Abstract: A system comprises an article comprising one or more fabric layers, a plurality of electronic devices, each being incorporated into or onto one of the one or more fabric layers, and one or more communication links between two or more of the plurality of electronic devices. Each of the plurality of electronic devices can comprise a flexible substrate coupled to the fabric layer, one or more metallization layers deposited on the flexible substrate, and one or more electronic components electrically coupled to the one or more metallization layers.

Abstract: Some embodiments include apparatuses and methods having a memory element included in a non-volatile memory cell, a transistor, an access line coupled to a gate to the transistor, a first conductive line, and a second conductive line. The memory element can include a conductive oxide material located over a substrate and between the first and second conductive lines. The memory element includes a portion coupled to a drain of the transistor and another portion coupled to the second conductive line. The first conductive line is coupled to a source of the transistor and can be located between the access line and the memory element. The access line has a length extending in a first direction and can be located between the substrate and the memory element. The first and second conductive lines have lengths extending in a second direction.

Abstract: Exemplary embodiments of an exercise apparatus and its method of use are provided. An exercise apparatus can be provided having a resilient ball configured to support a weight of a user performing exercises thereon, and a shell member configured to cover at least an upper portion of the resilient ball. The shell member can have an inner surface conforming to an outer surface of the resilient ball. A toroidal member can be provided that can be attached to the shell member and can surround a portion of the resilient ball.

Abstract: A system comprises an article comprising one or more fabric layers, a plurality of electronic devices, each being incorporated into or onto one of the one or more fabric layers, and one or more communication links between two or more of the plurality of electronic devices. Each of the plurality of electronic devices can comprise a flexible substrate coupled to the fabric layer, one or more metallization layers deposited on the flexible substrate, and one or more electronic components electrically coupled to the one or more metallization layers.

Abstract: A method of patterning a metal (141, 341, 841) on a vertical sidewall (132, 332, 832) of an excavated feature (130, 330, 830) includes placing a material (350) in the excavated feature such that a portion (435) of the metal is exposed in the excavated feature above the material, etching the exposed portion of the metal away from the vertical sidewall using a first wet etch chemistry, and removing the material from the excavated feature by etching it away using a second wet etch chemistry. The described method may be used to produce a MIM capacitor (800) suitable for an eDRAM device.

Abstract: Automated techniques are provided for determining root causes of web site performance or availability problems. Performance metrics falling within a data analysis window are evaluated by a performance monitoring tool, where the performance metrics pertain to the loading of a web page. From the data analysis, particular problems may be surfaced for further consideration. Root causes are also determined for the surfaced problems and published by the performance monitoring tool.

Abstract: Methods and systems to read a logic value stored in a magnetic tunnel junction (MTJ)-based memory cell based on a pulsed read current, with time between pulses to permit the MTJ to relax towards the magnetization orientation between the pulses, which may reduce build-up of momentum within the MTJ, and which may reduce and/or eliminate inadvertent re-alignment of a magnetization orientation. A sequence of symmetric and/or non-symmetric pulses may be applied to a wordline (WL) to cause a pre-charged bit line (BL) capacitance to discharge a pulsed read current through the MTJ, resulting in a corresponding sequence of voltage changes on the BL. The BL voltage changes may be integrated over the sequence of read current pulses, and a stored logic value may be determined based on the integrated voltage changes. The pre-charged BL capacitance may also serve as the voltage integrator.

Abstract: Magnetic tunnel junctions (MTJ) suitable for spin transfer torque memory (STTM) devices, include perpendicular magnetic layers and one or more anisotropy enhancing layer(s) separated from a free magnetic layer by a crystallization barrier layer. In embodiments, an anisotropy enhancing layer improves perpendicular orientation of the free magnetic layer while the crystallization barrier improves tunnel magnetoresistance (TMR) ratio with better alignment of crystalline texture of the free magnetic layer with that of a tunneling layer.

Abstract: A system comprises an article comprising one or more fabric layers, a plurality of electronic devices, each being incorporated into or onto one of the one or more fabric layers, and one or more communication links between two or more of the plurality of electronic devices. Each of the plurality of electronic devices can comprise a flexible substrate coupled to the fabric layer, one or more metallization layers deposited on the flexible substrate, and one or more electronic components electrically coupled to the one or more metallization layers.

Abstract: Among other disclosed subject matter, a computer-implemented method includes receiving illustrated content. The illustrated content includes half-tone content. The method includes blurring at least part of the illustrated content. The blurring is performed according to a blur radius. The method includes downscaling the blurred illustrated content to an output size.

Abstract: Embodiments of an apparatus and methods for improving multi-gate device performance are generally described herein. Other embodiments may be described and claimed.

Abstract: The invention pertains to the field of construction of buildings and structures. The invention relates to alignment guides for constructing building components, namely walls, ceilings and floors to be used in buildings and structures. This invention also relates to kits of specific alignment guides and methods of using alignment guides.

Abstract: Magnetic tunnel junctions (MTJ) suitable for spin transfer torque memory (STTM) devices, include perpendicular magnetic layers and one or more anisotropy enhancing layer(s) separated from a free magnetic layer by a crystallization barrier layer. In embodiments, an anisotropy enhancing layer improves perpendicular orientation of the free magnetic layer while the crystallization barrier improves tunnel magnetoresistance (TMR) ratio with better alignment of crystalline texture of the free magnetic layer with that of a tunneling layer.

Abstract: Magnetic tunnel junctions (MTJ) suitable for spin transfer torque memory (STTM) devices, include perpendicular magnetic layers and one or more anisotropy enhancing layer(s) separated from a free magnetic layer by a crystallization barrier layer. In embodiments, an anisotropy enhancing layer improves perpendicular orientation of the free magnetic layer while the crystallization barrier improves tunnel magnetoresistance (TMR) ratio with better alignment of crystalline texture of the free magnetic layer with that of a tunneling layer.

Abstract: An embodiment includes a magnetic tunnel junction (MTJ) including a free magnetic layer, a fixed magnetic layer, and a tunnel barrier between the free and fixed layers; the tunnel barrier directly contacting a first side of the free layer; and an oxide layer directly contacting a second side of the free layer; wherein the tunnel barrier includes an oxide and has a first resistance-area (RA) product and the oxide layer has a second RA product that is lower than the first RA product. The MTJ may be included in a perpendicular spin torque transfer memory. The tunnel barrier and oxide layer form a memory having high stability with an RA product not substantively higher than a less table memory having a MTJ with only a single oxide layer. Other embodiments are described herein.

Abstract: Magnetic tunnel junctions (MTJ) suitable for spin transfer torque memory (STTM) devices, include perpendicular magnetic layers and one or more anisotropy enhancing layer(s) separated from a free magnetic layer by a crystallization barrier layer. In embodiments, an anisotropy enhancing layer improves perpendicular orientation of the free magnetic layer while the crystallization barrier improves tunnel magnetoresistance (TMR) ratio with better alignment of crystalline texture of the free magnetic layer with that of a tunneling layer.

Abstract: Among other disclosed subject matter, a computer-implemented method includes receiving illustrated content. The illustrated content includes half-tone content. The method includes blurring at least part of the illustrated content. The blurring is performed according to a blur radius. The method includes downscaling the blurred illustrated content to an output size.

Abstract: Embodiments of an apparatus and methods for improving multi-gate device performance are generally described herein. Other embodiments may be described and claimed.

Abstract: A method for evaluating an online entity presence includes receiving a set of social media information for at least one entity and calculating a social media measurement where the social media measurement is associated with the set of social media information. The method further includes receiving a set of online profile information for the at least one entity, the set of online profile information being associated with one or more non-social media online profiles, and calculating an online profile measurement wherein the online profile measurement is associated with the set of online profile information. The method further includes calculating a reach value, the reach value being associated with the social media measurement and the online profile measurement and providing a reach score to a user where the reach score associated with the reach value.

Abstract: Magnetic tunnel junctions (MTJ) suitable for spin transfer torque memory (STTM) devices, include perpendicular magnetic layers and one or more anisotropy enhancing layer(s) separated from a free magnetic layer by a crystallization barrier layer. In embodiments, an anisotropy enhancing layer improves perpendicular orientation of the free magnetic layer while the crystallization barrier improves tunnel magnetoresistance (TMR) ratio with better alignment of crystalline texture of the free magnetic layer with that of a tunneling layer.