Abstract: A long channel field-effect transistor is incorporated in a semiconductor structure. A semiconductor fin forming a channel region is configured as a loop having an opening therein. A dielectric isolation region is within the opening. Source/drain regions epitaxially grown on fin end portions within the opening are electrically isolated by the isolation region. The source/drain regions, the isolation region and the channel are arranged as a closed loop. The semiconductor structure may further include a short channel, vertical transport field-effect transistor.

Abstract: VFET devices having a robust gate extension structure using late gate extension patterning and self-aligned gate and source/drain region contacts are provided. In one aspect, a VFET device includes: at least one bottom source/drain region present on a substrate; at least one fin disposed on the at least one bottom source/drain region, wherein the at least one fin serves as a vertical fin channel of the VFET device; a gate stack alongside the at least one fin; a gate extension metal adjacent to the gate stack at a base of the at least one fin; a barrier layer that separates the gate extension metal from the gate stack; and at least one top source/drain region at a top of the at least one fin. A VFET device that includes multiple VFETs present on a substrate, and a method of forming a VFET device are also provided.

Abstract: Disclosed is an illumination device for use with spoked wheels, such as bicycle wheels, wherein the wheel includes a hub portion, a plurality of spokes, and a rim portion. The illumination device includes a power pack, at least one adaptor body, and at least one attachment portion. The power pack having at least one wire, a flexible button cap, a body housing, and circuit board with a switch. The at least one wire including a plurality of light sources. The at least one attachment portion including a clip portion providing for the installation of the at least one adaptor body to the bicycle spokes. The illumination device also includes a holder for the installation of the power pack to the bicycle wheel. Further, the illumination device may include a tubular body located in the internal cavity of the at least one adaptor body.

Abstract: Disclosed is an illumination device for use with spoked wheels, such as bicycle wheels, wherein the wheel includes a hub portion, a plurality of spokes, and a rim portion. The illumination device includes a power pack, at least one adaptor body, and at least one attachment portion. The power pack having at least one wire, a flexible button cap, a body housing, and circuit board with a switch. The at least one wire including a plurality of light sources. The at least one attachment portion including a clip portion providing for the installation of the at least one adaptor body to the bicycle spokes. The illumination device also includes a holder for the installation of the power pack to the bicycle wheel. Further, the illumination device may include a tubular body located in the internal cavity of the at least one adaptor body.

Abstract: Embodiments disclosed herein describe semiconductor devices that include semiconductor structures and methods of forming the semiconductor structures. The semiconductor structures may include an upper conductive line, a first lower conductive line laterally insulated by a first lower dielectric region and a second lower dielectric region. The semiconductor structure also includes a lower level via region above the first lower conductive line. The lower level via region includes a dielectric blocking material and a spacer material.

Abstract: A semiconductor device includes a dielectric isolation layer, a plurality of gates formed above the dielectric isolation layer, a plurality of source/drain regions above the dielectric isolation layer between the plurality of gates, and at least one contact placeholder for a backside contact. The at least one contact placeholder contacts a bottom surface of a first source/drain region of the plurality of source/drain regions. The semiconductor device further includes at least one backside contact contacting a bottom surface of a second source/drain region of the plurality of source/drain regions, and a buried power rail arranged beneath, and contacting the at least one backside contact.

Abstract: Currently disclosed is a device for increasing visibility of a guy line at night. The device includes a housing, a light emitting source, a power source, and an on/off switch. The housing having an internal portion, external portion, and an attachment mechanism located on the external portion of the housing locking in place the housing to the guy line. The light emitting source is located within the housing and powered by the power source. The on/off switch is in contact with the power source providing readily activation of the light emitting source. The attachment mechanism may comprise at least one hook portion and a tensioning mechanism. The tensioning mechanism may comprise at least one offset portion. The tensioning mechanism prevents the device from sliding down the guy line.

Abstract: A semiconductor structure includes a power distribution network including a first buried power rail, a power wire, and a first buried via electrically interconnecting the first buried power rail and the power wire. Each of the first buried power rail, the power wire, and the first buried via have a liner on a corresponding bottom surface thereof and sidewalls thereof. The structure also includes a dielectric layer outward of the power distribution network; a first field effect transistor outward of the dielectric layer; a first via trench contact electrically interconnecting a source/drain region of the transistor to the first buried power rail; a first outer wire outward of the first field effect transistor; and an electrical path electrically interconnecting the first outer wire with the power wire.

Abstract: A sound and illumination device including a sound-making portion, an illumination portion, and an attachment portion for mounting on a bicycle. The sound-making portion including a lever, a spring, a striking portion, and a metal portion, wherein the metal portion covers the lever, the spring, and the striking portion. The lever may include a magnet. The illumination portion including a cover portion, an electrical circuit, a switch, a light emitting source and a power source. Actuation of the lever of the sound-making portion results in the activation of the light emitting source of the illumination portion resulting in the concurrent emission of light and sound.

Abstract: Semiconductor integrated circuit devices are provided which have standard cells with ultra-short standard cell heights. For example, a device comprises an integrated circuit comprising a standard cell which comprises a first cell boundary and a second cell boundary. The standard cell comprises an n-track cell height defined by a distance between the first cell boundary and the second cell boundary, wherein n is four or less.

Abstract: A semiconductor structure includes a power rail contact at least partially disposed between a first source/drain region of a first vertical fin structure and a second source/drain region of a second vertical fin structure. The power rail contact is in contact with a buried power rail disposed under the first and second vertical fin structures. The power rail contact is in contact with at least one of the first and second source/drain regions. A contact cap is disposed above the power rail contact.

Abstract: A technique relates to an integrated circuit (IC). The IC includes a conductive line formed on a conductive via, the conductive line being formed though a dielectric material. The IC includes an etch stop layer having one or more extended portions intervening between one or more edge portions of the conductive line and the conductive via, the one or more edge portions being at a periphery of the conductive line and the conductive via, the etch stop layer including a higher dielectric breakdown than the dielectric material. The one or more extended portions of the etch stop layer cause the conductive line to be formed with a bottom part having a reduced dimension than an upper part of the conductive line.

Abstract: Currently disclosed is a device for increasing visibility of a guy line at night. The device includes a housing, a light emitting source, a power source, and an on/off switch. The housing having an internal portion, external portion, and an attachment mechanism located on the external portion of the housing locking in place the housing to the guy line. The light emitting source is located within the housing and powered by the power source. The on/off switch is in contact with the power source providing readily activation of the light emitting source. The attachment mechanism may comprise at least one hook portion and a tensioning mechanism. The tensioning mechanism may comprise at least one offset portion. The tensioning mechanism prevents the device from sliding down the guy line.

Abstract: A sound and illumination device including a sound-making portion, an illumination portion, and an attachment portion for mounting on a bicycle. The sound-making portion including a lever, a spring, a striking portion, and a metal portion, wherein the metal portion covers the lever, the spring, and the striking portion. The lever may include a magnet. The illumination portion including a cover portion, an electrical circuit, a switch, a light emitting source and a power source. Actuation of the lever of the sound-making portion results in the activation of the light emitting source of the illumination portion resulting in the concurrent emission of light and sound.

Abstract: A method of manufacturing a semiconductor device is provided. The method includes forming a first trench partially through a first substrate from a first side of the first substrate. The method also includes widening a bottom portion of the first trench to form a lateral footing area of the first trench. The method includes forming a first metallization in the first trench; forming a second trench through a second substrate from a second side of the second substrate to expose at least a portion of first metallization in an area corresponding to the lateral footing area of the first trench, the second side being opposite to the first side. The method also includes forming a second metallization in the second trench in contact with the first metallization.

Abstract: A semiconductor device containing a self-aligned contact rail is provided. The self-aligned contact rail can have a reduced critical dimension, CD. The self-aligned contact rail can be obtained utilizing a sacrificial semiconductor fin as a placeholder structure for the contact rail. The used of the sacrificial semiconductor fin enables reduced, and more controllable, CDs.

Abstract: A method of forming a top via is provided. The method includes forming a sacrificial trench layer and conductive trench plug in an interlayer dielectric (ILD) layer on a conductive line. The method further includes forming a cover layer on the ILD layer, sacrificial trench layer, and conductive trench plug, and forming a sacrificial channel layer and a conductive channel plug on the conductive trench plug. The method further includes removing the cover layer and the ILD layer to expose the sacrificial trench layer and the sacrificial channel layer. The method further includes removing the sacrificial trench layer and the sacrificial channel layer, and forming a barrier layer on the conductive channel plug and conductive trench plug.

Abstract: An approach providing a semiconductor wiring structure with a self-aligned top via on a first metal line and under a second metal line. The semiconductor wiring structure includes a plurality of first metal lines in a bottom portion of a first dielectric material. The semiconductor wiring structure includes a top via in a top portion of the first dielectric material, where the top via is over a first metal line of the plurality of first metal lines. The semiconductor wiring structure includes a second dielectric material above each of the plurality of first metal lines except the first metal line of the plurality of first metal lines. Furthermore, the semiconductor wiring structure includes a second metal line above the top via, wherein the second metal line is in a third dielectric material and a hardmask layer that is under the third dielectric material.

Abstract: An apparatus includes a fin, a gate, and a gate contact. A portion of the fin is disposed in a first layer. The gate is disposed in the first layer and adjacent to the fin. The gate contact is disposed on the gate and in a second layer, wherein the second layer is disposed on the first layer such that the gate contact is above the fin.