Abstract: Multiple-ferroelectric capacitor structures in memory devices, including in integrated circuit devices, and techniques for forming the structures. Insulators separating individual outer plates in a ferroelectric capacitor array are supported between wider portions of a shared, inner plate. Wider portions of an inner plate may be formed in lateral recesses between insulating layers. Ferroelectric material may be deposited over the inner plate between insulating layers after removing sacrificial layers. An etch-stop layer may protect the inner plate when sacrificial layers are removed. An etch-stop or interface layer may remain over the inner plate adjacent insulators.

Abstract: In one embodiment, an apparatus includes a first metal layer, a second metal layer above the first metal layer, a first metal via generally perpendicular with and connected to the first metal layer, a second metal via generally perpendicular with and connected to the second metal layer, a third metal via generally perpendicular with and extending through the first metal layer and the second metal layer, a ferroelectric material between the third metal via and the first metal layer and between the third metal via and the second metal layer, and a hard mask material around a portion of the first metal via above the first metal layer and the second metal layer, around a portion of the second metal via above the first metal layer and the second metal layer, and around a portion of the ferroelectric material above the first metal layer and the second metal layer.

Abstract: A memory device includes a group of ferroelectric capacitors with a shared plate that extends through the ferroelectric capacitors, has a greatest width between ferroelectric capacitors, and is coupled to an access transistor. The shared plate may be vertically between ferroelectric layers of the ferroelectric capacitors at the shared plate's greatest width. The memory device may include an integrated circuit die and be coupled to a power supply. Forming a group of ferroelectric capacitors includes forming an opening through an alternating stack of insulators and conductive plates, selectively forming ferroelectric material on the conductive plates rather than the insulators, and forming a shared plate in the opening over the ferroelectric material.

Abstract: Apparatuses, memory systems, capacitor structures, and techniques related to anti-ferroelectric capacitors having a cerium oxide doped hafnium zirconium oxide based anti-ferroelectric are described. A capacitor includes layers of hafnium oxide, cerium oxide, and zirconium oxide between metal electrodes. The cerium of the cerium oxide provides a mid gap state to protect the hafnium zirconium oxide during operation.

Abstract: Methods, systems, and use cases for one-touch inline cryptographic data security are discussed, including an edge computing device with a network communications circuitry (NCC), an enhanced DMA engine coupled to a memory device and including a cryptographic engine, and processing circuitry configured to perform a secure exchange with a second edge computing device to negotiate a shared symmetric encryption key, based on a request for data. An inline encryption command for communication to the enhanced DMA engine is generated. The inline encryption command includes a first address associated with a storage location storing the data, a second address associated with a memory location in the memory device, and the shared symmetric encryption key. The data is retrieved from the storage location using the first address, the data is encrypted using the shared symmetric encryption key, and the encrypted data is stored in the memory location using the second address.

Abstract: Systems and methods of a laser welding device are disclosed. The laser welding device includes a laser generator configured to generate welding-type lasing power. A lens focuses the welding-type lasing power at a focal point on a workpiece to generate a puddle during a welding-type operation. A wire feeder is configured to feed wire to the puddle generated by the laser generator. A laser scanner controls the lens to move the focal point of the welding-type lasing power in multiple dimensions over the workpiece during the welding-type operation. In some examples, the feed wire is used in an additive manufacturing process.

Abstract: Tamper-proof covers for enclosing hose connectors or cable connectors are described. The tamper proof covers may include first and second sections configured to fit about the long axis of the connector and to join to cover at least a portion of the connector so that the connector cannot be disconnected without removing the cover. The sections may be held in place using a cable seal, which must be cut to remove the cover.

Abstract: Embodiments herein describe techniques for a semiconductor device including a semiconductor substrate, a first device of a first wafer, and a second device at back end of a second wafer, where the first device is bonded with the second device. A first metal electrode of the first device within a first dielectric layer is coupled to an n-type oxide TFT having a channel layer that includes an oxide semiconductor material. A second metal electrode of the second device within a second dielectric layer is coupled to p-type organic TFT having a channel layer that includes an organic material. The first dielectric layer is bonded to the second dielectric layer, and the first metal electrode is bonded to the second metal electrode. The n-type oxide TFT and the p-type organic TFT form a symmetrical pair of transistors of a CMOS circuit. Other embodiments may be described and/or claimed.

Abstract: IC device including back-end-of-line (BEOL) transistors with crystalline channel material. A BEOL crystalline seed may be formed over a dielectric layer that has been planarized over a front-end-of-line (FEOL) transistor level that employs a monocrystalline substrate semiconductor. The BEOL crystalline seed may be epitaxial to the substrate semiconductor, or may have crystallinity independent of that of the substrate semiconductor. The BEOL crystalline seed may comprise a first material having a higher melt temperature than a melt material formed over the seed and over the dielectric layer. Through rapid melt growth, the melt material may be heated to a temperature sufficient to transition from an as-deposited state to a more crystalline state that is derived from, and therefore associated with, the BEOL crystalline seed. A BEOL transistor may then be fabricated from the crystallized material.

Abstract: A portable fuel metering system (PMU) is described. The PMU has one or more flow meters capable of metering the flow of fluids, such as fuel, as the fluid is transferred from a source to a receiver. The PMU may include a telemetry unit configured to transmit parameters related to the fuel transfer to remote location. The PMU may be configured in a light, portable package that may be carried by one or two people. The PMU may include a power generator that is configured to use the flow of fluid to the PMU to generate power for the PMU's operation.

Abstract: A mobile fuel monitoring system (MMU) is disclosed. The fuel monitoring system may be skid mounted and is configured to monitor fuel transfers between a fuel source and a vessel, such as a ship. The disclosed MMU is a stand-alone, self-contained unit that can be easily moved from place to place. The MMU is configured to monitor and remotely report custody transfers of fuel performed at any location. Parameters of the fuel transfer operation, such as the amount of fuel transferred, the flow rate, the fuel density, and fuel temperature can be monitored and alarms may be issued if any of the parameters are out of specification. The parameter values may be transmitted to a remote location, for example, via a satellite link.

Abstract: A transistor is disclosed. The transistor includes a p-type region, an intrinsic region coupled to the p-type region, an n-type region coupled to the intrinsic region, and a gate electrode above the intrinsic region. The ferroelectric material is on a bottom, a first side and a second side of the gate electrode, and above the intrinsic region.

Abstract: An apparatus comprises a magnetic tunnel junction (MTJ) including a free magnetic layer, a fixed magnetic layer, and a tunnel barrier between the free and fixed layers, the tunnel barrier directly contacting a first side of the free layer, a capping layer contacting the second side of the free magnetic layer and boron absorption layer positioned a fixed distance above the capping layer.

Abstract: A memory cell is disclosed. The memory cell includes a word line contact, a cylindrical electrode having a top region and a bottom region, and RRAM material covering the surface of the cylindrical electrode from the top region to the bottom region. A select transistor contact is coupled to the bottom region of the cylindrical electrode.

Abstract: A MTJ device includes a free (storage) magnet and fixed (reference) magnet between first and second electrodes, and a programmable booster between the free magnet and one of the electrodes. The booster has a magnetic material layer. The booster may further have an interface layer that supports the formation of a skyrmion spin texture, or a stable ferromagnetic domain, within the magnetic material layer. A programming current between two circuit nodes may be employed to set a position of the skyrmion or magnetic domain within the magnetic material layer to be more proximal to, or more distal from, the free magnet. The position of the skyrmion or magnetic domain to the MTJ may modulate TMR ratio of the MTJ device. The TMR ratio modulation may be employed to discern more than two states of the MTJ device. Such a multi-level device may, for example, be employed to store 2 bits/cell.

Abstract: Integrated circuits including 3D memory structures are disclosed. Air-gaps are purposefully introduced between word lines. The word lines may be horizontal or vertical.

Abstract: A backend electrostatic discharge (ESD) diode device structure is presented comprising: a first structure comprising a first material, wherein the first material includes metal; a second structure adjacent to the first structure, wherein the second structure comprises a second material, wherein the second material includes a semiconductor or an oxide; and a third structure adjacent to the second structure, wherein the third structure comprises the first material, wherein the second structure is between the first and third structures.

Abstract: A mobile fuel monitoring system (MMU) is disclosed. The fuel monitoring system may be skid mounted and is configured to monitor fuel transfers between a fuel source and a vessel, such as a ship. The disclosed MMU is a stand-alone, self-contained unit that can be easily moved from place to place. The MMU is configured to monitor and remotely report custody transfers of fuel performed at any location. Parameters of the fuel transfer operation, such as the amount of fuel transferred, the flow rate, the fuel density, and fuel temperature can be monitored and alarms may be issued if any of the parameters are out of specification. The parameter values may be transmitted to a remote location, for example, via a satellite link.

Abstract: A mobile fuel monitoring system (MMU) is disclosed. The fuel monitoring system may be skid mounted and is configured to monitor fuel transfers between a fuel source and a vessel, such as a ship. The disclosed MMU is a stand-alone, self-contained unit that can be easily moved from place to place. The MMU is configured to monitor and remotely report custody transfers of fuel performed at any location. Parameters of the fuel transfer operation, such as the amount of fuel transferred, the flow rate, the fuel density, and fuel temperature can be monitored and alarms may be issued if any of the parameters are out of specification. The parameter values may be transmitted to a remote location, for example, via a satellite link.

Abstract: A backend electrostatic discharge (ESD) diode device structure is presented comprising: a first structure comprising a first material, wherein the first material includes metal; a second structure adjacent to the first structure, wherein the second structure comprises a second material, wherein the second material includes a semiconductor or an oxide; and a third structure adjacent to the second structure, wherein the third structure comprises of the first material, wherein the second structure is between the first and third structures. Other embodiments are also disclosed and claimed.