Abstract: Gate-all-around integrated circuit structures having asymmetric source and drain contact structures, and methods of fabricating gate-all-around integrated circuit structures having asymmetric source and drain contact structures, are described. For example, an integrated circuit structure includes a vertical arrangement of nanowires above a fin. A gate stack is over the vertical arrangement of nanowires. A first epitaxial source or drain structure is at a first end of the vertical arrangement of nanowires. A second epitaxial source or drain structure is at a second end of the vertical arrangement of nanowires. A first conductive contact structure is coupled to the first epitaxial source or drain structure. A second conductive contact structure is coupled to the second epitaxial source or drain structure. The second conductive contact structure is deeper along the fin than the first conductive contact structure.

Abstract: Gate-all-around integrated circuit structures having an insulator substrate, and methods of fabricating gate-all-around integrated circuit structures having an insulator substrate, are described. For example, an integrated circuit structure includes a semiconductor fin on an insulator substrate. A vertical arrangement of horizontal nanowires is over the semiconductor fin. A gate stack surrounds a channel region of the vertical arrangement of horizontal nanowires, and the gate stack is overlying a channel region of the semiconductor fin. A pair of epitaxial source or drain structures is at first and second ends of the vertical arrangement of horizontal nanowires and the semiconductor fin.

Abstract: Integrated circuit structures having source or drain structures with abrupt dopant profiles are described. In an example, an integrated circuit structure includes a vertical arrangement of horizontal nanowires. A gate stack is around the vertical arrangement of horizontal nanowires. A first epitaxial source or drain structure is at a first end of the vertical arrangement of horizontal nanowires. A second epitaxial source or drain structure is at a second end of the vertical arrangement of horizontal nanowires. The first and second epitaxial source or drain structures include silicon, phosphorous and arsenic, with an atomic concentration of phosphorous substantially the same as an atomic concentration of arsenic.

Abstract: Gate-all-around structures having devices with source/drain-to-substrate electrical contact are described. An integrated circuit structure includes a first vertical arrangement of horizontal nanowires above a first fin. A first gate stack is over the first vertical arrangement of horizontal nanowires. A first pair of epitaxial source or drain structures is at first and second ends of the first vertical arrangement of horizontal nanowires. One or both of the first pair of epitaxial source or drain structures is directly electrically coupled to the first fin. A second vertical arrangement of horizontal nanowires is above a second fin. A second gate stack is over the second vertical arrangement of horizontal nanowires. A second pair of epitaxial source or drain structures is at first and second ends of the second vertical arrangement of horizontal nanowires. Both of the second pair of epitaxial source or drain structures is electrically isolated from the second fin.

Abstract: Integrated circuit structures having cut metal gates, and methods of fabricating integrated circuit structures having cut metal gates, are described. For example, an integrated circuit structure includes a fin having a portion protruding above a shallow trench isolation (STI) structure. A gate dielectric material layer is over the protruding portion of the fin and over the STI structure. A conductive gate layer is over the gate dielectric material layer. A conductive gate fill material is over the conductive gate layer. A dielectric gate plug is laterally spaced apart from the fin, the dielectric gate plug on but not through the STI structure. The gate dielectric material layer and the conductive gate layer are not along sides of the dielectric gate plug, and the conductive gate fill material is in contact with the sides of the dielectric gate plug.

Abstract: Self-aligned gate endcap (SAGE) architectures with gate-all-around devices, and methods of fabricating self-aligned gate endcap (SAGE) architectures with gate-all-around devices, are described. In an example, an integrated circuit structure includes a semiconductor fin above a substrate and having a length in a first direction. A nanowire is over the semiconductor fin. A gate structure is over the nanowire and the semiconductor fin, the gate structure having a first end opposite a second end in a second direction, orthogonal to the first direction. A pair of gate endcap isolation structures is included, where a first of the pair of gate endcap isolation structures is spaced equally from a first side of the semiconductor fin as a second of the pair of gate endcap isolation structures is spaced from a second side of the semiconductor fin.

Abstract: Gate-all-around integrated circuit structures having oxide sub-fins, and methods of fabricating gate-all-around integrated circuit structures having oxide sub-fins, are described. For example, an integrated circuit structure includes an oxide sub-fin structure having a top and sidewalls. An oxidation catalyst layer is on the top and sidewalls of the oxide sub-fin structure. A vertical arrangement of nanowires is above the oxide sub-fin structure. A gate stack is surrounding the vertical arrangement of nanowires and on at least the portion of the oxidation catalyst layer on the top of the oxide sub-fin structure.

Abstract: Gate-all-around integrated circuit structures having adjacent structures for sub-fin electrical contact are described. For example, an integrated circuit structure includes a semiconductor island on a semiconductor substrate. A vertical arrangement of horizontal nanowires is above a fin protruding from the semiconductor substrate. A channel region of the vertical arrangement of horizontal nanowires is electrically isolated from the fin. The fin is electrically coupled to the semiconductor island. A gate stack is over the vertical arrangement of horizontal nanowires.

Abstract: Gate-all-around integrated circuit structures having nanowires with tight vertical spacing, and methods of fabricating gate-all-around integrated circuit structures having nanowires with tight vertical spacing, are described. For example, an integrated circuit structure includes a vertical arrangement of horizontal silicon nanowires. A vertical spacing between vertically adjacent silicon nanowires is less than 6 nanometers. A gate stack is around the vertical arrangement of horizontal silicon nanowires. A first source or drain structure is at a first end of the vertical arrangement of horizontal silicon nanowires, and a second epitaxial source or drain structure is at a second end of the vertical arrangement of horizontal silicon nanowires.

Abstract: Gate-all-around integrated circuit structures having a removed substrate, and methods of fabricating gate-all-around integrated circuit structures having a removed substrate, are described. For example, an integrated circuit structure includes a vertical arrangement of horizontal nanowires. A gate stack surrounds a channel region of the vertical arrangement of horizontal nanowires. A pair of non-discrete epitaxial source or drain structures is at first and second ends of the vertical arrangement of horizontal nanowires. A pair of dielectric spacers is between the pair of non-discrete epitaxial source or drain structures and the gate stack. The pair of dielectric spacers and the gate stack have co-planar top surfaces. The pair of dielectric spacers, the gate stack and the pair of non-discrete epitaxial source or drain structures have co-planar bottom surfaces.

Abstract: Integrated circuit structures having partitioned source or drain contact structures, and methods of fabricating integrated circuit structures having partitioned source or drain contact structures, are described. For example, an integrated circuit structure includes a fin. A gate stack is over the fin. A first epitaxial source or drain structure is at a first end of the fin. A second epitaxial source or drain structure is at a second end of the fin. A conductive contact structure is coupled to one of the first or the second epitaxial source or drain structures. The conductive contact structure has a first portion partitioned from a second portion.

Abstract: Gate-all-around integrated circuit structures having asymmetric source and drain contact structures, and methods of fabricating gate-all-around integrated circuit structures having asymmetric source and drain contact structures, are described. For example, an integrated circuit structure includes a vertical arrangement of nanowires above a fin. A gate stack is over the vertical arrangement of nanowires. A first epitaxial source or drain structure is at a first end of the vertical arrangement of nanowires. A second epitaxial source or drain structure is at a second end of the vertical arrangement of nanowires. A first conductive contact structure is coupled to the first epitaxial source or drain structure. A second conductive contact structure is coupled to the second epitaxial source or drain structure. The second conductive contact structure is deeper along the fin than the first conductive contact structure.

Abstract: Self-aligned gate endcap (SAGE) architectures with gate-all-around devices, and methods of fabricating self-aligned gate endcap (SAGE) architectures with gate-all-around devices, are described. In an example, an integrated circuit structure includes a semiconductor fin above a substrate and having a length in a first direction. A nanowire is over the semiconductor fin. A gate structure is over the nanowire and the semiconductor fin, the gate structure having a first end opposite a second end in a second direction, orthogonal to the first direction. A pair of gate endcap isolation structures is included, where a first of the pair of gate endcap isolation structures is spaced equally from a first side of the semiconductor fin as a second of the pair of gate endcap isolation structures is spaced from a second side of the semiconductor fin.

Abstract: Gate-all-around integrated circuit structures having source or drain structures with epitaxial nubs, and methods of fabricating gate-all-around integrated circuit structures having source or drain structures with epitaxial nubs, are described. For example, an integrated circuit structure includes a first vertical arrangement of horizontal nanowires and a second vertical arrangement of horizontal nanowires. A first pair of epitaxial source or drain structures includes vertically discrete portions aligned with the first vertical arrangement of horizontal nanowires. A second pair of epitaxial source or drain structures includes vertically discrete portions aligned with the second vertical arrangement of horizontal nanowires. A conductive contact structure is laterally between and in contact with the one of the first pair of epitaxial source or drain structures and the one of the second pair of epitaxial source or drain structures.

Abstract: Gate-all-around integrated circuit structures having oxide sub-fins, and methods of fabricating gate-all-around integrated circuit structures having oxide sub-fins, are described. For example, an integrated circuit structure includes an oxide sub-fin structure having a top and sidewalls. An oxidation catalyst layer is on the top and sidewalls of the oxide sub-fin structure. A vertical arrangement of nanowires is above the oxide sub-fin structure. A gate stack is surrounding the vertical arrangement of nanowires and on at least the portion of the oxidation catalyst layer on the top of the oxide sub-fin structure.

Abstract: Gate-all-around integrated circuit structures having nanowires with tight vertical spacing, and methods of fabricating gate-all-around integrated circuit structures having nanowires with tight vertical spacing, are described. For example, an integrated circuit structure includes a vertical arrangement of horizontal silicon nanowires. A vertical spacing between vertically adjacent silicon nanowires is less than 6 nanometers. A gate stack is around the vertical arrangement of horizontal silicon nanowires. A first source or drain structure is at a first end of the vertical arrangement of horizontal silicon nanowires, and a second epitaxial source or drain structure is at a second end of the vertical arrangement of horizontal silicon nanowires.

Abstract: Gate-all-around integrated circuit structures having a removed substrate, and methods of fabricating gate-all-around integrated circuit structures having a removed substrate, are described. For example, an integrated circuit structure includes a vertical arrangement of horizontal nanowires. A gate stack surrounds a channel region of the vertical arrangement of horizontal nanowires. A pair of non-discrete epitaxial source or drain structures is at first and second ends of the vertical arrangement of horizontal nanowires. A pair of dielectric spacers is between the pair of non-discrete epitaxial source or drain structures and the gate stack. The pair of dielectric spacers and the gate stack have co-planar top surfaces. The pair of dielectric spacers, the gate stack and the pair of non-discrete epitaxial source or drain structures have co-planar bottom surfaces.

Abstract: Wrap-around contact structures for semiconductor nanowires and nanoribbons, and methods of fabricating wrap-around contact structures for semiconductor nanowires and nanoribbons, are described. In an example, an integrated circuit structure includes a semiconductor nanowire above a first portion of a semiconductor sub-fin. A gate structure surrounds a channel portion of the semiconductor nanowire. A source or drain region is at a first side of the gate structure, the source or drain region including an epitaxial structure on a second portion of the semiconductor sub-fin, the epitaxial structure having substantially vertical sidewalls in alignment with the second portion of the semiconductor sub-fin. A conductive contact structure is along sidewalls of the second portion of the semiconductor sub-fin and along the substantially vertical sidewalls of the epitaxial structure.

Abstract: Substrate-less electrostatic discharge (ESD) integrated circuit structures, and methods of fabricating substrate-less electrostatic discharge (ESD) integrated circuit structures, are described. For example, a substrate-less integrated circuit structure includes a first fin and a second fin protruding from a semiconductor pedestal. An N-type region is in the first and second fins. A P-type region is in the semiconductor pedestal. A P/N junction is between the N-type region and the P-type region, the P/N junction on or in the semiconductor pedestal.

Abstract: Gate-all-around integrated circuit structures having source or drain structures with epitaxial nubs, and methods of fabricating gate-all-around integrated circuit structures having source or drain structures with epitaxial nubs, are described. For example, an integrated circuit structure includes a first vertical arrangement of horizontal nanowires and a second vertical arrangement of horizontal nanowires. A first pair of epitaxial source or drain structures includes vertically discrete portions aligned with the first vertical arrangement of horizontal nanowires. A second pair of epitaxial source or drain structures includes vertically discrete portions aligned with the second vertical arrangement of horizontal nanowires. A conductive contact structure is laterally between and in contact with the one of the first pair of epitaxial source or drain structures and the one of the second pair of epitaxial source or drain structures.