Abstract: A method and system optimizing source selection of an online order with the lowest fulfillment cost by considering multiple types of parameters, including shipping costs, backlog costs and markdown savings of the order. The method includes obtaining an order from the order retrieval subsystem of the OMS, selecting the candidate sources, and retrieving data from retailers or shipping companies of each selected candidate sources. The system then calculates the costs and savings parameters of the candidate sources from the retrieved data. The system identifies all possible candidate sourcing selections of the order and calculates the total fulfillment cost of each sourcing selection of the order by adding the shipping costs with the backlog costs, and subtracting the markdown savings of all candidate sources in each sourcing selection. The system identifies the optimized sourcing selection of the order with the lowest fulfillment cost and renders the selection to the OMS.

Abstract: A method, system and computer program product for managing an order in an Omni-channel order fulfillment system is disclosed. A stock-keeping unit (SKU) node level cost is predicted for a plurality of SKUs. The order is received containing one or more SKUs. A candidate list of fulfillment nodes is determined for fulfilling each of the one or more SKUs in the order using the predicted SKU node level cost and a fulfillment node-destination shipping distance. One or more fulfillment nodes are selected from the candidate list, and the order is fulfilled using the selected one or more fulfillment nodes.

Abstract: A light-emitting helmet is provided. The helmet includes a main body, a number of fixing members, and a number of light-emitting lamp strips. The main body includes a shell and inner layer. The shell includes an outer surface and a number of grooves defining in the outer surface. The fixing members are secured in the inner layer. The lamp strips are detachably mounted in the grooves by the fixing frames respectively. In addition, a light-emitting helmet manufacturing method is also provided.

Abstract: The present invention provides microfluidic technology enabling rapid and economical manipulation of reactions on the femtoliter to microliter scale.

Abstract: Methods for depositing a metal layer in a feature definition of a semiconductor device are provided. In one implementation, a method for depositing a metal layer for forming a semiconductor device is provided. The method comprises performing a cyclic metal deposition process to deposit a metal layer on a substrate and annealing the metal layer disposed on the substrate. The cyclic metal deposition process comprises exposing the substrate to a deposition precursor gas mixture to deposit a portion of the metal layer on the substrate, exposing the portion of the metal layer to either a plasma treatment process or hydrogen annealing process and repeating the exposing the substrate to a deposition precursor gas mixture and exposing the portion of the metal layer to either a plasma treatment process or hydrogen annealing process until a predetermined thickness of the metal layer is achieved.

Abstract: Methods for depositing a metal layer in a feature definition of a semiconductor device are provided. In one implementation, a method for depositing a metal layer for forming a semiconductor device is provided. The method comprises performing a cyclic metal deposition process to deposit a metal layer on a substrate and annealing the metal layer disposed on the substrate. The cyclic metal deposition process comprises exposing the substrate to a deposition precursor gas mixture to deposit a portion of the metal layer on the substrate, exposing the portion of the metal layer to either a plasma treatment process or hydrogen annealing process and repeating the exposing the substrate to a deposition precursor gas mixture and exposing the portion of the metal layer to either a plasma treatment process or hydrogen annealing process until a predetermined thickness of the metal layer is achieved.

Abstract: A method of crystallization is disclosed, the method comprises the steps of providing a microfluidic system comprising at least three channels having at least one junction; providing within the at least three channels a continuously flowing water-immiscible carrier-fluid, a continuously flowing first aqueous fluid comprising a crystallization target, and a continuously flowing second aqueous fluid comprising a precipitant; forming at least one plug comprising the first and second aqueous fluids by partitioning the aqueous fluids with the flowing carrier-fluid at the junction of the at least three channels, flowing the at least one plug through an outlet port into a tubing, and stopping the flow of the at least one plug in the tubing, wherein the crystallization target forms a crystal in the tubing.

Abstract: The invention discloses a refrigeration device, including: a first compressor unit (101), an indoor heat exchanger (3) and an outdoor heat exchanger (2), sequentially communicated; a first throttle device (401) and a second throttle device (402), sequentially connected in series; and an air supply device (5), provided between the first throttle device (401) and the second throttle device (402). The refrigeration device further includes a second compressor unit (102). An air intake port (B) of the second compressor unit (102) is communicated with an outlet of the outdoor heat exchanger (2). An outlet (E) of the second compressor unit (102) is communicated with the air supply port (C) of the first compressor unit (101) and an air exhaust port (D) of the first compressor unit (101) by means of a three-way valve (10), respectively.

Abstract: Implementations described herein generally relate to methods and apparatus for in-situ removal of unwanted deposition buildup from one or more interior surfaces of a semiconductor substrate processing chamber. In one implementation, a method for removing cobalt or cobalt containing deposits from one or more interior surfaces of a substrate processing chamber after processing a substrate disposed in the substrate processing chamber is provided. The method comprises forming a reactive species from the fluorine containing cleaning gas mixture, permitting the reactive species to react with the cobalt and/or the cobalt containing deposits to form cobalt fluoride in a gaseous state and purging the cobalt fluoride in gaseous state out of the substrate processing chamber.

Abstract: Provided are atomic layer deposition methods to deposit a film using a circular batch processing chamber with a plurality of sections separated by gas curtains so that each section independently has a process condition.

Abstract: Methods for selectively depositing a metal silicide layer are provided herein.

Abstract: A microfluidic system with a plurality of sequential T-junctions for performing reactions in a plurality of droplets (plugs) of micro- to femtoliter volumes is disclosed. The microfluidic system is configured such that the plurality of plugs are flowing through a loading component, with the loading component splitting the plurality of plugs at each of the plurality of downstream T-junctions and each inlet of the plurality of detachable holding components is configured to be operably coupled with at least one of outlets of the plurality of downstream T-junctions so that the holding components received a plurality of split plugs in the immiscible carrier fluid from the loading component.

Abstract: The present invention provides microfabricated substrates and methods of conducting reactions within these substrates. The reactions occur in plugs transported in the flow of a carrier-fluid.

Abstract: Methods for depositing a contact metal layer in contact structures of a semiconductor device are provided. In one embodiment, a method for depositing a contact metal layer for forming a contact structure in a semiconductor device is provided. The method comprises performing a cyclic metal deposition process to deposit a contact metal layer on a substrate and annealing the contact metal layer disposed on the substrate. The cyclic metal deposition process comprises exposing the substrate to a deposition precursor gas mixture to deposit a portion of the contact metal layer on the substrate, exposing the portion of the contact metal layer to a plasma treatment process, and repeating the exposing the substrate to a deposition precursor gas mixture and exposing the portion of the contact metal layer to a plasma treatment process until a predetermined thickness of the contact metal layer is achieved.

Abstract: The present invention provides microfabricated substrates and methods of conducting reactions within these substrates. The reactions occur in plugs transported in the flow of a carrier-fluid.

Abstract: The present invention provides microfluidic technology enabling rapid and economical manipulation of reactions on the femtoliter to microliter scale.

Abstract: Information about different road networks is retrieved from different sources. Applicable rules and parameter values for constructing an integrated road network are determined for each road network. Roads are first extended at their endpoints. Intersection points among the extended roads are detected. Roads are then divided into road segments at the detected intersection points, and shorted by removing road segments extended beyond intersection points. To process a large scale of road information, extended roads are divided into road segments and distributed to reducers based on their geographic locations for the reducers to detect intersection points among the received road segments. The resulting road segments are then distributed to reducers based on the roads they belong to for the reducers to first reassemble the road segments, then divide the reassembled roads at the detected intersection points, and finally remove road segments extended beyond intersection points.

Abstract: Methods for depositing a contact metal layer in contact structures of a semiconductor device are provided. In one embodiment, a method for depositing a contact metal layer for forming a contact structure in a semiconductor device is provided. The method comprises performing a cyclic metal deposition process to deposit a contact metal layer on a substrate and annealing the contact metal layer disposed on the substrate. The cyclic metal deposition process comprises exposing the substrate to a deposition precursor gas mixture to deposit a portion of the contact metal layer on the substrate, exposing the portion of the contact metal layer to a plasma treatment process, and repeating the exposing the substrate to a deposition precursor gas mixture and exposing the portion of the contact metal layer to a plasma treatment process until a predetermined thickness of the contact metal layer is achieved.

Abstract: The present invention provides microfabricated substrates and methods of conducting reactions within these substrates. The reactions occur in plugs transported in the flow of a carrier-fluid.

Abstract: There is provided an image processing apparatus which calculates a feature value of an image. The apparatus comprises first obtaining means for obtaining an image; calculation means for calculating a set of numerical values formed from degrees of contributions of each of a plurality of order, wherein the degree of contributions of each order indicate contributions of monomials of the order for intensity values which are calculated using an approximation polynomial, and wherein the approximation polynomial provides a relationship between a pixel position of the image and an intensity value at the pixel position and is formed from a plurality of the monomials each having an order out of the plurality of orders; and first output means for outputting the set of the calculated numerical values as the feature value of the image.