Patents by Inventor Bor-Zen Tien
Bor-Zen Tien has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20190115273Abstract: Some embodiments relate to a semiconductor device. The semiconductor device includes a layer disposed over a substrate. A conductive body extends through the layer. A plurality of bar or pillar structures are spaced apart from one another and laterally surround the conductive body. The plurality of bar or pillar structures are generally concentric around the conductive body.Type: ApplicationFiled: December 13, 2018Publication date: April 18, 2019Inventors: Ying-Chieh Liao, Han-Wei Yang, Chen-Chung Lai, Kang-Min Kuo, Bor-Zen Tien
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Patent number: 10157810Abstract: Some embodiments relate to a semiconductor device. The semiconductor device includes a layer disposed over a substrate. A conductive body extends through the layer. A plurality of bar or pillar structures are spaced apart from one another and laterally surround the conductive body. The plurality of bar or pillar structures are generally concentric around the conductive body.Type: GrantFiled: September 25, 2017Date of Patent: December 18, 2018Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Ying-Chieh Liao, Han-Wei Yang, Chen-Chung Lai, Kang-Min Kuo, Bor-Zen Tien
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Patent number: 10134626Abstract: A semiconductor device is provided. The semiconductor device includes a doped isolation structure formed above a substrate, and the doped isolation structure includes a first doped portion and a second doped portion, and a doped concentration of the second doped portion is different from a doped concentration of the first doped portion. The semiconductor device also includes a first fin partially embedded in the doped isolation structure, and a sidewall surface of the first fin is in direct contact with the first doped portion. The semiconductor device includes a second fin partially embedded in the doped isolation structure, and the doped isolation structure is between the first fin and the second fin, and a sidewall surface of the second fin is in direct contact with the second doped portion.Type: GrantFiled: December 11, 2017Date of Patent: November 20, 2018Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Tsung-Yu Chiang, Chung-Wei Lin, Kuang-Hsin Chen, Bor-Zen Tien
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Patent number: 10014251Abstract: A semiconductor device with the metal fuse is provided. The metal fuse connects an electronic component (e.g., a transistor) and a existing dummy feature which is grounded. The protection of the metal fuse can be designed to start at the beginning of the metallization formation processes. The grounded dummy feature provides a path for the plasma charging to the ground during the entire back end of the line process. The metal fuse is a process level protection as opposed to the diode, which is a circuit level protection. As a process level protection, the metal fuse protects subsequently-formed circuitry. In addition, no additional active area is required for the metal fuse in the chip other than internal dummy patterns that are already implemented.Type: GrantFiled: March 5, 2016Date of Patent: July 3, 2018Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Chen-Chung Lai, Kang-Min Kuo, Yen-Ming Peng, Gwo-Chyuan Kuoh, Han-Wei Yang, Yi-Ruei Lin, Chin-Chia Chang, Ying-Chieh Liao, Che-Chia Hsu, Bor-Zen Tien
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Publication number: 20180138129Abstract: Among other things, one or more semiconductor arrangements, and techniques for forming such semiconductor arrangements are provided. A layer, such as a poly layer or an inter layer dielectric (ILD) layer, is formed over a substrate. A photoresist mask is formed over the layer. The photoresist mask comprises an open region overlaying a target region of the layer and comprises a protection region overlaying a second region of the layer. An etching process is performed through the open region to reduce a height of the layer in the target region in relation to a height of the layer in the second region because the protection region inhibits the etching process from affecting the layer in the second region. A first structure, having a first height, is formed within the target region. A second structure, having a second height greater than the first height, is formed within the second region.Type: ApplicationFiled: January 15, 2018Publication date: May 17, 2018Inventors: Tsung-Yu CHIANG, Chen KUANG-HSIN, Bor-Zen TIEN, Tzong-Sheng CHANG
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Publication number: 20180102278Abstract: A semiconductor device is provided. The semiconductor device includes a doped isolation structure formed above a substrate, and the doped isolation structure includes a first doped portion and a second doped portion, and a doped concentration of the second doped portion is different from a doped concentration of the first doped portion. The semiconductor device also includes a first fin partially embedded in the doped isolation structure, and a sidewall surface of the first fin is in direct contact with the first doped portion. The semiconductor device includes a second fin partially embedded in the doped isolation structure, and the doped isolation structure is between the first fin and the second fin, and a sidewall surface of the second fin is in direct contact with the second doped portion.Type: ApplicationFiled: December 11, 2017Publication date: April 12, 2018Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Tsung-Yu CHIANG, Chung-Wei LIN, Kuang-Hsin CHEN, Bor-Zen TIEN
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Patent number: 9870998Abstract: Among other things, one or more semiconductor arrangements, and techniques for forming such semiconductor arrangements are provided. A layer, such as a poly layer or an inter layer dielectric (ILD) layer, is formed over a substrate. A photoresist mask is formed over the layer. The photoresist mask comprises an open region overlaying a target region of the layer and comprises a protection region overlaying a second region of the layer. An etching process is performed through the open region to reduce a height of the layer in the target region in relation to a height of the layer in the second region because the protection region inhibits the etching process from affecting the layer in the second region. A first structure, having a first height, is formed within the target region. A second structure, having a second height greater than the first height, is formed within the second region.Type: GrantFiled: October 23, 2015Date of Patent: January 16, 2018Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LIMITEDInventors: Tsung-Yu Chiang, Chen Kuang-Hsin, Bor-Zen Tien, Tzong-Sheng Chang
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Publication number: 20180012818Abstract: Some embodiments relate to a semiconductor device. The semiconductor device includes a layer disposed over a substrate. A conductive body extends through the layer. A plurality of bar or pillar structures are spaced apart from one another and laterally surround the conductive body. The plurality of bar or pillar structures are generally concentric around the conductive body.Type: ApplicationFiled: September 25, 2017Publication date: January 11, 2018Inventors: Ying-Chieh Liao, Han-Wei Yang, Chen-Chung Lai, Kang-Min Kuo, Bor-Zen Tien
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Patent number: 9842761Abstract: A semiconductor device is provided. The semiconductor device includes a first fin partially surrounded by a first isolation structure and a second fin partially surrounded by a second isolation structure. The second isolation structure has a dopant concentration higher than that of the first isolation structure, and a height difference is between a top surface of the first isolation structure and a top surface of the second isolation structure.Type: GrantFiled: January 27, 2017Date of Patent: December 12, 2017Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Tsung-Yu Chiang, Chung-Wei Lin, Kuang-Hsin Chen, Bor-Zen Tien
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Publication number: 20170323827Abstract: An apparatus includes a plurality of interconnect structures over a substrate, a dielectric layer formed over a top metal line of the plurality of interconnect structures, a first barrier layer on a bottom and sidewalls of an opening in the dielectric layer, wherein the first barrier layer is formed of a first material and has a first thickness, a second barrier layer over the first barrier layer, wherein the second barrier layer is formed of a second material different from the first material and has a second thickness and a pad over the second barrier layer, wherein the pad is formed of a third material.Type: ApplicationFiled: July 24, 2017Publication date: November 9, 2017Inventors: Bor-Zen Tien, Jhu-Ming Song, Hsuan-Han Lin, Kuang-Hsin Chen, Mu-Yi Lin, Tzong-Sheng Chang
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Patent number: 9773716Abstract: A semiconductor device is disclosed in some embodiments. The device includes a substrate, and a layer disposed over the substrate. The layer includes an opening extending through the layer. A plurality of bar or pillar structures or a tapered region are arranged in a peripheral portion of the opening and laterally surround a central portion of the opening. A metal body extends through the central portion of the opening.Type: GrantFiled: May 4, 2016Date of Patent: September 26, 2017Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Ying-Chieh Liao, Han-Wei Yang, Chen-Chung Lai, Kang-Min Kuo, Bor-Zen Tien
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Patent number: 9716034Abstract: A method comprises forming a plurality of interconnect components over a gate structure, wherein a bottom metal line of the interconnect components is connected to the gate structure through a gate plug, depositing a dielectric layer over a top metal line of the interconnect components, forming an opening in the dielectric layer, depositing a first barrier layer on a bottom and sidewalls of the opening using a non-plasma based deposition process, depositing a second barrier layer over the first barrier layer using a plasma based deposition process and forming a pad in the opening.Type: GrantFiled: October 20, 2015Date of Patent: July 25, 2017Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Bor-Zen Tien, Jhu-Ming Song, Hsuan-Han Lin, Kuang-Hsin Chen, Mu-Yi Lin, Tzong-Sheng Chang
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Publication number: 20170140980Abstract: A semiconductor device is provided. The semiconductor device includes a first fin partially surrounded by a first isolation structure and a second fin partially surrounded by a second isolation structure. The second isolation structure has a dopant concentration higher than that of the first isolation structure, and a height difference is between a top surface of the first isolation structure and a top surface of the second isolation structure.Type: ApplicationFiled: January 27, 2017Publication date: May 18, 2017Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: Tsung-Yu CHIANG, Chung-Wei LIN, Kuang-Hsin CHEN, Bor-Zen TIEN
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Patent number: 9559011Abstract: Methods for forming a semiconductor device are provided. The method includes forming a first fin and a second fin over a substrate and forming a first isolation structures and a second isolation structure adjacent to the substrate. The first fin is partially surrounded by the first isolation structure and a second fin is partially surrounded by the second isolation structure, and the first isolation structure has a dopant concentration higher than that of the second isolation structure.Type: GrantFiled: October 21, 2015Date of Patent: January 31, 2017Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Tsung-Yu Chiang, Chung-Wei Lin, Kuang-Hsin Chen, Bor-Zen Tien
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Patent number: 9508590Abstract: In some embodiments, a method of manufacturing a device includes providing a first device with an isolation area, an active area next to the isolation area, a metal gate above the isolation area and the active area, and a dielectric layer above the metal gate. The method also includes forming a first opening within a conductive layer of the metal gate, and a second opening within the dielectric layer. The first opening and the second opening are connected, and are of a first shape. The method further includes expanding the first opening to form a third opening of a second shape within the conductive layer of the metal gate and beneath the dielectric layer, forming a first contact part by filling the third opening, and forming a second contact part by filling the second opening, the first contact part being connected to the second contact part.Type: GrantFiled: January 15, 2016Date of Patent: November 29, 2016Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Tsung-Yu Chiang, Kuang-Hsin Chen, Bor-Zen Tien, Tzong-Sheng Chang
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Publication number: 20160247741Abstract: A semiconductor device is disclosed in some embodiments. The device includes a substrate, and a layer disposed over the substrate. The layer includes an opening extending through the layer. A plurality of bar or pillar structures or a tapered region are arranged in a peripheral portion of the opening and laterally surround a central portion of the opening. A metal body extends through the central portion of the opening.Type: ApplicationFiled: May 4, 2016Publication date: August 25, 2016Inventors: Ying-Chieh Liao, Han-Wei Yang, Chen-Chung Lai, Kang-Min Kuo, Bor-Zen Tien
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Patent number: 9412866Abstract: The present disclosure relates to an integrated chip having one or more back-end-of-the-line (BEOL) selectivity stress films that apply a stress that improves the performance of semiconductor devices underlying the BEOL selectivity stress films, and an associated method of formation. In some embodiments, the integrated chip has a semiconductor substrate with one or more semiconductor devices having a first device type. A stress transfer element is located within a back-end-of-the-line stack at a position over the one or more semiconductor devices. A selectivity stress film is located over the stress transfer element. The selectivity stress film induces a stress upon the stress transfer element, wherein the stress has a compressive or tensile state depending on the first device type of the one or more semiconductor devices. The stress acts upon the one or more semiconductor devices to improve their performance.Type: GrantFiled: June 24, 2013Date of Patent: August 9, 2016Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Gwo-Chyuan Kuoh, Chen-Chung Lai, Kang-Min Kuo, Bor-Zen Tien, Yen-Ming Peng
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Publication number: 20160190064Abstract: A semiconductor device with the metal fuse is provided. The metal fuse connects an electronic component (e.g., a transistor) and a existing dummy feature which is grounded. The protection of the metal fuse can be designed to start at the beginning of the metallization formation processes. The grounded dummy feature provides a path for the plasma charging to the ground during the entire back end of the line process. The metal fuse is a process level protection as opposed to the diode, which is a circuit level protection. As a process level protection, the metal fuse protects subsequently-formed circuitry. In addition, no additional active area is required for the metal fuse in the chip other than internal dummy patterns that are already implemented.Type: ApplicationFiled: March 5, 2016Publication date: June 30, 2016Inventors: Chen-Chung LAI, Kang-Min KUO, Yen-Ming PENG, Gwo-Chyuan KUOH, Han-Wei YANG, Yi-Ruei LIN, Chin-Chia CHANG, Ying-Chieh LIAO, Che-Chia HSU, Bor-Zen TIEN
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Patent number: 9349688Abstract: A semiconductor device having enhanced passivation integrity is disclosed. The device includes a substrate, a first layer, and a metal layer. The first layer is formed over the substrate. The first layer includes a via opening and a tapered portion proximate to the via opening. The metal layer is formed over the via opening and the tapered portion of the first layer. The metal layer is substantially free from gaps and voids.Type: GrantFiled: July 6, 2015Date of Patent: May 24, 2016Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Ying-Chieh Liao, Han-Wei Yang, Chen-Chung Lai, Kang-Min Kuo, Bor-Zen Tien
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Publication number: 20160133509Abstract: In some embodiments, a method of manufacturing a device includes providing a first device with an isolation area, an active area next to the isolation area, a metal gate above the isolation area and the active area, and a dielectric layer above the metal gate. The method also includes forming a first opening within a conductive layer of the metal gate, and a second opening within the dielectric layer. The first opening and the second opening are connected, and are of a first shape. The method further includes expanding the first opening to form a third opening of a second shape within the conductive layer of the metal gate and beneath the dielectric layer, forming a first contact part by filling the third opening, and forming a second contact part by filling the second opening, the first contact part being connected to the second contact part.Type: ApplicationFiled: January 15, 2016Publication date: May 12, 2016Inventors: Tsung-Yu Chiang, Kuang-Hsin Chen, Bor-Zen Tien, Tzong-Sheng Chang