Abstract: Method for manufacturing a semiconductor pressure sensor, wherein, in a silicon substrate, trenches are dug and delimit walls; a closing layer is epitaxially grown, that closes the trenches at the top and forms a suspended membrane; a heat treatment is performed so as to cause migration of the silicon of the walls and to form a closed cavity underneath the suspended membrane; and structures are formed for transducing the deflection of the suspended membrane into electrical signals.

Abstract: A substrate-level assembly having a device substrate of semiconductor material with a top face and housing a first integrated device, including a buried cavity formed within the device substrate, and with a membrane suspended over the buried cavity in the proximity of the top face. A capping substrate is coupled to the device substrate above the top face so as to cover the first integrated device in such a manner that a first empty space is provided above the membrane. Electrical-contact elements electrically connect the integrated device with the outside of the substrate-level assembly. In one embodiment, the device substrate integrates at least a further integrated device provided with a respective membrane, and a further empty space, fluidly isolated from the first empty space, is provided over the respective membrane of the further integrated device.

Abstract: A magnetoresistive element formed by a strip of magnetoresistive material which extends on a substrate of semiconductor material having an upper surface. The strip comprises at least one planar portion which extends parallel to the upper surface, and at least one transverse portion which extends in a direction transverse to the upper surface. The transverse portion is formed on a transverse wall of a dig. By providing a number of magnetoresistive elements perpendicular to one another it is possible to obtain an electronic compass that is insensitive to oscillations with respect to the horizontal plane parallel to the surface of the Earth.

Abstract: A microelectromechanical-acoustic-transducer assembly has: a first die integrating a MEMS sensing structure having a membrane, which has a first surface in fluid communication with a front chamber and a second surface, opposite to the first surface, in fluid communication with a back chamber of the microelectromechanical acoustic transducer, is able to undergo deformation as a function of incident acoustic-pressure waves, and faces a rigid electrode so as to form a variable-capacitance capacitor; a second die, integrating an electronic reading circuit operatively coupled to the MEMS sensing structure and supplying an electrical output signal as a function of the capacitive variation; and a package, housing the first die and the second die and having a base substrate with external electrical contacts. The first and second dice are stacked in the package and directly connected together mechanically and electrically; the package delimits at least one of the front and back chambers.

Abstract: An inertial sensor provided with a detection structure sensitive to a first, a second and a third component of acceleration along respective directions of detection, and generating respective electrical quantities as a function of said components of acceleration. The detection structure supplies at output a resultant electrical quantity obtained as combination of said electrical quantities, and correlated to the value of a resultant acceleration acting on the inertial sensor, given by a vector sum of the components of acceleration. In particular, the detection structure is of a microelectromechanical type, and comprises a mobile portion made of semiconductor material forming with a fixed portion a first, a second and a third detection capacitor, and an electrical-interconnection portion, connecting the detection capacitors in parallel; the resultant electrical quantity being the capacitance obtained from said connection in parallel.

Abstract: A process for manufacturing a membrane of nozzles of a spray device, comprising the steps of laying a substrate, forming a membrane layer on the substrate, forming a plurality of nozzles in the membrane layer, forming a plurality of supply channels in the substrate, each supply channel being substantially aligned in a vertical direction to a respective nozzle of the plurality of nozzles and in direct communication with the respective nozzle.

Abstract: In a device for determining the position of a touch on a contact surface, a plurality of vibration sensors are configured to detect mechanical vibrations generated by the touch on the contact surface and to generate corresponding vibration signals, and a processing circuit is connected to the vibration sensors and is configured to determine the touch position via a time-of-flight algorithm, based on differences between times of detection of the mechanical vibrations by the vibration sensors.

Abstract: A portable apparatus having an accelerometer device and a supporting element in the accelerometer device, having a first body of semiconductor material integrating a sensor element that detects movements of the first body and generates a signal correlated to the detected movement; a second body of semiconductor material that integrates a conditioning electronics and that is electrically connected to the first body; and conductive bumps that provide electrical connection of the first and second bodies to the supporting element. In particular, the conductive bumps connect the first and second bodies to the supporting element without the interposition of any packaging.

Abstract: In a micro-electromechanical structure of semiconductor material, a detection structure is formed by a stator and by a rotor, which are mobile with respect to one another in presence of an external stress and are subject to thermal stress; a compensation structure of a micro-electromechanical type, subject to thermal stress and invariant with respect to the external stress, is connected to the detection structure thereby the micro-electromechanical structure supplies an output signal correlated to the external stress and compensated in temperature.

Abstract: A micro-electro-mechanical variable capacitor has a first and a second electrode, and a dielectric region arranged on the first electrode. An intermediate electrode is arranged on the dielectric region. The first electrode is fixed and anchored to a substrate, and the second electrode includes a membrane movable with respect to the first electrode according to an external actuation, in particular an electrostatic force due to an actuation voltage applied between an actuation electrode and the first electrode. The second electrode is suspended over the intermediate electrode in a first operating condition, and contacts the intermediate electrode in a second operating condition; in particular, in the second operating condition, a short-circuit is established between the second electrode and the intermediate electrode.

Abstract: A substrate-level assembly having a device substrate of semiconductor material with a top face and housing a first integrated device, including a buried cavity formed within the device substrate, and with a membrane suspended over the buried cavity in the proximity of the top face. A capping substrate is coupled to the device substrate above the top face so as to cover the first integrated device in such a manner that a first empty space is provided above the membrane. Electrical-contact elements electrically connect the integrated device with the outside of the substrate-level assembly. In one embodiment, the device substrate integrates at least a further integrated device provided with a respective membrane, and a further empty space, fluidically isolated from the first empty space, is provided over the respective membrane of the further integrated device.

Abstract: Method for manufacturing a semiconductor pressure sensor, wherein, in a silicon substrate, trenches are dug and delimit walls; a closing layer is epitaxially grown, that closes the trenches at the top and forms a suspended membrane; a heat treatment is performed so as to cause migration of the silicon of the walls and to form a closed cavity underneath the suspended membrane; and structures are formed for transducing the deflection of the suspended membrane into electrical signals.

Abstract: An inertial sensor provided with a detection structure sensitive to a first, a second and a third component of acceleration along respective directions of detection, and generating respective electrical quantities as a function of said components of acceleration. The detection structure supplies at output a resultant electrical quantity obtained as combination of said electrical quantities, and correlated to the value of a resultant acceleration acting on the inertial sensor, given by a vector sum of the components of acceleration. In particular, the detection structure is of a microelectromechanical type, and comprises a mobile portion made of semiconductor material forming with a fixed portion a first, a second and a third detection capacitor, and an electrical-interconnection portion, connecting the detection capacitors in parallel; the resultant electrical quantity being the capacitance obtained from said connection in parallel.

Abstract: In a micro-electromechanical structure of semiconductor material, a detection structure is formed by a stator and by a rotor, which are mobile with respect to one another in presence of an external stress and are subject to thermal stress; a compensation structure of a micro-electromechanical type, subject to thermal stress and invariant with respect to the external stress, is connected to the detection structure thereby the micro-electromechanical structure supplies an output signal correlated to the external stress and compensated in temperature.

Abstract: A micro-electro-mechanical variable capacitor has a first and a second electrode, and a dielectric region arranged on the first electrode. An intermediate electrode is arranged on the dielectric region. The first electrode is fixed and anchored to a substrate, and the second electrode includes a membrane movable with respect to the first electrode according to an external actuation, in particular an electrostatic force due to an actuation voltage applied between an actuation electrode and the first electrode. The second electrode is suspended over the intermediate electrode in a first operating condition, and contacts the intermediate electrode in a second operating condition; in particular, in the second operating condition, a short-circuit is established between the second electrode and the intermediate electrode.

Abstract: A planar inertial sensor includes a first region and a second region of semiconductor material. The second region is capacitively coupled, and mobile with respect to the first region. The second region extends in a plane and has second portions, which face respective first portions of the first region. Movement of the second region, relative to the first region, in any direction belonging to the plane modifies the distance between the second portions and the first portions, which in turn modifies a value of the capacitive coupling.

Abstract: The method for manufacturing a micromechanical switch includes manufacturing a hanging bar, on a first semiconductor substrate, equipped at an end thereof with a contact electrode, and a frame projecting from the first semiconductor substrate. A second semiconductor substrate with conductive tracks includes a second input/output electrode and a third starting electrode, and first and second spacers electrically connected to the conductive tracks. The frame is abutted with the first spacers so that the fourth contact electrode abuts on the second input/output electrode in response to an electrical signal provided to the hanging bar by the third starting electrode.

Abstract: A portable apparatus having an accelerometer device and a supporting element in the accelerometer device, having a first body of semiconductor material integrating a sensor element that detects movements of the first body and generates a signal correlated to the detected movement; a second body of semiconductor material that integrates a conditioning electronics and that is electrically connected to the first body; and conductive bumps that provide electrical connection of the first and second bodies to the supporting element. In particular, the conductive bumps connect the first and second bodies to the supporting element without the interposition of any packaging.

Abstract: A movable mass forming a seismic mass is formed starting from an epitaxial layer and is covered by a weighting region of tungsten which has high density. To manufacture the mass, buried conductive regions are formed in the substrate. Then, at the same time, a sacrificial region is formed in the zone where the movable mass is to be formed and oxide insulating regions are formed on the buried conductive regions so as to partially cover them. An epitaxial layer is then grown, using a nucleus region. A tungsten layer is deposited and defined and, using a silicon carbide layer as mask, the suspended structure is defined. Finally, the sacrificial region is removed, forming an air gap.

Abstract: A movable mass forming a seismic mass is formed starting from an epitaxial layer and is covered by a weighting region of tungsten which has high density. To manufacture the mass, buried conductive regions are formed in the substrate. Then, at the same time, a sacrificial region is formed in the zone where the movable mass is to be formed and oxide insulating regions are formed on the buried conductive regions so as to partially cover them. An epitaxial layer is then grown, using a nucleus region. A tungsten layer is deposited and defined and, using a silicon carbide layer as mask, the suspended structure is defined. Finally, the sacrificial region is removed, forming an air gap.