Patents by Inventor Bor-Zen Tien
Bor-Zen Tien has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20230307522Abstract: A method of manufacturing a semiconductor device, a plurality of fin structures are formed over a semiconductor substrate. The fin structures extend along a first direction and are arranged in a second direction crossing the first direction. A plurality of sacrificial gate structures extending in the second direction are formed over the fin structures. An interlayer dielectric layer is formed over the plurality of fin structures between adjacent sacrificial gate structures. The sacrificial gate structures are cut into a plurality of pieces of sacrificial gate structures by forming gate end spaces along the second direction. Gate separation plugs are formed by filling the gate end spaces with two or more dielectric materials. The two or more dielectric materials includes a first layer and a second layer formed on the first layer, and a dielectric constant of the second layer is smaller than a dielectric constant of the first layer.Type: ApplicationFiled: April 3, 2023Publication date: September 28, 2023Inventors: Cheng-Yi PENG, Wen-Yuan CHEN, Wen-Hsing HSIEH, Yi-Ju HSU, Jon-Hsu HO, Song-Bor LEE, Bor-Zen TIEN
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Patent number: 11621343Abstract: A method of manufacturing a semiconductor device, a plurality of fin structures are formed over a semiconductor substrate. The fin structures extend along a first direction and are arranged in a second direction crossing the first direction. A plurality of sacrificial gate structures extending in the second direction are formed over the fin structures. An interlayer dielectric layer is formed over the plurality of fin structures between adjacent sacrificial gate structures. The sacrificial gate structures are cut into a plurality of pieces of sacrificial gate structures by forming gate end spaces along the second direction. Gate separation plugs are formed by filling the gate end spaces with two or more dielectric materials. The two or more dielectric materials includes a first layer and a second layer formed on the first layer, and a dielectric constant of the second layer is smaller than a dielectric constant of the first layer.Type: GrantFiled: July 19, 2021Date of Patent: April 4, 2023Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Cheng-Yi Peng, Wen-Yuan Chen, Wen-Hsing Hsieh, Yi-Ju Hsu, Jon-Hsu Ho, Song-Bor Lee, Bor-Zen Tien
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Publication number: 20210359085Abstract: A semiconductor device, includes a channel region, and a source/drain region adjacent to the channel region. The source/drain region includes a first epitaxial layer, a second epitaxial layer epitaxially formed on the first epitaxial layer and a third epitaxial layer epitaxially formed on the second epitaxial layer, and the first epitaxial layer is made of SiAs.Type: ApplicationFiled: July 26, 2021Publication date: November 18, 2021Inventors: Cheng-Yi PENG, Ting TSAI, Chung-Wei HUNG, Jung-Ting CHEN, Ying-Hua LAI, Song-Bor LEE, Bor-Zen TIEN
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Publication number: 20210351282Abstract: A method of manufacturing a semiconductor device, a plurality of fin structures are formed over a semiconductor substrate. The fin structures extend along a first direction and are arranged in a second direction crossing the first direction. A plurality of sacrificial gate structures extending in the second direction are formed over the fin structures. An interlayer dielectric layer is formed over the plurality of fin structures between adjacent sacrificial gate structures. The sacrificial gate structures are cut into a plurality of pieces of sacrificial gate structures by forming gate end spaces along the second direction. Gate separation plugs are formed by filling the gate end spaces with two or more dielectric materials. The two or more dielectric materials includes a first layer and a second layer formed on the first layer, and a dielectric constant of the second layer is smaller than a dielectric constant of the first layer.Type: ApplicationFiled: July 19, 2021Publication date: November 11, 2021Inventors: Cheng-Yi PENG, Wen-Yuan CHEN, Wen-Hsing HSIEH, Yi-Ju HSU, Jon-Hsu HO, Song-Bor LEE, Bor-Zen TIEN
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Patent number: 11101360Abstract: A semiconductor device includes a channel region, a source/drain region adjacent to the channel region, and a source/drain epitaxial layer. The source/drain epitaxial layer includes a first epitaxial layer epitaxially formed on the source/drain region, a second epitaxial layer epitaxially formed on the first epitaxial layer and a third epitaxial layer epitaxially formed on the second epitaxial layer. The first epitaxial layer includes at least one selected from the group consisting of a SiAs layer, a SiC layer and a SiCP layer.Type: GrantFiled: October 1, 2019Date of Patent: August 24, 2021Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Cheng-Yi Peng, Wen-Hsing Hsieh, Wen-Yuan Chen, Jon-Hsu Ho, Song-Bor Lee, Bor-Zen Tien
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Patent number: 11075269Abstract: A semiconductor device, includes a channel region, and a source/drain region adjacent to the channel region. The source/drain region includes a first epitaxial layer, a second epitaxial layer epitaxially formed on the first epitaxial layer and a third epitaxial layer epitaxially formed on the second epitaxial layer, and the first epitaxial layer is made of SiAs.Type: GrantFiled: October 8, 2019Date of Patent: July 27, 2021Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Cheng-Yi Peng, Ting Tsai, Chung-Wei Hung, Jung-Ting Chen, Ying-Hua Lai, Song-Bor Lee, Bor-Zen Tien
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Patent number: 11069791Abstract: A method of manufacturing a semiconductor device, a plurality of fin structures are formed over a semiconductor substrate. The fin structures extend along a first direction and are arranged in a second direction crossing the first direction. A plurality of sacrificial gate structures extending in the second direction are formed over the fin structures. An interlayer dielectric layer is formed over the plurality of fin structures between adjacent sacrificial gate structures. The sacrificial gate structures are cut into a plurality of pieces of sacrificial gate structures by forming gate end spaces along the second direction. Gate separation plugs are formed by filling the gate end spaces with two or more dielectric materials. The two or more dielectric materials includes a first layer and a second layer formed on the first layer, and a dielectric constant of the second layer is smaller than a dielectric constant of the first layer.Type: GrantFiled: October 15, 2019Date of Patent: July 20, 2021Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Cheng-Yi Peng, Wen-Yuan Chen, Wen-Hsing Hsieh, Yi-Ju Hsu, Jon-Hsu Ho, Song-Bor Lee, Bor-Zen Tien
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Patent number: 11011419Abstract: An apparatus includes a plurality of interconnect structures over a substrate, a dielectric layer formed over a top metal line of the plurality of interconnect structures, a first barrier layer on a bottom and sidewalls of an opening in the dielectric layer, wherein the first barrier layer is formed of a first material and has a first thickness, a second barrier layer over the first barrier layer, wherein the second barrier layer is formed of a second material different from the first material and has a second thickness and a pad over the second barrier layer, wherein the pad is formed of a third material.Type: GrantFiled: March 26, 2020Date of Patent: May 18, 2021Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Bor-Zen Tien, Jhu-Ming Song, Hsuan-Han Lin, Kuang-Hsin Chen, Mu-Yi Lin, Tzong-Sheng Chang
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Patent number: 10957653Abstract: Among other things, one or more semiconductor arrangements, and techniques for forming such semiconductor arrangements are provided. A layer, such as a poly layer or an inter layer dielectric (ILD) layer, is formed over a substrate. A photoresist mask is formed over the layer. The photoresist mask comprises an open region overlaying a target region of the layer and comprises a protection region overlaying a second region of the layer. An etching process is performed through the open region to reduce a height of the layer in the target region in relation to a height of the layer in the second region because the protection region inhibits the etching process from affecting the layer in the second region. A first structure, having a first height, is formed within the target region. A second structure, having a second height greater than the first height, is formed within the second region.Type: GrantFiled: October 11, 2019Date of Patent: March 23, 2021Assignee: Taiwan Semiconductor Manufacturing Company LimitedInventors: Tsung-Yu Chiang, Chen Kuang-Hsin, Bor-Zen Tien, Tzong-Sheng Chang
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Patent number: 10777480Abstract: Some embodiments relate to a semiconductor device. The semiconductor device includes a layer disposed over a substrate. A conductive body extends through the layer. A plurality of bar or pillar structures are spaced apart from one another and laterally surround the conductive body. The plurality of bar or pillar structures are generally concentric around the conductive body.Type: GrantFiled: December 6, 2019Date of Patent: September 15, 2020Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Ying-Chieh Liao, Han-Wei Yang, Chen-Chung Lai, Kang-Min Kuo, Bor-Zen Tien
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Publication number: 20200227316Abstract: An apparatus includes a plurality of interconnect structures over a substrate, a dielectric layer formed over a top metal line of the plurality of interconnect structures, a first barrier layer on a bottom and sidewalls of an opening in the dielectric layer, wherein the first barrier layer is formed of a first material and has a first thickness, a second barrier layer over the first barrier layer, wherein the second barrier layer is formed of a second material different from the first material and has a second thickness and a pad over the second barrier layer, wherein the pad is formed of a third material.Type: ApplicationFiled: March 26, 2020Publication date: July 16, 2020Inventors: Bor-Zen Tien, Jhu-Ming Song, Hsuan-Han Lin, Kuang-Hsin Chen, Mu-Yi Lin, Tzong-Sheng Chang
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Publication number: 20200176566Abstract: A semiconductor device, includes a channel region, and a source/drain region adjacent to the channel region. The source/drain region includes a first epitaxial layer, a second epitaxial layer epitaxially formed on the first epitaxial layer and a third epitaxial layer epitaxially formed on the second epitaxial layer, and the first epitaxial layer is made of SiAs.Type: ApplicationFiled: October 8, 2019Publication date: June 4, 2020Inventors: Cheng-Yi PENG, Ting TSAI, Chung-Wei HUNG, Jung-Ting CHEN, Ying-Hua LAI, Song-Bor LEE, Bor-Zen TIEN
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Publication number: 20200168716Abstract: A semiconductor device includes a channel region, a source/drain region adjacent to the channel region, and a source/drain epitaxial layer. The source/drain epitaxial layer includes a first epitaxial layer epitaxially formed on the source/drain region, a second epitaxial layer epitaxially formed on the first epitaxial layer and a third epitaxial layer epitaxially formed on the second epitaxial layer. The first epitaxial layer includes at least one selected from the group consisting of a SiAs layer, a SiC layer and a SiCP layer.Type: ApplicationFiled: October 1, 2019Publication date: May 28, 2020Inventors: Cheng-Yi PENG, Wen-Hsing HSIEH, Wen-Yuan CHEN, Jon-Hsu HO, Song-Bor LEE, Bor-Zen TIEN
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Publication number: 20200135891Abstract: A method of manufacturing a semiconductor device, a plurality of fin structures are formed over a semiconductor substrate. The fin structures extend along a first direction and are arranged in a second direction crossing the first direction. A plurality of sacrificial gate structures extending in the second direction are formed over the fin structures. An interlayer dielectric layer is formed over the plurality of fin structures between adjacent sacrificial gate structures. The sacrificial gate structures are cut into a plurality of pieces of sacrificial gate structures by forming gate end spaces along the second direction. Gate separation plugs are formed by filling the gate end spaces with two or more dielectric materials. The two or more dielectric materials includes a first layer and a second layer formed on the first layer, and a dielectric constant of the second layer is smaller than a dielectric constant of the first layer.Type: ApplicationFiled: October 15, 2019Publication date: April 30, 2020Inventors: Cheng-Yi PENG, Wen-Yuan CHEN, Wen-Hsing HSIEH, Yi-Ju HSU, Jon-Hsu HO, Song-Bor LEE, Bor-Zen TIEN
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Patent number: 10629481Abstract: An apparatus includes a plurality of interconnect structures over a substrate, a dielectric layer formed over a top metal line of the plurality of interconnect structures, a first barrier layer on a bottom and sidewalls of an opening in the dielectric layer, wherein the first barrier layer is formed of a first material and has a first thickness, a second barrier layer over the first barrier layer, wherein the second barrier layer is formed of a second material different from the first material and has a second thickness and a pad over the second barrier layer, wherein the pad is formed of a third material.Type: GrantFiled: July 24, 2017Date of Patent: April 21, 2020Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Bor-Zen Tien, Jhu-Ming Song, Hsuan-Han Lin, Kuang-Hsin Chen, Mu-Yi Lin, Tzong-Sheng Chang
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Publication number: 20200111719Abstract: Some embodiments relate to a semiconductor device. The semiconductor device includes a layer disposed over a substrate. A conductive body extends through the layer. A plurality of bar or pillar structures are spaced apart from one another and laterally surround the conductive body. The plurality of bar or pillar structures are generally concentric around the conductive body.Type: ApplicationFiled: December 6, 2019Publication date: April 9, 2020Inventors: Ying-Chieh Liao, Han-Wei Yang, Chen-Chung Lai, Kang-Min Kuo, Bor-Zen Tien
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Publication number: 20200043859Abstract: Among other things, one or more semiconductor arrangements, and techniques for forming such semiconductor arrangements are provided. A layer, such as a poly layer or an inter layer dielectric (ILD) layer, is formed over a substrate. A photoresist mask is formed over the layer. The photoresist mask comprises an open region overlaying a target region of the layer and comprises a protection region overlaying a second region of the layer. An etching process is performed through the open region to reduce a height of the layer in the target region in relation to a height of the layer in the second region because the protection region inhibits the etching process from affecting the layer in the second region. A first structure, having a first height, is formed within the target region. A second structure, having a second height greater than the first height, is formed within the second region.Type: ApplicationFiled: October 11, 2019Publication date: February 6, 2020Inventors: Tsung-Yu CHIANG, Chen KUANG-HSIN, Bor-Zen TIEN, Tzong-Sheng CHANG
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Patent number: 10515866Abstract: Some embodiments relate to a semiconductor device. The semiconductor device includes a layer disposed over a substrate. A conductive body extends through the layer. A plurality of bar or pillar structures are spaced apart from one another and laterally surround the conductive body. The plurality of bar or pillar structures are generally concentric around the conductive body.Type: GrantFiled: December 13, 2018Date of Patent: December 24, 2019Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Ying-Chieh Liao, Han-Wei Yang, Chen-Chung Lai, Kang-Min Kuo, Bor-Zen Tien
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Patent number: 10515902Abstract: Among other things, one or more semiconductor arrangements, and techniques for forming such semiconductor arrangements are provided. A layer, such as a poly layer or an inter layer dielectric (ILD) layer, is formed over a substrate. A photoresist mask is formed over the layer. The photoresist mask comprises an open region overlaying a target region of the layer and comprises a protection region overlaying a second region of the layer. An etching process is performed through the open region to reduce a height of the layer in the target region in relation to a height of the layer in the second region because the protection region inhibits the etching process from affecting the layer in the second region. A first structure, having a first height, is formed within the target region. A second structure, having a second height greater than the first height, is formed within the second region.Type: GrantFiled: January 15, 2018Date of Patent: December 24, 2019Assignee: Taiwan Semiconductor Manufacturing Company LimitedInventors: Tsung-Yu Chiang, Chen Kuang-Hsin, Bor-Zen Tien, Tzong-Sheng Chang
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Patent number: 10347766Abstract: Embodiments of the present disclosure relate generally to a semiconductor device and method of fabricating the same, the semiconductor device includes a semiconductor substrate and a gate stack disposed over a channel region of the semiconductor device, the gate stack includes an oxidation layer, a gate dielectric and a gate electrode, the oxidation layer at least covers a portion of the channel region of the semiconductor device and may act as a barrier to prevent damage to the underlying features, such as the source and drain regions, during removal of a dummy gate in a gate last process.Type: GrantFiled: September 2, 2014Date of Patent: July 9, 2019Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Wei-Shuo Ho, Chia-Ming Chang, Tsung-Yu Chiang, Kuang-Hsin Chen, Bor-Zen Tien