Abstract: Embodiments of three-dimensional (3D) memory devices and methods for forming the same are disclosed. In an example, a 3D memory device includes a substrate, a memory stack on the substrate, a plurality of channel structures each extending vertically through the memory stack, an isolation structure, and an alignment mark. The memory stack includes a plurality of interleaved conductive layers and dielectric layers. An outmost one of the conductive layers toward the substrate is a source select gate line (SSG). The isolation structure extends vertically into the substrate and surrounds at least one of the channel structures in a plan view to separate the SSG and the at least one channel structure. The alignment mark extends vertically into the substrate and is coplanar with the isolation structure.

Abstract: According to embodiments of the present invention, an apparatus is provided. The apparatus includes a relief valve having an inlet pathway arranged to receive a medium flowing in the apparatus, and an outlet pathway arranged for the medium from the inlet pathway to flow through at a relief state to relieve pressure in the apparatus, an outlet pressure sensor arranged to determine an outlet pressure associated with the outlet pathway, and a processing circuit configured to determine a status of the relief valve based on the outlet pressure.

Abstract: A slide and pivot assembly for a process module bias assembly of a substrate processing system includes a slide torsion plate, one or more rails and bearings, a bias mounting plate, and a hinge assembly. The one or more rails and bearings are attached to the slide torsion plate or a processing chamber. The bias mounting plate is configured to hold a portion of a process module for processing a substrate. The hinge assembly is attached to the slide torsion plate and the bias mounting plate. The slide torsion plate, the bias mounting plate and the hinge assembly are configured to slide via the one or more rails and bearings in a lateral direction relative to the processing chamber. The bias mounting plate is configured to pivot relative to the slide torsion plate while the slide and pivot assembly is in at least a partially pulled out state.

Abstract: A method of fabricating a three-dimensional memory includes forming a laminated structure including stacked dummy gate layers and interlayer insulation layers on one side of a substrate. The respective adjacent dummy gate layers and interlayer insulation layers form staircase stairs. At least a part of the interlayer insulation layer of each of the staircase stairs is exposed. The method also includes forming a buffer layer covering the staircase stairs. The method further includes removing a part of the buffer layer covering the sidewalls of the staircase stairs to form spacing grooves. The method further includes forming a dielectric layer that fills the spacing grooves and covers the staircase stairs. The method further includes forming a contact hole penetrating through the dielectric layer and the buffer layer and extending to the dummy gate layer farthest from the substrate.

Abstract: A system comprises a process module, a pump, and an adapter plate. The process module processes a semiconductor substrate, has an opening at a lower end, and includes a poppet valve above the opening. The pump operates in conjunction with the poppet valve to evacuate gases from the process module. The adapter plate is arranged above the pump and below the opening at the lower end of the process module. The adapter plate includes an inner cavity coincident with the opening and an outer perimeter smaller than the lower end of the process module. The adapter plate includes a first set of bores arranged around the inner cavity and a second set of bores arranged along the outer perimeter. First fasteners fasten the pump to the adapter plate through the first set of bores. Second fasteners fasten the adapter plate to the process module through the second set of bores.

Abstract: Disclosed in the present application is a blade and an axial flow impeller using same. The blade comprises a blade tip, a blade root, a leading edge, a trailing edge, an upper surface and a lower surface. The upper surface and lower surface are disposed opposite each other; the blade tip, the blade root, the leading edge and the trailing edge surround the upper surface and the lower surface, and connect the upper surface and the lower surface. The blade is rotatable about a rotation axis, the rotation axis being perpendicular to a normal plane. The blade tip comprises a blade tip base part and a blade tip trailing part, the blade tip base part being close to the leading edge, and the blade tip trailing part being close to the trailing edge and being bent upwards relative to the blade tip base part.

Abstract: The present application discloses a blade, comprising a blade tip, a blade root, a leading edge, and a trailing edge, wherein the leading edge and the trailing edge each extend from the blade tip to the blade root; the blade may rotate around a rotation axis, and the rotation axis and a normal plane of the rotation axis perpendicularly intersect at the foot of the perpendicular; a projection of the leading edge on the normal plane along the rotation axis is a first curve, and the first curve has an even number of inflection points. The blade of the present application can reduce noise and improve aerodynamic performance when the blade rotates.

Abstract: The present invention provides methods and compositions for treating or preventing melanoma with S-equol. The S-equol may be administered alone or in combination with one or more cytotoxic or immunotherapeutic compound or molecule.

Abstract: A blade (112) includes an upper surface and a lower surface, the upper surface being a pressure face (212), and the lower surface being a suction face (214), a blade tip (216) and a blade base (218), a leading edge (222) and a trailing edge (220), where the pressure face (212) and the suction face (214) each extend from the blade tip (216) to the blade base (218), and each extend from the leading edge (222) to the trailing edge (220). The blade (112) further includes a bent part (262), the bent part (262) being arched from the pressure face (212) toward the suction face (214), where the bent part (262) has a lowest point in a radial cross section of the blade (112), and a connecting line (252) of the lowest points extends in a direction from the leading edge (222) to the trailing edge (220).

Abstract: Systems and methods for generating candidate designs and selecting a fracturing position design scheme for a horizontal well to be fractured based on fracturing potential are disclosed. A fracturing potential value of each designed fracturing point or each fracturing point is calculated using obtained values of various indexes of various depth points. A first corresponding relation between fracture conductivity value and the fracturing potential value and a second corresponding relation between a fracture half length and the fracturing potential value is determined. Corresponding first simulated production data for each candidate design is generated, and the candidate design with a highest predicted net present value is selected as the fracturing position design scheme which provides higher rationality and practicability to better guide development.

Abstract: The present invention discloses a compact vehicle-mounted hydrogen-oxygen generator. In the fluid path, the water circulation outlet of the water tank is in communication via one of the two one-way throttle valves with the water pump, which is in communication with the electrolytic tank of the hydrogen-oxygen generator, which is in communication with the water circulation inlet of the water tank through the other one-way throttle valve, and the gas outlet of the water tank is in communication with an engine air-inlet via the steam-water separator and the dry flame arrester in turn. In the circuit, the water pump and the electrolytic tank of the hydrogen-oxygen generator are connected in parallel to the ends of the positive and negative electrodes of the vehicle power supply, respectively; the switch, the fuse and the electrolytic tank of the hydrogen-oxygen generator are connected in series to the vehicle power supply.

Abstract: A three-dimensional (3D) memory device is provided. In an example, the 3D memory device includes a staircase and a plurality of groups of support structures through the staircase. The plurality of groups of support structures are arranged in a first direction, and each of the groups of support structures comprises three support structures, wherein projections of the three support structures form a triangular shape in a plane parallel to the first direction.

Abstract: Three-dimensional (3D) memory devices and methods for forming the same are disclosed. In certain aspects, a 3D memory device includes a substrate, a stack structure laterally formed on the substrate and having a central area and a staircase area, a plurality of channel structures extending vertically in the central area, a plurality of dummy channel structures extending vertically in the staircase area, and a plurality of contact plugs formed in the staircase area and being electrically connected to the stack structure. A vertical projection of at least one of the dummy channel structures on a lateral surface of the substrate includes a two-dimensional shape with directionality.

Abstract: Aspects of the disclosure provide semiconductor devices. For example, a semiconductor device includes a substrate having a first region and a second region along a first direction that is parallel to a main surface of the substrate. Then, the semiconductor device includes a memory stack that includes a first stack of alternating gate layers and insulating layers and a second stack of alternating gate layers and insulating layers along a second direction that is perpendicular to the main surface of the substrate. Further, the semiconductor device includes a joint insulating layer in the second region and a third stack of alternating gate layers and insulating layers in the first region between the first stack of alternating gate layers and insulating layers and the second stack of alternating gate layers and insulating layers.

Abstract: The present disclosure provides a method for forming a three-dimensional (3D) memory. In an example, the method includes forming a stack structure having interleaved a plurality of stack first layers and a plurality of stack second layers, forming a stair in the stack structure, the stair having one of the stack first layers on a top surface, and forming a layer of sacrificial material having a first portion over a side surface of the stair and a second portion over the top surface of the stair. The method also includes partially removing the first portion of the layer of sacrificial material using an anisotropic etching process and removing a remaining portion of the first portion of the layer of sacrificial material using an isotropic etching process.

Abstract: Aspects of the disclosure provide methods for fabricating semiconductor devices. In some examples, a method for fabricating a semiconductor device includes forming a stack of layers having a first region and a second region. The stack of layers includes at least a first layer. The method then forms a hard mask layer on the stack of layers in the first region. Then, the method includes patterning the stack of layers in the second region of the semiconductor device. The patterning of the stack of layers in the second region removes a portion of the stack of layers in the second region, and exposes a side of the stack of layers. The method further includes covering at least the side of the stack of layers with a second layer that has a lower remove rate than the first layer, and then the method includes removing the hard mask layer.

Abstract: The present invention provides methods and compositions for modulating molecular markers, and hence treating or preventing breast cancer (e.g., triple-negative breast cancer) and melanoma with a pharmaceutically effective amount of S-equol or a pharmaceutical composition comprising S-equol. The S-equol may be administered alone or in combination with one or more cytotoxic or immunotherapeutic compound or molecule.

Abstract: The present disclosure relates to a three-dimensional memory and a method for manufacturing the same. The three-dimensional memory includes a gate stack structure including a core area and a step area which are disposed in juxtaposition and in direct contact in a first direction; a dummy separation structure penetrating through the step area in the first direction; and a gate separation structure penetrating through the core area in the first direction, the gate separation structure having a first end in contact with the dummy separation structure in the first direction, the dummy separation structure having a second end in contact with the gate separation structure in the first direction, and the first end being located within the second end.

Abstract: Embodiments of three-dimensional (3D) memory devices and methods for forming the same are disclosed. In an example, a 3D memory device includes a substrate, a memory stack on the substrate, a plurality of channel structures each extending vertically through the memory stack, an isolation structure, and an alignment mark. The memory stack includes a plurality of interleaved conductive layers and dielectric layers. An outmost one of the conductive layers toward the substrate is a source select gate line (SSG). The isolation structure extends vertically into the substrate and surrounds at least one of the channel structures in a plan view to separate the SSG and the at least one channel structure. The alignment mark extends vertically into the substrate and is coplanar with the isolation structure.

Abstract: The invention provides an apparatus, for processing a semiconductor device, comprising a first tool which comprises a pressure application component, a guide, and a spacer moveable in the guide. A gap is defined between the spacer and the guide and is operable to allow the spacer to tilt in relation to the guide. The apparatus also comprises a second tool for holding the semiconductor device, wherein the first and second tools are moveable relative to each other between an uncoupled state and a coupled state. The spacer comprises a first portion proximate the pressure application component, wherein in the coupled state, the pressure application component is operable to apply a force as a first pressure to the first portion.