Abstract: A head (130) for a disk storage device having a plurality of tracks (117) divided into memory cells (234), including a magnetic circuit (205, 230a, 230b, 250a, 250b) for reading the memory cells (234) in succession, the magnetic circuit (205, 230a, 230b, 250a, 250b) for reading the memory cells (234) including at least two partial reading components (206a, 230a, 250a; 206b, 230b, 250b) each for reading a portion (234a; 234b) of each memory cell (234), the portions (234a; 234b) being arranged transversely relative to the longitudinal axis (233) of the corresponding track (117).

Abstract: A bi-dimensional position sensor that can be advantageously used in the turn system controlled from the steering wheel of a vehicle. The sensor includes a permanent magnet fixed to a control lever so as to move in a plane along first and second directions and to rotate about a third direction orthogonal to the preceding ones. The permanent magnet is movable with respect to an integrated device including a first group of sensor elements arranged spaced along the first direction, a second group of sensor elements arranged spaced along the second direction and a third group of sensor elements detecting the angular position of the permanent magnet. Electronics integrated with the sensor elements generate a code associated with each position which the permanent magnet may assume and generate a control signal corresponding to the desired function.

Abstract: A method for the formation of a region of silicon dioxide on a substrate of monocrystalline silicon. The epitaxial growth of a silicon layer, the opening of holes in the silicon layer above the silicon dioxide region, and the removal of the silicon dioxide which constitutes the region by means of chemical attack through the holes until a silicon diaphragm, attached to the substrate along the edges and separated therefrom by a space, is produced. In order to form an absolute pressure microsensor, the space has to be sealed. To do this, the method provides for the holes to have diameters smaller than the thickness of the diaphragm and to be closed by the formation of a silicon dioxide layer by vapor-phase deposition at atmospheric pressure.

Abstract: An inkjet print head includes an ink drop emission mini-gun and a drop emission sensor integrated in a chip of semiconductor material. The mini-gun is formed by an ink chamber and a nozzle in communication with the ink chamber and the drop emission sensor includes a resistive element arranged in a position adjacent to the ink chamber. The resistance of the resistive element depends on the pressure exerted thereon, so that when the mini-gun emits an ink drop, it is subjected to a recoil movement which causes a change of pressure and hence of resistance in the resistive element; this change in resistance may be detected through suitable circuitry to identify whether and when a drop of ink has been emitted.

Abstract: A microelectromechanical structure includes a rotor element having a barycentric axis and suspended regions arranged a distance with respect to the barycentric axis. The rotor element is supported and biased via a suspension structure having a single anchoring portion extending along the barycentric axis. The single anchoring portion is integral with a body of semiconductor material on which electric connections are formed.

Abstract: In an actuator device for hard disks a suspension element carries a slider that is subject to undesired vibrations which give rise to rotations of the slider with respect to a nominal position. An electrostatically controlled position-control structure is arranged between the suspension and the slider and is controlled in an active way so as to generate torsions of the platform that counter the undesired rotations. The position-control structure comprises a platform of conductive material and control electrodes arranged underneath the platform. The platform is connected to a load-bearing structure by spring elements that enable movements of roll and pitch. Four control electrodes are arranged according to the quadrants of a square and can be selectively biased for generating electrical forces acting on the platform.

Abstract: A microactuator is attached to a first face of a coupling formed on a suspension, so that an R/W transducer projects from an opposite face. A hole in the coupling permits passage of an adhesive mass interposed between a rotor of the microactuator and the R/W transducer. A strip of adhesive material extends between a die accommodating the microactuator and the coupling, and externally surrounds the microactuator. The coupling acts as a protective shield for the microactuator, both mechanically and electrically. The coupling covers the microactuator at the front, and prevents foreign particles from blocking the microactuator. In addition, the coupling electrically insulates the R/W transducer, which is sensitive to magnetic fields, from regions of the microactuator biased to a high voltage. With the coupling, the strip forms a sealing structure, which in practice surrounds the microactuator on all sides.

Abstract: An electrostatic cleaning structure of a hard disk driver is formed by a plurality of concentric conductive regions to which biasing pulse trains are supplied. Each biased conductive region generates an electric field attracting any dielectric particle. The pulse trains supplied to immediately adjacent conductive regions are phase-shifted by a predetermined time and in a direction linked to a desired direction of removal for the electrostatic particles. Voltage pulses sent to each conductive region are delayed with respect to voltage pulses sent to an immediately preceding conductive region in the direction of desired removal, and are advanced with respect the voltage pulses sent to an immediately successive conductive region.

Abstract: The integrated electronic device comprises a protection structure of metal, extending vertically and laterally to and along a predominant part of the periphery of an electronic component integrated underneath the pad region. The protection structure comprises a substantially annular region formed from a second metal layer and absorbing the stresses exerted on the pad during wire bonding. The annular region may be floating or form part of the path connecting the pad to the electronic component.

Abstract: The microstructure, of semiconductor material, includes a micromotor and an encapsulation structure. The micromotor is externally delimited by a first and a second faces, opposed to one another, and by a side delimitation trench. The encapsulation structure surrounds the micromotor and has a bottom portion facing the second face of the micromotor, and an outer lateral portion facing the side delimitation trench. An outer separation trench extends through the bottom portion of the encapsulation structure, separates a mobile region from the external side portion, and defines, together with the side delimitation trench, a labyrinthic path for contaminating particles. A sealing ring extends on the bottom portion of the encapsulation structure around an inner separation trench separating the mobile region from a fixed central region and closes a gap between the bottom portion and a mobile component connected to the mobile region of the encapsulation structure.

Abstract: The integrated inductor comprises a coil of metal which is formed in the second metal level. The coil is supported by a bracket extending above spaced from a semiconductor material body by an air gap obtained by removing a sacrificial region formed in the first metal level. The bracket is carried by the semiconductor material body through support regions which are arranged peripherally on the bracket and are separated from one another by through apertures which are connected to the air gap. A thick oxide region extends above the semiconductor material body, below the air gap, to reduce the capacitive coupling between the inductor and the semiconductor material body. The inductor thus has a high quality factor, and is produced by a process compatible with present microelectronics processes.

Abstract: The method inlcudes the steps of forming a sacrificial buried region of insulating material on a substrate of monocrystalline semiconductor material, epitaxially growing a first semiconductor material layer on the substrate, the first semiconductor material layer including a polycrystalline region over the sacrificial buried region and a monocrystalline region elsewhere, the substrate and the semiconductor material layer surrounding the sacrificial buried region on all sides, and removing the sacrificial buried region. The portion of the polycrystalline region surrounded by the trench thus forms a suspended structure separated and isolated thermally from the rest of the semiconductor material layer. Using microelectronics processes, electronic components are formed in the monocrystalline region, and dedicated regions are formed at the suspended structure, so that the electronic components are integrated in the same chip with static, kinematic or dynamic microstructures.

Abstract: An integrated device comprises an epitaxial layer forming a first and a second region separated by at least one air gap. The first region forms, for example, a suspended mass of an accelerometer. A bridge element extends on the air gap and has a suspended electrical connection line electrically connecting the first and the second region and a protective structure of etch-resistant material, which surrounds the electrical connection line on all sides. The protective structure is formed by a lower portion of silicon nitride and an upper portion of silicon carbide, the silicon carbide surrounding the electrical connection line at the upper and lateral sides.

Abstract: The integrated microactuator has a stator and a rotor having a circular extension with radial arms which support electrodes extending in a substantially circumferential direction and interleaved with one another. For the manufacture, first a sacrificial region is formed on a silicon substrate; an epitaxial layer is then grown; the circuitry electronic components and the biasing conductive regions are formed; subsequently a. portion of substrate beneath the sacrificial region is removed, forming an aperture extending through the entire substrate; the epitaxial layer is excavated to define and separate from one another the rotor and the stator, and finally the sacrificial region is removed to release the mobile structures from the remainder of the chip.

Abstract: The method comprises the steps of: forming an integrated device including a microactuator in a semiconductor material wafer; forming an immobilization structure of organic material on the wafer; simultaneously forming a securing flange integral with the microactuator and electrical connections for connecting the integrated device to a read/write head; bonding a transducer supporting the read/write head to the securing flange; connecting the electrical connections to the read/write head; cutting the wafer into dices; bonding the microactuator to a suspension; and removing the immobilization structure.

Abstract: The integrated inductor comprises a coil of metal which is formed in the second metal level. The coil is supported by a bracket extending above spaced from a semiconductor material body by an air gap obtained by removing a sacrificial region formed in the first metal level. The bracket is carried by the semiconductor material body through support regions which are arranged peripherally on the bracket and are separated from one another by through apertures which are connected to the air gap. A thick oxide region extends above the semiconductor material body, below the air gap, to reduce the capacitive coupling between the inductor and the semiconductor material body. The inductor thus has a high quality factor, and is produced by a process compatible with present microelectronics processes.

Abstract: The method is intended for manufacturing a microintegrated structure, typically a microactuator for a hard-disk drive unit and includes the steps of: forming interconnection regions in a substrate of semiconductor material; forming a monocrystalline epitaxial region; forming lower sinker regions in the monocrystalline epitaxial region and in direct contact with the interconnection regions; forming insulating material regions on a structure portion of the monocrystalline epitaxial region; growing a pseudo-epitaxial region formed by a polycrystalline portion above the structure portion of the monocrystalline epitaxial region and elsewhere a monocrystalline portion; and forming upper sinker regions in the polycrystalline portion of the pseudo-epitaxial region and in direct contact with the lower sinker regions. In this way no PN junctions are present inside the polycrystalline portion of the pseudo-epitaxial region and the structure has a high breakdown voltage.

Abstract: Described herein is a read/write transducer for a hard disk drivewith dual actuation stage, comprising at least one hard disk and at least one suspension carrying the read/write transducer. The read/write transducer comprises a supporting body having a substantially parallelepipedal shape, a read/write head arranged on a front face of the supporting body, and a grating defined on one of the side faces of the supporting body during the process of manufacture of the read/write transducer. The grating enables measurement of the position of the read/write transducer with respect to the corresponding suspension in an optical way using a laser transmitter emitting and directing towards the grating a laser beam, and a laser receiver arranged to intercept the laser beam reflected by the grating and outputting a position signal on the basis of which it is possible to calculate, in a simple way, the position of the read/write transducer with respect to the corresponding suspension.

Abstract: A method for the electrical and/or mechanical interconnection of components of a microelectronic system includes at least one first component and at least one second component to be connected, and at least one local Joule-effect micro-heater is incorporated in one of the first and second components at a respective soldering point therebetween. The method includes supplying electrical energy to the micro-heater to utilize the heat produced therefrom by the Joule effect to solder the first and second components at the respective soldering point.

Abstract: The pressure sensor is integrated in an SOI (Silicon-on-Insulator) substrate using the insulating layer as a sacrificial layer, which is partly removed by chemical etching to form the diaphragm. To fabricate the sensor, after forming the piezoresistive elements and the electronic components integrated in the same chip, trenches are formed in the upper wafer of the substrate and extending from the surface to the layer of insulating material; the layer of insulating material is chemically etched through the trenches to form an opening beneath the diaphragm; and a dielectric layer is deposited to outwardly close the trenches and the opening. Thus, the process is greatly simplified, and numerous packaging problems eliminated.