Abstract: The method for manufacturing a micromechanical switch includes manufacturing a hanging bar, on a first semiconductor substrate, equipped at an end thereof with a contact electrode, and a frame projecting from the first semiconductor substrate. A second semiconductor substrate with conductive tracks includes a second input/output electrode and a third starting electrode, and first and second spacers electrically connected to the conductive tracks. The frame is abutted with the first spacers so that the fourth contact electrode abuts on the second input/output electrode in response to an electrical signal provided to the hanging bar by the third starting electrode.

Abstract: The method for manufacturing a micromechanical switch includes manufacturing a hanging bar, on a first semiconductor substrate, equipped at an end thereof with a contact electrode, and a frame projecting from the first semiconductor substrate. A second semiconductor substrate with conductive tracks includes a second input/output electrode and a third starting electrode, and first and second spacers electrically connected to the conductive tracks. The frame is abutted with the first spacers so that the fourth contact electrode abuts on the second input/output electrode in response to an electrical signal provided to the hanging bar by the third starting electrode.

Abstract: In an actuator device for hard disks a suspension element carries a slider that is subject to undesired vibrations which give rise to rotations of the slider with respect to a nominal position. An electrostatically controlled position-control structure is arranged between the suspension and the slider and is controlled in an active way so as to generate torsions of the platform that counter the undesired rotations. The position-control structure comprises a platform of conductive material and control electrodes arranged underneath the platform. The platform is connected to a load-bearing structure by spring elements that enable movements of roll and pitch. Four control electrodes are arranged according to the quadrants of a square and can be selectively biased for generating electrical forces acting on the platform.

Abstract: A planar inertial sensor includes a first region and a second region of semiconductor material. The second region is capacitively coupled, and mobile with respect to the first region. The second region extends in a plane and has second portions, which face respective first portions of the first region. Movement of the second region, relative to the first region, in any direction belonging to the plane modifies the distance between the second portions and the first portions, which in turn modifies a value of the capacitive coupling.

Abstract: The electronic device is formed in a die including a body of semiconductor material having a first face covered by a covering structure and a second face. An integral thermal spreader of metal is grown galvanically on the second face during the manufacture of a wafer, prior to cutting into dice. The covering structure comprises a passivation region and a protective region of opaque polyimide; the protective region and the passivation region are opened above the contact pads for the passage of leads.

Abstract: Method for manufacturing a semiconductor pressure sensor, wherein, in a silicon substrate, trenches are dug and delimit walls; a closing layer is epitaxially grown, that closes the trenches at the top and forms a suspended membrane; a heat treatment is performed so as to cause migration of the silicon of the walls and to form a closed cavity underneath the suspended membrane; and structures are formed for transducing the deflection of the suspended membrane into electrical signals.

Abstract: Described herein is a read/write transducer for a hard disk drivewith dual actuation stage, comprising at least one hard disk and at least one suspension carrying the read/write transducer. The read/write transducer comprises a supporting body having a substantially parallelepipedal shape, a read/write head arranged on a front face of the supporting body, and a grating defined on one of the side faces of the supporting body during the process of manufacture of the read/write transducer. The grating enables measurement of the position of the read/write transducer with respect to the corresponding suspension in an optical way using a laser transmitter emitting and directing towards the grating a laser beam, and a laser receiver arranged to intercept the laser beam reflected by the grating and outputting a position signal on the basis of which it is possible to calculate, in a simple way, the position of the read/write transducer with respect to the corresponding suspension.

Abstract: A process for manufacturing a semiconductor wafer integrating electronic devices and a structure for electromagnetic decoupling are disclosed. The method includes providing a wafer of semiconductor material having a substrate; forming a plurality of first mutually adjacent trenches, open on a first face of the wafer, which have a depth and a width and define walls); by thermal oxidation, completely oxidizing the walls and filling at least partially the first trenches, so as to form an insulating structure of dielectric material; and removing one portion of the substrate comprised between the insulating structure and a second face of the wafer, opposite to the first face of the wafer.

Abstract: The electronic device is formed in a die including a body of semiconductor material having a first face covered by a covering structure and a second face. An integral thermal spreader of metal is grown galvanically on the second face during the manufacture of a wafer, prior to cutting into dice. The covering structure comprises a passivation region and a protective region of opaque polyimide; the protective region and the passivation region are opened above the contact pads for the passage of leads.

Abstract: A microactuator comprises a motor element including a stator and a rotor capacitively coupled to the stator; an actuator element having a circular structure; and a transmission structure interposed between the motor element and the actuator element to transmit a rotary movement of the motor element into a corresponding rotary movement of the actuator element. In particular, the transmission structure comprises a pair of transmission arms identical to each other, arranged symmetrically with respect to a symmetry axis of the microactuator. The transmission arms extend between two approximately diametrically opposed regions of the rotor to diametrically opposed regions of the actuator element.

Abstract: The electronic device is formed in a die including a body of semiconductor material having a first face covered by a covering structure and a second face. An integral thermal spreader of metal is grown galvanically on the second face during the manufacture of a wafer, prior to cutting into dice. The covering structure comprises a passivation region and a protective region of opaque polyimide; the protective region and the passivation region are opened above the contact pads for the passage of leads.

Abstract: A method of producing suspended elements for electrical connection between two portions of a micro-mechanism that can move relative to one another provides for the formation of a layer of sacrificial material, the formation of the electrical connection elements on the layer of sacrificial material, and the selective removal of the layer of sacrificial material beneath the electrical connecting elements, the layer of sacrificial material being a thin film with at least one adhesive side that can be applied dry to the surface of the micro-mechanism.

Abstract: The method for manufacturing a micromechanical switch includes manufacturing a hanging bar, on a first semiconductor substrate, equipped at an end thereof with a contact electrode, and a frame projecting from the first semiconductor substrate. A second semiconductor substrate with conductive tracks includes a second input/output electrode and a third starting electrode, and first and second spacers electrically connected to the conductive tracks. The frame is abutted with the first spacers so that the fourth contact electrode abuts on the second input/output electrode in response to an electrical signal provided to the hanging bar by the third starting electrode.

Abstract: The manufacture process includes: forming a first wafer of semiconductor material housing integrated electronic components forming a microactuator control circuit and a signal preamplification circuit; forming microactuators, each including a rotor and a stator, in a surface portion of a second wafer of semiconductor material; attaching the second wafer to the first wafer, with the surface portion of the second wafer facing the first wafer; thinning the second wafer; attaching the second wafer to a third wafer to obtain a composite wafer; thinning the first wafer; cutting the composite wafer into a plurality of dice connected to a protection chip; removing the protection chip; attaching read/write transducers to the dice; and attaching the dice to supporting blocks for hard-disk drivers.

Abstract: A hard disk read/write unit is formed in a monolithic body of semiconductor material, including a suspension structure, a coupling or flexure element integral with the suspension structure, and a microactuator, integral with the coupling. The monolithic body has a first portion accommodating integrated electronic components, and a second portion, accommodating the coupling and the microactuator. The coupling is formed from a central region, accommodating the microactuator; an annular region, separated from the central region by a first trench, and from the suspension by a second trench; a first pair of suspension arms, extending between the central region and the annular region, along a first axis; and a second pair of suspension arms, extending between the annular region and the suspension structure, along a second axis perpendicular to the first axis.

Abstract: The method is intended for manufacturing a microintegrated structure, typically a microactuator for a hard-disk drive unit and includes the steps of: forming interconnection regions in a substrate of semiconductor material; forming a monocrystalline epitaxial region; forming lower sinker regions in the monocrystalline epitaxial region and in direct contact with the interconnection regions; forming insulating material regions on a structure portion of the monocrystalline epitaxial region; growing a pseudo-epitaxial region formed by a polycrystalline portion above the structure portion of the monocrystalline epitaxial region and elsewhere a monocrystalline portion; and forming upper sinker regions in the polycrystalline portion of the pseudo-epitaxial region and in direct contact with the lower sinker regions. In this way no PN junctions are present inside the polycrystalline portion of the pseudo-epitaxial region and the structure has a high breakdown voltage.

Abstract: The integrated electronic device comprises a protection structure of metal, extending vertically and laterally to and along a predominant part of the periphery of an electronic component integrated underneath the pad region. The protection structure comprises a substantially annular region formed from a second metal layer and absorbing the stresses exerted on the pad during wire bonding. The annular region may be floating or form part of the path connecting the pad to the electronic component.

Abstract: An electrical connection structure having connection elements which electrically connect a movable part to a fixed part of a microelectromechanical device, for example a microactuator. The movable part and fixed part are separated by trenches and are mechanically connected by spring elements, which determine, together with the connection elements, the torsional rigidity of the microelectromechanical device. Each connection element is formed by multiple sub-arms connected in parallel and having a common movable anchorage region anchored to the movable part, and a common fixed anchorage region anchored to the fixed part, whereby the mechanical resistance of the connection elements is negligible. The sub-arms have a width equal to a sub-multiple of the width necessary in case of a single connection element for the latter to have a preset electrical resistance, which is determined in the design.

Abstract: A process for manufacturing a semiconductor wafer integrating electronic devices and a structure for electromagnetic decoupling are disclosed. The method includes providing a wafer of semiconductor material having a substrate; forming a plurality of first mutually adjacent trenches, open on a first face of the wafer, which have a depth and a width and define walls); by thermal oxidation, completely oxidizing the walls and filling at least partially the first trenches, so as to form an insulating structure of dielectric material; and removing one portion of the substrate comprised between the insulating structure and a second face of the wafer, opposite to the first face of the wafer.

Abstract: An inertial sensor having a stator and a rotor made of semiconductor material and electrostatically coupled together, and a microactuator also made of semiconductor material, coupled to the rotor and controlled so as to move the rotor itself and thus compensate for the position offset thereof.