Abstract: A sensor with a movable microstructure including a sensitive element, formed in a first chip of semiconductor material for producing an electrical signal dependent on a movement of at least one movable microstructure relative to a surface of the first chip. The sensitive element is enclosed in a hollow hermetic structure, and circuitry for processing the electrical signal is formed in a second chip of semiconductor material. The hollow hermetic structure includes a metal wall disposed on the surface of the first chip around the sensitive element, and the second chip is fixed to the metal wall.

Abstract: A microactuator comprises a stator element and a rotor element which are capacitively coupled. The rotor element comprises a suspended mass and a plurality of movable drive arms extending radially from the suspended mass and biased at a reference potential. The stator element comprises a plurality of first and second fixed drive arms associated with respective movable drive arms and biased at a first drive potential. A mechanical damping structure is formed by at least one movable damping arm extending radially from the suspended mass and by at least one first and one second fixed damping arm associated with the movable damping arm and biased at said reference potential, to dampen settling oscillations of the rotor element.

Abstract: The method is intended for manufacturing a microintegrated structure, typically a microactuator for a hard-disk drive unit and includes the steps of: forming interconnection regions in a substrate of semiconductor material; forming a monocrystalline epitaxial region; forming lower sinker regions in the monocrystalline epitaxial region and in direct contact with the interconnection regions; forming insulating material regions on a structure portion of the monocrystalline epitaxial region; growing a pseudo-epitaxial region formed by a polycrystalline portion above the structure portion of the monocrystalline epitaxial region and elsewhere a monocrystalline portion; and forming upper sinker regions in the polycrystalline portion of the pseudo-epitaxial region and in direct contact with the lower sinker regions. In this way no PN junctions are present inside the polycrystalline portion of the pseudo-epitaxial region and the structure has a high breakdown voltage.

Abstract: A process for assembling a microactuator on a R/W transducer that includes forming a first wafer of semiconductor material having a plurality of microactuators including suspended regions and fixed regions separated from each other by first trenches; forming a second wafer of semiconductor material comprising blocking regions connecting mobile and fixed intermediate regions separated from each other by second trenches; bonding the two wafers so as to form a composite wafer wherein the suspended regions of the first wafer are connected to the mobile intermediate regions of the second wafer, and the fixed regions of the first wafer are connected to the fixed intermediate regions of the second wafer; cutting the composite wafer into a plurality of units; fixing the mobile intermediate region of each unit to a respective R/W transducer; and removing the blocking regions. The blocking regions are made of silicon oxide, and the intermediate regions are made of polycrystalline silicon.

Abstract: An angular speed sensor comprises a pair of mobile masses which are formed in an epitaxial layer and are anchored to one another and to the remainder of the device by anchorage elements. The mobile masses are symmetrical with one another, and have first mobile excitation electrodes which are intercalated with respective first fixed excitation electrodes and second mobile detection electrodes which are intercalated with second fixed detection electrodes. The first mobile and fixed excitation electrodes extend in a first direction and the second mobile and fixed detection electrodes extend in a second direction which is perpendicular to the first direction and is disposed on a single plane parallel to the surface of the device.

Abstract: An inertial sensor having an inner stator and an outer rotor that are electrostatically coupled together by mobile sensor arms and fixed sensor arms. The rotor is connected to a calibration microactuator comprising four sets of actuator elements arranged one for each quadrant of the inertial sensor. There are two actuators making up each set. The actuators are identical to each other, are angularly equidistant, and each comprises a mobile actuator arm connected to the rotor and bearing a plurality of mobile actuator electrodes, and a pair of fixed actuator arms which are set on opposite sides with respect to the corresponding mobile actuator arm and bear a plurality of fixed actuator electrodes. The mobile actuator electrodes and fixed actuator electrodes are connected to a driving unit which biases them so as to cause a preset motion of the rotor, the motion being detected by a sensing unit connected to the fixed sensor arms.

Abstract: To reduce the risk of breakage of the moving parts of an integrated microstructure during manufacture steps causing mechanical stresses to the moving parts, a temporary immobilization and support structure is formed, whereby a moving region of the microstructure is temporarily integral with the fixed region. The temporary structure is removed at the end of the assembly operations by non-mechanical removal methods. According to one solution, the temporary structure is formed by a fusible element removed by melting or evaporation, by applying a sufficient quantity of energy thereto. Alternatively, a structural region of polymer material is formed in the trench separating the moving part from the fixed part, or an adhesive material layer sensitive to ultraviolet radiation is applied.

Abstract: An angular speed sensor comprises a pair of mobile masses which are formed in an epitaxial layer and are anchored to one another and to the remainder of the device by anchorage elements. The mobile masses are symmetrical with one another, and have first mobile excitation electrodes which are intercalated with respective first fixed excitation electrodes and second mobile detection electrodes which are intercalated with second fixed detection electrodes. The first mobile and fixed excitation electrodes extend in a first direction and the second mobile and fixed detection electrodes extend in a second direction which is perpendicular to the first direction and is disposed on a single plane parallel to the surface of the device.

Abstract: The electronic device is formed in a die including a body of semiconductor material having a first face covered by a covering structure and a second face. An integral thermal spreader of metal is grown galvanically on the second face during the manufacture of a wafer, prior to cutting into dice. The covering structure comprises a passivation region and a protective region of opaque polyimide; the protective region and the passivation region are opened above the contact pads for the passage of leads.

Abstract: The integrated inductor comprises a coil of metal which is formed in the second metal level. The coil is supported by a bracket extending above spaced from a semiconductor material body by an air gap obtained by removing a sacrificial region formed in the first metal level. The bracket is carried by the semiconductor material body through support regions which are arranged peripherally on the bracket and are separated from one another by through apertures which are connected to the air gap. A thick oxide region extends above the semiconductor material body, below the air gap, to reduce the capacitive coupling between the inductor and the semiconductor material body. The inductor thus has a high quality factor, and is produced by a process compatible with present microelectronics processes.

Abstract: On a substrate of semiconductor material, a sacrificial region is formed and an epitaxial layer is grown; a stress release trench is formed, surrounding an area of the epitaxial layer, where an integrated electromechanical microstructure is to be formed; the wafer is then heat treated, to release residual stress. Subsequently, the stress release trench is filled with a sealing region of dielectric material, and integrated components are formed. Finally, inside the area surrounded by the sealing region, a microstructure definition trench is formed, and the sacrificial region is removed, thus obtaining an integrated microstructure with zero residual stress.

Abstract: To manufacture integrated semiconductor devices comprising chemoresistive gas microsensors, a semiconductor material body is first formed, on the semiconductor material body are successively formed, reciprocally superimposed, a sacrificial region of metallic material, formed at the same time and on the same level as metallic connection regions for the sensor, a heater element, electrically and physically separated from the sacrificial region and a gas sensitive element, electrically and physically separated from the heater element; openings are formed laterally with respect to the heater element and to the gas sensitive element, which extend as far as the sacrificial region and through which the sacrificial region is removed at the end of the manufacturing process.

Abstract: An electrical connection structure having connection elements which electrically connect a movable part to a fixed part of a microelectromechanical device, for example a microactuator. The movable part and fixed part are separated by trenches and are mechanically connected by spring elements, which determine, together with the connection elements, the torsional rigidity of the microelectromechanical device. Each connection element is formed by multiple sub-arms connected in parallel and having a common movable anchorage region anchored to the movable part, and a common fixed anchorage region anchored to the fixed part, whereby the mechanical resistance of the connection elements is negligible. The sub-arms have a width equal to a sub-multiple of the width necessary in case of a single connection element for the latter to have a preset electrical resistance, which is determined in the design.

Abstract: The microstructure, of semiconductor material, includes a micromotor and an encapsulation structure. The micromotor is externally delimited by a first and a second faces, opposed to one another, and by a side delimitation trench. The encapsulation structure surrounds the micromotor and has a bottom portion facing the second face of the micromotor, and an outer lateral portion facing the side delimitation trench. An outer separation trench extends through the bottom portion of the encapsulation structure, separates a mobile region from the external side portion, and defines, together with the side delimitation trench, a labyrinthic path for contaminating particles. A sealing ring extends on the bottom portion of the encapsulation structure around an inner separation trench separating the mobile region from a fixed central region and closes a gap between the bottom portion and a mobile component connected to the mobile region of the encapsulation structure.

Abstract: An inertial sensor has a sensing element formed on one surface of a chip of semiconductor material and which is movable with respect to the chip. The sensing element is enclosed in a sealed hollow structure, in which the hollow structure includes a metal wall disposed on the surface around the sensing element, and a closure plate fixed to the wall.

Abstract: The integrated microactuator has a stator and a rotor having a circular extension with radial arms which support electrodes extending in a substantially circumferential direction and interleaved with one another. For the manufacture, first a sacrificial region is formed on a silicon substrate; an epitaxial layer is then grown; the circuitry electronic components and the biasing conductive regions are formed; subsequently a portion of substrate beneath the sacrificial region is removed, forming an aperture extending through the entire substrate; the epitaxial layer is excavated to define and separate from one another the rotor and the stator, and finally the sacrificial region is removed to release the mobile structures from the remainder of the chip.

Abstract: A microactuator comprises an outer stator and an inner rotor electrostatically coupled to a stator. The rotor comprises a suspended mass with a substantially circular shape, and a plurality of mobile arms extending radially towards the exterior, starting from the suspended mass. The stator has a plurality of pairs of fixed arms extending radially to the suspended mass, a respective mobile arm being arranged between each pair of fixed arms. The fixed arms are divided into fixed drive arms connected to a drive stage for actuating the microactuator, and into fixed measure arms connected to a measure stage, and define a capacitive uncoupling structure.

Abstract: An integrated semiconductor device comprises, reciprocally superimposed, a thermally insulating region; a thermal conduction region of a high thermal conductivity material; a passivation oxide layer; and a gas sensitive element. The thermal conduction region defines a preferential path towards the gas sensitive element for the heat generated by the heater element, thereby the heat dispersed towards the substrate is negligible during the operation of the device.

Abstract: The acceleration sensor is formed in a monocrystalline silicon wafer forming part of a dedicated SOI substrate presenting a first and second monocrystalline silicon wafer separated by an insulting layer having an air gap. A well is formed in the second wafer over the air gap and is subsequently trenched up to the air gap to release the monocrystalline silicon mass forming the movable mass of the sensor; the movable mass has two numbers of movable electrodes facing respective pluralities of fixed electrodes. In the idle condition, each movable electrode is separated by different distances from the two fixed electrodes facing the movable electrode.

Abstract: An angular speed sensor comprises a pair of mobile masses which are formed in an epitaxial layer and are anchored to one another and to the remainder of the device by anchorage elements. The mobile masses are symmetrical with one another, and have first mobile excitation electrodes which are intercalated with respective first fixed excitation electrodes and second mobile detection electrodes which are intercalated with second fixed detection electrodes. The first mobile and fixed excitation electrodes extend in a first direction and the second mobile and fixed detection electrodes extend in a second direction which is perpendicular to the first direction and is disposed on a single plane parallel to the surface of the device.