Abstract: A method of forming (and an apparatus for forming) a metal-doped aluminum oxide layer on a substrate, particularly a semiconductor substrate or substrate assembly, using a vapor deposition process.

Abstract: A method of forming (and system for forming) layers, such as calcium, barium, strontium, and/or magnesium, tantalates and/or niobates, and optionally titanates, on a substrate by employing a vapor deposition method, particularly a multi-cycle atomic layer deposition process.

Abstract: An image sensor integrated circuit may contain image sensor pixels. A channel for receiving a fluid with samples may be formed on top of the image sensor. The image sensor pixels may form light sensors and imagers. The imagers may gather images of the samples as the fluid passes over the imagers or when the samples from the fluid adhere to the surface above an imager array. A protective coating may be formed on surfaces of the channel to protect the image sensor pixels and integrated circuit from potentially damaging materials in the fluid, samples, or materials provided for evaluating the samples. The protective coating may be a base-resistant material such as a silylating agent. A cover glass may be attached above the image sensor integrated circuit to form a portion of the channel. The protective coating may be formed on surfaces of the cover glass.

Abstract: An image sensor integrated circuit may contain image sensor pixels. A channel for receiving a fluid with particles such as fluorescent biological samples may be formed on top of the image sensor. Light-control layers may be interposed between the fluid channel and the top of the image sensor. The light-control layers may include a color filter array, a microlens array over the color filter array, and a plasmonic color filter. The plasmonic color filter may be formed from a patterned metal layer on the color filter array or on the microlens array. The patterned metal layer may include openings that are configured to use plasmonic effects to control the colors of light that pass through the plasmonic color filter. The color filter array and the plasmonic color filter, in combination, may block light from a light source in the system while passing fluorescent light from the sample.

Abstract: An image sensor may be provided with an array of imaging pixels. A color filter array may be formed over photosensitive elements in the pixel array. The color filter array may include a Bayer color filter array. Separating material may be interposed between color filter elements of adjacent imaging pixels. The separating material may be relatively low index of refraction material configured to reduce or eliminate optical crosstalk between adjacent imaging pixels. The separating material may be air so that neighboring color filter elements are separated by an air gap. The air gaps may be formed during the color filter array fabrication process by depositing a sacrificial layer on the substrate, forming openings in the sacrificial layer, forming color filter elements in the openings, and removing remaining portions of the sacrificial layer that are formed between the color filter elements.

Abstract: A method for use in the fabrication of integrated circuits includes providing a substrate assembly having a surface. A diffusion barrier layer is formed over at least a portion of the surface. The diffusion barrier layer is formed of RuSix, where x is in the range of about 0.01 to about 10. The barrier layer may be formed by depositing RuSix by chemical vapor deposition or the barrier layer may be formed by forming a layer of ruthenium relative to a silicon containing region and performing an anneal to form RuSix from the layer of ruthenium and the silicon containing region. Capacitor electrodes, interconnects or other structures may be formed with such a diffusion barrier layer.

Abstract: A method of forming (and apparatus for forming) a metal oxide layer, preferably a dielectric layer, on a substrate, particularly a semiconductor substrate or substrate assembly, using a vapor deposition process and ozone with one or more metal organo-amine precursor compounds.

Abstract: A preferred embodiment of the invention is directed to support structures such as spacers used to provide a uniform distance between two layers of a device. In accordance with a preferred embodiment, the spacers may be formed utilizing flow-fill deposition of a wet film in the form of a precursor such as silicon dioxide. Formation of spacers in this manner provides a homogenous amorphous support structure that may be used to provide necessary spacing between layers of a device such as a flat panel display.

Abstract: Pixel arrays are provided for image sensors that have barriers between color filters in an array of color filters. Color filter barriers may be formed from a transparent or semi-transparent material. Color filter barriers may be formed from a low refractive index material. Color filters may be etched and color filter barrier material may be formed in the etched regions of the color filters. If desired, a layer of color filter barrier material may be etched to form open regions and color filter material may be formed in the open regions of the color filter barrier material. An image sensor may be a front-side illuminated image sensor or a back-side illuminated image sensor.

Abstract: An electronic imager includes a pixel sensor array, a plurality elements of a color filter array containing pigments forming multiple color filter patterns on the pixel sensor array and a silylating agent formed between at least first and second elements of the multiple color filter patterns. A method for forming a color filter array on a pixel sensor array of an electronic imager includes forming a pixel sensor array on a substrate, forming a first color filter pattern on the pixel sensor array, depositing a silylating agent on the first color filter pattern, disposing elements of a second color filter pattern on the silylating agent between respective elements of the first color filter pattern and disposing elements of a third color filter pattern on the silylating agent between respective elements of the first color filter pattern.

Abstract: A ?-diketonate alkoxide metal compound and a source reagent composition are provided. The ?-diketonate alkoxide metal compound may include a metal M selected from Mg, Ca, Sr, Ba, Sc, Y, La, Ce, Ti, Zr, Hf, Pr, V, Nb, Ta, Nd, Cr, W, Pm, Mn, Re, Sm, Fe, Ru, Eu, Co, Rh, Ir, Gd, Ni, Tb, Cu, Dy, Ho, Al, Tl, Er, Sn, Pb, Tm, Bi, Lu, Th, Pd, Pt, Ga, In, Au, Ag, Li, Na, K, Rb, Cs, Mo, and Yb. The metal may be complexed to at least one alkoxide ligand and one ?-diketonate ligand.

Abstract: A preferred embodiment of the invention is directed to support structures such as spacers used to provide a uniform distance between two layers of a device. In accordance with a preferred embodiment, the spacers may be formed utilizing flow-fill deposition of a wet film in the form of a precursor such as silicon dioxide. Formation of spacers in this manner provides a homogenous amorphous support structure that may be used to provide necessary spacing between layers of a device such as a flat panel display.

Abstract: An imaging system may include an image sensor configured to image materials at near field imaging ranges from the image sensor. Near field imaging ranges may be on the scale of 1-10 pixel sizes from the image sensor. The materials being imaged may be fluorescent materials that emit radiation at fluorescent wavelengths when the materials are exposed to radiation at excitation wavelengths. The image sensor may include color filter materials that block radiation at excitation wavelengths while transmitting radiation at fluorescent wavelengths. The image sensor may include light guides that reduce cross-talk between pixels and improve localization of emitted radiation, thereby allowing the image sensor to determine which pixel(s) is (are) located beneath the materials being imaged. The light guides may include may include sloped sidewalls and may include reflective sidewalls, which may improve radiation collection (e.g., efficiency) and localization of emitted radiation.

Abstract: A method of forming (and apparatus for forming) a metal oxide layer, preferably a dielectric layer, on a substrate, particularly a semiconductor substrate or substrate assembly, using a vapor deposition process and ozone with one or more metal organo-amine precursor compounds.

Abstract: A method of forming (and apparatus for forming) a metal oxide layer, preferably a dielectric layer, on a substrate, particularly a semiconductor substrate or substrate assembly, using a vapor deposition process and ozone with one or more metal organo-amine precursor compounds.

Abstract: A method of forming (and apparatus for forming) a metal oxide layer, preferably a dielectric layer, on a substrate, particularly a semiconductor substrate or substrate assembly, using a vapor deposition process and ozone with one or more metal organo-amine precursor compounds.

Abstract: A method of forming (and an apparatus for forming) a metal oxide layer on a substrate, particularly a semiconductor substrate or substrate assembly, using a vapor deposition process and one or more precursor compounds that include diketonate ligands and/or ketoimine ligands.

Abstract: A method of forming (and an apparatus for forming) a metal-doped aluminum oxide layer on a substrate, particularly a semiconductor substrate or substrate assembly, using a vapor deposition process.

Abstract: A method of forming (and apparatus for forming) tantalum silicide layers (including tantalum silicon nitride layers), which are typically useful as diffusion barrier layers, on a substrate by using a vapor deposition process with a tantalum halide precursor compound, a silicon precursor compound, and an optional nitrogen precursor compound.

Abstract: A method of forming (and an apparatus for forming) a metal-doped aluminum oxide layer on a substrate, particularly a semiconductor substrate or substrate assembly, using a vapor deposition process.