Abstract: An image sensor package may include a semiconductor wafer having a pixel array, a color filter array (CFA) formed over the pixel array, and one or more lenses formed over the CFA. A light block layer may couple over the semiconductor wafer around a perimeter of the lenses and an encapsulation layer may be coupled around the perimeter of the lenses and over the light block layer. The light block layer may form an opening providing access to the lenses. A mold compound layer may be coupled over the encapsulation layer and the light block layer. A temporary protection layer may be used to protect the one or more lenses from contamination during application of the mold compound and/or during processes occurring outside of a cleanroom environment.

Abstract: An image sensor package may include a semiconductor wafer having a pixel array, a color filter array (CFA) formed over the pixel array, and one or more lenses formed over the CFA. A light block layer may couple over the semiconductor wafer around a perimeter of the lenses and an encapsulation layer may be coupled around the perimeter of the lenses and over the light block layer. The light block layer may form an opening providing access to the lenses. A mold compound layer may be coupled over the encapsulation layer and the light block layer. A temporary protection layer may be used to protect the one or more lenses from contamination during application of the mold compound and/or during processes occurring outside of a cleanroom environment.

Abstract: An image sensor package may include a semiconductor wafer having a pixel array, a color filter array (CFA) formed over the pixel array, and one or more lenses formed over the CFA. A light block layer may couple over the semiconductor wafer around a perimeter of the lenses and an encapsulation layer may be coupled around the perimeter of the lenses and over the light block layer. The light block layer may form an opening providing access to the lenses. A mold compound layer may be coupled over the encapsulation layer and the light block layer. A temporary protection layer may be used to protect the one or more lenses from contamination during application of the mold compound and/or during processes occurring outside of a cleanroom environment.

Abstract: An image sensor package may include a semiconductor wafer having a pixel array, a color filter array (CFA) formed over the pixel array, and one or more lenses formed over the CFA. A light block layer may couple over the semiconductor wafer around a perimeter of the lenses and an encapsulation layer may be coupled around the perimeter of the lenses and over the light block layer. The light block layer may form an opening providing access to the lenses. A mold compound layer may be coupled over the encapsulation layer and the light block layer. A temporary protection layer may be used to protect the one or more lenses from contamination during application of the mold compound and/or during processes occurring outside of a cleanroom environment.

Abstract: An image sensor package may include a semiconductor wafer having a pixel array, a color filter array (CFA) formed over the pixel array, and one or more lenses formed over the CFA. A light block layer may couple over the semiconductor wafer around a perimeter of the lenses and an encapsulation layer may be coupled around the perimeter of the lenses and over the light block layer. The light block layer may form an opening providing access to the lenses. A mold compound layer may be coupled over the encapsulation layer and the light block layer. A temporary protection layer may be used to protect the one or more lenses from contamination during application of the mold compound and/or during processes occurring outside of a cleanroom environment.

Abstract: An image sensor package may include a semiconductor wafer having a pixel array, a color filter array (CFA) formed over the pixel array, and one or more lenses formed over the CFA. A light block layer may couple over the semiconductor wafer around a perimeter of the lenses and an encapsulation layer may be coupled around the perimeter of the lenses and over the light block layer. The light block layer may form an opening providing access to the lenses. A mold compound layer may be coupled over the encapsulation layer and the light block layer. A temporary protection layer may be used to protect the one or more lenses from contamination during application of the mold compound and/or during processes occurring outside of a cleanroom environment.

Abstract: An image sensor package may include a semiconductor wafer having a pixel array, a color filter array (CFA) formed over the pixel array, and one or more lenses formed over the CFA. A light block layer may couple over the semiconductor wafer around a perimeter of the lenses and an encapsulation layer may be coupled around the perimeter of the lenses and over the light block layer. The light block layer may form an opening providing access to the lenses. A mold compound layer may be coupled over the encapsulation layer and the light block layer. A temporary protection layer may be used to protect the one or more lenses from contamination during application of the mold compound and/or during processes occurring outside of a cleanroom environment.

Abstract: An imager may include an array of pixels formed on a substrate. A chemisorption layer such as a planar chemisorption layer may be deposited over the array of pixels. The chemisorption layer may include active sites that bond with anchoring molecules. The anchoring molecules may be bonded to the planar chemisorption layer in only localized regions each covering a respective pixel of the array of pixels. The image sensor may include a photoresist layer that covers the chemisorption layer. Openings in the photoresist layer may define the boundaries of the localized regions. The anchoring molecules may be bonded only with the chemisorption layer without bonding to the photoresist layer. The anchoring molecules may serve to bond with analyte molecules. By forming the anchoring molecules within only localized regions centered over respective pixels, spatial resolution of the imager when imaging the analyte molecules may be improved.

Abstract: An image sensor integrated circuit may contain image sensor pixels. A channel for receiving a fluid with samples may be formed on top of the image sensor. The image sensor pixels may form light sensors and imagers. The imagers may gather images of the samples as the fluid passes over the imagers or when the samples from the fluid adhere to the surface above an imager array. A protective coating may be formed on surfaces of the channel to protect the image sensor pixels and integrated circuit from potentially damaging materials in the fluid, samples, or materials provided for evaluating the samples. The protective coating may be a base-resistant material such as a silylating agent. A cover glass may be attached above the image sensor integrated circuit to form a portion of the channel. The protective coating may be formed on surfaces of the cover glass.

Abstract: An imaging system may include an image sensor having an array of image pixels. Some image pixels in the array may be provided with spectral response adjustment structures. For example, a plurality of broadband pixels in the array may include spectral response adjustment structures. The spectral response adjustment structures may be configured to narrow the spectral response of the broadband pixels in high light conditions. For example, the spectral response of the broadband pixels may transition from clear to gray, from clear to green, or from yellow to green as the light level increases. The spectral response adjustment structures may, for example, be formed from photochromic materials or electrochromic elements. Processing circuitry in the imaging system may generate a color correction matrix for an image based at least partly on the state of the spectral response adjustment structures.

Abstract: An imaging system may include one or more optical filters that include metallic nanoparticles in a matrix. The metallic nanoparticle optical filters may form a color filter array for an imager in the imaging system. Different metallic nanoparticle optical filters may be formed for each desired color. Properties of the metallic nanoparticles and matrices may be varied to achieve the desired optical filtering properties and pass the desired wavelength bands to the imager. As examples, the type of metal, the size of the nanoparticles, the shape of the nanoparticles, and the type of matrix in which the nanoparticles are formed may all influence the optical properties of the resulting metallic nanoparticle optical film.

Abstract: An image sensor integrated circuit may contain image sensor pixels. A channel for receiving a fluid with particles such as fluorescent biological samples may be formed on top of the image sensor. Light-control layers may be interposed between the fluid channel and the top of the image sensor. The light-control layers may include a color filter array, a microlens array over the color filter array, and a plasmonic color filter. The plasmonic color filter may be formed from a patterned metal layer on the color filter array or on the microlens array. The patterned metal layer may include openings that are configured to use plasmonic effects to control the colors of light that pass through the plasmonic color filter. The color filter array and the plasmonic color filter, in combination, may block light from a light source in the system while passing fluorescent light from the sample.

Abstract: An electronic imager includes a pixel sensor array, a plurality elements of a color filter array containing pigments forming multiple color filter patterns on the pixel sensor array and a silylating agent formed between at least first and second elements of the multiple color filter patterns. A method for forming a color filter array on a pixel sensor array of an electronic imager includes forming a pixel sensor array on a substrate, forming a first color filter pattern on the pixel sensor array, depositing a silylating agent on the first color filter pattern, disposing elements of a second color filter pattern on the silylating agent between respective elements of the first color filter pattern and disposing elements of a third color filter pattern on the silylating agent between respective elements of the first color filter pattern.

Abstract: An imaging system may include one or more optical filters that include metallic nanoparticles in a matrix. The metallic nanoparticle optical filters may form a color filter array for an imager in the imaging system. Different metallic nanoparticle optical filters may be formed for each desired color. Properties of the metallic nanoparticles and matrices may be varied to achieve the desired optical filtering properties and pass the desired wavelength bands to the imager. As examples, the type of metal, the size of the nanoparticles, the shape of the nanoparticles, and the type of matrix in which the nanoparticles are formed may all influence the optical properties of the resulting metallic nanoparticle optical film.

Abstract: A method of forming (and apparatus for forming) a zirconium and/or hafnium-containing layer on a substrate, particularly a semiconductor substrate or substrate assembly, using a vapor deposition process and one or more silicon precursor compounds of the formula Si(OR)4 with one or more zirconium and/or hafnium precursor compounds of the formula M(NR?R?)4, wherein R, R?, and R? are each independently an organic group and M is zirconium or hafnium.

Abstract: Pixel arrays are provided for image sensors that have barriers between color filters in an array of color filters. Color filter barriers may be formed from a transparent or semi-transparent material. Color filter barriers may be formed from a low refractive index material. Color filters may be etched and color filter barrier material may be formed in the etched regions of the color filters. If desired, a layer of color filter barrier material may be etched to form open regions and color filter material may be formed in the open regions of the color filter barrier material. An image sensor may be a front-side illuminated image sensor or a back-side illuminated image sensor.

Abstract: An imaging system may include an image sensor having an array of image pixels. Some image pixels in the array may be provided with spectral response adjustment structures. For example, a plurality of broadband pixels in the array may include spectral response adjustment structures. The spectral response adjustment structures may be configured to narrow the spectral response of the broadband pixels in high light conditions. For example, the spectral response of the broadband pixels may transition from clear to gray, from clear to green, or from yellow to green as the light level increases. The spectral response adjustment structures may, for example, be formed from photochromic materials or electrochromic elements. Processing circuitry in the imaging system may generate a color correction matrix for an image based at least partly on the state of the spectral response adjustment structures.

Abstract: An image sensor may be provided with an array of imaging pixels. A color filter array may be formed over photosensitive elements in the pixel array. The color filter array may include color filter elements of different sizes. The color filter array may include color filter elements of at least three different sizes. The color filter array may include color filter elements of only two different sizes. Each color filter element by be square, octagonal, or rectangular. Microlenses of different sizes may also be formed on top of the color filter elements of different sizes. Forming color filter elements with different sizes may help skew the quantum efficiency for light at particular wavelengths of interest so that smaller pixel sizes can be used without suffering from diffraction limits.

Abstract: An imager may include an array of pixels formed on a substrate. A chemisorption layer such as a planar chemisorption layer may be deposited over the array of pixels. The chemisorption layer may include active sites that bond with anchoring molecules. The anchoring molecules may be bonded to the planar chemisorption layer in only localized regions each covering a respective pixel of the array of pixels. The image sensor may include a photoresist layer that covers the chemisorption layer. Openings in the photoresist layer may define the boundaries of the localized regions. The anchoring molecules may be bonded only with the chemisorption layer without bonding to the photoresist layer. The anchoring molecules may serve to bond with analyte molecules. By forming the anchoring molecules within only localized regions centered over respective pixels, spatial resolution of the imager when imaging the analyte molecules may be improved.

Abstract: An imaging system may include a camera module with an image sensor having an array of image sensor pixels. The image sensor may include a substrate having an array of photodiodes, an array of microlenses formed over the array of photodiodes, an array of color filter elements interposed between the array of microlenses and the array of photodiodes, and a barrier layer interposed between the array of color filter elements and the array of photodiodes. The barrier layer may be formed from a material with a high dielectric constant. The material used to form the barrier layer may have a dielectric constant above the dielectric constant of silicon dioxide. The barrier layer may replace an antireflective coating over the array of photodiodes and may be used in connection with a silicon dioxide passivation layer interposed between the array of photodiodes and the barrier layer.