Abstract: A service deployment method determining an execution path of a to-be-deployed service, the execution path includes a first execution device and a second execution device; obtaining a first quality of service (QoS) of the first execution device; obtaining a second QoS of the second execution device; calculating a third QoS of the execution path based on the first QoS and the second QoS; obtaining a preset QoS of the to-be-deployed service; making a first determination that a first relationship between the third QoS and the preset QoS meets a preset rule; and deploying, in response to the first determination, the to-be-deployed service on the execution path.

Abstract: A method to control the cooldown of main heat exchangers in liquefied natural gas plant. The method provides for the automated control of a flow rate of a natural gas feed stream through a heat exchanger based on one or more process variables and set points. The flow rate of refrigerant streams through the heat exchanger is controlled by different process variables and set points, and is controlled independently of the flow rate of the natural gas feed stream.

Abstract: The invention relates to a low molecular weight sulfate chondroitin and a preparation method thereof. A low molecular weight chondroitin sulfate with the average molecular weight of less than 1000 Dalton can be obtained by a production process of chondroitin sulfate lyase degradation, deproteinization, filtration and sterilization and drying using macromolecular sulfate chondroitin as a raw material. The low molecular weight Chondroitin sulfate has a narrow molecular weight distribution range, the ratio of chondroitin sulfate disaccharide is 43˜60% and the ratio of chondroitin sulfate tetrasaccharide is 30˜45%, the sum of chondroitin sulfate disaccharide and chondroitin sulfate tetrasaccharide is more than 87%, the total oligosaccharide content of low molecular weight chondroitin sulfate is more than 97% and the protein content is less than 0.

Abstract: The present invention relates to reactor tubes packed with a catalyst system employed to deliberately bias process gas flow toward the hot tube segment and away from the cold segment in order to reduce the circumferential tube temperature variation.

Abstract: The present disclosure discloses a two-layered varied ball diameter packed bed heat storage apparatus and a method of manufacturing a heat storage ball. By arranging large-diameter heat storage balls at an upper layer of a packed bed heat storage apparatus and small-diameter heat storage balls at a lower layer thereof; the packed bed heat storage structure comprehensively considers two important evaluation indicators for a heat storage apparatus: heat storage rate and heat storage density, thereby implementing a design principle of maximizing the heat storage rate density of the packed bed heat storage apparatus; by achieving a best combination of heat storage ball diameters inside the packed bed through an optimized design, the heat storage apparatus is imparted with a best heat storage performance. The present disclosure further provides a method of manufacturing a heat storage ball.

Abstract: A top-fired reformer box is provided. The top-fired reformer box includes a burner row, a tube row, a reformer tunnel including a closed end, an open end, and a plurality of tunnel ports formed along a side wall of the reformer tunnel, the plurality of tunnel ports including a one or more tunnel port located along the side of the tunnel, and a flow resistor positioned at least one tunnel port applying a flow resistance for flue gas entering the reformer tunnel via the at least one tunnel port such that uniform flow is achieved within the reformer tunnel.

Abstract: An embodiment of a method of integration of a non-volatile memory device into a logic MOS flow is described. Generally, the method includes: forming a pad dielectric layer of a MOS device above a first region of a substrate; forming a channel of the memory device from a thin film of semiconducting material overlying a surface above a second region of the substrate, the channel connecting a source and drain of the memory device; forming a patterned dielectric stack overlying the channel above the second region, the patterned dielectric stack comprising a tunnel layer, a charge-trapping layer, and a sacrificial top layer; simultaneously removing the sacrificial top layer from the second region of the substrate, and the pad dielectric layer from the first region of the substrate; and simultaneously forming a gate dielectric layer above the first region of the substrate and a blocking dielectric layer above the charge-trapping layer.

Abstract: A top-fired reformer box is provided. The top-fired reformer box includes a burner row, a tube row, a reformer tunnel including a closed end, an open end, and a plurality of tunnel ports formed along a side wall of the reformer tunnel, the plurality of tunnel ports including a one or more tunnel port located along the side of the tunnel, and a flow resistor positioned at least one tunnel port applying a flow resistance for flue gas entering the reformer tunnel via the at least one tunnel port such that uniform flow is achieved within the reformer tunnel.