Abstract: An immersive display for use in a robotic surgical system includes a support arm, a housing mounted to the support arm and configured to engage with a face of the user, at least two eyepiece assemblies disposed in the housing and configured to provide a three-dimensional display, and at least one sensor, wherein the sensor enables operation of the robotic surgical system, and wherein the support arm is actuatable to move the housing for ergonomic positioning.

Abstract: Embodiments of present invention provide a semiconductor structure. The semiconductor structure includes a first device layer on top of a backside back-end-of-line (BEOL) structure; a middle BEOL structure on top of the first device layer, the middle BEOL structure including multiple layers of small pitch wires and multiple layers of large pitch wires on top of the multiple layers of small pitch wires; a second device layer on top of the middle BEOL structure; a frontside BEOL structure on top of the second device layer; a first type via connection from the second device layer to the multiple layers of small pitch wires; and a second type and a third type via connection form the second device layer to the multiple layers of large pitch wires. A method of forming the same is also provided.

Abstract: Embodiments of present invention provide a semiconductor structure. The structure includes a first cell unit including a first set of field-effect-transistors (FETs), a first cell boundary made of a first gate cut region, and a second cell boundary made of a second gate cut region; a second cell unit including a second set of FETs, a third cell boundary made of a third gate cut region, and a fourth cell boundary made of the first gate cut region; and a third cell unit including a third set of FETs, a fifth cell boundary made of the second gate cut region, and a sixth cell boundary made of a fourth gate cut region, where the first and third gate cut regions have a first width and the second and fourth gate cut region has a second width larger than the first width. A method of forming the same is also provided.

Abstract: Embodiments of present invention provide a semiconductor structure. The semiconductor structure includes a plurality of lower metal lines in a first metal level; a transition via directly on top of the plurality of lower metal lines; and an upper metal line directly on top of the transition via and the upper metal line being in a second metal level and orthogonal to the plurality of lower metal lines, where at least a first lower metal line of the plurality of lower metal lines has a recessed region and a rest region, the recessed region is directly underneath the transition via and filled with a dielectric material; and isolates the rest region of the first lower metal line from the transition via. A method of manufacturing the same is also provided.

Abstract: Embodiments of present invention provide a semiconductor structure. The semiconductor structure includes a first and a second dielectric bar each having a left sidewall and a right sidewall; a first set of nanosheets having a first end and a second end that is directly adjacent to the left sidewall of the first dielectric bar; a first conductive layer surrounding the first set of nanosheets and directly adjacent to the left sidewall of the first dielectric bar; a second set of nanosheets having a first end and a second end that is directly adjacent to the left sidewall of the second dielectric bar; and a second conductive layer surrounding the second set of nanosheets; directly adjacent to the left sidewall of the second dielectric bar; and separating the second set of nanosheets from the right sidewall of the first dielectric bar. A method of forming the same is also provided.

Abstract: A semiconductor structure includes an interconnect wiring level having metal lines. An insulating cut shape is disposed through a run length of one of the metal lines wherein the insulating cut shape divides the one of the metal lines into electrically isolated nets.

Abstract: A semiconductor structure includes an upper-level CMOS transistor layer having a plurality of upper-level N-type and P-type field effect transistors; and a frontside interconnect layer above, and interconnected with, the upper-level transistor layer. The frontside interconnect layer includes frontside power rails and frontside signal wiring, and at least three frontside interconnect layer metal levels. A lower-level CMOS transistor layer has a plurality of lower-level N-type and P-type field effect transistors; and a backside interconnect layer below, and interconnected with, the lower-level transistor layer. The backside interconnect layer includes backside power rails and backside signal wiring and at least three backside interconnect layer metal levels.

Abstract: Embodiments of present invention provide a capacitor structure. The capacitor structure includes a moat capacitor embedded in a substrate. The moat capacitor includes a bottom electrode plate; a dielectric layer directly above and lining the bottom electrode plate; and a top electrode plate directly above and lining the dielectric layer, where the bottom electrode plate, the dielectric layer, and the top electrode plate have encircling shapes and are arranged to be concentric with one another. A method of forming the same is also provided.

Abstract: A semiconductor device includes a prime active region and a barrier region within the active prime region to define a barrier across a depth of the active prime region. A bypass structure includes a contact connecting to a component within the active prime region and extending outside the active prime region, a metal layer connecting to the first contact outside the active prime region and a through via passing through the depth of the active prime region and connecting to a solder bump.

Abstract: A semiconductor structure, system, and method of forming a crescent-shaped dielectric isolation layer for stacked field-effect transistors (FETs). The semiconductor structure may include a transistor including an epi. The semiconductor may also include a substrate, where the epi is directly connected to the substrate. The semiconductor may also include an isolation layer directly connected to the epi and the substrate. The system may include a semiconductor structure. The method may include forming an isolation layer directly connected to a substrate. The method may also include forming a first transistor, where forming the first transistor includes growing a first epi, where the first epi is directly connected to the isolation layer and the substrate.

Abstract: A device comprises a first interconnect structure, a second interconnect structure, a first cell comprising a first transistor, a second cell comprising a second transistor, a first contact connecting a source/drain element of the first transistor to the first interconnect structure, and second contact connecting a source/drain element of the second transistor to the second interconnect structure. The first cell is disposed adjacent to the second cell with the first transistor disposed adjacent to the second transistor. The first and second cells are disposed between the first and second interconnect structures.

Abstract: A channel fin extends vertically above a bottom source/drain region, a protective liner is positioned along opposite sidewalls of the bottom source/drain region. The bottom source/drain region is positioned above a semiconductor layer in contact with a first portion of an inner spacer. A first metal layer is positioned between the first portion of the inner spacer and a second portion of the inner spacer, the first portion of the inner spacer partially covers a top surface of the first metal layer and the second portion of the inner spacer substantially covers a bottom surface of the first metal layer for providing a buried power rail. A shallow trench isolation region is positioned above an exposed portion of the first metal layer, the shallow trench isolation region is adjacent to the first portion of the inner spacer, the semiconductor layer, and the bottom source/drain region.

Abstract: A high aspect ratio contact structure formed within a dielectric material includes a top portion and a bottom portion. The top portion of the contact structure includes a tapering profile towards the bottom portion. A first metal stack surrounded by an inner spacer is located within the top portion of the contact structure and a second metal stack is located within the bottom portion of the contact structure. A width of the bottom portion of the contact structure is greater than a minimum width of the top portion of the contact structure.

Abstract: A semiconductor device is provided. The semiconductor device includes an active region, a gate, a gate contact formed on the gate, the gate contact overlapping in plan view with at least a portion of the active region, and a source/drain contact formed on the active region and adjacent to the gate contact. The gate contact is offset from a centerline of the gate in a direction away from the source/drain contact.

Abstract: Embodiments disclosed herein include a semiconductor structure. The semiconductor structure may include a front-end-of-line (FEOL) including a first source/drain (S/D) adjacent to a first gate. A device may include a backside interconnect below the FEOL, with a plurality of signal lines and a plurality of power lines. A device may include an offset gate contact electrically connected between the first gate and a first signal line of the plurality of signal lines, wherein the offset gate contact is located directly below the first S/D.

Abstract: Embodiments provide metal tip-to-tip scaling for metal contacts. A structure includes a first metal line and a second metal line. The structure includes a spacer separating the first metal line from the second metal line, the spacer including a flat surface and curved tips, where the flat surface abuts the first metal line and the curved tips abut the second metal line.

Abstract: A semiconductor integrated circuit (IC) device that includes a backside fuse structure. The backside fuse structure is located within the backside of the semiconductor IC device and may be vertically located between a microdevice and a backside back end of the line (BEOL) network. The backside fuse structure includes at least a fuse wire. The backside fuse structure may be in a non-programmed state or a programmed state. When in a non-programmed state, an open circuit exists that prevents current flow through the fuse wire. The backside fuse structure may be directly connected to a deep via contact and/or one or more conductive pathways within the backside BEOL network.

Abstract: A semiconductor integrated circuit (IC) device includes a backside resistor and a back end of the line (BEOL) network. The backside resistor is located upon a backside of the semiconductor IC device and may be vertically located between a front end of line (FEOL) microdevice, such as a diode and/or a transistor, and the BEOL network. The backside resistor is connected to the backside BEOL network and may be utilized to route current between different conductive pathways within the backside BEOL network or between the backside BEOL network and a frontside BEOL network.

Abstract: A semiconductor device includes a top side and a bottom side opposite the top side. A central portion including a semiconductor substrate is disposed between the top side and the bottom side. A component is disposed in the central portion in contact with the semiconductor substrate. The component includes a first electrical connection from the top side and a second electrical connection from the bottom side.

Abstract: A semiconductor structure is provided that includes a self-aligned offset frontside gate contact structure and a direct backside source/drain contact structure. The presence of the off-centered frontside gate contact structure is attractive since it mitigates the risk of gate contact-to-source/drain contact shorts and it also improves the metal line, M1, spacing within the overlying frontside back-end-of-the-line (BEOL) structure.