Abstract: A top-fired reformer box is provided. The top-fired reformer box includes a burner row, a tube row, a reformer tunnel including a closed end, an open end, and a plurality of tunnel ports formed along a side wall of the reformer tunnel, the plurality of tunnel ports including a one or more tunnel port located along the side of the tunnel, and a flow resistor positioned at least one tunnel port applying a flow resistance for flue gas entering the reformer tunnel via the at least one tunnel port such that uniform flow is achieved within the reformer tunnel.

Abstract: A method for changing faces for a facial image can include: acquiring three-dimensional facial posture information and three-dimensional facial key points of a target image and a designated image by three-dimensional face reconstruction based on the target image and the designated image; morphing the designated image into an image with the same facial posture information as the target image, the image being used as a reference image; controlling the three-dimensional facial key points, and acquiring two images matched in the three-dimensional facial key points by face-morphing the target image and the reference image; and acquiring a face-changed image by updating a facial texture of the face-morphed target image based on a facial texture of the face-morphed reference image.

Abstract: A display device includes a cover plate, a display screen and a photoreceptor, the cover plate is disposed on the display screen, and the cover plate is provided with a light shielding layer. The light shielding layer is provided with a light transmitting area, and the photoreceptor is disposed corresponding to the light transmitting area. The display device of the present application can improve the photographic properties and the accuracy of the photoreceptor, and make it easier to assemble, and reduce assembly steps.

Abstract: The present invention relates to reactor tubes packed with a catalyst system employed to deliberately bias process gas flow toward the hot tube segment and away from the cold segment in order to reduce the circumferential tube temperature variation.

Abstract: An embodiment of a method of integration of a non-volatile memory device into a logic MOS flow is described. Generally, the method includes: forming a pad dielectric layer of a MOS device above a first region of a substrate; forming a channel of the memory device from a thin film of semiconducting material overlying a surface above a second region of the substrate, the channel connecting a source and drain of the memory device; forming a patterned dielectric stack overlying the channel above the second region, the patterned dielectric stack comprising a tunnel layer, a charge-trapping layer, and a sacrificial top layer; simultaneously removing the sacrificial top layer from the second region of the substrate, and the pad dielectric layer from the first region of the substrate; and simultaneously forming a gate dielectric layer above the first region of the substrate and a blocking dielectric layer above the charge-trapping layer.

Abstract: The present invention relates to reactor tubes packed with a catalyst system employed to deliberately bias process gas flow toward the hot tube segment and away from the cold segment in order to reduce the circumferential tube temperature variation.

Abstract: A watchcase cover has a top wall configured to reveal a watch face at a top side of a watchcase and the top wall comprising a top surface comprising decorative elements. Side walls of the case align with side walls of the watchcase and the side walls include: at least one cutout revealing a watch control positioned at the watchcase, and at least two strap apertures configured to receive a watch strap connected to the watchcase. The top wall and the side walls together define a major opening configured to receive the watchcase. The decorative elements may comprise cubic zirconia. A gasket is positioned at a junction of an interior surface of the top wall and interior surfaces of the side walls.

Abstract: A method for operating a memory device includes the steps of providing a first voltage to a first transistor of a first memory cell and a third transistor of a second memory cell, providing a second voltage to a gate of a second transistor of the first memory cell and a gate of a fourth transistor of the second memory cell, and providing a third voltage to a gate of the first transistor of the first memory cell and a gate of the third transistor of the second memory cell. Other embodiments are also described.

Abstract: The present disclosure discloses a two-layered varied ball diameter packed bed heat storage apparatus and a method of manufacturing a heat storage ball. By arranging large-diameter heat storage balls at an upper layer of a packed bed heat storage apparatus and small-diameter heat storage balls at a lower layer thereof; the packed bed heat storage structure comprehensively considers two important evaluation indicators for a heat storage apparatus: heat storage rate and heat storage density, thereby implementing a design principle of maximizing the heat storage rate density of the packed bed heat storage apparatus; by achieving a best combination of heat storage ball diameters inside the packed bed through an optimized design, the heat storage apparatus is imparted with a best heat storage performance. The present disclosure further provides a method of manufacturing a heat storage ball.

Abstract: A display device includes a cover plate, a display screen and a photoreceptor, the cover plate is disposed on the display screen, and the cover plate is provided with a light shielding layer. The light shielding layer is provided with a light transmitting area, and the photoreceptor is disposed corresponding to the light transmitting area. The display device of the present application can improve the photographic properties and the accuracy of the photoreceptor, and make it easier to assemble, and reduce assembly steps.

Abstract: The present invention relates to reactor tubes packed with a catalyst system employed to deliberately bias process gas flow toward the hot tube segment and away from the cold segment in order to reduce the circumferential tube temperature variation.

Abstract: A method for operating a memory device includes the steps of providing a first voltage to a first transistor of a first memory cell and a third transistor of a second memory cell, providing a second voltage to a gate of a second transistor of the first memory cell and a gate of a fourth transistor of the second memory cell, and providing a third voltage to a gate of the first transistor of the first memory cell and a gate of the third transistor of the second memory cell. Other embodiments are also described.

Abstract: The present invention provides a method for tackling the repelling of hammering during pipe pile driving. The technical scheme of the present invention includes: when repelling of hammering occurs in the process of piling through a sand layer, drill holes downwardly around and/or inside the pipe pile, and jet high-pressure water to the sand layer below to cut and disturb the sand layer.

Abstract: Steam-hydrocarbon reforming reactor with a reformer tube containing ceramic-supported catalyst pellets and metal foam particles. The ceramic-supported catalyst pellets have a porous support comprising one or more of alumina, calcium aluminate, and magnesium aluminate. The metal foam particles comprise Fe and/or Ni. The ceramic-supported catalyst pellets and metal foam particles may be layered or interspersed.

Abstract: A method for operating a memory device includes the steps of providing a first voltage to a first transistor of a first memory cell and a third transistor of a second memory cell, providing a second voltage to a gate of a second transistor of the first memory cell and a gate of a fourth transistor of the second memory cell, and providing a third voltage to a gate of the first transistor of the first memory cell and a gate of the third transistor of the second memory cell. Other embodiments are also described.