Abstract: Methods and apparatus for removing oxide from a surface, the surface comprising at least one of silicon and germanium, are provided. The method and apparatus are particularly suitable for removing native oxide from a metal silicide layer of a contact structure. The method and apparatus advantageously integrate both the etch stop layer etching process and the native oxide removal process in a single chamber, thereby eliminating native oxide growth or other contaminates redeposit during the substrate transfer processes. Furthermore, the method and the apparatus also provides the improved three-step chemical reaction process to efficiently remove native oxide from the metal silicide layer without adversely altering the geometry of the contact structure and the critical dimension of the trenches or vias formed in the contact structure.

Abstract: Native oxides and residue are removed from surfaces of a substrate by performing a hydrogen remote plasma process on the substrate. In one embodiment, the method for removing native oxides from a substrate includes transferring a substrate containing native oxide disposed on a material layer into a processing chamber, wherein the material layer includes a Ge containing layer or a III-V compound containing layer, supplying a gas mixture including a hydrogen containing gas from a remote plasma source into the processing chamber, and activating the native oxide by the hydrogen containing gas to remove the oxide layer from the substrate.

Abstract: Native oxides and associated residue are removed from surfaces of a substrate by sequentially performing two plasma cleaning processes on the substrate in a single processing chamber. The first plasma cleaning process removes native oxide formed on a substrate surface by generating a cleaning plasma from a mixture of ammonia (NH3) and nitrogen trifluoride (NF3) gases, condensing products of the cleaning plasma on the native oxide to form a thin film that contains ammonium hexafluorosilicate ((NH4)2SiF6), and subliming the thin film off of the substrate surface. The second plasma cleaning process removes remaining residues of the thin film by generating a second cleaning plasma from nitrogen trifluoride gas. Products of the second cleaning plasma react with a few angstroms of the bare silicon present on the surface, forming silicon tetrafluoride (SiF4) and lifting off residues of the thin film.

Abstract: A compressor impeller includes a hub, main blades and splitter blades. The main blades are equally spaced around the circumference of the hub. Each splitter blade is equally spaced between two adjacent main blades. Each main blade and splitter blade has suction and pressure surfaces formed in substantial compliance with normalized Cartesian coordinate values of X, Y, and Z set forth in Tables 1-4. When connected by smooth, continuing arcs, the normalized Cartesian coordinates form complete main blade and splitter blade shapes that are substantially matched by the main blade and splitter blade shapes of the compressor impeller.

Abstract: Information about different road networks is retrieved from different sources. Applicable rules and parameter values for constructing an integrated road network are determined for each road network. Roads are first extended at their endpoints. Intersection points among the extended roads are detected. Roads are then divided into road segments at the detected intersection points, and shorted by removing road segments extended beyond intersection points. To process a large scale of road information, extended roads are divided into road segments and distributed to reducers based on their geographic locations for the reducers to detect intersection points among the received road segments. The resulting road segments are then distributed to reducers based on the roads they belong to for the reducers to first reassemble the road segments, then divide the reassembled roads at the detected intersection points, and finally remove road segments extended beyond intersection points.

Abstract: Business information about business entities are received from a plurality of aggregate information sources such as business directories. An authority page of a business entity is retrieved and information is extracted from the authority page. The extracted information is compared with business information about the business entity from the aggregate information sources. Accuracy scores are generated for the combination of the business entity and the aggregate information sources based on the comparison results. A collection of accurate business information for the business entity is generated by including business information from aggregate information sources with high accuracy scores.

Abstract: Methods for depositing a contact metal layer in contact structures of a semiconductor device are provided. In one embodiment, a method for depositing a contact metal layer for forming a contact structure in a semiconductor device is provided. The method comprises performing a cyclic metal deposition process to deposit a contact metal layer on a substrate and annealing the contact metal layer disposed on the substrate. The cyclic metal deposition process comprises exposing the substrate to a deposition precursor gas mixture to deposit a portion of the contact metal layer on the substrate, exposing the portion of the contact metal layer to a plasma treatment process, and repeating the exposing the substrate to a deposition precursor gas mixture and exposing the portion of the contact metal layer to a plasma treatment process until a predetermined thickness of the contact metal layer is achieved.

Abstract: Methods and substrate processing systems for analyzing an end point of a process are provided. By-products of the process are detected and monitored to determine the completion of various types of reaction processes within a substrate processing chamber. The methods provide real time process monitoring, thereby reducing the need to rigidly constrain other substrate processing parameters, increasing chamber cleaning efficiency, and/or increasing substrate processing throughput.

Abstract: Native oxides and associated residue are removed from surfaces of a substrate by sequentially performing two plasma cleaning processes on the substrate in a single processing chamber. The first plasma cleaning process removes native oxide formed on a substrate surface by generating a cleaning plasma from a mixture of ammonia (NH3) and nitrogen trifluoride (NF3) gases, condensing products of the cleaning plasma on the native oxide to form a thin film that contains ammonium hexafluorosilicate ((NH4)2SiF6), and subliming the thin film off of the substrate surface. The second plasma cleaning process removes remaining residues of the thin film by generating a second cleaning plasma from nitrogen trifluoride gas. Products of the second cleaning plasma react with a few angstroms of the bare silicon present on the surface, forming silicon tetrafluoride (SiF4) and lifting off residues of the thin film.

Abstract: The present invention provides microfabricated substrates and methods of conducting reactions within these substrates. The reactions occur in plugs transported in the flow of a carrier-fluid.

Abstract: Short POI titles are generated by removing unnecessary administrative area prefixes from existing POI titles and replacing necessary administrative area prefixes with shorter aliases. Administrative area prefixes are identified and analyzed to determine whether they are necessary. The analysis includes determining (1) whether the remainders with the prefixes excluded include a common suffix as a prefix, and (2) whether the remainders are unique in an applicable metropolis area. If a remainder does not include as a prefix a common suffix and is unique in the applicable metropolis area, the corresponding prefix is determined unnecessary and removed from the existing POI title to generate a short POI title. Otherwise, the corresponding prefix is determined necessary and replaced with a shorter alias to generate a short POI title.

Abstract: Embodiments of the invention provide apparatuses and methods for atomic layer deposition (ALD), such as plasma-enhanced ALD (PE-ALD). In some embodiments, a PE-ALD chamber is provided which includes a chamber lid assembly coupled with a chamber body having a substrate support therein. In one embodiment, the chamber lid assembly has an inlet manifold assembly containing an annular channel encompassing a centralized channel, wherein the centralized channel extends through the inlet manifold assembly, and the inlet manifold assembly further contains injection holes extending from the annular channel, through a sidewall of the centralized channel, and to the centralized channel.

Abstract: A registration processing apparatus generates a polynomial to calculate a value corresponding to a distance from the surface of a target object in a first image, and acquires a plurality of position coordinates on the surface of the target object in a second image. Then the apparatus respectively calculates a value corresponding to the distance from the surface of the target object in the first image using the polynomial, for position coordinates obtained by coordinate conversion of the plurality of position coordinates. The apparatus coordinate-converts the position coordinates of the second image by a coordinate conversion method for the plurality of position coordinates determined based on the calculated values.

Abstract: The present invention provides microfabricated substrates and methods of conducting reactions within these substrates. The reactions occur in plugs transported in the flow of a carrier-fluid.

Abstract: The present invention provides microfabricated substrates and methods of conducting reactions within these substrates. The reactions occur in plugs transported in the flow of a carrier-fluid.

Abstract: A turbine apparatus comprises a rotor with a hub section defined about a rotational axis and a plurality of blades attached to the hub section. The plurality of blades comprises a first group having a first angular spacing in a first circumferential sector of the rotor, and a second group having a second angular spacing in a second circumferential sector of the rotor. The first angular spacing is different from the second angular spacing, and the rotor blades are asymmetric about the rotational axis.

Abstract: The present invention provides microfabricated substrates and methods of conducting reactions within these substrates. The reactions occur in plugs transported in the flow of a carrier-fluid.

Abstract: Methods for precleaning native oxides or other contaminants from a surface of a substrate prior to forming a metal silicide layer on the substrate.

Abstract: Short POI titles are generated by removing unnecessary administrative area prefixes from existing POI titles and replacing necessary administrative area prefixes with shorter aliases. Administrative area prefixes are identified and analyzed to determine whether they are necessary. The analysis includes determining (1) whether the remainders with the prefixes excluded include a common suffix as a prefix, and (2) whether the remainders are unique in an applicable metropolis area. If a remainder does not include as a prefix a common suffix and is unique in the applicable metropolis area, the corresponding prefix is determined unnecessary and removed from the existing POI title to generate a short POI title. Otherwise, the corresponding prefix is determined necessary and replaced with a shorter alias to generate a short POI title.

Abstract: Embodiments of the invention provide apparatuses and methods for atomic layer deposition (ALD), such as plasma-enhanced ALD (PE-ALD). In some embodiments, a PE-ALD chamber is provided which includes a chamber lid assembly coupled with a chamber body having a substrate support therein. In one embodiment, the chamber lid assembly has an inlet manifold assembly containing an annular channel encompassing a centralized channel, wherein the centralized channel extends through the inlet manifold assembly, and the inlet manifold assembly further contains injection holes extending from the annular channel, through a sidewall of the centralized channel, and to the centralized channel.