono, Frank Sinclair, Deepak A. Ramappa, Russell Low, Atul Gupta, Kevin M. Daniels
  • MASKED ION IMPLANT WITH FAST-SLOW SCAN
    Publication number: 20110039367
    Abstract: An improved method of producing solar cells utilizes a mask which is fixed relative to an ion beam in an ion implanter. The ion beam is directed through a plurality of apertures in the mask toward a substrate. The substrate is moved at different speeds such that the substrate is exposed to an ion dose rate when the substrate is moved at a first scan rate and to a second ion dose rate when the substrate is moved at a second scan rate. By modifying the scan rate, various dose rates may be implanted on the substrate at corresponding substrate locations. This allows ion implantation to be used to provide precise doping profiles advantageous for manufacturing solar cells.
    Type: Application
    Filed: August 10, 2010
    Publication date: February 17, 2011
    Applicant: VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC.
    Inventors: Nicholas P.T. Bateman, Steven M. Anella, Benjamin B. Riordon, Atul Gupta
  • Use of chained implants in solar cell
    Patent number: 7888249
    Abstract: The manufacture of solar cells is simplified and cost reduced through by performing successive ion implants, without an intervening thermal cycle. In addition to reducing process time, the use of chained ion implantations may also improve the performance of the solar cell. In another embodiment, two different species are successively implanted without breaking vacuum. In another embodiment, the substrate is implanted, then flipped such that it can be and implanted on both sides before being annealed. In yet another embodiment, one or more different masks are applied and successive implantations are performed without breaking the vacuum condition, thereby reducing the process time.
    Type: Grant
    Filed: April 14, 2010
    Date of Patent: February 15, 2011
    Assignee: Varian Semiconductor Equipment Associates, Inc.
    Inventors: Nicholas P. T. Bateman, Atul Gupta, Paul Sullivan, Paul J. Murphy
  • Technique for ion beam angle spread control
    Patent number: 7868305
    Abstract: A technique for ion beam angle spread control is disclosed. In one particular exemplary embodiment, the technique may be realized as a method for ion beam angle spread control. The method may comprise directing one or more ion beams at a substrate surface at two or more different incident angles, thereby exposing the substrate surface to a controlled spread of ion beam incident angles.
    Type: Grant
    Filed: June 7, 2005
    Date of Patent: January 11, 2011
    Assignee: Varian Semiconductor Equipment Associates, Inc.
    Inventors: Atul Gupta, Joseph C. Olson
  • Low-k b-doped SiC copper diffusion barrier films
    Patent number: 7842604
    Abstract: The present invention provides a low dielectric constant copper diffusion barrier film composed, at least in part, of boron-doped silicon carbide suitable for use in a semiconductor device and methods for fabricating such a film. The copper diffusion barrier maintains a stable dielectric constant of less than 4.5 in the presence of atmospheric moisture.
    Type: Grant
    Filed: May 22, 2007
    Date of Patent: November 30, 2010
    Assignee: Novellus Systems, Inc.
    Inventors: Yongsik Yu, Atul Gupta, Karen Billington, Michael Carris, William Crew, Thomas W. Mountsier
  • High tilt implant angle performance using in-axis tilt
    Patent number: 7820985
    Abstract: The present invention comprises a method for high tilt angle implantation, with angular precision not previously achievable. An ion beam, having a width and height dimension, is made up of a number of individual beamlets. These beamlets typically display a higher degree of parallelism in one of these two dimensions. Thus, to minimize angular error, the workpiece is tilted about an axis substantially perpendicular to the dimension having the higher degree of parallelism. The workpiece is then implanted at a high tilt angle and rotated about a line orthogonal to the surface of the workpiece. This process can be repeated until the high tilt implantation has been performed in all required regions.
    Type: Grant
    Filed: December 28, 2007
    Date of Patent: October 26, 2010
    Assignee: Varian Semiconductor Equipment Associates, Inc.
    Inventors: Atul Gupta, Joseph C. Olson
  • COUNTERDOPING FOR SOLAR CELLS
    Publication number: 20100224240
    Abstract: Methods of counterdoping a solar cell, particularly an IBC solar cell are disclosed. One surface of a solar cell may require portions to be n-doped, while other portions are p-doped. Traditionally, a plurality of lithography and doping steps are required to achieve this desired configuration. In contrast, one lithography step can be eliminated by the use of a blanket doping of one conductivity and a mask patterned counterdoping process of the opposite conductivity. The areas dosed during the masked patterned doping receive a sufficient dose so as to completely reverse the effect of the blanket doping and achieve a conductivity that is opposite the blanket doping. In another embodiment, the counterdoping is performed by means of a direct patterning technique, thereby eliminating the remaining lithography step. Various methods of direct counterdoping processes are disclosed.
    Type: Application
    Filed: May 17, 2010
    Publication date: September 9, 2010
    Applicant: VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC.
    Inventors: Nicholas BATEMAN, Atul GUPTA, Paul SULLIVAN
  • USE OF CHAINED IMPLANTS IN SOLAR CELL
    Publication number: 20100197126
    Abstract: The manufacture of solar cells is simplified and cost reduced through by performing successive ion implants, without an intervening thermal cycle. In addition to reducing process time, the use of chained ion implantations may also improve the performance of the solar cell. In another embodiment, two different species are successively implanted without breaking vacuum. In another embodiment, the substrate is implanted, then flipped such that it can be and implanted on both sides before being annealed. In yet another embodiment, one or more different masks are applied and successive implantations are performed without breaking the vacuum condition, thereby reducing the process time.
    Type: Application
    Filed: April 14, 2010
    Publication date: August 5, 2010
    Applicant: VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC.
    Inventors: Nicholas BATEMAN, Atul Gupta, Paul Sullivan, Paul Murphy
  • TECHNIQUE FOR PROCESSING A SUBSTRATE
    Publication number: 20100197125
    Abstract: An improved technique for processing a substrate is disclosed. In one particular exemplary embodiment, the technique may be realized as a method for processing a substrate. The method may comprise ion implanting a substrate disposed downstream of the ion source with ions generated in an ion source; and disposing a first portion of a mask in front of the substrate to expose the first portion of the mask to the ions, the mask being supported by the first and second mask holders, the mask further comprising a second portion wound in the first mask holder.
    Type: Application
    Filed: January 28, 2010
    Publication date: August 5, 2010
    Applicant: VARIAN SEMICONDUCTOR EQUIPMENT ASSOICTES, INC.
    Inventors: Russell J. Low, William Weaver, Nicholas P.T. Bateman, Atul Gupta
  • Synchronization protocol for synchronizing data between nodes
    Patent number: 7747561
    Abstract: A method and system thereof for synchronizing a data set comprising a first data set residing on a first node with a second data set residing on a second node. Packets are exchanged with the second node. A packet comprises one or more messages and a message comprises a plurality of elements. At least one of the elements identifies the data set. Other information in the packets is used to identify any data from the first data set that needs to be sent to the second node and any data from the second data set that needs to be received from the second node, in order to synchronize the data set on both nodes. The data so identified can then be exchanged.
    Type: Grant
    Filed: May 31, 2002
    Date of Patent: June 29, 2010
    Assignee: PalmSource Inc.
    Inventors: Atul Gupta, William L. Mills, Gerard Pallipuram