Abstract: A battery pack for an electrical device including a housing having a first housing portion defining a first compartment and a second housing portion defining a second compartment, a plurality of battery cells disposed within the first compartment and configured to supply power to the electrical device, a circuit board disposed within the first compartment and including a heat generating component, and a heat sink coupled to the second housing portion and disposed adjacent the heat generating component. The heat sink includes a first portion extending toward the heat generating component and disposed within the first compartment, and a second portion extending away from the heat generating component and disposed within the second compartment.

Abstract: A time-interleaved analog-to-digital converter includes sampling circuits, amplifier circuits, analog-to-digital converter circuits, and a detector circuitry. The sampling circuits are configured to an input signal according to first clock signals, to generate first signals. The amplifier circuits are configured to generate second signals according to the first signals. The analog-to-digital converter circuits are configured to convert the second signals to generate a digital signals. The detector circuitry is configured to adjust a delay time of each of the first clock signals, and calibrate gains of the amplifier circuits according to the digital signals.

Abstract: A method for fabricating high electron mobility transistor (HEMT) includes the steps of: forming a buffer layer on a substrate; forming a barrier layer on the buffer layer; forming a hard mask on the barrier layer; performing an implantation process through the hard mask to form a doped region in the barrier layer and the buffer layer; removing the hard mask and the barrier layer to form a first trench; forming a gate dielectric layer on the hard mask and into the first trench; forming a gate electrode on the gate dielectric layer; and forming a source electrode and a drain electrode adjacent to two sides of the gate electrode.

Abstract: An in-memory computing method and an in-memory computing apparatus are adapted to perform multiply-accumulate (MAC) operations on a memory by a processor. In the method, a pre-processing operation is respectively performed on input data and weight data to be written into input lines and memory cells of the memory to divide the input data and weight data into a primary portion and a secondary portion. The input data and the weight data divided into the primary portion and the secondary portion are written into the input lines and the memory cells in batches to perform the MAC operations and obtain a plurality of computation results. According to a numeric value of each of the computation results, the computation results are filtered. According to the portions to which the computation results correspond, a post-processing operation is performed on the filtered computation results to obtain output data.

Abstract: A semiconductor device includes a substrate and a transistor. The transistor includes a first channel region overlying the substrate and a source/drain region in contact with the first channel region. The source/drain region has a first surface opposite the substrate and side surfaces extending from the first surface. A silicide layer is disposed on the first surface and the side surfaces of the source/drain region.

Abstract: A method for fabricating high electron mobility transistor (HEMT) includes the steps of: forming a buffer layer on a substrate; forming a barrier layer on the buffer layer; forming a hard mask on the barrier layer; performing an implantation process through the hard mask to form a doped region in the barrier layer and the buffer layer; removing the hard mask and the barrier layer to form a first trench; forming a gate dielectric layer on the hard mask and into the first trench; forming a gate electrode on the gate dielectric layer; and forming a source electrode and a drain electrode adjacent to two sides of the gate electrode.

Abstract: An automatic-tuning method and an automatic-tuning system are provided. The automatic-tuning method includes: obtaining a first data rate and a first signal quality index of an object located at a coordinate point; controlling an attenuator to change a total path loss according to the first data rate and the first signal quality index to obtain a second signal quality index and a second data rate; determining whether to update a signal quality reference value and a coordinate reference value according to the second signal quality index and the second data rate, if so, the signal quality reference value and the coordinate reference value are updated with the second signal quality index and the coordinate point; and confirming whether the signal quality reference value is less than or equal to a preset signal quality threshold to determine whether to output the signal quality reference value and the coordinate reference value.

Abstract: A memory device and an operation method thereof are provided. The memory device includes: a memory array including a plurality of memory cells for storing a plurality of weights; a multiplication circuit for performing bitwise multiplication on a plurality of input data and the weights to generate a plurality of multiplication results, wherein in performing bitwise multiplication, the memory cells generate a plurality of memory cell currents; a digital accumulating circuit for performing a digital accumulating on the multiplication results; an analog accumulating circuit for performing an analog accumulating on the memory cell currents to generate a first MAC operation result; and a decision unit for deciding whether to perform the analog accumulating, the digital accumulating or a hybrid accumulating, wherein in performing the hybrid accumulating, whether the digital accumulating circuit is triggered is based on the first MAC operation result.

Abstract: An enhancement mode high electron mobility transistor (HEMT) includes a group III-V semiconductor body, a group III-V barrier layer and a gate structure. The group III-V barrier layer is disposed on the group III-V semiconductor body, and the gate structure is a stacked structure disposed on the group III-V barrier layer. The gate structure includes a gate dielectric and a group III-V gate layer disposed on the gate dielectric, and the thickness of the gate dielectric is between 15 nm to 25 nm.

Abstract: An electronic device includes a processor circuit, a frequency-domain-to-time-domain conversion circuit, a transmitter circuit, a hybrid circuit, a receiver circuit, and a time-domain-to-frequency-domain conversion circuit. The processor circuit generates a frequency-domain transmitting signal. The frequency-domain-to-time-domain conversion circuit converts the frequency-domain transmitting signal into a first time-domain transmitting signal. The transmitter circuit generates a second time-domain transmitting signal. The hybrid circuit includes an echo noise cancelling path and an echo noise path. When the echo noise cancelling path is turned off, the processor circuit receives a first frequency-domain receiving signal. When the echo noise cancelling path is turned on, the processor circuit receives a second frequency-domain receiving signal.

Abstract: A storage device and a data accessing method are disclosed, wherein the storage device includes a memory circuit and a control circuit. The memory circuit includes a plurality of multi-level cells, and each of the multi-level cells is configured to store at least a first bit, a second bit and a third bit in at least a first page, a second page and a third page. The control circuit is configured to read the first bits according to a one-time reading operation related to the first bits, read the second bits according to M-times reading operations related to the second bits, and read the third bits according to N-times reading operations related to the third bits, wherein the difference between M and N is less than or equal to one.

Abstract: A method for forming a semiconductor structure is provided. The method includes forming first, second and third fin structures over a substrate, forming a first dielectric material along a first trench between the first fin structure and the second fin structure and along a second trench between the second fin structure and the third fin structure, removing a first portion of the first dielectric material along the second trench while leaving a second portion of the first dielectric material along the first trench as a dielectric liner, depositing a second dielectric material over the dielectric liner and filling the first trench and the second trench, and etching back the second dielectric material until the dielectric liner is exposed. A first portion of the second dielectric material remaining in the first trench forms a dielectric wall.

Abstract: A semiconductor memory device includes a first dielectric wall, a second dielectric wall, first channel portions, second channel portions, an isolation wall, and a dielectric feature. The second dielectric wall is spaced apart from the first dielectric wall in a first direction. The first channel portions are disposed on a side of the first dielectric wall and are spaced apart from each other in a second direction transverse to the first direction. The second channel portions are disposed on a side of the second dielectric wall and are spaced apart from each other in the second direction. The isolation wall is located between the first dielectric wall and the second dielectric wall. The dielectric feature is disposed to separate the first dielectric wall and the isolation wall, and is disposed on the other side of the first dielectric wall opposite to the first channel portions in the first direction.

Abstract: The present invention relates to a liquid-state temporary reinforcing material, a preparation method therefor and an application thereof. The liquid-state temporary reinforcing material comprises a reinforcing material and a crystallization inhibitor; the reinforcing material is selected from molecules of any two or more of menthol, menthone, menthol ester and menthol ether, and the content of the crystallization inhibitor is less than 50 ppm. For the liquid-state temporary reinforcing material of the present invention, the menthol and the derivatives of the liquid-state temporary reinforcing material are integrally mixed together to form the composite material for temporary reinforcing, the composite material being liquid and volatilization-controllable at room temperature. Thus, the temporary reinforcing requirements for extracting cultural relics at an archaeology excavation site may be met, and the material is convenient to use.

Abstract: A method for fabricating high electron mobility transistor (HEMT) includes the steps of: forming a buffer layer on a substrate; forming a barrier layer on the buffer layer; forming a hard mask on the barrier layer; performing an implantation process through the hard mask to form a doped region in the barrier layer and the buffer layer; removing the hard mask and the barrier layer to form a first trench; forming a gate dielectric layer on the hard mask and into the first trench; forming a gate electrode on the gate dielectric layer; and forming a source electrode and a drain electrode adjacent to two sides of the gate electrode.