Abstract: A semiconductor device and process for making the same are disclosed which use porous dielectric materials to reduce capacitance between conductors, while allowing conventional photolithography and metal techniques and materials to be used in fabrication. In one structure, patterned conductors 18 are provided on an interlayer dielectric 10, with a substrate encapsulation layer 31 deposited conformally over this structure. A layer of porous dielectric material 22 (e.g. dried SiO.sub.2 gel) is then deposited to substantially fill the gaps between and also cover the conductors. A substantially solid cap layer 14 of a material such as SiO.sub.2 is then deposited, followed by a photolithography step to define via locations. Vias are etched through the cap layer, and then through the porous dielectric.

Abstract: An anode plate 50 for use in a field emission flat panel display device comprises a transparent planar substrate 58 having a plurality of electrically conductive, parallel stripes 52 comprising the anode electrode of the device, which are covered by phosphors 54.sub.R, 54.sub.G and 54.sub.B. A substantially opaque, electrically insulating material 56 is affixed to substrate 58 in the spaces between conductors 52, acting as a barrier to the passage of ambient light into and out of the device. The electrical insulating quality of opaque material 56 increases the electrical isolation of conductive stripes 52 from one another, reducing the risk of breakdown due to increased leakage current. Opaque material 56 preferably comprises glass having impurities dispersed therein, wherein the impurities may include one or more organic dyes, selected to provide relatively uniform opacity over the visible range of the electromagnetic spectrum.

Abstract: A preferred embodiment of this invention comprises a thin unreactive film (e.g. ruthenium dioxide 36) contacting a high-dielectric-constant material (e.g. barium strontium titanate 38) to an electrode. The thin unreactive film provides a stable conductive interface between the high-dielectric-constant material layer and the electrode base (e.g palladium 34). As opposed to a standard thin-film layer, the thin unreactive film is generally less than 50 nm thick, preferably less than 35 nm thick, more preferably between 5 nm and 25 nm thick, and most preferably between 10 nm and 20 nm thick. A thin unreactive film can benefit from the advantages of the materials used while avoiding or minimizing many of their disadvantages. A thin unreactive film would generally be substantially less expensive than a standard thin-film layer since much less material can be used while not significantly affecting the surface area of the electrode in contact with the HDC material.

Abstract: An anode plate (10) for use in a field emission flat panel display device (8) includes a transparent substrate (26) having a plurality of spaced-apart, electrically conductive regions (28) are covered by a luminescent material (24) and from the anode electrode. A getter material (29) of porous silicon is deposited on the substrate (26) between the conductive regions (28) of the anode plate (10). The getter material (29) of porous silicon is preferably electrically nonconductive, opaque, and highly porous. Included are methods of fabricating the getter material (29) on the anode plate (10).

Abstract: A method of fabricating an anode plate 18 for use in a field emission device comprises the steps of providing a transparent substrate 20 and depositing a layer of a transparent, electrically conductive material 24 on a surface of the substrate. Next, portions of the layer of conductive material 24 are removed to form regions of the conductive material. Luminescent material 26 is then applied on the conductive regions and an outer portion 27 of at least some of the particles of the luminescent material are thereafter removed.

Abstract: A computer image display device includes a light transparent glass anode plate (10) spaced from a cathode substrate (12) which has a plurality of microtips (14). Plate (10) has an inside surface (25) which is contoured with an array of prisms (36) having equal sides (58, 59) that converge rearwardly toward apexes (38) of peaks (36). Apexes (38) are covered with light absorbing material (47), then covered at anode comb forming regions (51, 52, 53) with conductive material (48). Different color luminescing phosphors (24a, 24b, 24c) are applied over the respective anode combs (51, 52, 53). Sides (58, 59) direct ambient light toward apexes (38) for absorption by material (47). Light emitted by phosphors (24a, 24b, 24c) is directed by valleys (60) toward outside surface (35) of plate (10).

Abstract: An mode plate 80 for use in a field emission flat panel display device comprises a transparent planar substrate 88 having a plurality of electrically conductive, parallel stripes 50 comprising the anode electrode of the device, which are covered by phosphors 84.sub.R, 84.sub.G and 84.sub.B. The conductors 50 which are covered by the same color phosphors are electrically interconnected by buses 52, 54, and 56. A substantially opaque, electrically insulating material 86 is affixed to substrate 88 in the spaces between conductors 50, acting as a barrier to the passage of ambient light into and out of the device. In addition, the same substantially opaque, electrically insulating material 86 is formed between the conductors 50 and the buses 52, 54, and 56, thereby providing electrical isolation between the two layers.

Abstract: An anode plate 40, suitable for use in a field emission display tetrode, includes a transparent planar substrate 42 having thereon a layer 46 of a transparent, electrically conductive material, which comprises the anode electrode of the display tetrode. Barrier structures 48 comprising an electrically insulating, preferably opaque material, are formed on anode electrode 46 as a series of parallel ridges. Atop each barrier structure 48 are a series of electrically conductive stripes 50, which function as deflection electrodes. Luminescent material 52 overlies anode electrode 46 in the channels between barrier structures 48. Conductive stripes 50 are formed into three series such that every third stripe 50 is electrically interconnected. Deflection voltage controller 70 permits selective deflection of electrons toward the proper luminescent material 52.

Abstract: A preferred embodiment of this invention comprises a thin unreactive film (e.g. platinum 36) contacting a high-dielectric-constant material (e.g. barium strontium titanate 38) to an electrode. The thin unreactive film provides a stable conductive interface between the high-dielectric-constant material layer and the electrode base (e.g palladium 34). As opposed to a standard thin-film layer, the thin unreactive film is generally less than 50 nm thick, preferably less than 35 nm thick, more preferably between 5 nm and 25 nm thick, and most preferably between 10 nm and 20 nm thick. A thin unreactive fire can benefit from the advantages of the materials used while avoiding or minimizing many of their disadvantages. A thin unreactive film would generally be substantially less expensive than a standard thin-film layer since much less material can be used while not significantly affecting the surface area of the electrode in contact with the HDC material.

Abstract: A method of fabricating an anode plate 80 for use in a field emission device. The method comprises the steps of providing a substantially transparent substrate 88 having spaced-apart, electrically conductive regions 50 on a surface thereof, then coating the anode plate with a substantially opaque material 86. The opaque material 86 is removed from the surface of the conductive regions 50 in the active area 58, and from selected areas 60 of the interconnect portion of the conductive regions 50. A first bus 52 is provided for electrically connecting a first series 50.sub.R of the conductive regions 50, a second bus 54 is provided for electrically connecting a second series 50.sub.G of the conductive regions 50, and a third bus 56 is provided for electrically connecting a third series 50.sub.B of the conductive regions 50. Luminescent material of a first color 84.sub.R is applied to the first series of conductive regions 50.sub.R, luminescent material of a second color 84.sub.

Abstract: A preferred embodiment of this invention comprises a thin unreactive film (e.g. platinum 36) contacting a high-dielectric-constant material (e.g. barium strontium titanate 38) to an electrode. The thin unreactive film provides a stable conductive interface between the high-dielectric-constant material layer and the electrode base (e.g. palladium 34). As opposed to a standard thin-film layer, the thin unreactive film is generally less than 50 nm thick, preferably less than 35 nm thick, more preferably between 5 nm and 25 nm thick, and most preferably between 10 nm and 20 nm thick. A thin unreactive film can benefit from the advantages of the materials used while avoiding or minimizing many of their disadvantages. A thin unreactive film would generally be substantially less expensive than a standard thin-film layer since much less material can be used while not significantly affecting the surface area of the electrode in contact with the HDC material.

Abstract: A preferred embodiment of this invention comprises a thin unreactive film (e.g. platinum 36) contacting a high-dielectric-constant material (e.g. barium strontium titanate 38) to an electrode. The thin unreactive film provides a stable conductive interface between the high-dielectric-constant material layer and the electrode base (e.g palladium 34). As opposed to a standard thin-film layer, the thin unreactive film is generally less than 50 nm thick, preferably less than 35 nm thick, more preferably between 5 nm and 25 nm thick, and most preferably between 10 nm and 20 nm thick. A thin unreactive film can benefit from the advantages of the materials used while avoiding or minimizing many of their disadvantages. A thin unreactive film would generally be substantially less expensive than a standard thin-film layer since much less material can be used while not significantly affecting the surface area of the electrode in contact with the HDC material.

Abstract: This invention provides a process for making a semiconductor device with reduced capacitance between adjacent conductors. This process can include applying and gelling one or more solutions between and over conductors 24 and drying the wet gel to create at least porous dielectric sublayers 28 and 29. By varying the composition of the solutions, gelling conditions, drying temperature, composition of the solvents in the wet gel, or a combination of these approaches, the porosity of the sublayers may be tailored individually. A non-porous dielectric layer 30 may be formed over porous layer 28, which may complete an interlayer dielectric. A novel process for creating the porous dielectric layer is disclosed, which can be completed at vacuum or ambient pressures, yet results in porosity, pore size, and shrinkage of the dielectric during drying comparable to that previously attainable only by drying gels at supercritical pressure.

Abstract: The emitter plate 60 of a field emission flat panel display device includes a layer 68 of a resistive material and a mesh-like structure 62 of an electrically conductive material. A conductive plate 78 is also formed on top of resistive coating 68 within the spacing defined by the meshes of conductor 62. Microtip emitters 70, illustratively in the shape of cones, are formed on the upper surface of conductive plate 78. With this configuration, all of the microtip emitters 70 will be at an equal potential by virtue of their electrical connection to conductive plate 78. In one embodiment, a single conductive plate 82 is positioned within each mesh spacing of conductor 80; in another embodiment, four conductive plates 92 are symmetrically positioned within each mesh spacing of conductor 90.

Abstract: The emitter plate 60 of a field emission flat panel display device includes a layer 68 of a resistive material and a mesh-like structure 62 of an electrically conductive material. A conductive plate 78 is also formed on top of resistive coating 68 within the spacing defined by the meshes of conductor 62. Microtip emitters 70, illustratively in the shape of cones, are formed on the upper surface of conductive plate 78. With this configuration, all of the microtip emitters 70 will be at an equal potential by virtue of their electrical connection to conductive plate 78. In one embodiment, a single conductive plate 82 is positioned within each mesh spacing of conductor 80; in another embodiment, four conductive plates 92 are symmetrically positioned within each mesh spacing of conductor 90.

Abstract: The emitter plate 60 of a field emission flat panel display device includes a layer 68 of a resistive material and a mesh-like structure 62 of an electrically conductive material. A conductive plate 78 is also formed on top of resistive coating 68 within the spacing defined by the meshes of conductor 62. Microtip emitters 70; illustratively in the shape of cones, are formed on the upper surface of conductive plate 78. With this configuration, all of the microtip emitters 70 will be at an equal potential by virtue of their electrical connection to conductive plate 78. In one embodiment, a single conductive plate 82 is positioned within each mesh spacing of conductor 80; in another embodiment, four conductive plates 92 are symmetrically positioned within each mesh spacing of conductor 90.

Abstract: An anode plate 50 for use in a field emission flat panel display device comprises a transparent planar substrate 58 having a plurality of electrically conductive, parallel stripes 52 comprising the anode electrode of the device, which are covered by phosphors 54.sub.R, 54.sub.G and 54.sub.B. A substantially opaque, electrically insulating material 56 is affixed to substrate 58 in the spaces between conductors 52, acting as a barrier to the passage of ambient light into and out of the device. The electrical insulating quality of opaque material 56 increases the electrical isolation of conductive stripes 52 from one another, reducing the risk of breakdown due to increased leakage current. Opaque material 56 preferably comprises glass having impurities dispersed therein, wherein the impurities may include one or more organic dyes, selected to provide relatively uniform opacity over the visible range of the electromagnetic spectrum.

Abstract: This invention provides an improved porous structure for semiconductor devices and a process for making the same. This process may be applied to an existing porous structure 28, which may be deposited, for sample, between patterned conductors 24. The process may include baking the structure in a reducing atmosphere, preferably a forming gas, to dehydroxylate the pore surfaces. The process may include baking the structure in a halogen-containing atmosphere to bond halogens to the pore surfaces. It has been found that a porous structure treated in such a manner generally exhibits improved dielectric properties relative to an untreated sample.

Abstract: A method of forming of a monomolecular coating (19) for surfaces of contacting elements (11, 17) of micro-mechanical devices (10), specifically, devices that have moving elements that contact other elements and that tend to stick as a result of the contact. The method uses liquid deposition, with the device being placed in a solution that contains a precursor to the formation of the coating. The precursor is chosen based on coordination chemistry between the precursor and the surface to be coated.

Abstract: An anode plate 40 for use in a field emission flat panel display device comprises a transparent planar substrate 42 having a plurality of electrically conductive, parallel stripes 46 comprising the anode electrode of the device, which are covered by phosphors 48.sub.R, 48.sub.G and 48.sub.B, and a gettering material 52 in the interstices of the stripes 46. The gettering material 52 is preferably selected from among zirconium-vanadium-iron and barium. The getter 52 may be thermally reactivated by passing a current through it at selected times, or by electron bombardment from microtips on the emitter substrate. The getter 52 may be formed on a substantially opaque, electrically insulating material 50 affixed to substrate 42 in the spaces formed between conductors 46, which acts as a barrier to the passage of ambient light into and out of the device. Methods of fabricating the getter stripes 52 on the anode plate 40 are disclosed.